发明授权
- 专利标题: Resist underlayer composition and process of producing integrated circuit devices using the same
- 专利标题(中): 抗蚀底层组合物和使用其制造集成电路器件的工艺
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申请号: US13539760申请日: 2012-07-02
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公开(公告)号: US09140986B2公开(公告)日: 2015-09-22
- 发明人: Mi-Young Kim , Sang-Kyun Kim , Hyeon-Mo Cho , Sang-Ran Koh , Hui-Chan Yun , Yong-Jin Chung , Jong-Seob Kim
- 申请人: Mi-Young Kim , Sang-Kyun Kim , Hyeon-Mo Cho , Sang-Ran Koh , Hui-Chan Yun , Yong-Jin Chung , Jong-Seob Kim
- 申请人地址: KR Gumi-si, Kyeongsangbuk-do
- 专利权人: CHEIL INDUSTRIES, INC.
- 当前专利权人: CHEIL INDUSTRIES, INC.
- 当前专利权人地址: KR Gumi-si, Kyeongsangbuk-do
- 代理机构: Lee & Morse, P.C.
- 优先权: KR10-2009-0136179 20091231
- 主分类号: C08G77/08
- IPC分类号: C08G77/08 ; G03F7/075 ; G03F7/11 ; H01L21/02 ; H01L21/033 ; C08L83/04 ; C08G77/16 ; C08G77/18 ; C08L83/06
摘要:
A resist underlayer composition includes a solvent and an organosilane condensation polymerization product, the organosilane condensation polymerization product including about 40 to about 80 mol % of a structural unit represented by the following Chemical Formula 1,
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