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    Magnetic memory devices
    3.
    发明授权
    Magnetic memory devices 有权
    磁存储器件

    公开(公告)号：US09437654B2

    公开(公告)日：2016-09-06

    申请号：US14715633

    申请日：2015-05-19

    Applicant: Sung-Chul Lee ,  Kwang-Seok Kim ,  Kee-Won Kim ,  Young-Man Jang ,  Ung-Hwan Pi

    Inventor： Sung-Chul Lee ,  Kwang-Seok Kim ,  Kee-Won Kim ,  Young-Man Jang ,  Ung-Hwan Pi

    IPC: H01L27/22 ,  H01L43/10

    CPC classification number: H01L27/222 ,  G11C11/161 ,  H01L27/228 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12

    Abstract: Magnetic memory devices may include a substrate, a circuit device on the substrate, a plurality of lower electrodes electrically connected to the circuit device, a magnetic tunnel junction (MTJ) structure commonly provided on the plurality of the lower electrodes, and a plurality of upper electrodes on the MTJ structure. The MTJ structure may include a plurality of magnetic material patterns and a plurality of insulation material patterns separating the magnetic material patterns from each other.

    Abstract translation: 磁存储器件可以包括衬底，衬底上的电路器件，电连接到电路器件的多个下电极，通常设置在多个下电极上的磁隧道结（MTJ）结构，以及多个上电极 MTJ结构上的电极。 MTJ结构可以包括多个磁性材料图案和将磁性材料图案彼此分开的多个绝缘材料图案。

    MAGNETORESISTIVE ELEMENT AND MEMORY DEVICE INCLUDING THE SAME
    4.
    发明申请
    MAGNETORESISTIVE ELEMENT AND MEMORY DEVICE INCLUDING THE SAME 审中-公开
    包括其中的磁性元件和存储器件

    公开(公告)号：US20140339660A1

    公开(公告)日：2014-11-20

    申请号：US14247245

    申请日：2014-04-07

    Applicant: Sung-chul LEE ,  Kwang-seok KIM ,  Kee-won KIM ,  Young-man JANG ,  Ung-hwan PI

    Inventor： Sung-chul LEE ,  Kwang-seok KIM ,  Kee-won KIM ,  Young-man JANG ,  Ung-hwan PI

    IPC: H01L43/02 ,  H01L27/22

    CPC classification number: H01L43/08 ,  G11C11/161 ,  G11C11/1675 ,  H01L27/228

    Abstract: Provided are magnetoresistive elements, memory devices including the same, and an operation methods thereof. A magnetoresistive element may include a free layer, and the free layer may include a plurality of regions (layers) having different properties. The free layer may include a plurality of regions (layers) having different Curie temperatures. The Curie temperature of the free layer may change regionally or gradually away from the pinned layer. The free layer may include a first region having ferromagnetic characteristics at a first temperature and a second region having paramagnetic characteristics at the first temperature. The first region and the second region both may have ferromagnetic characteristics at a second temperature lower than the first temperature. The effective thickness of the free layer may change with temperature.

    Abstract translation: 提供了磁阻元件，包括其的存储器件及其操作方法。 磁阻元件可以包括自由层，并且自由层可以包括具有不同特性的多个区域（层）。 自由层可以包括具有不同居里温度的多个区域（层）。 自由层的居里温度可以在区域上或逐渐地远离被钉扎层的位置改变。 自由层可以包括在第一温度下具有铁磁特性的第一区域和在第一温度下具有顺磁特性的第二区域。 第一区域和第二区域在低于第一温度的第二温度下都可以具有铁磁特性。 自由层的有效厚度可随温度而变化。

    MAGNETIC MEMORY DEVICES AND METHODS OF WRITING DATA TO THE SAME
    5.
    发明申请
    MAGNETIC MEMORY DEVICES AND METHODS OF WRITING DATA TO THE SAME 有权
    磁记忆装置及将数据写入其中的方法

    公开(公告)号：US20140269036A1

    公开(公告)日：2014-09-18

    申请号：US14184043

    申请日：2014-02-19

    Applicant: Ung-hwan PI ,  Kwang-seok KIM ,  Kee-won KIM ,  Sung-chul LEE ,  Young-man JANG

    Inventor： Ung-hwan PI ,  Kwang-seok KIM ,  Kee-won KIM ,  Sung-chul LEE ,  Young-man JANG

    IPC: G11C11/16

    CPC classification number: G11C11/1675 ,  G11C11/16 ,  G11C11/161 ,  G11C11/18

    Abstract: Magnetic memory devices include a magnetoresistive cell including a free layer having a variable magnetization direction and a pinned layer having a fixed magnetization direction, a bit line on the magnetoresistive cell and including a spin Hall effect material layer exhibiting a spin Hall effect and contacting the free layer; and a lower electrode under the magnetoresistive cell. A voltage is applied between the bit line and the lower electrode so that current passes through the magnetoresistive cell.

    Abstract translation: 磁存储器件包括磁阻单元，其包括具有可变磁化方向的自由层和具有固定磁化方向的固定层，磁阻单元上的位线，并且包括具有旋转霍尔效应的旋转霍尔效应材料层， 层; 和位于磁阻电池下方的下电极。 在位线和下电极之间施加电压，使得电流通过磁阻电池。

    Tire pressure monitoring system and tire pressure sensor thereof
    6.
    发明申请
    Tire pressure monitoring system and tire pressure sensor thereof 审中-公开
    轮胎压力监测系统及轮胎压力传感器

    公开(公告)号：US20120017672A1

    公开(公告)日：2012-01-26

    申请号：US13259467

    申请日：2009-04-07

    Applicant: Sung-Sun Uh ,  Yong-Joon Kim ,  Young-Man Jang

    Inventor： Sung-Sun Uh ,  Yong-Joon Kim ,  Young-Man Jang

    IPC: B60C23/04

    CPC classification number: B60C23/0494 ,  B60C29/064

    Abstract: Provided is a tire pressure sensor (TPS) of a tire pressure monitoring system (TPMS). The TPS includes a detachable and angle-adjustable tire valve coupled to the front side of a tire pressure sensor housing. A holder bracket having a tire valve insertion hole is at the front side, and an insertion head inserted into the valve insertion hole is at an end of the tire valve. Accordingly, the angle of the tire valve is freely controlled, allowing compatible use regardless of the shape or size of wheels of cars and commercial vehicles. Thus, manufacturing costs can be greatly reduced, thereby obtaining superior competitiveness over competitors' products. Furthermore, air leakage through a wheel valve hole can be effectively prevented against high speed rotation and inertia motion caused by the high speed rotation during the driving of a vehicle.

    Abstract translation: 提供了轮胎压力监测系统（TPMS）的轮胎压力传感器（TPS）。 TPS包括联接到轮胎压力传感器壳体的前侧的可拆卸和角度可调轮胎阀。 具有轮胎阀插入孔的支架支架位于前侧，插入阀插入孔的插入头位于轮胎阀的端部。 因此，无论车辆和商用车辆的轮子的形状或尺寸如何，轮胎气门的角度都可以自由地控制，允许兼容的使用。 因此，制造成本可以大大降低，从竞争对手的产品获得优异的竞争力。 此外，可以有效地防止通过车轮阀孔的空气泄漏，防止在车辆行驶期间由高速旋转引起的高速旋转和惯性运动。

    Magnetic Memory Devices
    9.
    发明申请
    Magnetic Memory Devices 有权
    磁存储器件

    公开(公告)号：US20160093669A1

    公开(公告)日：2016-03-31

    申请号：US14715633

    申请日：2015-05-19

    Applicant: Sung-Chul LEE ,  Kwang-Seok KIM ,  Kee-Won KIM ,  Young-Man JANG ,  Ung-Hwan PI

    Inventor： Sung-Chul LEE ,  Kwang-Seok KIM ,  Kee-Won KIM ,  Young-Man JANG ,  Ung-Hwan PI

    IPC: H01L27/22 ,  H01L43/10

    CPC classification number: H01L27/222 ,  G11C11/161 ,  H01L27/228 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12

    Abstract: Magnetic memory devices may include a substrate, a circuit device on the substrate, a plurality of lower electrodes electrically connected to the circuit device, a magnetic tunnel junction (MTJ) structure commonly provided on the plurality of the lower electrodes, and a plurality of upper electrodes on the MTJ structure. The MTJ structure may include a plurality of magnetic material patterns and a plurality of insulation material patterns separating the magnetic material patterns from each other.

    Abstract translation: 磁存储器件可以包括衬底，衬底上的电路器件，电连接到电路器件的多个下电极，通常设置在多个下电极上的磁隧道结（MTJ）结构，以及多个上电极 MTJ结构上的电极。 MTJ结构可以包括多个磁性材料图案和将磁性材料图案彼此分开的多个绝缘材料图案。

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