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1.发明授权公开(公告)号：US08758981B2
公开(公告)日：2014-06-24
申请号：US13540111
申请日：2012-07-02
申请人： Mi-Young Kim , Sang-Kyun Kim , Hyeon-Mo Cho , Chang-Soo Woo , Sang-Ran Koh , Hui-Chan Yun , Woo-Jin Lee , Jong-Seob Kim
发明人： Mi-Young Kim , Sang-Kyun Kim , Hyeon-Mo Cho , Chang-Soo Woo , Sang-Ran Koh , Hui-Chan Yun , Woo-Jin Lee , Jong-Seob Kim
CPC分类号： G03F7/0752 , G03F7/09 , G03F7/11
摘要： A photoresist underlayer composition includes a solvent, and a polysiloxane resin represented by Chemical Formula 1: {(SiO1.5—Y—SiO1.5)x(SiO2)y(XSiO1.5)z}(OH)e(OR1)f. [Chemical Formula 1]
摘要翻译： 光致抗蚀剂底层组合物包括溶剂和由化学式1表示的聚硅氧烷树脂：{（SiO 1.5-Y-SiO 1.5）x（SiO 2）y（XSiO 1.5）z}（OH）e（OR 1）f 。 [化学式1]
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2.发明授权Resin composition for transparent encapsulation material and electronic device formed using the same 有权用于透明封装材料的树脂组合物和使用其形成的电子器件公开(公告)号：US08455605B2
公开(公告)日：2013-06-04
申请号：US13535673
申请日：2012-06-28
申请人： Sang-Ran Koh , June-Ho Shin , Hyun-Jung Ahn , Sung-Hwan Cha , Young-Eun Choi , Doo-Young Jung , Sang-Kyun Kim , Jong-Seob Kim
发明人： Sang-Ran Koh , June-Ho Shin , Hyun-Jung Ahn , Sung-Hwan Cha , Young-Eun Choi , Doo-Young Jung , Sang-Kyun Kim , Jong-Seob Kim
IPC分类号： C08G77/60
摘要： A resin composition for a transparent encapsulation material, the resin composition including a polysiloxane obtained by copolymerization of a first silicon compound represented by the following Chemical Formula 1 and a second silicon compound including a compound represented by the following Chemical Formula 2,
摘要翻译： 一种透明包封材料用树脂组合物，该树脂组合物含有通过由下述化学式1表示的第一硅化合物的共聚合得到的聚硅氧烷和包含由下述化学式2表示的化合物的第二硅化合物，
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3.发明申请RESIST UNDERLAYER COMPOSITION AND METHOD OF MANUFACTURING SEMICONDUCTOR INTEGRATED CIRCUIT DEVICES USING THE SAME 审中-公开耐蚀组合物及使用其制造半导体集成电路器件的方法公开(公告)号：US20120270143A1
公开(公告)日：2012-10-25
申请号：US13539894
申请日：2012-07-02
申请人： Hui-Chan YUN , Sang-Kyun KIM , Hyeon-Mo CHO , Mi-Young KIM , Sang-Ran KOH , Yong-Jin CHUNG , Jong-Seob KIM
发明人： Hui-Chan YUN , Sang-Kyun KIM , Hyeon-Mo CHO , Mi-Young KIM , Sang-Ran KOH , Yong-Jin CHUNG , Jong-Seob KIM
IPC分类号： C08L83/04 , G03F7/20 , B32B3/30 , C08K5/3432
CPC分类号： G03F7/0752 , G03F7/094 , G03F7/11
摘要： A resist underlayer composition, including a solvent, and an organosilane condensation polymerization product including about 10 to about 40 mol % of a structural unit represented by Chemical Formula 1:
摘要翻译： 包括溶剂的抗蚀剂底层组合物和包含由化学式1表示的结构单元的约10至约40mol％的有机硅烷缩聚产物：
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4.发明授权Resist underlayer composition and process of producing integrated circuit devices using the same 有权抗蚀底层组合物和使用其制造集成电路器件的工艺公开(公告)号：US09140986B2
公开(公告)日：2015-09-22
申请号：US13539760
申请日：2012-07-02
申请人： Mi-Young Kim , Sang-Kyun Kim , Hyeon-Mo Cho , Sang-Ran Koh , Hui-Chan Yun , Yong-Jin Chung , Jong-Seob Kim
发明人： Mi-Young Kim , Sang-Kyun Kim , Hyeon-Mo Cho , Sang-Ran Koh , Hui-Chan Yun , Yong-Jin Chung , Jong-Seob Kim
IPC分类号： C08G77/08 , G03F7/075 , G03F7/11 , H01L21/02 , H01L21/033 , C08L83/04 , C08G77/16 , C08G77/18 , C08L83/06
CPC分类号： G03F7/0752 , C08G77/16 , C08G77/18 , C08L83/04 , C08L83/06 , G03F7/11 , H01L21/02126 , H01L21/02216 , H01L21/02282 , H01L21/0332
摘要： A resist underlayer composition includes a solvent and an organosilane condensation polymerization product, the organosilane condensation polymerization product including about 40 to about 80 mol % of a structural unit represented by the following Chemical Formula 1,
摘要翻译： 抗蚀剂底层组合物包括溶剂和有机硅烷缩聚产物，所述有机硅烷缩聚产物包含约40至约80mol％的由以下化学式1表示的结构单元，
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5.发明申请公开(公告)号：US20120282776A1
公开(公告)日：2012-11-08
申请号：US13540111
申请日：2012-07-02
申请人： Mi-Young KIM , Sang-Kyun KIM , Hyeon-Mo CHO , Chang-Soo WOO , Sang-Ran KOH , Hui-Chan YUN , Woo-Jin LEE , Jong-Seob KIM
发明人： Mi-Young KIM , Sang-Kyun KIM , Hyeon-Mo CHO , Chang-Soo WOO , Sang-Ran KOH , Hui-Chan YUN , Woo-Jin LEE , Jong-Seob KIM
IPC分类号： C09D183/06 , H01L21/311
CPC分类号： G03F7/0752 , G03F7/09 , G03F7/11
摘要： A photoresist underlayer composition includes a solvent, and a polysiloxane resin represented by Chemical Formula 1: {(SiO1.5—Y—SiO1.5)(SiO2)y(XSiO1.5)z}(OH)e(OR1)f. [Chemical Formula 1]
摘要翻译： 光致抗蚀剂底层组合物包括溶剂和由化学式1表示的聚硅氧烷树脂：{（SiO 1.5-Y-SiO 1.5）（SiO 2）y（XSiO 1.5）z}（OH）e（OR 1）f。 [化学式1]
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6.发明申请RESIST UNDERLAYER COMPOSITION AND PROCESS OF PRODUCING INTEGRATED CIRCUIT DEVICES USING THE SAME 有权使用相同的底层组合物和制造集成电路装置的方法公开(公告)号：US20120267766A1
公开(公告)日：2012-10-25
申请号：US13539760
申请日：2012-07-02
申请人： Mi-Young KIM , Sang-Kyun KIM , Hyeon-Mo CHO , Sang-Ran KOH , Hui-Chan YUN , Yong-Jin CHUNG , Jong-Seob KIM
发明人： Mi-Young KIM , Sang-Kyun KIM , Hyeon-Mo CHO , Sang-Ran KOH , Hui-Chan YUN , Yong-Jin CHUNG , Jong-Seob KIM
IPC分类号： C08K5/101 , H01L21/31 , H01L29/02 , C08K5/3432
CPC分类号： G03F7/0752 , C08G77/16 , C08G77/18 , C08L83/04 , C08L83/06 , G03F7/11 , H01L21/02126 , H01L21/02216 , H01L21/02282 , H01L21/0332
摘要： A resist underlayer composition includes a solvent and an organosilane condensation polymerization product, the organosilane condensation polymerization product including about 40 to about 80 mol % of a structural unit represented by the following Chemical Formula 1,
摘要翻译： 抗蚀剂底层组合物包括溶剂和有机硅烷缩聚产物，所述有机硅烷缩聚产物包含约40至约80mol％的由以下化学式1表示的结构单元，
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公开(公告)号：US20120168815A1
公开(公告)日：2012-07-05
申请号：US13338549
申请日：2011-12-28
申请人： Sang-Ran Koh , Yong Kook Kim , Woo-Han Kim , Ha Neul Kim , Chi Won An , Sung-Hwan Cha
发明人： Sang-Ran Koh , Yong Kook Kim , Woo-Han Kim , Ha Neul Kim , Chi Won An , Sung-Hwan Cha
CPC分类号： H01L33/501 , C08G77/12 , C08G77/20 , C08K5/5435 , C08L83/04 , H01L27/322 , H01L33/56 , H01L51/5253 , H01L2224/48091 , H01L2924/12044 , H01L2924/00014 , H01L2924/00
摘要： An encapsulation material and an electronic device, the encapsulation material including a resin, the resin including a first polysiloxane including hydrogen bonded with silicon (Si—H) at a terminal end thereof, and a second polysiloxane including an alkenyl group bonded with silicon (Si-Vi) at a terminal end thereof, a phosphor, and a density controlling agent, wherein a weight ratio of the density controlling agent to the phosphor is about 1.5:1 to about 10:1.
摘要翻译： 一种封装材料和电子器件，该封装材料包括树脂，该树脂包括在其末端包含与硅（Si-H）键合的氢的第一聚硅氧烷和包含与硅键合的第二聚硅氧烷（Si -Vi），荧光体和密度控制剂，其中密度控制剂与荧光体的重量比为约1.5：1至约10：1。
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8.发明申请HARDMASK COMPOSITION FOR FORMING RESIST UNDERLAYER FILM, PROCESS FOR PRODUCING A SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE, AND SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE 审中-公开用于形成电阻膜的HARDMASK组合物，用于制造半导体集成电路器件的工艺和半导体集成电路器件公开(公告)号：US20110241175A1
公开(公告)日：2011-10-06
申请号：US13160544
申请日：2011-06-15
申请人： Sang Ran KOH , Sang Kyun KIM , Sang Hak LIM , Mi Young KIM , Hui Chan YUN , Do Hyeon KIM , Dong Seon UH , Jong Seob KIM
发明人： Sang Ran KOH , Sang Kyun KIM , Sang Hak LIM , Mi Young KIM , Hui Chan YUN , Do Hyeon KIM , Dong Seon UH , Jong Seob KIM
CPC分类号： G03F7/0752 , C08G77/18 , C08L83/04 , C09D183/04 , H01L21/02126 , H01L21/02216 , H01L21/02282 , H01L21/0332
摘要： A hardmask composition for forming a resist underlayer film, a process for producing a semiconductor integrated circuit device, and a semiconductor integrated circuit device, the hardmask composition including an organosilane polymer, and a stabilizer, the stabilizer including one of acetic anhydride, methyl acetoacetate, propionic anhydride, ethyl-2-ethylacetoacetate, butyric anhydride, ethyl-2-ethylacetoacetate, valeric anhydride, 2-methylbutyric anhydride, nonanol, decanol, undecanol, dodecanol, propylene glycol propyl ether, propylene glycol ethyl ether, propylene glycol methyl ether, propylene glycol, phenyltrimethoxysilane, diphenylhexamethoxydisiloxane, diphenylhexaethoxydisiloxane, dioctyltetramethyldisiloxane, hexamethyltrisiloxane, tetramethyldisiloxane, decamethyltetrasiloxane, dodecamethylpentasiloxane, hexamethyldisiloxane, and mixtures thereof.
摘要翻译： 用于形成抗蚀剂下层膜的硬掩模组合物，半导体集成电路器件的制造方法和半导体集成电路器件，所述硬掩模组合物包含有机硅烷聚合物和稳定剂，所述稳定剂包括乙酸酐，乙酰乙酸甲酯， 丙酸酐，2-乙基乙酰乙酸乙酯，丁酸酐，2-乙基乙酰乙酸乙酯，戊酸酐，2-甲基丁酸酐，壬醇，癸醇，十一烷醇，十二烷醇，丙二醇丙醚，丙二醇乙醚，丙二醇甲醚，丙烯 乙二醇，苯基三甲氧基硅烷，二苯基六甲氧基二硅氧烷，二苯基六乙氧基二硅氧烷，二辛基四甲基二硅氧烷，六甲基三硅氧烷，四甲基二硅氧烷，十甲基四硅氧烷，十二甲基五硅氧烷，六甲基二硅氧烷及其混合物。
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9.发明申请Silicon-based hardmask composition and process of producing semiconductor integrated circuit device using the same 有权基于硅的硬掩模组成和使用其的半导体集成电路器件的制造工艺公开(公告)号：US20100279509A1
公开(公告)日：2010-11-04
申请号：US12805081
申请日：2010-07-12
申请人： Sang Kyun Kim , Hyeon Mo Cho , Sang Ran Koh , Mi Young Kim , Hui Chan Yun , Yong Jin Chung , Jong Seob Kim
发明人： Sang Kyun Kim , Hyeon Mo Cho , Sang Ran Koh , Mi Young Kim , Hui Chan Yun , Yong Jin Chung , Jong Seob Kim
IPC分类号： H01L21/306 , C08L83/06
CPC分类号： H01L21/31144 , C08G77/16 , C08G77/50 , C08G77/52 , C08G77/70 , H01L21/02126 , H01L21/02216 , H01L21/02282 , H01L21/0332 , H01L21/3081 , H01L21/3122 , H01L21/32139
摘要： A silicon-based hardmask composition, including an organosilane polymer represented by Formula 1: {(SiO1.5—Y—SiO1.5)x(R3SiO1.5)y(XSiO1.5)z}(OH)e(OR6)f (1).
摘要翻译： 一种硅基硬掩模组合物，包括由式1表示的有机硅烷聚合物：{（SiO 1.5-Y-SiO 1.5）x（R 3 SiO 1.5）y（XSiO 1.5）z}（OH）e（OR 6）f （1）。
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10.发明授权Resist underlayer composition and method of manufacturing semiconductor integrated circuit device using the same 有权抗蚀剂底层组合物和使用其制造半导体集成电路器件的方法公开(公告)号：US09291899B2
公开(公告)日：2016-03-22
申请号：US12654737
申请日：2009-12-30
申请人： Hyeon-Mo Cho , Sang-Kyun Kim , Chang-Soo Woo , Mi-Young Kim , Sang-Ran Koh , Hui-Chan Yun , Woo-Jin Lee , Jong-Seob Kim
发明人： Hyeon-Mo Cho , Sang-Kyun Kim , Chang-Soo Woo , Mi-Young Kim , Sang-Ran Koh , Hui-Chan Yun , Woo-Jin Lee , Jong-Seob Kim
IPC分类号： G03F7/075 , G03F7/09 , G03F7/11 , G03F7/30 , G03F7/36 , C08G77/50 , C08G77/52 , C08K5/00 , C08L83/04 , C08L83/14 , C09D183/04 , C09D183/14 , C08G77/12 , C08G77/14 , C08G77/16 , C08G77/18 , C08G77/20 , C08G77/24 , C08G77/26 , C08G77/00
CPC分类号： G03F7/0752 , C08G77/12 , C08G77/14 , C08G77/16 , C08G77/18 , C08G77/20 , C08G77/24 , C08G77/26 , C08G77/50 , C08G77/52 , C08G77/70 , C08K5/0008 , C08L83/04 , C08L83/14 , C09D183/04 , C09D183/14 , G03F7/0757 , G03F7/09 , G03F7/091 , G03F7/094 , G03F7/11 , G03F7/30 , G03F7/36
摘要： A resist underlayer composition and a method of manufacturing a semiconductor integrated circuit device, the composition including a solvent and an organosilane polymer, the organosilane polymer being a condensation polymerization product of at least one first compound represented by Chemical Formulae 1 and 2 and at least one second compound represented by Chemical Formulae 3 to 5.
摘要翻译： 抗蚀剂下层组合物和半导体集成电路器件的制造方法，所述组合物包括溶剂和有机硅烷聚合物，所述有机硅烷聚合物是至少一种由化学式1和2表示的第一化合物的缩聚产物和至少一种 化学式3〜5表示的第二化合物。
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