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    Oscillators and methods of manufacturing and operating the same
    5.
    发明授权
    Oscillators and methods of manufacturing and operating the same 有权
    振荡器和制造和操作方法相同

    公开(公告)号：US08598957B2

    公开(公告)日：2013-12-03

    申请号：US13208061

    申请日：2011-08-11

    Applicant: Sung-chul Lee ,  Ung-hwan Pi ,  Kee-won Kim ,  Kwang-seok Kim

    Inventor： Sung-chul Lee ,  Ung-hwan Pi ,  Kee-won Kim ,  Kwang-seok Kim

    IPC: H03B1/00 ,  H01L29/82 ,  B32B7/02

    CPC classification number: H03B15/006 ,  H01L27/22

    Abstract: Oscillators and methods of manufacturing and operating an oscillator are provided, the oscillators include a base free layer having a variable magnetization direction, and at least one oscillation unit on the base free layer. The oscillation unit may include a free layer element contacting the base free layer and having a width less than a width of the base free layer, a pinned layer element separated from the free layer element, and a separation layer element between the free layer element and the pinned layer element. A plurality of oscillation units may be arranged on the base free layer.

    Abstract translation: 提供振荡器和制造和操作振荡器的方法，所述振荡器包括具有可变磁化方向的基底自由层和在所述基底自由层上的至少一个振荡单元。 振荡单元可以包括与基底自由层接触并具有小于基底自由层的宽度的自由层元件，与自由层元件分离的钉扎层元件，以及在自由层元件和 固定层元素。 多个振荡单元可以布置在基底自由层上。

    Information storage device with domain wall moving unit and magneto-resistive device magnetization arrangement
    6.
    发明授权
    Information storage device with domain wall moving unit and magneto-resistive device magnetization arrangement 有权
    具有域壁移动单元和磁阻装置磁化布置的信息存储装置

    公开(公告)号：US08537506B2

    公开(公告)日：2013-09-17

    申请号：US12801712

    申请日：2010-06-22

    Applicant: Ji-young Bae ,  Sung-chul Lee ,  Sun-ae Seo ,  Young-jin Cho ,  Ung-hwan Pi ,  Jin-seong Heo

    Inventor： Ji-young Bae ,  Sung-chul Lee ,  Sun-ae Seo ,  Young-jin Cho ,  Ung-hwan Pi ,  Jin-seong Heo

    IPC: G11B5/39

    CPC classification number: G01R33/093 ,  B82Y25/00 ,  G11C11/161 ,  G11C11/1673 ,  G11C11/1675 ,  G11C19/0808 ,  H01L43/08

    Abstract: An information storage device includes a magnetic track and a magnetic domain wall moving unit. The magnetic track has a plurality of magnetic domains and a magnetic domain wall between each pair of adjacent magnetic domains. The magnetic domain wall moving unit is configured to move at least the magnetic domain wall. The information storage device further includes a magneto-resistive device configured to read information recorded on the magnetic track. The magneto-resistive device includes a pinned layer, a free layer and a separation layer arranged there between. The pinned layer has a fixed magnetization direction. The free layer is disposed between the pinned layer and the magnetic track, and has a magnetization easy axis, which is non-parallel to the magnetization direction of the pinned layer.

    Abstract translation: 信息存储装置包括磁道和磁畴壁移动单元。 磁道在每对相邻磁畴之间具有多个磁畴和磁畴壁。 磁畴壁移动单元构造成至少移动磁畴壁。 信息存储装置还包括被配置为读取记录在磁道上的信息的磁阻装置。 磁阻装置包括钉扎层，自由层和布置在其间的分离层。 被钉扎层具有固定的磁化方向。 自由层设置在被钉扎层和磁迹之间，并且具有与被钉扎层的磁化方向不平行的易磁化轴。

    Oscillators and method of operating the same
    7.
    发明申请
    Oscillators and method of operating the same 审中-公开
    振荡器和操作方法相同

    公开(公告)号：US20120038428A1

    公开(公告)日：2012-02-16

    申请号：US12929388

    申请日：2011-01-20

    Applicant: Sung-chul Lee ,  Ung-hwan Pi ,  Kee-won Kim ,  Kwang-seok Kim ,  Ho-jung Kim ,  Hyun-sik Choi

    Inventor： Sung-chul Lee ,  Ung-hwan Pi ,  Kee-won Kim ,  Kwang-seok Kim ,  Ho-jung Kim ,  Hyun-sik Choi

    IPC: H03B5/02

    CPC classification number: H03B15/006

    Abstract: Oscillators and a method of operating the same are provided, the oscillators include at least one oscillation device including a first magnetic layer having a magnetization direction that is variable, a second magnetic layer having a pinned magnetization direction, and a non-magnetic layer disposed between the first magnetic layer and the second magnetic layer. The oscillation device is configured to generate a signal having a set frequency. The oscillators further include a driving transistor having a drain connected to the at least one oscillation device, and a gate to which a control signal for controlling driving of the oscillation device is applied.

    Abstract translation: 提供了振荡器及其操作方法，所述振荡器包括至少一个振荡器件，该振荡器件包括具有可变磁化方向的第一磁性层，具有钉扎​​磁化方向的第二磁性层和设置在第二磁性层之间的非磁性层 第一磁性层和第二磁性层。 振荡装置被配置为产生具有设定频率的信号。 振荡器还包括具有连接到至少一个振荡装置的漏极的驱动晶体管，以及施加用于控制振荡装置的驱动的控制信号的栅极。

    Tri-gated molecular field effect transistor and method of fabricating the same
    10.
    发明授权
    Tri-gated molecular field effect transistor and method of fabricating the same 失效
    三门分子场效应晶体管及其制造方法

    公开(公告)号：US07436033B2

    公开(公告)日：2008-10-14

    申请号：US11135285

    申请日：2005-05-24

    Applicant: Chan Woo Park ,  Sung Yool Choi ,  Han Young Yu ,  Ung Hwan Pi

    Inventor： Chan Woo Park ,  Sung Yool Choi ,  Han Young Yu ,  Ung Hwan Pi

    IPC: H01L29/76 ,  H01L29/94 ,  H01L35/24 ,  H01L51/00 ,  H01L27/01

    CPC classification number: B82Y10/00 ,  H01L51/0545 ,  H01L51/0595 ,  Y10S977/936 ,  Y10S977/937 ,  Y10S977/938

    Abstract: A tri-gated molecular field effect transistor includes a gate electrode formed on a substrate and having grooves in a source region, a drain region and a channel region, and at least one molecule inserted between the source and drain electrodes in the channel region. The effects of the gate voltage on electrons passing through the channel can be maximized, and a variation gain of current supplied between the source and drain electrodes relative to the gate voltage can be greatly increased. Thus, a molecular electronic circuit having high functionality and reliability can be obtained.

    Abstract translation: 三门分子场效应晶体管包括形成在衬底上的栅电极，在源极区，漏区和沟道区中具有沟槽，以及至少一个分子插入在沟道区中的源极和漏极之间。 可以使栅极电压对通过沟道的电子的影响最大化，并且可以大大提高源极和漏极之间相对于栅极电压提供的电流的变化增益。 因此，可以获得具有高功能性和可靠性的分子电子电路。

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