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    Oscillators and methods of manufacturing and operating the same
    6.
    发明授权
    Oscillators and methods of manufacturing and operating the same 有权
    振荡器和制造和操作方法相同

    公开(公告)号：US08598957B2

    公开(公告)日：2013-12-03

    申请号：US13208061

    申请日：2011-08-11

    申请人： Sung-chul Lee ,  Ung-hwan Pi ,  Kee-won Kim ,  Kwang-seok Kim

    发明人： Sung-chul Lee ,  Ung-hwan Pi ,  Kee-won Kim ,  Kwang-seok Kim

    IPC分类号： H03B1/00 ,  H01L29/82 ,  B32B7/02

    CPC分类号： H03B15/006 ,  H01L27/22

    摘要： Oscillators and methods of manufacturing and operating an oscillator are provided, the oscillators include a base free layer having a variable magnetization direction, and at least one oscillation unit on the base free layer. The oscillation unit may include a free layer element contacting the base free layer and having a width less than a width of the base free layer, a pinned layer element separated from the free layer element, and a separation layer element between the free layer element and the pinned layer element. A plurality of oscillation units may be arranged on the base free layer.

    摘要翻译： 提供振荡器和制造和操作振荡器的方法，所述振荡器包括具有可变磁化方向的基底自由层和在所述基底自由层上的至少一个振荡单元。 振荡单元可以包括与基底自由层接触并具有小于基底自由层的宽度的自由层元件，与自由层元件分离的钉扎层元件，以及在自由层元件和 固定层元素。 多个振荡单元可以布置在基底自由层上。

    Nonvolatile logic circuit, integrated circuit including the nonvolatile logic circuit, and method of operating the integrated circuit
    7.
    发明授权
    Nonvolatile logic circuit, integrated circuit including the nonvolatile logic circuit, and method of operating the integrated circuit 有权
    非易失性逻辑电路，包括非易失性逻辑电路的集成电路和操作集成电路的方法

    公开(公告)号：US08509004B2

    公开(公告)日：2013-08-13

    申请号：US12801502

    申请日：2010-06-11

    申请人： Ho-jung Kim ,  Jai-kwang Shin ,  Kwang-seok Kim ,  Kee-won Kim

    发明人： Ho-jung Kim ,  Jai-kwang Shin ,  Kwang-seok Kim ,  Kee-won Kim

    IPC分类号： G11C7/10

    CPC分类号： H03K19/1733 ,  G11C14/0054 ,  G11C14/0081 ,  G11C14/009 ,  H03K3/356008

    摘要： A nonvolatile logic circuit includes a latch unit including a pair of first and second latch nodes; and a pair of first and second nonvolatile memory cells electrically connected to the first and second of latch nodes, respectively. A write operation is performed on the first and second nonvolatile memory cells according to a direction of a current flowing through the first and second nonvolatile memory cells when a write enable signal is activated. The direction of flow of current determined based on data on the respective first and second latch nodes, and a logic value written on the first nonvolatile memory cells is different from a logic value written on the second nonvolatile memory cell.

    摘要翻译： 非易失性逻辑电路包括：锁存单元，包括一对第一和第二锁存节点; 以及分别电连接到第一和第二锁存节点的一对第一和第二非易失性存储单元。 当写入使能信号被激活时，根据流过第一和第二非易失性存储器单元的电流的方向在第一和第二非易失性存储器单元上执行写入操作。 基于相应的第一和第二锁存节点上的数据确定的电流的流动方向和写在第一非易失性存储器单元上的逻辑值与写入第二非易失性存储单元的逻辑值不同。

    Oscillators and method of operating the same
    8.
    发明申请
    Oscillators and method of operating the same 审中-公开
    振荡器和操作方法相同

    公开(公告)号：US20120038428A1

    公开(公告)日：2012-02-16

    申请号：US12929388

    申请日：2011-01-20

    申请人： Sung-chul Lee ,  Ung-hwan Pi ,  Kee-won Kim ,  Kwang-seok Kim ,  Ho-jung Kim ,  Hyun-sik Choi

    发明人： Sung-chul Lee ,  Ung-hwan Pi ,  Kee-won Kim ,  Kwang-seok Kim ,  Ho-jung Kim ,  Hyun-sik Choi

    IPC分类号： H03B5/02

    CPC分类号： H03B15/006

    摘要： Oscillators and a method of operating the same are provided, the oscillators include at least one oscillation device including a first magnetic layer having a magnetization direction that is variable, a second magnetic layer having a pinned magnetization direction, and a non-magnetic layer disposed between the first magnetic layer and the second magnetic layer. The oscillation device is configured to generate a signal having a set frequency. The oscillators further include a driving transistor having a drain connected to the at least one oscillation device, and a gate to which a control signal for controlling driving of the oscillation device is applied.

    摘要翻译： 提供了振荡器及其操作方法，所述振荡器包括至少一个振荡器件，该振荡器件包括具有可变磁化方向的第一磁性层，具有钉扎​​磁化方向的第二磁性层和设置在第二磁性层之间的非磁性层 第一磁性层和第二磁性层。 振荡装置被配置为产生具有设定频率的信号。 振荡器还包括具有连接到至少一个振荡装置的漏极的驱动晶体管，以及施加用于控制振荡装置的驱动的控制信号的栅极。

    Magnetic memory devices using magnetic domain motion
    9.
    发明授权
    Magnetic memory devices using magnetic domain motion 有权
    使用磁畴运动的磁存储器件

    公开(公告)号：US07751223B2

    公开(公告)日：2010-07-06

    申请号：US11707002

    申请日：2007-02-16

    申请人： Tae-wan Kim ,  Kee-won Kim ,  Young-jin Cho ,  In-jun Hwang

    发明人： Tae-wan Kim ,  Kee-won Kim ,  Young-jin Cho ,  In-jun Hwang

    IPC分类号： G11C19/00

    CPC分类号： G11C11/16 ,  G11C19/0808 ,  G11C19/0841 ,  G11C2213/77

    摘要： A magnetic memory device includes a recording layer, a reference layer, a first input portion and a second input portion. The recording layer has perpendicular magnetization direction and a plurality of magnetic domains, and the reference layer corresponds to a portion of the recording layer and has a pinned magnetization direction. The recording layer has a data storage cell wherein a plurality of data bit regions each including a magnetic domain are formed. The magnetic domain corresponds to an effective size of the reference layer. The first input portion inputs at least one of a writing signal and a reading signal. The second input portion is electrically connected to the recording layer and inputs a magnetic domain motion signal in order to move data stored in a data bit region of the recording layer to an adjoining data bit region.

    摘要翻译： 磁存储器件包括记录层，参考层，第一输入部分和第二输入部分。 记录层具有垂直磁化方向和多个磁畴，并且参考层对应于记录层的一部分并具有钉扎磁化方向。 记录层具有数据存储单元，其中形成各自包括磁畴的多个数据位区域。 磁畴对应于参考层的有效尺寸。 第一输入部分输入写入信号和读取信号中的至少一个。 第二输入部分电连接到记录层并输入磁畴运动信号，以便将存储在记录层的数据位区域中的数据移动到相邻的数据位区域。