公开(公告)号：US11417534B2

公开(公告)日：2022-08-16

申请号：US16138507

申请日：2018-09-21

Applicant: Applied Materials, Inc.

Inventor： Ming Xia ,  Dongqing Yang ,  Ching-Mei Hsu

IPC: H01L21/311 ,  H01L21/67

Abstract: Exemplary methods for removing nitride may include flowing a fluorine-containing precursor into a remote plasma region of a semiconductor processing chamber. The methods may further include forming a plasma within the remote plasma region to generate plasma effluents of the fluorine-containing precursor and flowing the plasma effluents into a processing region of the semiconductor processing chamber housing a substrate. The substrate may include a high-aspect-ratio feature. The substrate may further include a region of exposed nitride and a region of exposed oxide. The methods may further include providing a hydrogen-containing precursor to the processing region to produce an etchant. At least a portion of the exposed nitride may be removed with the etchant.

公开(公告)号：US20220115263A1

公开(公告)日：2022-04-14

申请号：US17558848

申请日：2021-12-22

Applicant: Applied Materials, Inc.

Inventor： Ashish Pal ,  Gaurav Thareja ,  Sankuei Lin ,  Ching-Mei Hsu ,  Nitin K. Ingle ,  Ajay Bhatnagar ,  Anchuan Wang

IPC: H01L21/764 ,  H01L21/8238 ,  H01L29/06 ,  H01L29/66 ,  H01L29/78 ,  H01L27/092

Abstract: Processing methods may be performed to form an airgap spacer on a semiconductor substrate. The methods may include forming a spacer structure including a first material and a second material different from the first material. The methods may include forming a source/drain structure. The source/drain structure may be offset from the second material of the spacer structure by at least one other material. The methods may also include etching the second material from the spacer structure to form the airgap. The source/drain structure may be unexposed to etchant materials during the etching.

公开(公告)号：US09449845B2

公开(公告)日：2016-09-20

申请号：US14584099

申请日：2014-12-29

Applicant: Applied Materials, Inc.

Inventor： Jie Liu ,  Jingchun Zhang ,  Anchuan Wang ,  Nitin K. Ingle ,  Seung Park ,  Zhijun Chen ,  Ching-Mei Hsu

IPC: H01L21/302 ,  H01L21/3213 ,  H01J37/32

CPC classification number: H01L21/32136 ,  H01J37/32357

Abstract: Methods of etching exposed titanium nitride with respect to other materials on patterned heterogeneous structures are described, and may include a remote plasma etch formed from a fluorine-containing precursor. Precursor combinations including plasma effluents from the remote plasma are flowed into a substrate processing region to etch the patterned structures with high titanium nitride selectivity under a variety of operating conditions. The methods may be used to remove titanium nitride at faster rates than a variety of metal, nitride, and oxide compounds.

Abstract translation: 描述了相对于图案化异质结构上的其它材料蚀刻暴露的氮化钛的方法，并且可以包括由含氟前体形成的远程等离子体蚀刻。 包括来自远程等离子体的等离子体流出物的前体组合流入基板处理区域以在各种操作条件下以高氮化钛选择性蚀刻图案化结构。 该方法可用于以比各种金属，氮化物和氧化物化合物更快的速率除去氮化钛。

公开(公告)号：US20160064233A1

公开(公告)日：2016-03-03

申请号：US14936448

申请日：2015-11-09

Applicant: Applied Materials, Inc.

Inventor： Anchuan Wang ,  Xinglong Chen ,  Zihui Li ,  Hiroshi Hamana ,  Zhijun Chen ,  Ching-Mei Hsu ,  Jiayin Huang ,  Nitin K. Ingle ,  Dmitry Lubomirsky ,  Shankar Venkataraman ,  Randhir Thakur

IPC: H01L21/3065

CPC classification number: H01L21/324 ,  C23C16/4405 ,  H01J37/32357 ,  H01J37/32862 ,  H01L21/02041 ,  H01L21/02057 ,  H01L21/0206 ,  H01L21/263 ,  H01L21/2686 ,  H01L21/30604 ,  H01L21/3065 ,  H01L21/3105 ,  H01L21/31111 ,  H01L21/31116 ,  H01L21/31144 ,  H01L21/32136 ,  H01L21/32137 ,  H01L21/67069 ,  H01L21/67075 ,  H01L21/6708 ,  H01L21/67109 ,  H01L21/67115 ,  H01L21/67184 ,  H01L21/6719 ,  H01L21/67196 ,  H01L21/67201 ,  H01L21/67207 ,  H01L21/67248 ,  H01L21/67253 ,  H01L21/67288 ,  H01L21/67703 ,  H01L21/67739 ,  H01L21/67742 ,  H01L21/6831

Abstract: Systems, chambers, and processes are provided for controlling process defects caused by moisture contamination. The systems may provide configurations for chambers to perform multiple operations in a vacuum or controlled environment. The chambers may include configurations to provide additional processing capabilities in combination chamber designs. The methods may provide for the limiting, prevention, and correction of aging defects that may be caused as a result of etching processes performed by system tools.

公开(公告)号：US09184055B2

公开(公告)日：2015-11-10

申请号：US14246952

申请日：2014-04-07

Applicant: APPLIED MATERIALS, INC.

Inventor： Anchuan Wang ,  Xinglong Chen ,  Zihui Li ,  Hiroshi Hamana ,  Zhijun Chen ,  Ching-Mei Hsu ,  Jiayin Huang ,  Nitin K. Ingle ,  Dmitry Lubomirsky ,  Shankar Venkataraman ,  Randhir Thakur

IPC: H01L21/263 ,  H01L21/02 ,  H01L21/67 ,  C23C16/44 ,  H01L21/677 ,  H01L21/306 ,  H01L21/3065 ,  H01L21/683 ,  H01L21/3213 ,  H01L21/311 ,  H01J37/32

CPC classification number: H01L21/324 ,  C23C16/4405 ,  H01J37/32357 ,  H01J37/32862 ,  H01L21/02041 ,  H01L21/02057 ,  H01L21/0206 ,  H01L21/263 ,  H01L21/2686 ,  H01L21/30604 ,  H01L21/3065 ,  H01L21/3105 ,  H01L21/31111 ,  H01L21/31116 ,  H01L21/31144 ,  H01L21/32136 ,  H01L21/32137 ,  H01L21/67069 ,  H01L21/67075 ,  H01L21/6708 ,  H01L21/67109 ,  H01L21/67115 ,  H01L21/67184 ,  H01L21/6719 ,  H01L21/67196 ,  H01L21/67201 ,  H01L21/67207 ,  H01L21/67248 ,  H01L21/67253 ,  H01L21/67288 ,  H01L21/67703 ,  H01L21/67739 ,  H01L21/67742 ,  H01L21/6831

Abstract: Systems, chambers, and processes are provided for controlling process defects caused by moisture contamination. The systems may provide configurations for chambers to perform multiple operations in a vacuum or controlled environment. The chambers may include configurations to provide additional processing capabilities in combination chamber designs. The methods may provide for the limiting, prevention, and correction of aging defects that may be caused as a result of etching processes performed by system tools.

Abstract translation: 提供系统，室和过程以控制由水分污染引起的过程缺陷。 这些系统可以提供腔室的配置，以在真空或受控环境中执行多个操作。 腔室可以包括在组合腔室设计中提供附加处理能力的构造。 这些方法可以提供由系统工具执行的蚀刻工艺可能引起的老化缺陷的限制，预防和校正。

公开(公告)号：US20150235865A1

公开(公告)日：2015-08-20

申请号：US14703299

申请日：2015-05-04

Applicant: Applied Materials, Inc.

Inventor： Anchuan Wang ,  Xinglong Chen ,  Zihui Li ,  Hiroshi Hamana ,  Zhijun Chen ,  Ching-Mei Hsu ,  Jiayin Huang ,  Nitin K. Ingle ,  Dmitry Lubomirsky ,  Shankar Venkataraman ,  Randhir Thakur

IPC: H01L21/324 ,  H01L21/306 ,  H01L21/311 ,  H01L21/3065

CPC classification number: H01L21/324 ,  C23C16/4405 ,  H01J37/32357 ,  H01J37/32862 ,  H01L21/02041 ,  H01L21/02057 ,  H01L21/0206 ,  H01L21/263 ,  H01L21/2686 ,  H01L21/30604 ,  H01L21/3065 ,  H01L21/3105 ,  H01L21/31111 ,  H01L21/31116 ,  H01L21/31144 ,  H01L21/32136 ,  H01L21/32137 ,  H01L21/67069 ,  H01L21/67075 ,  H01L21/6708 ,  H01L21/67109 ,  H01L21/67115 ,  H01L21/67184 ,  H01L21/6719 ,  H01L21/67196 ,  H01L21/67201 ,  H01L21/67207 ,  H01L21/67248 ,  H01L21/67253 ,  H01L21/67288 ,  H01L21/67703 ,  H01L21/67739 ,  H01L21/67742 ,  H01L21/6831

Abstract: Systems, chambers, and processes are provided for controlling process defects caused by moisture contamination. The systems may provide configurations for chambers to perform multiple operations in a vacuum or controlled environment. The chambers may include configurations to provide additional processing capabilities in combination chamber designs. The methods may provide for the limiting, prevention, and correction of aging defects that may be caused as a result of etching processes performed by system tools.

Abstract translation: 提供系统，室和过程以控制由水分污染引起的过程缺陷。 这些系统可以提供腔室的配置，以在真空或受控环境中执行多个操作。 腔室可以包括在组合腔室设计中提供附加处理能力的构造。 这些方法可以提供由系统工具执行的蚀刻工艺可能引起的老化缺陷的限制，预防和校正。

公开(公告)号：US08921234B2

公开(公告)日：2014-12-30

申请号：US13791125

申请日：2013-03-08

Applicant: Applied Materials, Inc.

Inventor： Jie Liu ,  Jingchun Zhang ,  Anchuan Wang ,  Nitin K. Ingle ,  Seung Park ,  Zhijun Chen ,  Ching-Mei Hsu

IPC: H01L21/302 ,  H01J37/32 ,  H01L21/3213

CPC classification number: H01L21/32136 ,  H01J37/32357

Abstract: Methods of etching exposed titanium nitride with respect to other materials on patterned heterogeneous structures are described, and may include a remote plasma etch formed from a fluorine-containing precursor. Precursor combinations including plasma effluents from the remote plasma are flowed into a substrate processing region to etch the patterned structures with high titanium nitride selectivity under a variety of operating conditions. The methods may be used to remove titanium nitride at faster rates than a variety of metal, nitride, and oxide compounds.

Abstract translation: 描述了相对于图案化异质结构上的其它材料蚀刻暴露的氮化钛的方法，并且可以包括由含氟前体形成的远程等离子体蚀刻。 包括来自远程等离子体的等离子体流出物的前体组合流入基板处理区域以在各种操作条件下以高氮化钛选择性蚀刻图案化结构。 该方法可用于以比各种金属，氮化物和氧化物化合物更快的速率除去氮化钛。

公开(公告)号：US11735467B2

公开(公告)日：2023-08-22

申请号：US17558848

申请日：2021-12-22

Applicant: Applied Materials, Inc.

Inventor： Ashish Pal ,  Gaurav Thareja ,  Sankuei Lin ,  Ching-Mei Hsu ,  Nitin K. Ingle ,  Ajay Bhatnagar ,  Anchuan Wang

IPC: H01L21/764 ,  H01L21/8238 ,  H01L29/06 ,  H01L29/66 ,  H01L29/78 ,  H01L27/092 ,  H01L29/417

CPC classification number: H01L21/764 ,  H01L21/823814 ,  H01L21/823821 ,  H01L21/823864 ,  H01L21/823878 ,  H01L27/0924 ,  H01L29/0649 ,  H01L29/6656 ,  H01L29/66795 ,  H01L29/785 ,  H01L29/7851 ,  H01L29/41791

Abstract: Processing methods may be performed to form an airgap spacer on a semiconductor substrate. The methods may include forming a spacer structure including a first material and a second material different from the first material. The methods may include forming a source/drain structure. The source/drain structure may be offset from the second material of the spacer structure by at least one other material. The methods may also include etching the second material from the spacer structure to form the airgap. The source/drain structure may be unexposed to etchant materials during the etching.

公开(公告)号：US09412608B2

公开(公告)日：2016-08-09

申请号：US14617779

申请日：2015-02-09

Applicant: Applied Materials, Inc.

Inventor： Xikun Wang ,  Ching-Mei Hsu ,  Nitin K. Ingle ,  Zihui Li ,  Anchuan Wang

IPC: H01L21/302 ,  H01L21/3065 ,  H01L21/3213 ,  H01J37/32 ,  H01L21/02

CPC classification number: H01L21/3065 ,  H01J37/32357 ,  H01L21/02049 ,  H01L21/32136

Abstract: Methods of selectively etching tungsten relative to silicon-containing films (e.g. silicon oxide, silicon carbon nitride and (poly)silicon) as well as tungsten oxide are described. The methods include a remote plasma etch formed from a fluorine-containing precursor and/or hydrogen (H2). Plasma effluents from the remote plasma are flowed into a substrate processing region where the plasma effluents react with the tungsten. The plasma effluents react with exposed surfaces and selectively remove tungsten while very slowly removing other exposed materials. Sequential and simultaneous methods are included to remove thin tungsten oxide which may, for example, result from exposure to the atmosphere.

公开(公告)号：US20160027673A1

公开(公告)日：2016-01-28

申请号：US14875479

申请日：2015-10-05

Applicant: APPLIED MATERIALS, INC.

Inventor： Anchuan Wang ,  Xinglong Chen ,  Zihui Li ,  Hiroshi Hamana ,  Zhijun Chen ,  Ching-Mei Hsu ,  Jiayin Huang ,  Nitin K. Ingle ,  Dmitry Lubomirsky ,  Shankar Venkataraman ,  Randhir Thakur

IPC: H01L21/67 ,  H01L21/677

Abstract: Systems, chambers, and processes are provided for controlling process defects caused by moisture contamination. The systems may provide configurations for chambers to perform multiple operations in a vacuum or controlled environment. The chambers may include configurations to provide additional processing capabilities in combination chamber designs. The methods may provide for the limiting, prevention, and correction of aging defects that may be caused as a result of etching processes performed by system tools.