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    Methods of fabricating a semiconductor device using an organic compound and fluoride-based buffered solution
    2.
    发明授权
    Methods of fabricating a semiconductor device using an organic compound and fluoride-based buffered solution 失效
    使用有机化合物和基于氟化物的缓冲溶液制造半导体器件的方法

    公开(公告)号：US07365021B2

    公开(公告)日：2008-04-29

    申请号：US11122881

    申请日：2005-05-05

    Applicant: Mi-Young Kim ,  Sang-Cheol Han ,  Tai-Hyoung Kim ,  Jeong-Wook Hwang ,  Hong-Seong Son

    Inventor： Mi-Young Kim ,  Sang-Cheol Han ,  Tai-Hyoung Kim ,  Jeong-Wook Hwang ,  Hong-Seong Son

    IPC: H01L21/00

    CPC classification number: H01L21/76808 ,  H01L21/31111 ,  H01L21/31144 ,  H01L21/76829 ,  H01L21/76835

    Abstract: Methods are provided for fabricating a semiconductor device that include the steps of: sequentially forming a metal interconnection and a protecting layer on a semiconductor substrate; forming a contact hole on the protecting layer; isolating the contact hole by forming a molding layer and an etching stop layer stacked thereon; forming a sacrificial layer on the etching stop layer so as to fill the contact hole; forming a photoresist layer with an opening so as to expose the sacrificial layer and such that the opening of the photoresist layer aligns with the contact hole; forming a trench in the molding layer to penetrate the sacrificial layer and the etching stop layer; and performing a wet etching on the semiconductor substrate having the trench to remove the photoresist layer and the sacrificial layer, wherein the wet etching step is performed using an organic compound and fluoride ion-based buffered solution.

    Abstract translation: 提供了用于制造半导体器件的方法，其包括以下步骤：在半导体衬底上依次形成金属互连和保护层; 在保护层上形成接触孔; 通过形成层叠在其上的成型层和蚀刻停止层来隔离接触孔; 在所述蚀刻停止层上形成牺牲层以填充所述接触孔; 形成具有开口的光致抗蚀剂层以暴露所述牺牲层，并且使得所述光致抗蚀剂层的开口与所述接触孔对齐; 在模制层中形成沟槽以穿透牺牲层和蚀刻停止层; 以及对具有沟槽的半导体衬底进行湿式蚀刻以去除光致抗蚀剂层和牺牲层，其中使用有机化合物和基于氟化物离子的缓冲溶液进行湿蚀刻步骤。

    Methods of fabricating a semiconductor device using an organic compound and fluoride-based buffered solution
    4.
    发明申请
    Methods of fabricating a semiconductor device using an organic compound and fluoride-based buffered solution 失效
    使用有机化合物和基于氟化物的缓冲溶液制造半导体器件的方法

    公开(公告)号：US20050260856A1

    公开(公告)日：2005-11-24

    申请号：US11122881

    申请日：2005-05-05

    Applicant: Mi-Young Kim ,  Sang-Cheol Han ,  Tai-Hyoung Kim ,  Jeong-Wook Hwang ,  Hong-Seong Son

    Inventor： Mi-Young Kim ,  Sang-Cheol Han ,  Tai-Hyoung Kim ,  Jeong-Wook Hwang ,  Hong-Seong Son

    IPC: H01L21/306 ,  H01L21/311 ,  H01L21/4763 ,  H01L21/768

    CPC classification number: H01L21/76808 ,  H01L21/31111 ,  H01L21/31144 ,  H01L21/76829 ,  H01L21/76835

    Abstract: Methods are provided for fabricating a semiconductor device that include the steps of: sequentially forming a metal interconnection and a protecting layer on a semiconductor substrate; forming a contact hole on the protecting layer; isolating the contact hole by forming a molding layer and an etching stop layer stacked thereon; forming a sacrificial layer on the etching stop layer so as to fill the contact hole; forming a photoresist layer with an opening so as to expose the sacrificial layer and such that the opening of the photoresist layer aligns with the contact hole; forming a trench in the molding layer to penetrate the sacrificial layer and the etching stop layer; and performing a wet etching on the semiconductor substrate having the trench to remove the photoresist layer and the sacrificial layer, wherein the wet etching step is performed using an organic compound and fluoride ion-based buffered solution.

    Abstract translation: 提供了用于制造半导体器件的方法，其包括以下步骤：在半导体衬底上依次形成金属互连和保护层; 在保护层上形成接触孔; 通过形成层叠在其上的成型层和蚀刻停止层来隔离接触孔; 在所述蚀刻停止层上形成牺牲层以填充所述接触孔; 形成具有开口的光致抗蚀剂层以暴露所述牺牲层，并且使得所述光致抗蚀剂层的开口与所述接触孔对齐; 在模制层中形成沟槽以穿透牺牲层和蚀刻停止层; 以及对具有沟槽的半导体衬底进行湿式蚀刻以去除光致抗蚀剂层和牺牲层，其中使用有机化合物和基于氟化物离子的缓冲溶液进行湿蚀刻步骤。

    Apparatus and method for encoding and decoding spatial parameter
    5.
    发明授权
    Apparatus and method for encoding and decoding spatial parameter 有权
    空间参数编码和解码的装置和方法

    公开(公告)号：US09071919B2

    公开(公告)日：2015-06-30

    申请号：US13271792

    申请日：2011-10-12

    Applicant: Hwan Shim ,  Eun-Mi Oh ,  Mi-Young Kim ,  Anton V. Porov

    Inventor： Hwan Shim ,  Eun-Mi Oh ,  Mi-Young Kim ,  Anton V. Porov

    IPC: H04R5/00 ,  H04S1/00

    CPC classification number: H04S1/007 ,  H04S2400/03 ,  H04S2420/03

    Abstract: An apparatus and method for encoding and decoding a spatial parameter are provided. A spatial parameter encoding apparatus may encode a spatial parameter using a correlation between spatial parameters indicating a characteristic relationship between channels of a multi-channel audio signal, so that the multi-channel audio signal may be efficiently encoded.

    Abstract translation: 提供了一种用于编码和解码空间参数的装置和方法。 空间参数编码装置可以使用指示多声道音频信号的声道之间的特性关系的空间参数之间的相关来对空间参数进行编码，从而可以有效地编码多声道音频信号。

    Semiconductor device and method for fabricating the same
    9.
    发明授权
    Semiconductor device and method for fabricating the same 有权
    半导体装置及其制造方法

    公开(公告)号：US08084817B2

    公开(公告)日：2011-12-27

    申请号：US12647506

    申请日：2009-12-27

    Applicant: Mi-Young Kim

    Inventor： Mi-Young Kim

    IPC: H01L29/78 ,  H01L21/336

    CPC classification number: H01L29/7816 ,  H01L29/04 ,  H01L29/0653 ,  H01L29/0873 ,  H01L29/0882 ,  H01L29/0886 ,  H01L29/66689

    Abstract: A semiconductor device includes a high voltage first conduction type well in a semiconductor substrate, a second conduction type body in the high voltage first conduction type well, a source region in the second conduction type body, a trench in the high voltage first conduction type well, a first isolation oxide, an impurity doped polysilicon film, and a second isolation oxide stacked in the trench in succession, a drain region in the high voltage first conduction type well on one side of the trench, and a polygate on and/or over the high voltage first conduction type well.

    Abstract translation: 半导体器件包括半导体衬底中的高电压第一导电型阱，高压第一导电型阱中的第二导电型体，第二导​​电型体中的源极区，高压第一导电型阱中的沟槽 ，第一隔离氧化物，掺杂杂质的多晶硅膜和第二隔离氧化物，其间依次层叠在沟槽的一侧的高压第一导电型阱中的漏极区域和在该沟槽的一侧上的多晶硅栅极 高压第一导电型井。

    APPARATUS AND METHOD OF AUDIO ENCODING AND DECODING BASED ON VARIABLE BIT RATE
    10.
    发明申请
    APPARATUS AND METHOD OF AUDIO ENCODING AND DECODING BASED ON VARIABLE BIT RATE 审中-公开
    基于可变比特率的音频编码和解码的装置和方法

    公开(公告)号：US20100268542A1

    公开(公告)日：2010-10-21

    申请号：US12762630

    申请日：2010-04-19

    Applicant: Mi-Young Kim ,  Ho-Sang Sung ,  Eun-Mi Oh

    Inventor： Mi-Young Kim ,  Ho-Sang Sung ,  Eun-Mi Oh

    IPC: G10L19/04

    CPC classification number: G10L19/22

    Abstract: An apparatus and method of audio encoding and decoding based on a Variable Bit Rate (VBR) is provided. The audio encoding and decoding apparatus and method may determine an optimum bit rate per superframe and per frame, determine an optimum encoding mode by applying an open-loop mode/closed-loop mode based on a characteristic of an audio signal, and perform indexing based on the optimum encoding mode.

    Abstract translation: 提供了一种基于可变比特率（VBR）的音频编码和解码的装置和方法。 音频编码和解码装置和方法可以确定每个超帧和每帧的最佳比特率，通过基于音频信号的特性应用开环模式/闭环模式来确定最佳编码模式，并基于 在最佳编码模式下。

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