公开(公告)号：US20150316941A1

公开(公告)日：2015-11-05

申请号：US14580184

申请日：2014-12-22

Applicant: Applied Materials, Inc.

Inventor： Fernando M. SILVEIRA ,  Hamid Tavassoli ,  Xiaoping Zhou ,  Shane C. Nevil ,  Douglas A. Buchberger ,  Brad L. Mays ,  Tina Tsong ,  Chetan Mahadeswaraswamy ,  Yashaswini B. Pattar ,  Duy D. Nguyen ,  Walter R. Merry

IPC: G05D23/19 ,  H01J37/32

CPC classification number: H01J37/20 ,  H01J37/32724 ,  H01J37/32908 ,  H01J37/32926 ,  H01J37/32935 ,  H01J2237/2001 ,  H05H1/34

Abstract: Methods and systems for controlling temperatures in plasma processing chamber via pulsed application of heating power and pulsed application of cooling power. In an embodiment, temperature control is based at least in part on a feedforward control signal derived from a plasma power input into the processing chamber. In further embodiments, fluid levels in each of a hot and cold reservoir coupled to the temperature controlled component are maintained in part by a passive leveling pipe coupling the two reservoirs. In another embodiment, digital heat transfer fluid flow control valves are opened with pulse widths dependent on a heating/cooling duty cycle value and a proportioning cycle having a duration that has been found to provide good temperature control performance.

Abstract translation: 通过脉冲施加加热功率和脉冲施加冷却功率来控制等离子体处理室中的温度的方法和系统。 在一个实施例中，温度控制至少部分地基于从输入到处理室的等离子体功率得到的前馈控制信号。 在另外的实施例中，耦合到温度受控部件的热储存器和冷储存器中的每一个中的流体水平部分地由耦合两个储存器的被动流平管道保持。 在另一个实施例中，数字传热流体流量控制阀以取决于加热/冷却占空比值的脉冲宽度和具有已经被发现提供良好的温度控制性能的持续时间的配比循环打开。

公开(公告)号：US20130284369A1

公开(公告)日：2013-10-31

申请号：US13632302

申请日：2012-10-01

Applicant: APPLIED MATERIALS, INC.

Inventor： Satoru Kobayashi ,  Lawrence Wong ,  Jonathan Liu ,  Yang Yang ,  Kartik Ramaswamy ,  Shahid Rauf ,  Shane C. Nevil ,  Kallol Bera ,  Kenneth S. Collins

IPC: C23C16/505 ,  B05C9/00

CPC classification number: C23C16/505 ,  B05C9/00 ,  H01J37/32091 ,  H01J37/32174 ,  H01J37/3299

Abstract: Plasma distribution is controlled in a plasma reactor by controlling the phase difference between opposing RF electrodes, in accordance with a desired or user-selected phase difference, by a phase-lock feedback control loop.

Abstract translation: 通过相位锁定反馈控制回路根据期望或用户选择的相位差控制相对RF电极之间的相位差，在等离子体反应器中控制等离子体分布。

公开(公告)号：US09358702B2

公开(公告)日：2016-06-07

申请号：US14139116

申请日：2013-12-23

Applicant: Applied Materials, Inc.

Inventor： Sumanth Banda ,  Jennifer Y. Sun ,  Douglas A Buchberger, Jr. ,  Shane C. Nevil

IPC: B23Q3/06 ,  B28D5/00 ,  H01L21/67 ,  H01L21/683 ,  H01L21/687

CPC classification number: B28D5/0082 ,  H01L21/67103 ,  H01L21/6831 ,  H01L21/6875 ,  H01L21/68757 ,  Y10T29/49826 ,  Y10T279/23

Abstract: An unseasoned substrate support assembly includes a ceramic body and a thermally conductive base bonded to a lower surface of the ceramic body. The substrate support assembly further includes an upper surface of the ceramic body having a first portion proximate to a center of the upper surface of the ceramic body and having a first roughness profile and a second portion distal from the center of the upper surface of the ceramic body and having a second roughness profile with a lower roughness than the first roughness profile, wherein areas of the first and second portions are based on radial distances from the center of the ceramic body.

Abstract translation: 未干燥的基板支撑组件包括陶瓷体和结合到陶瓷体的下表面的导热基体。 衬底支撑组件还包括陶瓷体的上表面，其具有靠近陶瓷体的上表面的中心的第一部分，并且具有第一粗糙度轮廓和远离陶瓷上表面中心的第二部分 并且具有比第一粗糙度轮廓更低的粗糙度的第二粗糙度轮廓，其中第一和第二部分的区域基于距陶瓷体的中心的径向距离。

公开(公告)号：US20140203526A1

公开(公告)日：2014-07-24

申请号：US14139116

申请日：2013-12-23

Applicant: Applied Materials, Inc.

Inventor： Sumanth Banda ,  Jennifer Y. Sun ,  Douglas A. Buchberger, JR. ,  Shane C. Nevil

IPC: B23Q3/06

CPC classification number: B28D5/0082 ,  H01L21/67103 ,  H01L21/6831 ,  H01L21/6875 ,  H01L21/68757 ,  Y10T29/49826 ,  Y10T279/23

Abstract: An unseasoned substrate support assembly includes a ceramic body and a thermally conductive base bonded to a lower surface of the ceramic body. The substrate support assembly further includes an upper surface of the ceramic body having a first portion proximate to a center of the upper surface of the ceramic body and having a first roughness profile and a second portion distal from the center of the upper surface of the ceramic body and having a second roughness profile with a lower roughness than the first roughness profile, wherein areas of the first and second portions are based on radial distances from the center of the ceramic body.

Abstract translation: 未干燥的基板支撑组件包括陶瓷体和结合到陶瓷体的下表面的导热基体。 衬底支撑组件还包括陶瓷体的上表面，其具有靠近陶瓷体的上表面的中心的第一部分，并且具有第一粗糙度轮廓和远离陶瓷上表面中心的第二部分 并且具有比第一粗糙度轮廓更低的粗糙度的第二粗糙度轮廓，其中第一和第二部分的区域基于距陶瓷体的中心的径向距离。

公开(公告)号：US20130277333A1

公开(公告)日：2013-10-24

申请号：US13842287

申请日：2013-03-15

Applicant: APPLIED MATERIALS, INC.

Inventor： Nipun Misra ,  Kartik Ramaswamy ,  Yang Yang ,  Douglas A. Buchberger, JR. ,  James D. Carducci ,  Lawrence Wong ,  Shane C. Nevil ,  Shahid Rauf ,  Kenneth S. Collins

IPC: C23F1/08 ,  C23C16/505

CPC classification number: C23F1/08 ,  C23C16/505 ,  H01J37/32082 ,  H01J37/32183

Abstract: In a plasma reactor having a driven electrode and a counter electrode, an impedance controller connected between the counter electrode and ground includes both series sand parallel variable impedance elements that facilitate two-dimensional movement of a ground path input impedance in a complex impedance space to control spatial distribution of a plasma process parameter.

Abstract translation: 在具有驱动电极和对电极的等离子体反应器中，连接在对电极和地之间的阻抗控制器包括两个串联的砂平行的可变阻抗元件，它们促进复阻抗空间中的接地路径输入阻抗的二维运动以控制 等离子体工艺参数的空间分布。

公开(公告)号：US09214315B2

公开(公告)日：2015-12-15

申请号：US14580184

申请日：2014-12-22

Applicant: Applied Materials, Inc.

Inventor： Fernando M. Silveira ,  Hamid Tavassoli ,  Xiaoping Zhou ,  Shane C. Nevil ,  Douglas A. Buchberger ,  Brad L. Mays ,  Tina Tsong ,  Chetan Mahadeswaraswamy ,  Yashaswini B. Pattar ,  Duy D. Nguyen ,  Walter R. Merry

IPC: B23K10/00 ,  H01J37/20 ,  H05H1/34

CPC classification number: H01J37/20 ,  H01J37/32724 ,  H01J37/32908 ,  H01J37/32926 ,  H01J37/32935 ,  H01J2237/2001 ,  H05H1/34

Abstract: Methods and systems for controlling temperatures in plasma processing chamber via pulsed application of heating power and pulsed application of cooling power. In an embodiment, temperature control is based at least in part on a feedforward control signal derived from a plasma power input into the processing chamber. In further embodiments, fluid levels in each of a hot and cold reservoir coupled to the temperature controlled component are maintained in part by a passive leveling pipe coupling the two reservoirs. In another embodiment, digital heat transfer fluid flow control valves are opened with pulse widths dependent on a heating/cooling duty cycle value and a proportioning cycle having a duration that has been found to provide good temperature control performance.

Abstract translation: 通过脉冲施加加热功率和脉冲施加冷却功率来控制等离子体处理室中的温度的方法和系统。 在一个实施例中，温度控制至少部分地基于从输入到处理室的等离子体功率得到的前馈控制信号。 在另外的实施例中，耦合到温度受控部件的热储存器和冷储存器中的每一个中的流体水平部分地由耦合两个储存器的被动流平管道保持。 在另一个实施例中，数字传热流体流量控制阀以取决于加热/冷却占空比值的脉冲宽度和具有已经被发现提供良好的温度控制性能的持续时间的配比循环打开。