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    Apparatus and method of encoding and decoding signals
    2.
    发明授权
    Apparatus and method of encoding and decoding signals 有权
    信号编码和解码的装置和方法

    公开(公告)号：US08428958B2

    公开(公告)日：2013-04-23

    申请号：US12246570

    申请日：2008-10-07

    Applicant: Ho-sang Sung ,  Eun-mi Oh ,  Jung-hoe Kim ,  Ki-hyun Choo ,  Mi-young Kim

    Inventor： Ho-sang Sung ,  Eun-mi Oh ,  Jung-hoe Kim ,  Ki-hyun Choo ,  Mi-young Kim

    IPC: G10L19/00

    CPC classification number: G10L19/002 ,  G10L19/00 ,  G10L19/18

    Abstract: A method of encoding an audio signal, where signals including two or more channel signals are downmixed to a mono signal, the mono signal is divided into a low-frequency signal and a high-frequency signal, the low-frequency signal is encoded through algebraic code excited linear prediction (ACELP) or transform coded excitation (TCX), and the high-frequency signal is encoded using the low-frequency signal. A method of decoding of an audio signal, a low-frequency signal encoded through ACELP or TCX is decoded, a high-frequency signal is decoded using the low-frequency signal, the low-frequency signal and the high-frequency signal are combined to generate a mono signal, and the mono signal is upmixed by decoding spatial parameters regarding signals including two or more channel signals.

    Abstract translation: 一种编码音频信号的方法，其中包括两个或更多个信道信号的信号被下混合到单声道信号，单声道信号被分为低频信号和高频信号，低频信号通过代数 代码激励线性预测（ACELP）或变换编码激励（TCX），并且使用低频信号对高频信号进行编码。 解码音频信号的方法，通过ACELP或TCX编码的低频信号进行解码，使用低频信号对低频信号进行解码，将低频信号和高频信号合成为 产生单声道信号，并且单声道信号通过解码关于包括两个或更多个声道信号的信号的空间参数来混合。

    APPARATUS AND METHOD FOR BANDWIDTH EXTENSION FOR MULTI-CHANNEL AUDIO
    4.
    发明申请
    APPARATUS AND METHOD FOR BANDWIDTH EXTENSION FOR MULTI-CHANNEL AUDIO 有权
    多通道音频带宽扩展的装置和方法

    公开(公告)号：US20120070007A1

    公开(公告)日：2012-03-22

    申请号：US13232696

    申请日：2011-09-14

    Applicant: Mi Young KIM ,  Ki Hyun CHOO ,  Eun Mi OH ,  Boris KUDRYASHOV ,  Kirill YURKOV

    Inventor： Mi Young KIM ,  Ki Hyun CHOO ,  Eun Mi OH ,  Boris KUDRYASHOV ,  Kirill YURKOV

    IPC: H04R5/00

    CPC classification number: H04S3/008 ,  G10L19/008 ,  G10L21/038 ,  H04S2400/03 ,  H04S2420/03 ,  H04S2420/07

    Abstract: A method and apparatus of effectively encoding and decoding a high-frequency signal of a multi-channel audio are provided. A multi-channel audio decoding apparatus may down-mix a multi-channel audio input signal, expand a number of channels of the down-mixed signal, select at least one of the expanded channel signal, extract a parameter indicating a characteristic relation between the selected signal and the multi-channel audio input signal, and encode the down-mixed signal and the extracted parameter.

    Abstract translation: 提供了一种有效地对多声道音频的高频信号进行编码和解码的方法和装置。 多声道音频解码装置可以对多声道音频输入信号进行降混，扩大下混合信号的信道数，选择扩展信道信号中的至少一个，提取表示该信道的特征关系的参数 选择信号和多声道音频输入信号，并对下混合信号和提取的参数进行编码。

    SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
    6.
    发明申请
    SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME 有权
    半导体器件及其制造方法

    公开(公告)号：US20100163992A1

    公开(公告)日：2010-07-01

    申请号：US12647506

    申请日：2009-12-27

    Applicant: Mi-Young Kim

    Inventor： Mi-Young Kim

    IPC: H01L29/78 ,  H01L21/336

    CPC classification number: H01L29/7816 ,  H01L29/04 ,  H01L29/0653 ,  H01L29/0873 ,  H01L29/0882 ,  H01L29/0886 ,  H01L29/66689

    Abstract: A semiconductor device includes a high voltage first conduction type well in a semiconductor substrate, a second conduction type body in the high voltage first conduction type well, a source region in the second conduction type body, a trench in the high voltage first conduction type well, a first isolation oxide, an impurity doped polysilicon film, and a second isolation oxide stacked in the trench in succession, a drain region in the high voltage first conduction type well on one side of the trench, and a polygate on and/or over the high voltage first conduction type well.

    Abstract translation: 半导体器件包括半导体衬底中的高电压第一导电型阱，高压第一导电型阱中的第二导电型体，第二导​​电型体中的源极区，高压第一导电型阱中的沟槽 ，第一隔离氧化物，掺杂杂质的多晶硅膜和第二隔离氧化物，其间依次层叠在沟槽的一侧的高压第一导电型阱中的漏极区域和在该沟槽的一侧上的多晶硅栅极 高压第一导电型井。

    SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
    9.
    发明申请
    SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME 失效
    半导体器件及其制造方法

    公开(公告)号：US20080149979A1

    公开(公告)日：2008-06-26

    申请号：US11960201

    申请日：2007-12-19

    Applicant: Mi Young Kim

    Inventor： Mi Young Kim

    IPC: H01L27/108 ,  H01L21/8242

    CPC classification number: H01L27/0629 ,  H01L28/40

    Abstract: A method for fabricating a semiconductor device having a capacitor is provided. The method includes forming an isolation layer on a substrate on which a capacitor region and a transistor region are defined, forming a trench in the isolation layer, sequentially forming a first polysilicon layer, a dielectric layer, and a second polysilicon layer on an entire surface of the substrate including the trench, forming a capacitor in the trench by performing a chemical mechanical polishing process until an upper surface of the isolation layer is exposed, forming a first photoresist pattern to expose the transistor region, removing the second polysilicon layer and the dielectric layer using the first photoresist pattern as a mask, forming a second photoresist pattern in the transistor region, and forming a gate electrode by selectively removing the first polysilicon layer in the transistor region using the second photoresist pattern as a mask.

    Abstract translation: 提供一种制造具有电容器的半导体器件的方法。 该方法包括在其上限定了电容器区域和晶体管区域的衬底上形成隔离层，在隔离层中形成沟槽，在整个表面上依次形成第一多晶硅层，电介质层和第二多晶硅层 包括沟槽的衬底，通过执行化学机械抛光工艺在沟槽中形成电容器，直到隔离层的上表面露出，形成第一光致抗蚀剂图案以暴露晶体管区域，去除第二多晶硅层和电介质 使用第一光致抗蚀剂图案作为掩模，在晶体管区域中形成第二光致抗蚀剂图案，并且通过使用第二光致抗蚀剂图案作为掩模选择性地去除晶体管区域中的第一多晶硅层来形成栅电极。

    Semiconductor memory device having repeaters located at the global input/output line
    10.
    发明授权
    Semiconductor memory device having repeaters located at the global input/output line 有权
    具有位于全局输入/输出线路上的中继器的半导体存储器件

    公开(公告)号：US07206213B2

    公开(公告)日：2007-04-17

    申请号：US10329631

    申请日：2002-12-26

    Applicant: Mi Young Kim

    Inventor： Mi Young Kim

    IPC: G11C5/06 ,  G11C7/00

    CPC classification number: G11C7/1069 ,  G11C7/1048 ,  G11C7/1051 ,  G11C7/1078 ,  G11C7/1096

    Abstract: A semiconductor memory device includes a repeater located at a global input/output (GIO) line. The repeater buffers and transmits data between a data pad and a plurality of banks. The semiconductor memory device also includes a repeater control unit adapted to control the operation of the repeater in response to a read/write command associated with one of the plurality of banks. When a read or write operation is performed for the banks located farthest from the data pads, the repeater on the GIO line buffers the GIO signal, and thereby reduces the load of the GIO line, decreases the delay of the GIO signal, and improves the slope of the GIO signal. As a result, the semiconductor memory device is useful during high speed operations.

    Abstract translation: 半导体存储器件包括位于全局输入/输出（GIO）线路上的中继器。 中继器缓冲并在数据块和多个存储体之间传输数据。 半导体存储器件还包括中继器控制单元，其适于响应于与多个存储体之一相关联的读/写命令来控制中继器的操作。 当对距离数据焊盘最远的组进行读或写操作时，GIO线上的转发器缓冲GIO信号，从而减少GIO线的负载，减少GIO信号的延迟，并改善 GIO信号的斜率。 结果，半导体存储器件在高速操作期间是有用的。

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