公开(公告)号：US20250051965A1

公开(公告)日：2025-02-13

申请号：US18232668

申请日：2023-08-10

Applicant: Applied Materials, Inc.

Inventor： Gautam PISHARODY ,  Parth SWAROOP ,  Xiaoxiong YUAN ,  Paneendra Prakash BHAT ,  Qiwei LIANG ,  Dmitry LUBOMIRSKY ,  Adib KHAN ,  Douglas A. BUCHBERGER, Jr.

IPC: C30B35/00 ,  C30B25/02

Abstract: Disclosed herein are a showerhead and a deposition chamber containing the showerhead. The showerhead includes a first delivery network for a first precursor that comprises a first manifold connected with a first distribution system comprising a plurality of first distribution channels concentrically disposed around an axis, and a second delivery network for a second precursor that comprises a second manifold connected with a second distributions system comprising a plurality of second distribution channels concentrically disposed around the axis. The first delivery network and the second delivery network are isolated from each other within the showerhead.

公开(公告)号：US20250037974A1

公开(公告)日：2025-01-30

申请号：US18227226

申请日：2023-07-27

Applicant: Applied Materials, Inc.

Inventor： Dmitry LUBOMIRSKY ,  Junghoon KIM ,  Hyun Joo LEE ,  Pranav Vijay GADRE ,  Adib KHAN ,  Nithin Thomas ALEX ,  Douglas A. BUCHBERGER, Jr. ,  Qiwei LIANG ,  Ellie Y. YIEH ,  Shekhar ATHANI

IPC: H01J37/32

Abstract: Disclosed herein is a processing system. The processing system has an upper chamber body and a lower chamber body defining a processing environment. An upper heater is moveably disposed in the upper chamber body. The upper heater has a moveable support and an upper step formed along an outer perimeter. A lower showerhead is fixedly disposed in the lower chamber body. The lower showerhead includes a top surface configured to support a substrate, a lower step disposed along an outer perimeter wherein the substrate is configured to extend from the top surface partially over the lower step. Lift pins are disposed in the lower showerhead and configured to extend through the top surface and support the substrate thereon. Gas holes are disposed in a first zone along the top surface and a second zone on the step and configured to independently flow both a process and non-process gas.

公开(公告)号：US20240412957A1

公开(公告)日：2024-12-12

申请号：US18207042

申请日：2023-06-07

Applicant: Applied Materials, Inc.

Inventor： Gautam PISHARODY ,  Onkara Swamy KORA SIDDARAMAIAH ,  Vijay D. PARKHE ,  Douglas A. BUCHBERGER, Jr. ,  Qiwei LIANG ,  Dmitry LUBOMIRSKY

IPC: H01J37/32 ,  H01L21/683

Abstract: Examples of a substrate support are provided herein. In some examples, the substrate support has a ceramic electrostatic chuck having a body. The body has a first side configured to support a substrate and a second side opposite the first side. The body has a chucking electrode, an active edge electrode disposed adjacent the chucking electrode, a floating mesh disposed below the chucking electrode, a heater disposed below the floating mesh, and a ground mesh disposed below the heater, wherein the ground mesh is adjacent the second side.

公开(公告)号：US20200038797A1

公开(公告)日：2020-02-06

申请号：US16055929

申请日：2018-08-06

Applicant: Applied Materials, Inc.

Inventor： Adib KHAN ,  Qiwei LIANG ,  Sultan MALIK ,  Srinivas NEMANI ,  Rafika Smati ,  Joseph Ng ,  John O'Hehir

IPC: B01D53/04 ,  H01L21/673 ,  H01L21/67

Abstract: Embodiments of the present disclosure relate to gas abatement apparatus and effluent management. The apparatus described herein include a high pressure process chamber and a containment chamber surrounding the process chamber. A high pressure fluid delivery module is in fluid communication with the high pressure process chamber and is configured to deliver a high pressure fluid to the process chamber. An effluent management module includes a muffler assembly to effluent pressure reduction and a plurality of scrubbers provide for treatment of effluent.

公开(公告)号：US20200035509A1

公开(公告)日：2020-01-30

申请号：US16510847

申请日：2019-07-12

Applicant: Applied Materials, Inc.

Inventor： Adib M. KHAN ,  Qiwei LIANG ,  Sultan MALIK ,  Srinivas D. NEMANI

IPC: H01L21/447 ,  H01L21/67 ,  C23C16/452

Abstract: The present disclosure relates to high pressure processing apparatus for semiconductor processing. The apparatus described herein include a high pressure process chamber and a containment chamber surrounding the process chamber. A high pressure fluid delivery module is in fluid communication with the high pressure process chamber and is configured to deliver a high pressure fluid to the process chamber.

公开(公告)号：US20180261480A1

公开(公告)日：2018-09-13

申请号：US15917365

申请日：2018-03-09

Applicant: Applied Materials, Inc.

Inventor： Qiwei LIANG ,  Srinivas D. NEMANI ,  Adib KHAN ,  Venkata Ravishankar KASIBHOTLA ,  Sultan MALIK ,  Sean S. KANG ,  Keith Tatseun WONG

IPC: H01L21/67

CPC classification number: H01L21/67196 ,  C23C16/52 ,  H01L21/324 ,  H01L21/67017 ,  H01L21/67098 ,  H01L21/67103 ,  H01L21/67126 ,  H01L21/67167 ,  H01L21/6719 ,  H01L21/67201 ,  H01L21/68742 ,  H01L21/76841

Abstract: A high-pressure processing system for processing a substrate includes a first chamber, a pedestal positioned within the first chamber to support the substrate, a second chamber adjacent the first chamber, a vacuum processing system configured to lower a pressure within the second chamber to near vacuum, a valve assembly between the first chamber and the second chamber to isolate the pressure within the first chamber from the pressure within the second chamber, and a gas delivery system configured to introduce a processing gas into the first chamber and to increase the pressure within the first chamber to at least 10 atmospheres while the processing gas is in the first chamber and while the first chamber is isolated from the second chamber.

公开(公告)号：US20160109813A1

公开(公告)日：2016-04-21

申请号：US14581632

申请日：2014-12-23

Applicant: APPLIED MATERIALS, INC.

Inventor： Sang Ki NAM ,  Peng XIE ,  Qiwei LIANG ,  Ludovic GODET

IPC: G03F7/20 ,  G03F7/40

CPC classification number: G03F7/70733 ,  G03F7/38 ,  G03F7/40 ,  G03F7/70325

Abstract: A method of processing a substrate is disclosed herein. The method includes applying a photoresist layer comprising a photoacid generator to a substrate, wherein a first portion of the photoresist layer has been exposed unprotected by a photomask to a radiation light in a lithographic exposure process. The method also includes applying an electric field to alter movement of photoacid generated from the photoacid generator substantially in a vertical direction, wherein the electric field is applied by a first alternating pair of a positive voltage electrode and a negative voltage electrode and a second alternating pair of a positive voltage electrode and a negative voltage electrode.

Abstract translation: 本文公开了一种处理衬底的方法。 该方法包括将包含光致酸产生剂的光致抗蚀剂层施加到基底上，其中光致抗蚀剂层的第一部分已经在光刻曝光工艺中被光掩模曝光而不被辐射光照射。 该方法还包括施加电场以改变基本上沿垂直方向从光致酸产生器产生的光酸的移动，其中电场由正电压电极和负电压电极的第一交替对和第二交替对施加 的正电压电极和负电压电极。

公开(公告)号：US20240160117A1

公开(公告)日：2024-05-16

申请号：US18282509

申请日：2021-04-02

Applicant: Applied Materials, Inc.

Inventor： Dmitry LUBOMIRSKY ,  Kyle M. HANSON ,  Douglas A. BUCHBERGER, Jr. ,  Alan L. TSO ,  Rahul KOZHIKKALKANDI ,  Paul R. MCHUGH ,  Jiayi SUN ,  Qiwei LIANG ,  Nithin Thomas ALEX ,  Lancelot HUANG ,  Ellie Y. YIEH

IPC: G03F7/00 ,  G03F7/40

CPC classification number: G03F7/70875 ,  G03F7/40 ,  G03F7/707 ,  G03F7/70758

Abstract: Apparatus and method for substrate processing are described herein. More specifically, the apparatus and method are directed towards apparatus and method for performing a field guided post exposure bake operation on a semiconductor substrate. The apparatus is a processing module (100) and includes an upper portion (102) with an electrode (400) and a base portion (104) which is configured to support a substrate (500) on a substrate support surface (159). The upper portion (102) and the base portion (104) are actuated toward and away from one another using one or more arms (112) and form a process volume (404). The process volume (404) is filled with a process fluid and the processing module (100) is rotated about an axis (A). An electric field is applied to the substrate (500) by the electrode (400) before the process fluid is drained from the process volume (404).

公开(公告)号：US20200161156A1

公开(公告)日：2020-05-21

申请号：US16198569

申请日：2018-11-21

Applicant: APPLIED MATERIALS, INC.

Inventor： Jingyu QIAO ,  Qiwei LIANG ,  Viachslav BABAYAN ,  Seshadri RAMASWAMI ,  Srinivas D. NEMANI

IPC: H01L21/683 ,  C23C16/40 ,  C23C16/56

Abstract: Embodiments disclosed herein may include an electrostatic chuck (ESC) carrier. In an embodiment, the ESC carrier may comprise a carrier substrate having a first surface and a second surface opposite the first surface. In an embodiment, a first through substrate opening and a second through substrate opening may pass through the carrier substrate from the first surface to the second surface. Embodiments may include a first conductor in the first through substrate opening, and a second conductor in the second through substrate opening. In an embodiment, the ESC carrier may further comprise a first electrode over the first surface of the carrier substrate and electrically coupled to the first conductor, and a second electrode over the first surface of the carrier substrate and electrically coupled to the second conductor. In an embodiment, an oxide layer may be formed over the first electrode and the second electrode.

公开(公告)号：US20190119813A1

公开(公告)日：2019-04-25

申请号：US16126760

申请日：2018-09-10

Applicant: Applied Materials, Inc.

Inventor： Adib KHAN ,  Qiwei LIANG ,  Srinivas D. NEMANI ,  Tobin KAUFMAN-OSBORN

IPC: C23C16/455 ,  C23C16/448 ,  C23C16/44

Abstract: A method and apparatus for delivering gases to a semiconductor processing system are provided. In some embodiments, the apparatus includes a gas inlet line having an inlet valve; a gas outlet line having an outlet valve; a gas flow controller arranged to control the flow through the inlet valve; an orifice contained within at least one of the gas outlet line, the outlet valve, a chemical ampoule outlet valve, or outlet isolation valve; a chemical ampoule fluidly coupled to at least one of the gas inlet line and the gas outlet line; and a processing chamber. In some embodiments, the apparatus further includes a check valve, one or more orifices, and/or a heated divert line.