公开(公告)号：US20240249936A1

公开(公告)日：2024-07-25

申请号：US18158916

申请日：2023-01-24

Applicant: Applied Materials, Inc.

Inventor： Mang-Mang LING ,  Jong Mun KIM ,  Srinivas D. NEMANI ,  Ellie Y. YIEH

IPC: H01L21/02 ,  H01L21/033 ,  H01L21/3213 ,  H01L21/768

CPC classification number: H01L21/02244 ,  H01L21/02238 ,  H01L21/0332 ,  H01L21/0337 ,  H01L21/32137 ,  H01L21/32139 ,  H01L21/76816

Abstract: Embodiments of the present disclosure relate to methods for patterning a material layer on a substrate. The method includes forming a hard mask layer on a material layer disposed on a substrate. The material layer includes a plurality of first layers and a plurality of second layers alternately formed over the substrate. The method further includes performing a first etch process to form features in the material layer through the hard mask layer by supplying a first etching gas; performing an oxidation process to oxidize a sidewall of the features by supplying an oxidation gas; and performing a second etch process to etch the sidewall of the features formed in the material layer by suppling a second etching gas.

公开(公告)号：US20220413387A1

公开(公告)日：2022-12-29

申请号：US17898216

申请日：2022-08-29

Applicant: Applied Materials, Inc.

Inventor： Huixiong DAI ,  Mangesh Ashok BANGAR ,  Srinivas D. NEMANI ,  Christopher S. NGAI ,  Ellie Y. YIEH

IPC: G03F7/20 ,  H01L21/027 ,  G03F7/30 ,  G03F7/38 ,  G03F7/16

Abstract: A method for enhancing the depth of focus process window during a lithography process includes applying a photoresist layer comprising a photoacid generator on a material layer disposed on a substrate, exposing a first portion of the photoresist layer unprotected by a photomask to light radiation in a lithographic exposure process, providing a thermal energy to the photoresist layer in a post-exposure baking process, applying an electric field or a magnetic field while performing the post-exposure baking process, and dynamically changing a frequency of the electric field as generated while providing the thermal energy to the photoresist layer.

公开(公告)号：US20220390847A1

公开(公告)日：2022-12-08

申请号：US17342176

申请日：2021-06-08

Applicant: Applied Materials, Inc.

Inventor： Huixiong DAI ,  Mangesh Ashok BANGAR ,  Srinivas D. NEMANI ,  Steven Hiloong WELCH ,  Ellie Y. YIEH ,  Dmitry LUBOMIRSKY

IPC: G03F7/11 ,  G03F7/16 ,  G03F7/004 ,  G03F7/38 ,  G03F7/40 ,  G03F7/038 ,  G03F7/32 ,  C23C16/06

Abstract: A method for processing a substrate is described. The method includes forming a metal containing resist layer onto a substrate, patterning the metal containing resist layer, and performing a post exposure bake on the metal containing resist layer. The post exposure bake on the metal containing resist layer is a field guided post exposure bake operation and includes the use of an electric field to guide the ions or charged species within the metal containing resist layer. The field guided post exposure bake operation may be paired with a post development field guided bake operation.

公开(公告)号：US20220269180A1

公开(公告)日：2022-08-25

申请号：US17668080

申请日：2022-02-09

Applicant: Applied Materials, Inc.

Inventor： Douglas A. BUCHBERGER, JR. ,  Dmitry LUBOMIRSKY ,  John O. DUKOVIC ,  Srinivas D. NEMANI

IPC: G03F7/38

Abstract: A method and apparatus for applying an electric field and/or a magnetic field to a photoresist layer without air gap intervention during photolithography processes is provided herein. The method and apparatus include a transfer device and a plurality of modules. The transfer device is configured to rotate a plurality of substrates between each of the modules, wherein one module includes a heating pedestal and another module includes a cooling pedestal. One module is utilized for inserting and removing the substrates from the system. At least the heating module is able to be sealed and filled with a process volume before applying the electric field.

公开(公告)号：US20210143323A1

公开(公告)日：2021-05-13

申请号：US16681351

申请日：2019-11-12

Applicant: Applied Materials, Inc.

Inventor： Jong Mun KIM ,  Minrui YU ,  Chando PARK ,  Mang-Mang LING ,  Jaesoo AHN ,  Chentsau Chris YING ,  Srinivas D. NEMANI ,  Mahendra PAKALA ,  Ellie Y. YIEH

IPC: H01L43/12 ,  H01L27/22 ,  H01L43/02 ,  H01L43/10

Abstract: Embodiments of the disclosure provide methods and apparatus for fabricating magnetic tunnel junction (MTJ) structures on a substrate for MRAM applications. In one embodiment, a method for forming a magnetic tunnel junction (MTJ) device structure includes performing a patterning process by an ion beam etching process in a processing chamber to pattern a film stack disposed on a substrate, wherein the film stack comprises a reference layer, a tunneling barrier layer and a free layer disposed on the tunneling barrier, and determining an end point for the patterning process.

公开(公告)号：US20200035509A1

公开(公告)日：2020-01-30

申请号：US16510847

申请日：2019-07-12

Applicant: Applied Materials, Inc.

Inventor： Adib M. KHAN ,  Qiwei LIANG ,  Sultan MALIK ,  Srinivas D. NEMANI

IPC: H01L21/447 ,  H01L21/67 ,  C23C16/452

Abstract: The present disclosure relates to high pressure processing apparatus for semiconductor processing. The apparatus described herein include a high pressure process chamber and a containment chamber surrounding the process chamber. A high pressure fluid delivery module is in fluid communication with the high pressure process chamber and is configured to deliver a high pressure fluid to the process chamber.

公开(公告)号：US20190355579A1

公开(公告)日：2019-11-21

申请号：US16035983

申请日：2018-07-16

Applicant: Applied Materials, Inc.

Inventor： Maximillian CLEMONS ,  Michel Ranjit FREI ,  Mahendra PAKALA ,  Mehul B. NAIK ,  Srinivas D. NEMANI ,  Ellie Y. YIEH

IPC: H01L21/02

Abstract: Embodiments of the present disclosure generally relate to a film treatment process. In one embodiment, a transition metal oxide layer including a dopant is deposited on a substrate. After the doped transition metal oxide layer is deposited, a high pressure annealing process is performed on the doped transition metal oxide layer to densify the doped transition metal oxide without outgassing of the dopant. The high pressure annealing process is performed in an ambient environment including the dopant and at a pressure greater than 1 bar.

公开(公告)号：US20190051557A1

公开(公告)日：2019-02-14

申请号：US16102543

申请日：2018-08-13

Applicant: Applied Materials, Inc.

Inventor： Bencherki MEBARKI ,  Sean S. KANG ,  Keith Tatseun WONG ,  He REN ,  Mehul B. NAIK ,  Ellie Y. YIEH ,  Srinivas D. NEMANI

IPC: H01L21/768 ,  H01L23/532

Abstract: Aspects of the disclosure include methods of treating a substrate to remove one or more of voids, seams, and grain boundaries from interconnects formed on the substrate. The method includes heating the substrate in an environment pressurized at supra-atmospheric pressure. In one example, the substrate may be heated in a hydrogen-containing atmosphere.

公开(公告)号：US20190018322A1

公开(公告)日：2019-01-17

申请号：US16138142

申请日：2018-09-21

Applicant: Applied Materials, Inc.

Inventor： Kartik RAMASWAMY ,  Srinivas D. NEMANI

IPC: G03F7/20 ,  G03F7/26

Abstract: A method and apparatus disclosed herein apply to processing a substrate, and more specifically to a method and apparatus for improving photolithography processes. The apparatus includes a chamber body, a substrate support disposed within the chamber body, and an electrode assembly. The substrate support has a top plate disposed above the substrate support, a bottom plate disposed below the substrate support, and a plurality of electrodes connecting the top plate to the bottom plate. A voltage is applied to the plurality of electrodes to generate an electric field. Methods for exposing a photoresist layer on a substrate to an electric field are also disclosed herein.

公开(公告)号：US20180261480A1

公开(公告)日：2018-09-13

申请号：US15917365

申请日：2018-03-09

Applicant: Applied Materials, Inc.

Inventor： Qiwei LIANG ,  Srinivas D. NEMANI ,  Adib KHAN ,  Venkata Ravishankar KASIBHOTLA ,  Sultan MALIK ,  Sean S. KANG ,  Keith Tatseun WONG

IPC: H01L21/67

CPC classification number: H01L21/67196 ,  C23C16/52 ,  H01L21/324 ,  H01L21/67017 ,  H01L21/67098 ,  H01L21/67103 ,  H01L21/67126 ,  H01L21/67167 ,  H01L21/6719 ,  H01L21/67201 ,  H01L21/68742 ,  H01L21/76841

Abstract: A high-pressure processing system for processing a substrate includes a first chamber, a pedestal positioned within the first chamber to support the substrate, a second chamber adjacent the first chamber, a vacuum processing system configured to lower a pressure within the second chamber to near vacuum, a valve assembly between the first chamber and the second chamber to isolate the pressure within the first chamber from the pressure within the second chamber, and a gas delivery system configured to introduce a processing gas into the first chamber and to increase the pressure within the first chamber to at least 10 atmospheres while the processing gas is in the first chamber and while the first chamber is isolated from the second chamber.