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公开(公告)号:US20210225687A1
公开(公告)日:2021-07-22
申请号:US16744478
申请日:2020-01-16
Applicant: Applied Materials, Inc.
Inventor: Sultan MALIK , Srinivas D. NEMANI , Adib M. KHAN , Qiwei LIANG
IPC: H01L21/687 , H01L21/677
Abstract: The present disclosure generally relates to a pin-less substrate transfer apparatus and method for a processing chamber. The processing chamber includes a pedestal. The pedestal includes a pedestal plate. The pedestal plate has a radius, a top surface, and a bottom surface. The pedestal plate further includes a plurality of cut outs on a perimeter of the pedestal plate. Flat edges are disposed on opposite sides of the pedestal plate. Recesses are disposed in the bottom surface below each of the flat edges.
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公开(公告)号:US20200035509A1
公开(公告)日:2020-01-30
申请号:US16510847
申请日:2019-07-12
Applicant: Applied Materials, Inc.
Inventor: Adib M. KHAN , Qiwei LIANG , Sultan MALIK , Srinivas D. NEMANI
IPC: H01L21/447 , H01L21/67 , C23C16/452
Abstract: The present disclosure relates to high pressure processing apparatus for semiconductor processing. The apparatus described herein include a high pressure process chamber and a containment chamber surrounding the process chamber. A high pressure fluid delivery module is in fluid communication with the high pressure process chamber and is configured to deliver a high pressure fluid to the process chamber.
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公开(公告)号:US20200343103A1
公开(公告)日:2020-10-29
申请号:US16926422
申请日:2020-07-10
Applicant: Applied Materials, Inc.
Inventor: Adib M. KHAN , Qiwei LIANG , Sultan MALIK , Srinivas D. NEMANI
IPC: H01L21/447 , C23C16/452 , H01L21/67
Abstract: The present disclosure relates to high pressure processing apparatus for semiconductor processing. The apparatus described herein include a high pressure process chamber and a containment chamber surrounding the process chamber. A high pressure fluid delivery module is in fluid communication with the high pressure process chamber and is configured to deliver a high pressure fluid to the process chamber.
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公开(公告)号:US20200185260A1
公开(公告)日:2020-06-11
申请号:US16706115
申请日:2019-12-06
Applicant: Applied Materials, Inc.
Inventor: Sultan MALIK , Srinivas D. NEMANI , Qiwei LIANG , Adib M. KHAN
IPC: H01L21/687 , H01L21/673
Abstract: Embodiments of the disclosure relate to an apparatus and method for processing semiconductor substrates. In one embodiment, a processing system is disclosed. The processing system includes an outer chamber that surrounds an inner chamber. The inner chamber includes a substrate support upon which a substrate is positioned during processing. The inner chamber is configured to have an internal volume that, when isolated from an internal volume of the outer chamber, is changeable such that the pressure within the internal volume of the inner chamber may be varied.
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公开(公告)号:US20200149166A1
公开(公告)日:2020-05-14
申请号:US16745141
申请日:2020-01-16
Applicant: Applied Materials, Inc.
Inventor: Kien N. CHUC , Qiwei LIANG , Hanh D. NGUYEN , Xinglong CHEN , Matthew MILLER , Soonam PARK , Toan Q. TRAN , Adib M. KHAN , Jang-Gyoo YANG , Dmitry LUBOMIRSKY , Shankar VENKATARAMAN
IPC: C23C16/455 , H01J37/32 , C23C16/452
Abstract: Apparatus and methods for gas distribution assemblies are provided. In one aspect, a gas distribution assembly is provided comprising an annular body comprising an annular ring having an inner annular wall, an outer wall, an upper surface, and a bottom surface, an upper recess formed into the upper surface, and a seat formed into the inner annular wall, an upper plate positioned in the upper recess, comprising a disk-shaped body having a plurality of first apertures formed therethrough, and a bottom plate positioned on the seat, comprising a disk-shaped body having a plurality of second apertures formed therethrough which align with the first apertures, and a plurality of third apertures formed between the second apertures and through the bottom plate, the bottom plate sealingly coupled to the upper plate to fluidly isolate the plurality of first and second apertures from the plurality of third apertures.
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