发明授权
US4788156A Subchannel doping to reduce short-gate effects in field effect
transistors
失效
子信道掺杂以减少场效应晶体管中的短栅效应
- 专利标题： Subchannel doping to reduce short-gate effects in field effect transistors
- 专利标题（中）： 子信道掺杂以减少场效应晶体管中的短栅效应
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申请号： US911270申请日： 1986-09-24
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公开(公告)号： US4788156A公开(公告)日： 1988-11-29
- 发明人: Edward B. Stoneham , Masahiro Omori , Arthur D. Herbig
- 申请人： Edward B. Stoneham , Masahiro Omori , Arthur D. Herbig
- 申请人地址： CA Fremont
- 专利权人： Microwave Technology, Inc.
- 当前专利权人： Microwave Technology, Inc.
- 当前专利权人地址： CA Fremont
- 主分类号： H01L29/10
- IPC分类号： H01L29/10 ; H01L21/265 ; H01L21/324
摘要：
One embodiment of a process in accordance with our invention includes the step of forming a P type region on a semiconductor substrate. After the P type region is formed, an N type layer is epitaxially grown on the P type region. A Schottky gate is then formed on the N type epitaxial layer. A first portion of the epitaxial layer serves as a transistor source, a second portion of the epitaxial layer serves as the transistor drain, and a third portion of the epitaxial layer serves as the channel. Of importance, the P type semiconductor region helps prevent various short channel effects caused when current carriers flowing between the source and drain flow too far from the Schottky gate.
公开/授权文献
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