公开(公告)号：US10062685B2

公开(公告)日：2018-08-28

申请号：US15623210

申请日：2017-06-14

申请人： Alpha and Omega Semiconductor Incorporated

发明人： Sik Lui ,  Ji Pan

IPC分类号： H02M1/34 ,  H01L27/06 ,  H01L29/8605 ,  H01L29/66 ,  H01L29/40 ,  H01L49/02 ,  H01L29/94 ,  H01L29/78

CPC分类号： H01L27/0629 ,  H01L28/20 ,  H01L29/407 ,  H01L29/66181 ,  H01L29/66666 ,  H01L29/7803 ,  H01L29/7811 ,  H01L29/7813 ,  H01L29/8605 ,  H01L29/94 ,  H02M1/34 ,  H02M2001/348

摘要： Aspects of the present disclosure describe MOSFET devices that have snubber circuits. The snubber circuits comprise one or more resistors with a dynamically controllable resistance that is controlled by changes to a gate and/or drain potentials of the one or more MOSFET structures during switching events.

公开(公告)号：US20180108652A1

公开(公告)日：2018-04-19

申请号：US15294518

申请日：2016-10-14

申请人： Alpha and Omega Semiconductor Incorporated

发明人： Ji Pan ,  Sik Lui

IPC分类号： H01L27/088 ,  H01L29/423 ,  H01L27/02 ,  H01L29/10 ,  H01L21/8234 ,  H01L29/66 ,  H01L29/06 ,  H01L21/306 ,  H01L21/308 ,  H02M3/158

CPC分类号： H01L27/088 ,  H01L21/30604 ,  H01L21/308 ,  H01L21/823456 ,  H01L27/0207 ,  H01L29/0696 ,  H01L29/1079 ,  H01L29/1095 ,  H01L29/4236 ,  H01L29/66621 ,  H02M3/158

摘要： A switch circuit includes a first MOS transistor and a second MOS transistor of a same conductivity type connected in parallel between a first terminal and a second terminal of the switch circuit, the first and second MOS transistors having respective gate terminals coupled to the control terminal to receive a control signal to turn the first and second MOS transistors on or off. The first MOS transistor is characterized by a first reverse gate-to-drain capacitance (Crss) and the second MOS transistor is characterized by a second Crss that is greater than the first Crss.

公开(公告)号：US20170373185A1

公开(公告)日：2017-12-28

申请号：US15680712

申请日：2017-08-18

申请人： Alpha and Omega Semiconductor Incorporated

发明人： Hamza Yilmaz ,  Daniel Ng ,  Daniel Calafut ,  Madhur Bobde ,  Anup Bhalla ,  Ji Pan ,  Yeeheng Lee ,  Jongoh Kim

IPC分类号： H01L29/78 ,  H01L27/088 ,  H01L29/06 ,  H01L29/08 ,  H01L29/423 ,  H01L29/40 ,  H01L29/66 ,  H01L29/10 ,  H01L21/265 ,  H01L29/417 ,  H01L29/45

CPC分类号： H01L29/7813 ,  H01L21/26586 ,  H01L27/088 ,  H01L29/0623 ,  H01L29/0626 ,  H01L29/086 ,  H01L29/0865 ,  H01L29/0869 ,  H01L29/1095 ,  H01L29/404 ,  H01L29/407 ,  H01L29/41766 ,  H01L29/4236 ,  H01L29/42368 ,  H01L29/456 ,  H01L29/66727 ,  H01L29/66734 ,  H01L29/7811

摘要： A semiconductor power device may include a lightly doped layer formed on a heavily doped layer. One or more devices are formed in the lightly doped layer. Each device includes a body region, a source region, and one or more gate electrodes formed in corresponding trenches in the lightly doped region. Each trench has a first dimension (depth), a a second dimension (width) and a third dimension (length). The body region is of opposite conductivity type to the lightly and heavily doped layers. An opening is formed between first and second trenches through an upper portion of the source region and a body contact region to the body region. A deep implant region of the second conductivity type is formed in the lightly doped layer below the body region. The deep implant region is vertically aligned to the opening and spaced away from a bottom of the opening.

公开(公告)号：US09748375B2

公开(公告)日：2017-08-29

申请号：US15061901

申请日：2016-03-04

申请人： Alpha and Omega Semiconductor Incorporated

发明人： Hamza Yilmaz ,  Daniel Ng ,  Daniel Calafut ,  Madhur Bobde ,  Anup Bhalla ,  Ji Pan ,  Yeeheng Lee ,  Jongoh Kim

IPC分类号： H01L29/78 ,  H01L29/40 ,  H01L29/66 ,  H01L29/08 ,  H01L29/10 ,  H01L27/088 ,  H01L21/265 ,  H01L29/417 ,  H01L29/423 ,  H01L29/45 ,  H01L29/06

CPC分类号： H01L29/7813 ,  H01L21/26586 ,  H01L27/088 ,  H01L29/0623 ,  H01L29/0626 ,  H01L29/086 ,  H01L29/0865 ,  H01L29/0869 ,  H01L29/1095 ,  H01L29/404 ,  H01L29/407 ,  H01L29/41766 ,  H01L29/4236 ,  H01L29/42368 ,  H01L29/456 ,  H01L29/66727 ,  H01L29/66734 ,  H01L29/7811

摘要： A semiconductor power device may include a lightly doped layer formed on a heavily doped layer. One or more devices are formed in the lightly doped layer. Each device may include a body region, a source region, and one or more gate electrodes formed in corresponding trenches in the lightly doped region. Each of the trenches has a depth in a first dimension, a width in a second dimension and a length in a third dimension. The body region is of opposite conductivity type to the lightly and heavily doped layers. The source region is formed proximate the upper surface. One or more deep contacts are formed at one or more locations along the third dimension proximate one or more of the trenches. The contacts extend in the first direction from the upper surface into the lightly doped layer and are in electrical contact with the source region.

公开(公告)号：US20140319605A1

公开(公告)日：2014-10-30

申请号：US14329751

申请日：2014-07-11

申请人： Alpha and Omega Semiconductor Incorporated

发明人： Hamza Yilmaz ,  Daniel Ng ,  Daniel Calafut ,  Madhur Bobde ,  Anup Bhalla ,  Ji Pan ,  Yeeheng Lee ,  Jongoh Kim

IPC分类号： H01L29/78

CPC分类号： H01L29/7813 ,  H01L21/26586 ,  H01L27/088 ,  H01L29/0623 ,  H01L29/0626 ,  H01L29/086 ,  H01L29/0865 ,  H01L29/0869 ,  H01L29/1095 ,  H01L29/404 ,  H01L29/407 ,  H01L29/41766 ,  H01L29/4236 ,  H01L29/42368 ,  H01L29/456 ,  H01L29/66727 ,  H01L29/66734 ,  H01L29/7811

摘要： A semiconductor power device may include a lightly doped layer formed on a heavily doped layer. One or more devices are formed in the lightly doped layer. Each device may include a body region, a source region, and one or more gate electrodes formed in corresponding trenches in the lightly doped region. Each of the trenches has a depth in a first dimension, a width in a second dimension and a length in a third dimension. The body region is of opposite conductivity type to the lightly and heavily doped layers. The source region is formed proximate the upper surface. One or more deep contacts are formed at one or more locations along the third dimension proximate one or more of the trenches. The contacts extend in the first direction from the upper surface into the lightly doped layer and are in electrical contact with the source region.

摘要翻译： 半导体功率器件可以包括在重掺杂层上形成的轻掺杂层。 在轻掺杂层中形成一个或多个器件。 每个器件可以包括主体区域，源极区域和形成在轻掺杂区域中的对应沟槽中的一个或多个栅电极。 每个沟槽具有第一维度的深度，第二维度中的宽度和第三维度中的长度。 体区与轻掺杂层和重掺杂层具有相反的导电类型。 源区域靠近上表面形成。 在靠近一个或多个沟槽的第三维度的一个或多个位置处形成一个或多个深触点。 触点在第一方向上从上表面延伸到轻掺杂层中并与源区电接触。

公开(公告)号：US10388781B2

公开(公告)日：2019-08-20

申请号：US15161054

申请日：2016-05-20

申请人： Alpha and Omega Semiconductor Incorporated

发明人： Madhur Bobde ,  Sik Lui ,  Ji Pan

IPC分类号： H01L29/06 ,  H01L29/40 ,  H01L29/78 ,  H01L27/088 ,  H01L21/8234

摘要： A bi-directional switch device includes two inter-digitated back-to-back vertical metal oxide semiconductor field effect transistors (MOSFETs) formed on a substrate with their drains connected together, but otherwise isolated from each other.

公开(公告)号：US10192982B2

公开(公告)日：2019-01-29

申请号：US15680712

申请日：2017-08-18

申请人： Alpha and Omega Semiconductor Incorporated

发明人： Hamza Yilmaz ,  Daniel Ng ,  Daniel Calafut ,  Madhur Bobde ,  Anup Bhalla ,  Ji Pan ,  Yeeheng Lee ,  Jongoh Kim

IPC分类号： H01L29/78 ,  H01L29/40 ,  H01L29/66 ,  H01L29/08 ,  H01L29/10 ,  H01L27/088 ,  H01L21/265 ,  H01L29/417 ,  H01L29/423 ,  H01L29/45 ,  H01L29/06

摘要： A semiconductor power device may include a lightly doped layer formed on a heavily doped layer. One or more devices are formed in the lightly doped layer. Each device includes a body region, a source region, and one or more gate electrodes formed in corresponding trenches in the lightly doped region. Each trench has a first dimension (depth), a a second dimension (width) and a third dimension (length). The body region is of opposite conductivity type to the lightly and heavily doped layers. An opening is formed between first and second trenches through an upper portion of the source region and a body contact region to the body region. A deep implant region of the second conductivity type is formed in the lightly doped layer below the body region. The deep implant region is vertically aligned to the opening and spaced away from a bottom of the opening.

公开(公告)号：US20170338337A1

公开(公告)日：2017-11-23

申请号：US15161054

申请日：2016-05-20

申请人： Alpha and Omega Semiconductor Incorporated

发明人： Madhur Bobde ,  Sik Lui ,  Ji Pan

IPC分类号： H01L29/78 ,  H01L29/06 ,  H01L27/088

CPC分类号： H01L29/7811 ,  H01L21/823481 ,  H01L21/823487 ,  H01L27/088 ,  H01L29/0638 ,  H01L29/0649 ,  H01L29/407 ,  H01L29/7803 ,  H01L29/7813

摘要： A bi-directional switch device includes two inter-digitated back-to-back vertical metal oxide semiconductor field effect transistors (MOSFETs) formed on a substrate with their drains connected together, but otherwise isolated from each other.

公开(公告)号：US20160190309A1

公开(公告)日：2016-06-30

申请号：US15061901

申请日：2016-03-04

申请人： Alpha and Omega Semiconductor Incorporated

发明人： Hamza Yilmaz ,  Daniel Ng ,  Daniel Calafut ,  Madhur Bobde ,  Anup Bhalla ,  Ji Pan ,  Yeeheng Lee ,  Jongoh Kim

IPC分类号： H01L29/78 ,  H01L29/40 ,  H01L29/423 ,  H01L29/08 ,  H01L29/10 ,  H01L27/088

CPC分类号： H01L29/7813 ,  H01L21/26586 ,  H01L27/088 ,  H01L29/0623 ,  H01L29/0626 ,  H01L29/086 ,  H01L29/0865 ,  H01L29/0869 ,  H01L29/1095 ,  H01L29/404 ,  H01L29/407 ,  H01L29/41766 ,  H01L29/4236 ,  H01L29/42368 ,  H01L29/456 ,  H01L29/66727 ,  H01L29/66734 ,  H01L29/7811

摘要： A semiconductor power device may include a lightly doped layer formed on a heavily doped layer. One or more devices are formed in the lightly doped layer. Each device may include a body region, a source region, and one or more gate electrodes formed in corresponding trenches in the lightly doped region. Each of the trenches has a depth in a first dimension, a width in a second dimension and a length in a third dimension. The body region is of opposite conductivity type to the lightly and heavily doped layers. The source region is formed proximate the upper surface. One or more deep contacts are formed at one or more locations along the third dimension proximate one or more of the trenches. The contacts extend in the first direction from the upper surface into the lightly doped layer and are in electrical contact with the source region.

公开(公告)号：US09312336B2

公开(公告)日：2016-04-12

申请号：US14057465

申请日：2013-10-18

申请人： Alpha and Omega Semiconductor Incorporated

发明人： Ji Pan ,  Anup Bhalla

IPC分类号： H01L29/76 ,  H01L29/94 ,  H01L31/062 ,  H01L31/113 ,  H01L31/119 ,  H01L29/10 ,  H01L29/08 ,  H01L29/66 ,  H01L29/78 ,  H01L29/861 ,  H01L29/872 ,  H01L21/265 ,  H01L29/417 ,  H01L29/423 ,  H01L29/47

CPC分类号： H01L29/7813 ,  H01L21/26513 ,  H01L21/26586 ,  H01L21/30604 ,  H01L29/0865 ,  H01L29/0878 ,  H01L29/1037 ,  H01L29/1095 ,  H01L29/41766 ,  H01L29/4236 ,  H01L29/47 ,  H01L29/66128 ,  H01L29/66143 ,  H01L29/66727 ,  H01L29/66734 ,  H01L29/7806 ,  H01L29/7811 ,  H01L29/8611 ,  H01L29/872 ,  H01L29/8725

摘要： A semiconductor device includes a drain region, an epitaxial layer overlaying the drain region, and an active region. The active region includes: a body disposed in the epitaxial layer; a source embedded in the body; a gate trench extending into the epitaxial layer; a gate disposed in the gate trench; a contact trench extending through the source and at least part of the body; a contact electrode disposed in the contact trench; and an implant disposed at least in part along a contact trench wall; and an epitaxial enhancement portion disposed below the contact trench and in contact with the implant.

摘要翻译： 半导体器件包括漏极区域，覆盖漏极区域的外延层和有源区域。 有源区包括：设置在外延层中的主体; 一个嵌入人体的源头; 延伸到外延层中的栅极沟槽; 设置在栅极沟槽中的栅极; 延伸穿过所述源和所述主体的至少一部分的接触沟槽; 设置在所述接触沟槽中的接触电极; 以及至少部分地沿着接触沟槽壁设置的植入物; 以及设置在所述接触沟槽下方并与所述植入物接触的外延增强部分。