发明申请
- 专利标题： RESIST UNDERLAYER COMPOSITION AND METHOD OF MANUFACTURING SEMICONDUCTOR INTEGRATED CIRCUIT DEVICES USING THE SAME
- 专利标题（中）： 耐蚀组合物及使用其制造半导体集成电路器件的方法
-
申请号： US13539894申请日： 2012-07-02
-
公开(公告)号： US20120270143A1公开(公告)日： 2012-10-25
- 发明人: Hui-Chan YUN , Sang-Kyun KIM , Hyeon-Mo CHO , Mi-Young KIM , Sang-Ran KOH , Yong-Jin CHUNG , Jong-Seob KIM
- 申请人： Hui-Chan YUN , Sang-Kyun KIM , Hyeon-Mo CHO , Mi-Young KIM , Sang-Ran KOH , Yong-Jin CHUNG , Jong-Seob KIM
- 优先权： KR10-2009-0134325 20091230
- 主分类号： C08L83/04
- IPC分类号： C08L83/04 ; G03F7/20 ; B32B3/30 ; C08K5/3432
摘要：
A resist underlayer composition, including a solvent, and an organosilane condensation polymerization product including about 10 to about 40 mol % of a structural unit represented by Chemical Formula 1:
信息查询
