RF TAILORED VOLTAGE ON BIAS OPERATION
    1.
    发明申请

    公开(公告)号:US20190311884A1

    公开(公告)日:2019-10-10

    申请号:US16374835

    申请日:2019-04-04

    Abstract: A method, system, and apparatus for reducing particle generation on a showerhead during an ion bombarding process in a process chamber are provided. First and second RF signals are supplied from an RF generator to an electrode embedded in a substrate support in the process chamber. The second RF signal is adjusted relative to the first RF signal in response to a measurement of a first RF amplitude, a second RF amplitude, a first RF phase, and a second RF phase. Ion bombardment on a substrate is maximized and the quantity of particles generated on the showerhead is minimized. Methods and systems described herein provide for improved ion etching characteristics while reducing the amount of debris particles generated from the showerhead.

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