公开(公告)号：US4082889A

公开(公告)日：1978-04-04

申请号：US652962

申请日：1976-01-28

Applicant: Thomas Herman DiStefano

Inventor： Thomas Herman DiStefano

IPC: C09K11/08 ,  H01J9/22 ,  H01J29/20 ,  H01J31/12 ,  B32B5/16

CPC classification number: C09K11/08 ,  H01J29/20 ,  H01J31/12 ,  H01J9/221 ,  Y10S148/12 ,  Y10S148/122 ,  Y10S148/15 ,  Y10S148/157 ,  Y10S438/922 ,  Y10T428/256 ,  Y10T428/2991

Abstract: This disclosure provides a polycrystalline semiconductor material which has a high luminous efficiency because of an especial profile of impurity concentration within each grain thereof. The regions immediately adjacent to the grain surfaces or grain boundaries are preferentially and selectively doped with impurity atoms to achieve a relatively high concentration of majority carriers of the same conductivity type as is in the grain center. As a result of the noted doping profile in the material, minority carriers which are excited within each grain by externally originated radiation are confined to the central portion of the grain where they emit electromagnetic radiation by efficient luminescent recombination. The material of this disclosure in polycrystalline thin film form obtains a high resolution screen for an electron beam optical display device.

公开(公告)号：US4079368A

公开(公告)日：1978-03-14

申请号：US687052

申请日：1976-05-17

Applicant: Thomas Herman DiStefano

Inventor： Thomas Herman DiStefano

IPC: H04N5/80 ,  G02B26/02 ,  G02B26/08 ,  G09F9/37 ,  G09G3/34 ,  G08B5/36 ,  G11C11/42

CPC classification number: G02B26/004 ,  G02B26/0816 ,  G09F9/37

Abstract: The practice of this invention provides display of information which utilizes the inherent characteristic of the displacement by an applied electric field intensity distribution of the interface between two fluid dielectric media which are operationally immiscible in each other and have different total dielectric properties at the interface. In particular, the information handling and display in the practice of this invention are with an optical display device in which the two dielectric media are immiscible liquids, e.g., oil and water. The local displacement of the interface therebetween is accomplished by the local application of an electric field which effects movement of the interface by electrohydrodynamic interaction with the dielectric media at the interface. An embodiment of the invention includes an electrode structure for applying an electric field intensity distribution so that the interface can be displaced locally and selectively and preferentially in accordance with a particular information pattern.

Abstract translation: 本发明的实践提供了通过在两个流体介电介质之间的界面的施加的电场强度分布来利用位移的固有特性的信息的显示，这两个介质介质在操作上彼此不混溶并且在界面处具有不同的总介电性质。 特别地，在本发明的实践中的信息处理和显示是具有光学显示装置，其中两个介电介质是不混溶的液体，例如油和水。 它们之间的界面的局部位移通过局部施加电场来实现，该电场通过与界面处的介电介质的电流动力学相互作用来实现界面的移动。 本发明的实施例包括用于施加电场强度分布的电极结构，使得界面可以根据特定信息图案被局部选择性地优先移位。

公开(公告)号：US4062038A

公开(公告)日：1977-12-06

申请号：US652961

申请日：1976-01-28

Applicant: Jerome John Cuomo ,  Thomas Herman DiStefano ,  Robert Rosenberg

Inventor： Jerome John Cuomo ,  Thomas Herman DiStefano ,  Robert Rosenberg

IPC: H01L31/04 ,  H01L31/0368 ,  H01L31/068 ,  H01L31/07 ,  H01L27/14

CPC classification number: H01L31/0368 ,  H01L31/03682 ,  H01L31/068 ,  H01L31/07 ,  Y02E10/546 ,  Y02E10/547 ,  Y10S148/128 ,  Y10S438/922

Abstract: The practice of this disclosure obtains a relatively high efficiency operation for a crystalline semiconductor solar cell containing various defects of the linear and planar types. Linear defects include screw dislocations as well as full and partial dislocations. Planar defects include twins, stacking faults, grain boundaries and surfaces. Such defects normally contain recombination centers at which electrons and holes generated in the semiconductor region recombine with loss to the external current of the charge carried thereby. Through application of the principles of this invention, especial dopant concentrations and conductivity regions are established in a finite region around the linear and planar defects so that electrons and holes which are generated in the semiconductor region by incident radiation are substantially collected for external current as consequence thereof.

Abstract translation: 本公开的实践获得了包含线性和平面类型的各种缺陷的晶体半导体太阳能电池的相对高效率的操作。 线性缺陷包括螺旋位错以及全部和部分位错。 平面缺陷包括双胞胎，堆垛层错，晶界和表面。 这样的缺陷通常包含复合中心，在半导体区域中产生的电子和空穴与由此携带的电荷的外部电流的损耗重新组合。 通过应用本发明的原理，在围绕线性和平面缺陷的有限区域内建立了特殊的掺杂剂浓度和导电性区域，使得通过入射辐射在半导体区域中产生的电子和空穴基本上被收集用于外部电流 其中。

公开(公告)号：US3992716A

公开(公告)日：1976-11-16

申请号：US472783

申请日：1974-05-23

Applicant: Thomas Herman DiStefano

Inventor： Thomas Herman DiStefano

IPC: G11C27/04 ,  H01L21/339 ,  H01L27/148 ,  H01L29/423 ,  H01L29/762 ,  H01L29/768 ,  H01L29/78 ,  H01P3/00

CPC classification number: H04N3/1575 ,  G11C27/04 ,  H01L27/14831 ,  H01L29/42396 ,  H01L29/76866

Abstract: A slow wave stripline is disposed on the surface of a semiconductor, sandwiched between insulating layers, and covered by a ground plane, to thus form a waveguide structure. The electric field created by a r.f., electromagnetic wave propagated along the stripline establishes potential inversion wells in the surface of the semiconductor which propagate smoothly along with the wave. Minority carriers may be injected into selected wells to propagate therewith, where the presence or absence of such minority carriers represents 1 or 0 in binary notation. Practical applications include recirculating shift registers, logic arrangements, delay line memories, and optical image sensing or generating devices. In the latter two applications a matrix is developed by intersecting a meandering stripline with heavily doped strips in the semiconductor surface to maintain potential well separation between the matrix rows.

Abstract translation: 缓慢波纹线布置在半导体的表面上，夹在绝缘层之间并被接地平面覆盖，从而形成波导结构。 由r.f.沿着带状线传播的电磁波产生的电场在半导体的表面中建立了与波一起平滑地传播的潜在的反转阱。 可以将少数载体注入所选择的阱中以与其一起传播，其中这种少数载流子的存在或不存在以二进制符号表示1或0。 实际应用包括循环移位寄存器，逻辑布置，延迟线存储器和光学图像感测或生成装置。 在后两种应用中，通过将蜿蜒带状线与半导体表面中的重掺杂带相交，以在矩阵行之间保持潜在的良好分离来开发矩阵。

公开(公告)号：US3972059A

公开(公告)日：1976-07-27

申请号：US429460

申请日：1973-12-28

Applicant: Thomas Herman DiStefano

Inventor： Thomas Herman DiStefano

IPC: H01L29/86 ,  G11C11/36 ,  G11C11/401 ,  G11C16/04 ,  G11C17/00 ,  G11C17/06 ,  H01L21/8247 ,  H01L29/788 ,  H01L29/792 ,  H01L29/861 ,  H01L29/92 ,  H01L29/94 ,  H01L45/00 ,  H03K3/356 ,  H01L49/02 ,  H01L29/12 ,  H01L29/34 ,  H01L29/88

CPC classification number: G11C13/0009 ,  G11C13/003 ,  G11C16/0408 ,  G11C16/0466 ,  H01L29/8616 ,  H01L29/94 ,  H01L45/00 ,  H03K3/356 ,  G11C2213/72

Abstract: A dielectric diode is provided in accordance with the principles of this invention. The dielectric diode is in the form of a capacitor wherein one of the electrodes has a high contact barrier, e.g., 4 electron-volts, and the other has a low contact barrier, e.g., 1 electron-volt, giving the resulting structure a diode behavior. Illustratively, the electrode at the low contact barrier comprises a valve metal or a very reactive metal which has been anodized or oxidized to provide a layer region with a given concentration of positive ions. The resulting metal oxide is covered with a wide band gap insulator such as SiO.sub.2. The composite contact barrier from the conductor to the insulator is typically less than 1 eV and results from the transition layer region between the conductor electrode and the insulator layer. The wide gap insulator layer is covered on the opposite surface with another electrode which has a high contact barrier. Electronic current will tunnel easily from the first electrode into the insulator layer via the composite contact barrier and then will be collected by the second electrode as a relatively large tunnel current. However, the tunnel current from the second electrode, through the insulator and to the first electrode is relatively quite small at electric fields less than 10.sup.6 volts/cm.A dielectric diode provided in accordance with the principles of this invention can be used to charge and discharge a capacitor, forming a memory cell. The charge on the memory capacitor can be sensed by a field effect transistor.

Abstract translation: 根据本发明的原理提供介质二极管。 电介质二极管是电容器的形式，其中一个电极具有高接触屏障，例如4个电子伏特，另一个具有低接触屏障，例如1个电子伏，给出所得结构二极管 行为。 示例性地，低接触屏障处的电极包括阀金属或非常活性的金属，其被阳极氧化或氧化以提供具有给定浓度的正离子的层区域。 所得到的金属氧化物被诸如SiO 2之类的宽带隙绝缘体覆盖。 从导体到绝缘体的复合接触屏障通常小于1eV，并且由导体电极和绝缘体层之间的过渡层区域产生。 宽间隙绝缘体层在具有高接触屏障的另一电极的相对表面上被覆盖。 电子电流将通过复合接触屏障从第一电极容易地隧穿到绝缘体层中，然后由第二电极作为较大的隧道电流进行收集。 然而，来自第二电极的隧道电流通过绝缘体和第一电极在小于106伏/厘米的电场下相对较小。