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    Magnetic Memory Devices
    4.
    发明申请
    Magnetic Memory Devices 有权
    磁存储器件

    公开(公告)号：US20160093669A1

    公开(公告)日：2016-03-31

    申请号：US14715633

    申请日：2015-05-19

    Applicant: Sung-Chul LEE ,  Kwang-Seok KIM ,  Kee-Won KIM ,  Young-Man JANG ,  Ung-Hwan PI

    Inventor： Sung-Chul LEE ,  Kwang-Seok KIM ,  Kee-Won KIM ,  Young-Man JANG ,  Ung-Hwan PI

    IPC: H01L27/22 ,  H01L43/10

    CPC classification number: H01L27/222 ,  G11C11/161 ,  H01L27/228 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12

    Abstract: Magnetic memory devices may include a substrate, a circuit device on the substrate, a plurality of lower electrodes electrically connected to the circuit device, a magnetic tunnel junction (MTJ) structure commonly provided on the plurality of the lower electrodes, and a plurality of upper electrodes on the MTJ structure. The MTJ structure may include a plurality of magnetic material patterns and a plurality of insulation material patterns separating the magnetic material patterns from each other.

    Abstract translation: 磁存储器件可以包括衬底，衬底上的电路器件，电连接到电路器件的多个下电极，通常设置在多个下电极上的磁隧道结（MTJ）结构，以及多个上电极 MTJ结构上的电极。 MTJ结构可以包括多个磁性材料图案和将磁性材料图案彼此分开的多个绝缘材料图案。

    Method for switching between minor channels for digital televisions
    6.
    发明授权
    Method for switching between minor channels for digital televisions 有权
    用于数字电视的次要通道之间切换的方法

    公开(公告)号：US08826323B2

    公开(公告)日：2014-09-02

    申请号：US12189359

    申请日：2008-08-11

    Applicant: Kwang Seok Kim

    Inventor： Kwang Seok Kim

    IPC: H04N7/16

    CPC classification number: H04N5/50 ,  H04N5/4401 ,  H04N21/4263

    Abstract: A method for switching between minor channels for digital televisions is disclosed. The method includes determining whether a minor channel is in a non-signal state, analyzing information of a major channel, to which the minor channel in the non-signal state pertains, if the minor channel is in the non-signal state, followed by obtaining information of minor channels pertaining to the major channel, and selecting other minor channels excluding the minor channel in the non-signal state based on an analysis of the information of the minor channels to sequentially determine whether the selected minor channels are in a signal state, followed by switching from the minor channel in the non-signal state to a minor channel in the signal state if a minor channel in the signal state is present.

    Abstract translation: 公开了一种用于数字电视的次要信道之间切换的方法。 该方法包括：如果次信道处于非信号状态，则确定次信道是否处于非信号状态，分析非信号状态中的次信道所属的主信道的信息，其次是 获取关于主频道的次要频道的信息，并且基于对次要信道的信息的分析来选择在非信号状态中排除次要频道的其他次频道，以顺序地确定所选择的次频道是否处于信号状态 如果存在信号状态的次要信道，则以非信号状态的次要信道切换到处于信号状态的次要信道。

    MAGNETORESISTIVE ELEMENTS AND MEMORY DEVICES INCLUDING THE SAME
    8.
    发明申请
    MAGNETORESISTIVE ELEMENTS AND MEMORY DEVICES INCLUDING THE SAME 有权
    磁性元件和包括其的存储器件

    公开(公告)号：US20130161769A1

    公开(公告)日：2013-06-27

    申请号：US13591809

    申请日：2012-08-22

    Applicant: Sung-chul LEE ,  Kwang-seok KIM ,  Kee-won KIM ,  Young-man JANG ,  Ung-hwan PI

    Inventor： Sung-chul LEE ,  Kwang-seok KIM ,  Kee-won KIM ,  Young-man JANG ,  Ung-hwan PI

    IPC: H01L29/82 ,  G11B5/39

    CPC classification number: G11C11/161 ,  G11C11/15 ,  H01L43/08 ,  Y10T428/1121

    Abstract: Magnetoresistive elements, and memory devices including the same, include a free layer having a changeable magnetization direction, a pinned layer facing the free layer and having a fixed magnetization direction, and an auxiliary element on a surface of the pinned layer. The auxiliary element has a width smaller than a width of the pinned layer, and a magnetization direction fixed to a direction the same as a direction of the fixed magnetization direction of the pinned layer.

    Abstract translation: 磁阻元件和包括它们的存储器件包括具有可变磁化方向的自由层，面向自由层的固定层并且具有固定的磁化方向，以及在被钉扎层的表面上的辅助元件。 辅助元件的宽度小于钉扎层的宽度，并且固定在与被钉扎层的固定磁化方向的方向相同的方向上的磁化方向。

    DATA SENSING CIRCUIT AND MEMORY DEVICE INCLUDING THE SAME
    9.
    发明申请
    DATA SENSING CIRCUIT AND MEMORY DEVICE INCLUDING THE SAME 有权
    数据传感电路和包括其的存储器件

    公开(公告)号：US20130155786A1

    公开(公告)日：2013-06-20

    申请号：US13605818

    申请日：2012-09-06

    Applicant: Kwang-Seok KIM

    Inventor： Kwang-Seok KIM

    IPC: G11C7/06 ,  G11C7/02

    CPC classification number: G11C7/02 ,  G11C11/4091 ,  G11C11/4094

    Abstract: A data sensing circuit includes: a current source configured to supply a reference current to an output line; a switching precharging unit configured to couple an input line with the output line during a precharge operation of the input line; and a current sinking unit configured to sink a current from the output line in response to a voltage level of the input line.

    Abstract translation: 数据感测电路包括：被配置为向输出线提供参考电流的电流源; 开关预充电单元，被配置为在输入线的预充电操作期间将输入线耦合到输出线; 以及电流吸收单元，被配置为响应于输入线的电压电平从输出线吸收电流。

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