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    Chamber and methods of treating a substrate after exposure to radiation
    1.
    发明授权
    Chamber and methods of treating a substrate after exposure to radiation 有权

    公开(公告)号：US12181801B2

    公开(公告)日：2024-12-31

    申请号：US17531108

    申请日：2021-11-19

    Applicant: Applied Materials, Inc.

    Inventor： Dmitry Lubomirsky ,  Douglas A. Buchberger, Jr. ,  Qiwei Liang ,  Hyunjun Kim ,  Ellie Y. Yieh

    IPC: G03F7/38 ,  H01J37/32

    Abstract: A method and apparatus for performing post-exposure bake operations is described herein. The apparatus includes a plate stack and enables formation of a first high ion density plasma before the ion concentration within the first high ion density plasma is reduced using a diffuser to form a second low ion density plasma. The second low ion density plasma is an electron cloud or a dark plasma. An electric field is formed between a substrate support and the diffuser and through the second low ion density plasma during post-exposure bake of a substrate disposed on the substrate support. The second low ion density plasma electrically couples the substrate support and the diffuser during application of the electric field. The plate stack is equipped with power supplies and insulators to enable the formation or modification of a plasma within three regions of a process chamber.

    Apparatus for post exposure bake of photoresist
    3.
    发明授权
    Apparatus for post exposure bake of photoresist 有权

    公开(公告)号：US11934103B2

    公开(公告)日：2024-03-19

    申请号：US17668080

    申请日：2022-02-09

    Applicant: Applied Materials, Inc.

    Inventor： Douglas A. Buchberger, Jr. ,  Dmitry Lubomirsky ,  John O. Dukovic ,  Srinivas D. Nemani

    IPC: G03F7/38

    CPC classification number: G03F7/38

    Abstract: A method and apparatus for applying an electric field and/or a magnetic field to a photoresist layer without air gap intervention during photolithography processes is provided herein. The method and apparatus include a transfer device and a plurality of modules. The transfer device is configured to rotate a plurality of substrates between each of the modules, wherein one module includes a heating pedestal and another module includes a cooling pedestal. One module is utilized for inserting and removing the substrates from the system. At least the heating module is able to be sealed and filled with a process volume before applying the electric field.

    SEMICONDUCTOR CHAMBER COATINGS AND PROCESSES
    4.
    发明申请
    SEMICONDUCTOR CHAMBER COATINGS AND PROCESSES 有权

    公开(公告)号：US20230116437A1

    公开(公告)日：2023-04-13

    申请号：US18080884

    申请日：2022-12-14

    Applicant: Applied Materials, Inc.

    Inventor： Laksheswar Kalita ,  Son Nguyen ,  Dmitry Lubomirsky ,  Kenneth D. Schatz

    IPC: H01J37/32 ,  H01L21/67 ,  H01L21/3065

    Abstract: Systems and methods may be used to produce coated components. Exemplary semiconductor chamber components may include an aluminum alloy comprising nickel and may be characterized by a surface. The surface may include a corrosion resistant coating. The corrosion resistant coating may include a conformal layer and a non-metal layer. The conformal layer may extend about the semiconductor chamber component. The non-metal oxide layer may extend over a surface of the conformal layer. The non-metal oxide layer may be characterized by an amorphous microstructure having a hardness of from about 300 HV to about 10,000 HV. The non-metal oxide layer may also be characterized by an sp2 to sp3 hybridization ratio of from about 0.01 to about 0.5 and a hydrogen content of from about 1 wt. % to about 35 wt. %.

    Plasma etching systems and methods with secondary plasma injection
    5.
    发明授权
    Plasma etching systems and methods with secondary plasma injection 有权

    公开(公告)号：US11476093B2

    公开(公告)日：2022-10-18

    申请号：US16704387

    申请日：2019-12-05

    Applicant: Applied Materials, Inc.

    Inventor： Toan Q. Tran ,  Soonam Park ,  Zilu Weng ,  Dmitry Lubomirsky

    IPC: H01J37/32

    Abstract: An apparatus for plasma processing includes a first plasma source, a first planar electrode, a gas distribution device, a plasma blocking screen and a workpiece chuck. The first plasma source produces first plasma products that pass, away from the first plasma source, through first apertures in the first planar electrode. The first plasma products continue through second apertures in the gas distribution device. The plasma blocking screen includes a third plate with fourth apertures, and faces the gas distribution device such that the first plasma products pass through the plurality of fourth apertures. The workpiece chuck faces the second side of the plasma blocking screen, defining a process chamber between the plasma blocking screen and the workpiece chuck. The fourth apertures are of a sufficiently small size to block a plasma generated in the process chamber from reaching the gas distribution device.

    Chamber apparatus for chemical etching of dielectric materials
    7.
    发明授权
    Chamber apparatus for chemical etching of dielectric materials 有权

    公开(公告)号：US11302520B2

    公开(公告)日：2022-04-12

    申请号：US14747367

    申请日：2015-06-23

    Applicant: Applied Materials, Inc.

    Inventor： Tien Fak Tan ,  Dmitry Lubomirsky ,  Kirby H. Floyd ,  Son T. Nguyen ,  David Palagashvili ,  Alexander Tam ,  Shaofeng Chen

    IPC: H01J37/32

    Abstract: Implementations of the disclosure generally provide an improved pedestal heater for a processing chamber. The pedestal heater includes a temperature-controlled plate having a first surface and a second surface opposing the first surface. The temperature-controlled plate includes an inner zone comprising a first set of heating elements, an outer zone comprising a second set of heating elements, the outer zone surrounding the inner zone, and a continuous thermal choke disposed between the inner zone and the outer zone, and a substrate receiving plate having a first surface and a second surface opposing the first surface, the second surface of the substrate receiving plate is coupled to the first surface of the temperature-controlled plate. The continuous thermal choke enables a very small temperature gradient to be created and manipulated between the inner zone and the outer zone, allowing center-fast or edge-fast etching profile to achieve on a surface of the substrate.

    Semiconductor processing chamber for multiple precursor flow
    9.
    发明授权
    Semiconductor processing chamber for multiple precursor flow 有权

    公开(公告)号：US11276559B2

    公开(公告)日：2022-03-15

    申请号：US15597973

    申请日：2017-05-17

    Applicant: Applied Materials, Inc.

    Inventor： Mehmet Tugrul Samir ,  Dongqing Yang ,  Dmitry Lubomirsky ,  Peter Hillman ,  Soonam Park ,  Martin Yue Choy ,  Lala Zhu

    IPC: H01J37/32

    Abstract: Exemplary semiconductor processing systems may include a processing chamber, and may include a remote plasma unit coupled with the processing chamber. Exemplary systems may also include an adapter coupled with the remote plasma unit. The adapter may include a first end and a second end opposite the first end. The adapter may define a central channel through the adapter. The adapter may define an exit from a second channel at the second end, and the adapter may define an exit from a third channel at the second end. The central channel, the second channel, and the third channel may each be fluidly isolated from one another within the adapter.

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