摘要:
A pattern dimension calculation method according to one embodiment calculates a taper shape of a mask member used as a mask when a circuit pattern is processed in an upper layer of the circuit pattern formed on a substrate. The method calculates an opening angle facing the mask member from a shape prediction position on the circuit pattern on the basis of the taper shape. The method calculates a dimension of the circuit pattern according to the opening angle formed at the shape prediction position.
摘要:
Pattern formation simulations are performed based on design layout data subjected to OPC processing with a plurality of process parameters set in process conditions. A worst condition of the process conditions is calculated based on risk points extracted from simulation results. The design layout data or the OPC processing is changed such that when a pattern is formed under the worst condition based on the changed design layout data or the changed OPC processing a number of the risk points or a risk degree of the risk points of the pattern is smaller than the simulation result.
摘要:
According to one embodiment, a mask pattern determining method includes a mask-pattern dimension variation amount of a first photomask is derived. Moreover, a correspondence relationship between a target dimension value of an on-substrate test pattern formed by using a second photomask and a dimension allowable variation amount of a mask pattern formed on the second photomask is derived. Then, it is determined whether pattern formation is possible with a pattern dimension that needs to be formed when performing the pattern formation on a substrate by using the first photomask based on the mask-pattern dimension variation amount and the correspondence relationship.
摘要:
A design layout data creating method includes creating design layout data of a semiconductor device such that patterns formed on a wafer when patterns corresponding to the design layout data are formed on the wafer have a pattern coverage ratio within a predetermined range in a wafer surface and total peripheral length of the patterns formed on the wafer when the patterns corresponding to the design layout are formed on the wafer is pattern peripheral length within a predetermined range.
摘要:
There is provided the rubber composition for a clinch apex keeping hardness constant, suppressing prevulcanization, reducing rolling resistance, improving processability, suppressing generation of chafing between the clinch apex and a rim and hardly causing slipping of the clinch apex on the rim. The rubber composition for a clinch apex comprises 55 to 75 parts by weight of carbon black and 1 to 5 parts by weight of para-benzoquinolinediimine based on 100 parts by weight of a rubber component comprising 10 to 50% by weight of a natural rubber and/or an isoprene rubber and 50 to 90% by weight of a butadiene rubber having a Mooney viscosity at 100° C. of 30 to 55 in an unvulcanized state, and the pneumatic tire has the clinch apex using the rubber composition.
摘要:
The invention provides a rubber composition that can enhance fuel economy, wet-grip performance, abrasion resistance, and handling stability in a balanced manner, and a pneumatic tire using this composition. The invention relates to a rubber composition containing a rubber component, silica (1) having a nitrogen adsorption specific surface area of not more than 100 m2/g, and silica (2) having a nitrogen adsorption specific surface area of at least 180 m2/g, wherein the rubber component contains, based on 100% by mass of the rubber component, at least 5% by mass of a conjugated diene polymer containing a constituent unit based on a conjugated diene and a constituent unit represented by formula (I) below, at least one terminal of the polymer being modified with a specific compound; and a total amount of silica (1) and silica (2) is 30-150 parts by mass per 100 parts by mass of the rubber component,
摘要:
The present invention provides a rubber composition that can enhance the fuel economy, wet-grip performance, and abrasion resistance in a balanced manner, and a pneumatic tire using this rubber composition. The present invention relates to a rubber composition that contains a rubber component, silica, and a silane coupling agent, wherein the rubber component contains, based on 100% by mass of the rubber component, not less than 5% by mass of a conjugated diene polymer containing a constituent unit based on a conjugated diene and a constituent unit represented by formula (I) below, at least one terminal of the polymer being modified with a specific compound; an amount of the silica is 5 to 150 parts by mass per 100 parts by mass of the rubber component; and the silane coupling agent contains a mercapto group.
摘要:
The present invention provides a rubber composition for a tread which enables improvement in fuel economy, breaking performance, and abrasion resistance in a balanced manner; a method for producing the rubber composition; and a heavy-load tire. The present invention relates to a rubber composition for a tread of a heavy-load tire, including a modified natural rubber having a phosphorus content of 200 ppm or less, and carbon black.
摘要:
According to one embodiment, a semiconductor device includes a plurality of first interconnects, a second interconnect, a third interconnect, and a plurality of conductive members. The plurality of first interconnects are arranged periodically to extend in one direction. The second interconnect is disposed outside a group of the plurality of first interconnects to extend in the one direction. The third interconnect is provided between the group and the second interconnect. The plurality of conductive members are disposed on a side opposite to the group as viewed from the second interconnect. A shortest distance between the first interconnect and the third interconnect, a shortest distance between the third interconnect and the second interconnect, and a shortest distance between the first interconnects are equal. A shortest distance between the second interconnect and the conductive member is longer than the shortest distance between the first interconnects.
摘要:
According to one embodiment, a semiconductor device includes interconnects extending from a element formation area to the drawing area, and connected with semiconductor elements in the element formation area and connected with contacts in the drawing area. The interconnects are formed based on a pattern of a (n+1)th second sidewall film matching a pattern of a nth (where n is an integer of 1 or more) first sidewall film on a lateral surface of a sacrificial layer. A first dimension matching an interconnect width of the interconnects and an interconnects interval in the element formation area is (k1/2n)×(λ/NA) or less when an exposure wavelength of an exposure device is λ, a numerical aperture of a lens of the exposure device is NA and a process parameter is k1. A second dimension matching an interconnect interval in the drawing area is greater than the first dimension.