发明申请
US20130277333A1 PLASMA PROCESSING USING RF RETURN PATH VARIABLE IMPEDANCE CONTROLLER WITH TWO-DIMENSIONAL TUNING SPACE
审中-公开
使用RF返回路径的等离子体处理可变阻抗控制器与二维调谐空间
- 专利标题： PLASMA PROCESSING USING RF RETURN PATH VARIABLE IMPEDANCE CONTROLLER WITH TWO-DIMENSIONAL TUNING SPACE
- 专利标题（中）： 使用RF返回路径的等离子体处理可变阻抗控制器与二维调谐空间
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申请号： US13842287申请日： 2013-03-15
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公开(公告)号： US20130277333A1公开(公告)日： 2013-10-24
- 发明人: Nipun Misra , Kartik Ramaswamy , Yang Yang , Douglas A. Buchberger, JR. , James D. Carducci , Lawrence Wong , Shane C. Nevil , Shahid Rauf , Kenneth S. Collins
- 申请人： APPLIED MATERIALS, INC.
- 主分类号： C23F1/08
- IPC分类号： C23F1/08 ; C23C16/505
摘要：
In a plasma reactor having a driven electrode and a counter electrode, an impedance controller connected between the counter electrode and ground includes both series sand parallel variable impedance elements that facilitate two-dimensional movement of a ground path input impedance in a complex impedance space to control spatial distribution of a plasma process parameter.
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