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1.发明申请RESIST UNDERLAYER COMPOSITION AND METHOD OF MANUFACTURING SEMICONDUCTOR INTEGRATED CIRCUIT DEVICES USING THE SAME 审中-公开耐蚀组合物及使用其制造半导体集成电路器件的方法公开(公告)号：US20120270143A1
公开(公告)日：2012-10-25
申请号：US13539894
申请日：2012-07-02
申请人： Hui-Chan YUN , Sang-Kyun KIM , Hyeon-Mo CHO , Mi-Young KIM , Sang-Ran KOH , Yong-Jin CHUNG , Jong-Seob KIM
发明人： Hui-Chan YUN , Sang-Kyun KIM , Hyeon-Mo CHO , Mi-Young KIM , Sang-Ran KOH , Yong-Jin CHUNG , Jong-Seob KIM
IPC分类号： C08L83/04 , G03F7/20 , B32B3/30 , C08K5/3432
CPC分类号： G03F7/0752 , G03F7/094 , G03F7/11
摘要： A resist underlayer composition, including a solvent, and an organosilane condensation polymerization product including about 10 to about 40 mol % of a structural unit represented by Chemical Formula 1:
摘要翻译： 包括溶剂的抗蚀剂底层组合物和包含由化学式1表示的结构单元的约10至约40mol％的有机硅烷缩聚产物：
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2.发明申请RESIST UNDERLAYER COMPOSITION AND PROCESS OF PRODUCING INTEGRATED CIRCUIT DEVICES USING THE SAME 有权使用相同的底层组合物和制造集成电路装置的方法公开(公告)号：US20120267766A1
公开(公告)日：2012-10-25
申请号：US13539760
申请日：2012-07-02
申请人： Mi-Young KIM , Sang-Kyun KIM , Hyeon-Mo CHO , Sang-Ran KOH , Hui-Chan YUN , Yong-Jin CHUNG , Jong-Seob KIM
发明人： Mi-Young KIM , Sang-Kyun KIM , Hyeon-Mo CHO , Sang-Ran KOH , Hui-Chan YUN , Yong-Jin CHUNG , Jong-Seob KIM
IPC分类号： C08K5/101 , H01L21/31 , H01L29/02 , C08K5/3432
CPC分类号： G03F7/0752 , C08G77/16 , C08G77/18 , C08L83/04 , C08L83/06 , G03F7/11 , H01L21/02126 , H01L21/02216 , H01L21/02282 , H01L21/0332
摘要： A resist underlayer composition includes a solvent and an organosilane condensation polymerization product, the organosilane condensation polymerization product including about 40 to about 80 mol % of a structural unit represented by the following Chemical Formula 1,
摘要翻译： 抗蚀剂底层组合物包括溶剂和有机硅烷缩聚产物，所述有机硅烷缩聚产物包含约40至约80mol％的由以下化学式1表示的结构单元，
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3.发明申请公开(公告)号：US20120282776A1
公开(公告)日：2012-11-08
申请号：US13540111
申请日：2012-07-02
申请人： Mi-Young KIM , Sang-Kyun KIM , Hyeon-Mo CHO , Chang-Soo WOO , Sang-Ran KOH , Hui-Chan YUN , Woo-Jin LEE , Jong-Seob KIM
发明人： Mi-Young KIM , Sang-Kyun KIM , Hyeon-Mo CHO , Chang-Soo WOO , Sang-Ran KOH , Hui-Chan YUN , Woo-Jin LEE , Jong-Seob KIM
IPC分类号： C09D183/06 , H01L21/311
CPC分类号： G03F7/0752 , G03F7/09 , G03F7/11
摘要： A photoresist underlayer composition includes a solvent, and a polysiloxane resin represented by Chemical Formula 1: {(SiO1.5—Y—SiO1.5)(SiO2)y(XSiO1.5)z}(OH)e(OR1)f. [Chemical Formula 1]
摘要翻译： 光致抗蚀剂底层组合物包括溶剂和由化学式1表示的聚硅氧烷树脂：{（SiO 1.5-Y-SiO 1.5）（SiO 2）y（XSiO 1.5）z}（OH）e（OR 1）f。 [化学式1]
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4.发明申请RESIN COMPOSITION FOR TRANSPARENT ENCAPSULATION MATERIAL AND ELECTRONIC DEVICE FORMED USING THE SAME 有权用于透明材料的树脂组合物和使用其形成的电子器件公开(公告)号：US20120270998A1
公开(公告)日：2012-10-25
申请号：US13535673
申请日：2012-06-28
申请人： Sang-Ran KOH , June-Ho SHIN , Hyun-Jung AHN , Sung-Hwan CHA , Young-Eun CHOI , Doo-Young JUNG , Sang-Kyun KIM , Jong-Seob KIM
发明人： Sang-Ran KOH , June-Ho SHIN , Hyun-Jung AHN , Sung-Hwan CHA , Young-Eun CHOI , Doo-Young JUNG , Sang-Kyun KIM , Jong-Seob KIM
IPC分类号： C08L83/06
摘要： A resin composition for a transparent encapsulation material, the resin composition including a polysiloxane obtained by copolymerization of a first silicon compound represented by the following Chemical Formula 1 and a second silicon compound including a compound represented by the following Chemical Formula 2,
摘要翻译： 一种透明包封材料用树脂组合物，该树脂组合物含有通过由下述化学式1表示的第一硅化合物的共聚合得到的聚硅氧烷和包含由下述化学式2表示的化合物的第二硅化合物，
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5.发明申请TRANSPARENT RESIN FOR ENCAPSULATION MATERIAL AND ELECTRONIC DEVICE INCLUDING THE SAME 失效用于封装材料的透明树脂和包括其的电子器件公开(公告)号：US20120271006A1
公开(公告)日：2012-10-25
申请号：US13535956
申请日：2012-06-28
申请人： June-Ho SHIN , Sang-Ran KOH , Sung-Hwan CHA , Hyun-Jung AHN , Young-Eun CHOI
发明人： June-Ho SHIN , Sang-Ran KOH , Sung-Hwan CHA , Hyun-Jung AHN , Young-Eun CHOI
CPC分类号： C08G77/02 , C08G77/58 , Y10T428/31663
摘要： A transparent resin for an encapsulation material, including a polymetallosiloxane obtained from at least one metal compound represented by Chemical Formulae 1A to 1D copolymerized with a silicon compound including a compound represented by Chemical Formula 2:
摘要翻译： 一种用于包封材料的透明树脂，包括由至少一种由化学式1A至1D表示的金属化合物获得的聚金属硅氧烷，所述金属化合物与包含由化学式2表示的化合物的硅化合物共聚合：
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6.发明申请POLYORGANOSILOXANE, ENCAPSULATION MATERIAL OBTAINED FROM THE POLYORGANOSILOXANE, AND ELECTRONIC DEVICE INCLUDING THE ENCAPSULATION MATERIAL 有权聚对苯二甲酸乙二醇酯，从聚硅氧烷中获得的包封材料，以及包括包封材料的电子装置公开(公告)号：US20120046423A1
公开(公告)日：2012-02-23
申请号：US13207665
申请日：2011-08-11
申请人： Sang-Ran KOH , June-Ho Shin , Woo-Han Kim , Sung-Hwan Cha , Hyun-Jung Ahn
发明人： Sang-Ran KOH , June-Ho Shin , Woo-Han Kim , Sung-Hwan Cha , Hyun-Jung Ahn
IPC分类号： C08G77/38
CPC分类号： H01L23/296 , C08G77/12 , C08G77/20 , C08G77/70 , C08G77/80 , C08L83/04 , H01L2924/0002 , H01L2924/12044 , C08L83/00 , H01L2924/00
摘要： A polyorganosiloxane composition, an encapsulation material, and an electronic device, the polyorganosiloxane composition including a linear first polyorganosiloxane resin including a moiety represented by the following Chemical Formula 1 and a moiety represented by the following Chemical Formula 2, the first polyorganosiloxane resin including double bonds at both terminal ends thereof, and a second polyorganosiloxane resin having a three dimensional network structure,
摘要翻译： 聚有机硅氧烷组合物，包封材料和电子器件，所述聚有机硅氧烷组合物包括线性第一聚有机硅氧烷树脂，其包含由以下化学式1表示的部分和由以下化学式2表示的部分，所述第一聚有机硅氧烷树脂包括双键 在其两个末端和具有三维网状结构的第二聚有机硅氧烷树脂中，
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7.发明申请公开(公告)号：US20140357792A1
公开(公告)日：2014-12-04
申请号：US14455586
申请日：2014-08-08
申请人： Sung-Hwan CHA , Sang-Ran KOH , Yong Kook KIM , Woo-Han KIM , Ha Neul KIM , Chi Won AN
发明人： Sung-Hwan CHA , Sang-Ran KOH , Yong Kook KIM , Woo-Han KIM , Ha Neul KIM , Chi Won AN
IPC分类号： C09D183/04 , H01L51/52 , H01L31/0203 , H01L33/56
CPC分类号： H01L23/296 , C08G77/12 , C08G77/20 , C08L83/04 , C09D183/04 , H01L31/0203 , H01L31/0481 , H01L33/56 , H01L51/5237 , H01L51/5253 , H01L2924/0002 , H01L2924/12044 , Y02E10/50 , H01L2924/00
摘要： A resin for an encapsulation material includes a first polysiloxane including hydrogen bound to silicon (Si—H) at its terminal end, and a second polysiloxane including an alkenyl group bound to silicon (Si-Vi) at its terminal end, wherein a ratio (Si—H/Si-Vi) of hydrogen bound to silicon (Si—H) in the first polysiloxane to the alkenyl group bound to silicon (Si-Vi) in the second polysiloxane is about 1 to about 1.
摘要翻译： 用于封装材料的树脂包括其末端具有与硅（Si-H）结合的氢的第一聚硅氧烷和在其末端包含与硅（Si-Vi）键合的烯基的第二聚硅氧烷，其中， 与第二聚硅氧烷中与硅（Si-Vi）结合的烯基与第一聚硅氧烷中与硅（Si-H）结合的氢的Si-H / Si-Vi为约1至约1。
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8.发明申请公开(公告)号：US20120168780A1
公开(公告)日：2012-07-05
申请号：US13339510
申请日：2011-12-29
申请人： Sung-Hwan CHA , Sang-Ran KOH , Yong Kook KIM , Woo-Han KIM , Ha Neul KIM , Chi Won AN
发明人： Sung-Hwan CHA , Sang-Ran KOH , Yong Kook KIM , Woo-Han KIM , Ha Neul KIM , Chi Won AN
IPC分类号： H01L33/00 , H01L31/0203 , C08G77/20
CPC分类号： H01L23/296 , C08G77/12 , C08G77/20 , C08L83/04 , C09D183/04 , H01L31/0203 , H01L31/0481 , H01L33/56 , H01L51/5237 , H01L51/5253 , H01L2924/0002 , H01L2924/12044 , Y02E10/50 , H01L2924/00
摘要： A resin for an encapsulation material includes a first polysiloxane including hydrogen bound to silicon (Si—H) at its terminal end, and a second polysiloxane including an alkenyl group bound to silicon (Si-Vi) at its terminal end, wherein a ratio (Si—H/Si-Vi) of hydrogen bound to silicon (Si—H) in the first polysiloxane to the alkenyl group bound to silicon (Si-Vi) in the second polysiloxane is about 1 to about 1.
摘要翻译： 用于封装材料的树脂包括其末端具有与硅（Si-H）结合的氢的第一聚硅氧烷和在其末端包含与硅（Si-Vi）键合的烯基的第二聚硅氧烷，其中， 与第二聚硅氧烷中与硅（Si-Vi）结合的烯基与第一聚硅氧烷中与硅（Si-H）结合的氢的Si-H / Si-Vi为约1至约1。
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