Invention Application
US20130140657A1 MAGNETIC MEMORY DEVICES INCLUDING FREE MAGNETIC LAYER HAVING THREE-DIMENSIONAL STRUCTURE
审中-公开
包括具有三维结构的自由磁层的磁记忆装置
- Patent Title: MAGNETIC MEMORY DEVICES INCLUDING FREE MAGNETIC LAYER HAVING THREE-DIMENSIONAL STRUCTURE
- Patent Title (中): 包括具有三维结构的自由磁层的磁记忆装置
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Application No.: US13572105Application Date: 2012-08-10
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Publication No.: US20130140657A1Publication Date: 2013-06-06
- Inventor: Sung-chul LEE , Kwang-seok KIM , Kee-won KIM , Young-man JANG , Ung-hwan PI
- Applicant: Sung-chul LEE , Kwang-seok KIM , Kee-won KIM , Young-man JANG , Ung-hwan PI
- Applicant Address: KR Suwon-si
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si
- Priority: KR10-2011-0129158 20111205
- Main IPC: H01L29/82
- IPC: H01L29/82
Abstract:
Magnetic memory devices including a free magnetic layer having a three-dimensional structure, include a switching device and a magnetic tunnel junction (MTJ) cell connected thereto. The MTJ cell includes a lower magnetic layer, a tunnel barrier layer, and a free magnetic layer, which are sequentially stacked. A portion of the free magnetic layer protrudes in a direction away from an upper surface of the tunnel barrier layer.
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