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公开(公告)号：US20130103288A1
公开(公告)日：2013-04-25
申请号：US13703803
申请日：2011-05-06
IPC分类号： F02D45/00
CPC分类号： F02D45/00 , B60K23/02 , B60K26/021 , F16D48/06 , F16D2500/3068 , F16D2500/3107 , F16D2500/3121 , F16D2500/31413 , F16D2500/3144 , F16D2500/7101
摘要： A depression force of an accelerator pedal 2 is increased than a base depression force by a predetermined amount when an accelerator opening degree becomes a predetermined accelerator opening degree threshold value at which an engine speed necessary at a start of a vehicle can be obtained by a depression of the accelerator pedal 2 in a state where a clutch 102 is disengaged at the start of the vehicle. With this, at the start of the vehicle, a driver becomes easy to hold the accelerator pedal 2 in a constant accelerator opening degree at which the engine speed necessary at the start can be obtained. It is possible to smoothly engage the clutch 102, and then to attain the smooth start of the vehicle.
摘要翻译： 当加速器开度变为预定的加速器开度阈值时，加速器踏板2的踏力比基座踏力增加预定量，在该预定加速器开度阈值下，可以通过凹陷获得车辆起点所需的发动机转速 在离合器102在车辆开始时分离的状态下的加速器踏板2。 由此，在车辆开始时，驾驶员能够容易地将加速踏板2保持在可以获得开始时所需的发动机转速的恒定的加速器开度。 可以顺利地接合离合器102，然后实现车辆的平稳启动。
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公开(公告)号：US20120304800A1
公开(公告)日：2012-12-06
申请号：US13578882
申请日：2011-01-13
IPC分类号： G05G1/38
CPC分类号： B60K26/021 , F02D11/02 , Y10T74/20534
摘要： When an accelerator opening exceeds an opening threshold value, a base pedaling force of an accelerator pedal is increased. An increment to a pedaling force is changed in accordance with the accelerator opening in a manner to make the pedaling force approach a characteristic that the pedaling force increases at a constant rate with respect to increase of the accelerator opening. For example, when a mechanism is employed which has a convex-up characteristic wherein the rate of increase of base pedaling force decreases as the accelerator opening increases, the increment is set to increase as the accelerator opening increases. Conversely, when a mechanism is employed which has a convex-down characteristic wherein the rate of base pedaling force increases as the accelerator opening increases, the increment is set to decrease as the accelerator opening increases.
摘要翻译： 当加速器开度超过打开阈值时，加速踏板的基础踏力增加。 踏力的增量根据加速器开度而改变，以使踏力相对于加速器开度的增加以蹬力以恒定速度增加的特性。 例如，当采用具有凸起特征的机构时，其中基础踏力的增加速率随着加速器开度的增加而减小，增量被设定为随着油门开度的增加而增加。 相反，当采用具有凸起下降特性的机构时，其中基础踏力的速率随着加速器开度的增加而增加，所以增量随着加速器开度的增加而减小。
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3.发明授权
公开(公告)号：US4788156A
公开(公告)日：1988-11-29
申请号：US911270
申请日：1986-09-24
IPC分类号： H01L29/10 , H01L21/265 , H01L21/324
CPC分类号： H01L29/1075
摘要： One embodiment of a process in accordance with our invention includes the step of forming a P type region on a semiconductor substrate. After the P type region is formed, an N type layer is epitaxially grown on the P type region. A Schottky gate is then formed on the N type epitaxial layer. A first portion of the epitaxial layer serves as a transistor source, a second portion of the epitaxial layer serves as the transistor drain, and a third portion of the epitaxial layer serves as the channel. Of importance, the P type semiconductor region helps prevent various short channel effects caused when current carriers flowing between the source and drain flow too far from the Schottky gate.
摘要翻译： 根据本发明的方法的一个实施方案包括在半导体衬底上形成P型区域的步骤。 在形成P型区之后，在P型区上外延生长N型层。 然后在N型外延层上形成肖特基栅极。 外延层的第一部分用作晶体管源极，外延层的第二部分用作晶体管漏极，外延层的第三部分用作沟道。 重要的是，P型半导体区域有助于防止在源极和漏极之间流动的载流子流过与肖特基栅极太远时引起的各种短沟道效应。
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公开(公告)号：US3986196A
公开(公告)日：1976-10-12
申请号：US591690
申请日：1975-06-30
IPC分类号： H01L29/80 , H01L21/338 , H01L21/60 , H01L23/36 , H01L23/48 , H01L23/66 , H01L29/41 , H01L29/417 , H01L29/812 , H01L29/06 , H01L23/02
CPC分类号： H01L24/85 , H01L23/36 , H01L23/481 , H01L23/66 , H01L24/48 , H01L24/73 , H01L29/4175 , H01L2224/45015 , H01L2224/45144 , H01L2224/48091 , H01L2224/48227 , H01L2224/48472 , H01L2224/48599 , H01L2224/73265 , H01L2224/85201 , H01L2224/85203 , H01L2224/85205 , H01L24/45 , H01L2924/00014 , H01L2924/01006 , H01L2924/01014 , H01L2924/01015 , H01L2924/01019 , H01L2924/01023 , H01L2924/01027 , H01L2924/01029 , H01L2924/01031 , H01L2924/01032 , H01L2924/01033 , H01L2924/01041 , H01L2924/0105 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01087 , H01L2924/014 , H01L2924/10158 , H01L2924/10329 , H01L2924/12032 , H01L2924/1306 , H01L2924/13063 , H01L2924/15153 , H01L2924/1517 , H01L2924/19041 , H01L2924/19043 , H01L2924/20752 , H01L2924/30107 , H01L2924/3011
摘要： A microwave field effect transistor (FET) comprises source, gate, and drain electrodes deposited on an epitaxial layer grown on a semi-insulating substrate. The FET has lowered thermal resistance, lowered source lead inductance, and lowered gate series resistance, together with concomitant performance improvements, through the use of a novel source electrode connection which comprises a deposited or plated through metallic contact extending from the bottom of the wafer, through a hole in the substrate and epitaxial layer, to the underside of the source or other electrode which is deposited on the top side of the epitaxial layer. The chip, comprising the substrate, epitaxial layer, and top electrodes, is mounted on a heat sink. The chip's underside, including the bottom surface of the plated through source contact, is conductively bonded to the top surface of the heat sink.
摘要翻译： 微波场效应晶体管（FET）包括沉积在半绝缘衬底上生长的外延层上的源极，栅极和漏极。 通过使用新颖的源电极连接，FET具有降低的热阻，降低的源极引线电感和降低的栅极串联电阻以及伴随的性能改进，其包括从晶片的底部延伸的沉积或电镀的金属接触， 通过衬底和外延层中的孔到沉积在外延层的顶侧上的源极或其他电极的下侧。 包括衬底，外延层和顶部电极的芯片安装在散热器上。 芯片的底面，包括电镀通孔源极触点的底表面，导电地结合到散热器的顶表面。
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公开(公告)号：US09261042B2
公开(公告)日：2016-02-16
申请号：US13703803
申请日：2011-05-06
CPC分类号： F02D45/00 , B60K23/02 , B60K26/021 , F16D48/06 , F16D2500/3068 , F16D2500/3107 , F16D2500/3121 , F16D2500/31413 , F16D2500/3144 , F16D2500/7101
摘要： A depression force of an accelerator pedal 2 is increased than a base depression force by a predetermined amount when an accelerator opening degree becomes a predetermined accelerator opening degree threshold value at which an engine speed necessary at a start of a vehicle can be obtained by a depression of the accelerator pedal 2 in a state where a clutch 102 is disengaged at the start of the vehicle. With this, at the start of the vehicle, a driver becomes easy to hold the accelerator pedal 2 in a constant accelerator opening degree at which the engine speed necessary at the start can be obtained. It is possible to smoothly engage the clutch 102, and then to attain the smooth start of the vehicle.
摘要翻译： 当加速器开度变为预定的加速器开度阈值时，加速器踏板2的踏力比基座踏力增加预定量，在该预定加速器开度阈值下，可以通过凹陷获得车辆起点所需的发动机转速 在离合器102在车辆开始时分离的状态下的加速器踏板2。 由此，在车辆开始时，驾驶员能够容易地将加速踏板2保持在可以获得开始时所需的发动机转速的恒定的加速器开度。 可以顺利地接合离合器102，然后实现车辆的平稳启动。
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6.发明授权Accelerator pedal depression force setting method for accelerator pedal depression force control device 有权加速踏板下压力控制装置的加速踏板踏板踏力设定方法公开(公告)号：US08977462B2
公开(公告)日：2015-03-10
申请号：US13703501
申请日：2011-05-06
CPC分类号： G05G1/40 , B60K26/021 , F02D11/04 , F02D2200/0404 , F02D2200/602 , G05G1/30 , Y10T74/20534
摘要： When a depression force of an accelerator pedal is increased than a base depression force by a predetermined increase amount when an accelerator opening degree becomes greater than an accelerator opening degree threshold value, an overshoot control is performed so that a depression force increase command is once increased than a depression force increase target command value which increases the depression force of the accelerator pedal than the base depression force by the predetermined amount, and returned to the depression force increase target command value. In this overshoot control, an overshoot controlled variable of the overshoot control is set based on a magnitude of a hysteresis of the base depression force of the accelerator pedal.
摘要翻译： 当加速器开度大于加速器开度阈值时，当加速器踏板的踏力比基座踏力增加预定增加量时，执行过冲控制，使得抑制力增加命令一度增加 而不是将加速踏板的下压力比基座踏力增大预定量的抑制力增加目标指令值，并返回到抑制力增加目标指令值。 在该过冲控制中，基于加速器踏板的基座下压力的滞后的大小来设定过冲控制的过冲控制变量。
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公开(公告)号：US08844401B2
公开(公告)日：2014-09-30
申请号：US13701994
申请日：2011-04-20
CPC分类号： G05G1/38 , B60K26/02 , B60K2026/023 , F02D11/02 , Y10T74/20534
摘要： When the accelerator opening degree becomes equal to or smaller than an increase amount cancel threshold value (timing t2) while the depression force of an accelerator pedal 2 is increased than a base depression force by a predetermined increase amount of the depression force, the predetermined increase amount of the depression force is decreased at a predetermined rate, and moreover, when the accelerator opening degree becomes greater than a predetermined accelerator opening degree threshold value (timing t3) while the predetermined increase amount of the depression force is decreased, the depression force of the accelerator pedal 2 is increased with respect to the base depression force so that the increase amount of the depression force with respect to the base depression force becomes greater than the predetermined increase amount of the depression force.
摘要翻译： 当加速器踏板2的踏力比基座踏力增加预定增加量的踏力时，当加速器开度变为等于或小于增加量抵消阈值（时刻t2）时，预定增加 抑制力的量以预定的速度减小，此外，当加速器开度大于预定的加速器开度阈值（时刻t3），同时抑制力的预定增加量减小时，抑制力 加速器踏板2相对于基座踏力增加，使得相对于基座踏力的踏力增加量大于预定的踏力的增加量。
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公开(公告)号：US08457855B2
公开(公告)日：2013-06-04
申请号：US12785720
申请日：2010-05-24
CPC分类号： B60K26/021 , B60W2540/106
摘要： An accelerator reaction force control apparatus has an accelerator position detecting device that detects an accelerator position and a reaction force varying device that varies a reaction force of an accelerator. The reaction force varying device increases the accelerator's reaction force beyond a base reaction force in response to the accelerator position being equal to or larger than a reaction force increase threshold, and decreases the accelerator's reaction force toward the base reaction force in response to the accelerator position becoming equal to or smaller than a reaction force increase cancellation threshold after the reaction force has been increased beyond the base reaction force. The reaction force varying device varies a reaction force decrease rate at which the accelerator's reaction force is decreased based on an accelerator position change condition existing at a time when the accelerator position becomes equal to or smaller than the reaction force increase cancellation threshold.
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公开(公告)号：US20120059563A1
公开(公告)日：2012-03-08
申请号：US13266373
申请日：2010-09-01
IPC分类号： G06F7/00
CPC分类号： F02D11/02 , B60K26/021 , B60K2026/023 , G05G1/38
摘要： An accelerator reaction force control apparatus is provided with an accelerator position detecting device, a reaction force varying device and a threshold value setting device. The reaction force varying device varies a reaction force of the accelerator so as to increase a reaction force of the accelerator by a prescribed increase amount with respect to a base reaction force when the accelerator position is equal to or larger than an accelerator position threshold value. The reaction force varying device also varies a reaction force increase rate at a first increase rate during a first reaction force increase period of the increase of the reaction force, and at a second increase rate during a second reaction force increase period of the increase of the reaction force. The second increase rate is larger during the second reaction force increase period than during the first reaction force increase period.
摘要翻译： 加速器反作用力控制装置设置有加速器位置检测装置，反作用力变更装置和阈值设定装置。 反作用力变化装置改变加速器的反作用力，以便当加速器位置等于或大于加速器位置阈值时，相对于基座反作用力增大加速器的反作用力。 反作用力变化装置还可以在反作用力增加的第一反作用力增加期间以第一增加速度改变反作用力增加率，并且在增加第二反作用力增加期间的第二增加速率 反作用力。 第二反应力增加期间的第二次增加率比第一反应力增加期间的增加率更大。
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10.发明授权
公开(公告)号：US4972250A
公开(公告)日：1990-11-20
申请号：US20920
申请日：1987-03-02
申请人： Masahiro Omori , Edward B. Stoneham
发明人： Masahiro Omori , Edward B. Stoneham
IPC分类号： H01L21/314 , H01L23/29 , H01L23/31
CPC分类号： H01L23/298 , H01L23/3171 , H01L23/3192 , H01L2924/0002 , H01L2924/19041
摘要： A protective coating useful as a passivation layer for semiconductor devices incorporates a thin film of an amorphous diamond-like carbon. In one implementation, a thin film of amorphous silicon is deposited over the carbon material. The semiconductive passivation coating eliminates electrical shorts, dissipates charge build-up and protects against chemical contamination.
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