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    Semiconductor memory device with a memory cell block including a block film
    1.
    发明授权
    Semiconductor memory device with a memory cell block including a block film 有权
    具有包括块膜的存储单元块的半导体存储器件

    公开(公告)号：US09018613B2

    公开(公告)日：2015-04-28

    申请号：US13730342

    申请日：2012-12-28

    Applicant: Yasuhiro Nojiri ,  Hiroyuki Fukumizu ,  Shigeki Kobayashi ,  Masaki Yamato

    Inventor： Yasuhiro Nojiri ,  Hiroyuki Fukumizu ,  Shigeki Kobayashi ,  Masaki Yamato

    IPC: H01L29/02 ,  H01L45/00 ,  H01L27/24

    CPC classification number: H01L45/146 ,  H01L27/2454 ,  H01L27/249 ,  H01L45/04 ,  H01L45/12 ,  H01L45/1226 ,  H01L45/16 ,  H01L45/1616

    Abstract: A semiconductor memory device according to an embodiment comprises: a semiconductor substrate; and a memory cell block formed on the semiconductor substrate and configured having a plurality of memory cell arrays, each of the memory cell arrays including a plurality of column lines, a plurality of row lines, and a plurality of memory cells disposed at each of intersections of the plurality of column lines and the plurality of row lines, each of the memory cells including a variable resistance element having a transition metal oxide as a material, at least one of the plurality of column lines and the plurality of row lines being a polysilicon wiring line having polysilicon as a material, and the memory cell block including a block film between the variable resistance element of the memory cell and the polysilicon wiring line.

    Abstract translation: 根据实施例的半导体存储器件包括：半导体衬底; 以及存储单元块，其形成在所述半导体基板上并且具有多个存储单元阵列，所述存储单元阵列中的每一个包括多个列线，多条行线以及设置在各交叉点的多个存储单元 在多个列线和多条行线中，每个存储单元包括具有过渡金属氧化物作为材料的可变电阻元件，所述多条列线和所述多条行线中的至少一条是多晶硅 具有多晶硅作为材料的布线，并且存储单元块包括存储单元的可变电阻元件与多晶硅布线之间的块膜。

    Nonvolatile semiconductor memory device
    2.
    发明授权
    Nonvolatile semiconductor memory device 有权
    非易失性半导体存储器件

    公开(公告)号：US08735859B2

    公开(公告)日：2014-05-27

    申请号：US13512774

    申请日：2010-11-29

    Applicant: Shuichi Kuboi ,  Masayuki Takata ,  Tsukasa Nakai ,  Hiroyuki Fukumizu ,  Yasuhiro Nojiri ,  Kenichi Ootsuka

    Inventor： Shuichi Kuboi ,  Masayuki Takata ,  Tsukasa Nakai ,  Hiroyuki Fukumizu ,  Yasuhiro Nojiri ,  Kenichi Ootsuka

    IPC: H01L29/02

    CPC classification number: H01L27/101 ,  H01L27/2409 ,  H01L45/04 ,  H01L45/148

    Abstract: A nonvolatile semiconductor memory device includes: a first interconnect; a second interconnect at a position opposing the first interconnect; and a variable resistance layer between the first interconnect and the second interconnect, the variable resistance layer being capable of reversibly changing between a first state and a second state by a voltage applied via the first interconnect and the second interconnect or a current supplied via the first interconnect and the second interconnect, the first state having a first resistivity, the second state having a second resistivity higher than the first resistivity. Wherein the variable resistance layer has a compound of carbon and silicon as a main component and including hydrogen.

    Abstract translation: 非易失性半导体存储器件包括：第一互连; 在与所述第一互连相对的位置处的第二互连; 以及第一互连和第二互连之间的可变电阻层，可变电阻层能够通过经由第一互连和第二互连施加的电压在第一状态和第二状态之间可逆地改变，或者经由第一互连 互连和第二互连，第一状态具有第一电阻率，第二状态具有比第一电阻率高的第二电阻率。 其中可变电阻层具有碳和硅作为主要成分并包括氢的化合物。

    NON-VOLATILE SEMICONDUCTOR STORAGE DEVICE AND MANUFACTURING METHOD OF NON-VOLATILE SEMICONDUCTOR STORAGE DEVICE
    4.
    发明申请
    NON-VOLATILE SEMICONDUCTOR STORAGE DEVICE AND MANUFACTURING METHOD OF NON-VOLATILE SEMICONDUCTOR STORAGE DEVICE 失效
    非挥发性半导体存储器件非易失性存储器件的制造方法及非易失性半导体存储器件的制造方法

    公开(公告)号：US20120235109A1

    公开(公告)日：2012-09-20

    申请号：US13334848

    申请日：2011-12-22

    Applicant: Yasuhiro Nojiri

    Inventor： Yasuhiro Nojiri

    IPC: H01L45/00 ,  H01L21/62

    CPC classification number: H01L27/2409 ,  H01L27/101 ,  H01L27/2463 ,  H01L27/2481 ,  H01L45/04 ,  H01L45/1233

    Abstract: According to one embodiment, a memory cell includes a resistance change layer, an upper electrode layer, a lower electrode layer, a diode layer, a first oxide film, and a second oxide film. The upper electrode layer is arranged above the resistance change layer. The lower electrode layer is arranged below the resistance change layer. The diode layer is arranged above the upper electrode layer or below the lower electrode layer. The first oxide film exists on a side wall of at least one electrode layer of the upper electrode layer or the lower electrode layer. The second oxide film exists on a side wall of the diode layer. The film thickness of the first oxide film is thicker than a film thickness of the second oxide film.

    Abstract translation: 根据一个实施例，存储单元包括电阻变化层，上电极层，下电极层，二极管层，第一氧化物膜和第二氧化物膜。 上电极层配置在电阻变化层的上方。 下部电极层配置在电阻变化层的下方。 二极管层设置在上电极层的上方或下电极层的下方。 第一氧化膜存在于上电极层或下电极层的至少一个电极层的侧壁上。 第二氧化物膜存在于二极管层的侧壁上。 第一氧化膜的膜厚比第二氧化膜的膜厚厚。

    Nonvolatile memory device and information recording method
    8.
    发明授权
    Nonvolatile memory device and information recording method 有权
    非易失性存储器件和信息记录方法

    公开(公告)号：US08274816B2

    公开(公告)日：2012-09-25

    申请号：US13036667

    申请日：2011-02-28

    Applicant: Noriko Bota ,  Yasuhiro Nojiri ,  Hiroyuki Fukumizu ,  Takuya Konno ,  Kazuhito Nishitani

    Inventor： Noriko Bota ,  Yasuhiro Nojiri ,  Hiroyuki Fukumizu ,  Takuya Konno ,  Kazuhito Nishitani

    IPC: G11C11/00

    CPC classification number: G11C13/0007 ,  G11C2213/31 ,  G11C2213/72 ,  H01L27/2409 ,  H01L27/2481 ,  H01L45/04 ,  H01L45/1233 ,  H01L45/146 ,  H01L45/1625

    Abstract: According to one embodiment, a nonvolatile memory device includes a memory layer and a driver section. The memory layer has a first state having a first resistance under application of a first voltage, a second state having a second resistance higher than the first resistance under application of a second voltage higher than the first voltage, and a third state having a third resistance between the first resistance and the second resistance under application of a third voltage between the first voltage and the second voltage. The driver section is configured to apply at least one of the first voltage, the second voltage and the third voltage to the memory layer to record information in the memory layer.

    Abstract translation: 根据一个实施例，非易失性存储器件包括存储器层和驱动器部分。 存储层具有在施加第一电压的情况下具有第一电阻的第一状态，在施加高于第一电压的第二电压的情况下具有高于第一电阻的第二电阻的第二状态，以及具有第三电阻的第三状态 在第一电压和第二电压之间施加第三电压的第一电阻和第二电阻之间。 驱动器部分被配置为将第一电压，第二电压和第三电压中的至少一个施加到存储器层，以将信息记录在存储器层中。

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