Invention Grant
- Patent Title: Magnetoresistive elements and memory devices including the same
- Patent Title (中): 磁阻元件和包括其的存储器件
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Application No.: US13591809Application Date: 2012-08-22
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Publication No.: US08848432B2Publication Date: 2014-09-30
- Inventor: Sung-chul Lee , Kwang-seok Kim , Kee-won Kim , Young-man Jang , Ung-hwan Pi
- Applicant: Sung-chul Lee , Kwang-seok Kim , Kee-won Kim , Young-man Jang , Ung-hwan Pi
- Applicant Address: KR Gyeonggi-Do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-Do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2011-0139219 20111221
- Main IPC: G11C11/16
- IPC: G11C11/16 ; G11C11/15 ; H01L43/08
Abstract:
Magnetoresistive elements, and memory devices including the same, include a free layer having a changeable magnetization direction, a pinned layer facing the free layer and having a fixed magnetization direction, and an auxiliary element on a surface of the pinned layer. The auxiliary element has a width smaller than a width of the pinned layer, and a magnetization direction fixed to a direction the same as a direction of the fixed magnetization direction of the pinned layer.
Public/Granted literature
- US20130161769A1 MAGNETORESISTIVE ELEMENTS AND MEMORY DEVICES INCLUDING THE SAME Public/Granted day:2013-06-27
Information query
