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公开(公告)号：US20050147145A1
公开(公告)日：2005-07-07
申请号：US10929718
申请日：2004-08-31
Applicant: Alex Behfar , Kiyofumi Muro , Cristian Stagarescu , Alfred Schremer
Inventor： Alex Behfar , Kiyofumi Muro , Cristian Stagarescu , Alfred Schremer
IPC: G02B5/28 , H01S20060101 , H01S3/03 , H01S3/08 , H01S5/00 , H01S5/026 , H01S5/0625 , H01S5/10 , H01S5/125 , H01S5/14 , H01S5/22 , H01S5/343
CPC classification number: H01S5/0625 , B82Y20/00 , H01S5/0264 , H01S5/06256 , H01S5/0655 , H01S5/1017 , H01S5/1021 , H01S5/1039 , H01S5/125 , H01S5/141 , H01S5/22 , H01S5/343 , H01S5/34313
Abstract: A single-mode, etched facet distributed Bragg reflector laser includes an AlGaInAs/InP laser cavity, a front mirror stack with multiple Fabry-Perot elements, a rear DBR reflector, and a rear detector. The front mirror stack elements and the rear reflector elements include input and output etched facets, and the laser cavity is an etched ridge cavity, all formed from an epitaxial wafer by a two-step lithography and CAIBE process.
Abstract translation: 单模蚀刻刻面分布布拉格反射激光器包括AlGaInAs / InP激光腔，具有多个法布里 - 珀罗元件的前镜叠层，后DBR反射器和后检测器。 前反射镜堆叠元件和后反射器元件包括输入和输出蚀刻刻面，并且激光腔是蚀刻的脊腔，全部由外延晶片通过两步光刻和CAIBE工艺形成。
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公开(公告)号：US20050123012A1
公开(公告)日：2005-06-09
申请号：US10982855
申请日：2004-11-08
Applicant: Naoki Hayamizu , Yutaka Ohki , Hideo Aoyagi , Takeshi Koiso , Yuji Yamagata , Kiyofumi Muro
Inventor： Naoki Hayamizu , Yutaka Ohki , Hideo Aoyagi , Takeshi Koiso , Yuji Yamagata , Kiyofumi Muro
IPC: H01S3/00 , H01S3/08 , H01S5/022 , H01S5/024 , H01S5/0683 , H01S5/10 , H01S5/14 , H01S5/20 , H01S5/223 , H01S5/32 , H01S5/343
CPC classification number: B82Y20/00 , H01S5/02208 , H01S5/02248 , H01S5/02415 , H01S5/02438 , H01S5/0652 , H01S5/0683 , H01S5/1039 , H01S5/146 , H01S5/2009 , H01S5/2231 , H01S5/3211 , H01S5/34313 , H01S2301/02
Abstract: A laser module includes a semiconductor laser element and a feedback optical component forming an external cavity with the semiconductor laser element. Even if a ratio of a current threshold of the laser module changing according to a polarized state of returned light from the feedback optical component to a current threshold of the semiconductor laser element is in an arbitrary range within a predetermined range, a total value of a relative intensity noise occurring between a first frequency determined according to a cavity length of the external cavity and at least equal to or more than a frequency band of using a laser light and a second frequency calculated by multiplying the first frequency by a predetermined number is equal to or more than −40 dB.
Abstract translation: 激光模块包括半导体激光元件和形成具有半导体激光元件的外部空腔的反馈光学元件。 即使根据来自反馈光学分量的返回光的偏振状态改变为半导体激光元件的电流阈值的激光器模块的电流阈值的比例在预定范围内的任意范围内， 在根据外部空腔的腔长度确定的至少等于或大于使用激光的频带的第一频率和通过将第一频率乘以预定数量而计算的第二频率之间产生的相对强度噪声相等 至-40dB以上。
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3.发明申请Semiconductor laser device, semiconductor laser module, and optical fiber amplifier 有权半导体激光器件，半导体激光器模块和光纤放大器公开(公告)号：US20050105845A1
公开(公告)日：2005-05-19
申请号：US11020320
申请日：2004-12-27
Applicant: Yasuo Oeda , Kiyofumi Muro , Michio Okubo
Inventor： Yasuo Oeda , Kiyofumi Muro , Michio Okubo
CPC classification number: H01S5/20 , H01S5/2004
Abstract: A semiconductor laser device includes a layer structure of a first conductive cladding layer, an active layer, and a second conductive cladding layer sequentially grown on a first conductive semiconductor substrate; and a light emitting facet from which a laser beam having a first wavelength is emitted. Refractive indexes of the first and the second conductive cladding layers with respect to the first wavelength are lower than an effective refractive index with respect to the first wavelength. With respect to a light having a second wavelength incident on the light emitting facet from outside, the refractive index of at least one of the first and the second conductive cladding layers is equal to or higher than the effective refractive index with respect to the second wavelength.
Abstract translation: 半导体激光器件包括在第一导电半导体衬底上顺序生长的第一导电覆层，有源层和第二导电覆层的层结构; 以及发射具有第一波长的激光束的发光小面。 第一和第二导电包覆层相对于第一波长的折射率低于相对于第一波长的有效折射率。 对于从外部入射到发光小面上的具有第二波长的光，第一和第二导电包覆层中的至少一个的折射率相对于第二波长的折射率等于或高于有效折射率 。
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公开(公告)号：US5999325A
公开(公告)日：1999-12-07
申请号：US901028
申请日：1992-06-19
Applicant: Akira Eda , Kiyofumi Muro
Inventor： Akira Eda , Kiyofumi Muro
IPC: G02B3/00 , G02B6/124 , G02F1/37 , G03F7/00 , H01S3/05 , H01S3/06 , H01S3/23 , H01S5/10 , H01S5/183 , G02B27/10 , G02B5/08
CPC classification number: H01S3/2383 , G02B3/0012 , G02B3/0018 , G02B3/005 , G02B3/0056 , G02B3/0068 , G02B6/1245 , G02F1/37 , G03F7/0005 , H01S3/0627 , H01S3/0606 , H01S3/0615 , H01S3/0621 , H01S3/0625 , H01S3/08095 , H01S3/09415 , H01S3/2308 , H01S5/0267 , H01S5/18388
Abstract: An optical device includes a block of optical material. The block includes a first and second end face, and a portion of the first end face includes at least one convex arcuate portion.
Abstract translation: 光学装置包括光学材料块。 该块包括第一和第二端面，并且第一端面的一部分包括至少一个凸形弓形部分。
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5.发明授权Semiconductor laser device, semiconductor laser module, and optical fiber amplifier 有权半导体激光器件，半导体激光器模块和光纤放大器公开(公告)号：US07203215B2
公开(公告)日：2007-04-10
申请号：US11020320
申请日：2004-12-27
Applicant: Yasuo Oeda , Kiyofumi Muro , Michio Okubo
Inventor： Yasuo Oeda , Kiyofumi Muro , Michio Okubo
IPC: H01S5/00
CPC classification number: H01S5/20 , H01S5/2004
Abstract: A semiconductor laser device includes a layer structure of a first conductive cladding layer, an active layer, and a second conductive cladding layer sequentially grown on a first conductive semiconductor substrate; and a light emitting facet from which a laser beam having a first wavelength is emitted. Refractive indexes of the first and the second conductive cladding layers with respect to the first wavelength are lower than an effective refractive index with respect to the first wavelength. With respect to a light having a second wavelength incident on the light emitting facet from outside, the refractive index of at least one of the first and the second conductive cladding layers is equal to or higher than the effective refractive index with respect to the second wavelength.
Abstract translation: 半导体激光器件包括在第一导电半导体衬底上顺序生长的第一导电覆层，有源层和第二导电覆层的层结构; 以及发射具有第一波长的激光束的发光小面。 第一和第二导电包覆层相对于第一波长的折射率低于相对于第一波长的有效折射率。 对于从外部入射到发光小面上的具有第二波长的光，第一和第二导电包覆层中的至少一个的折射率相对于第二波长的折射率等于或高于有效折射率 。
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Patent Agency Ranking
公开(公告)号：US06847667B2
公开(公告)日：2005-01-25
申请号：US10802753
申请日：2004-03-18
Applicant: Atsushi Ohkubo , Satoru Okada , Tsuyoshi Fujimoto , Takeshi Koiso , Kiyofumi Muro , Michio Ohkubo , Yutaka Ohki
Inventor： Atsushi Ohkubo , Satoru Okada , Tsuyoshi Fujimoto , Takeshi Koiso , Kiyofumi Muro , Michio Ohkubo , Yutaka Ohki
CPC classification number: B82Y20/00 , H01S5/02208 , H01S5/02284 , H01S5/02415 , H01S5/02438 , H01S5/0652 , H01S5/0656 , H01S5/146 , H01S5/34
Abstract: A semiconductor laser device emitting a laser beam having stable emitting wavelength and a multimode spectrum is provided. The semiconductor laser device is a Fabry-Perot type semiconductor laser device having a layer structure including an active layer of a quantum well structure, and emitting a laser beam having wavelength stabilized by an action of return light and having a multimode spectrum, wherein each well layer satisfies relation: Γ/d≦1.3×10−3 nm−1 where Γ and d(nm) are an optical confinement factor and a thickness of a well layer, respectively.
Abstract translation: 提供了发射具有稳定发射波长和多模光谱的激光束的半导体激光装置。 半导体激光器件是具有包括量子阱结构的有源层的层结构的法布里 - 珀罗型半导体激光器件，并且发射具有通过返回光的作用而具有波长稳定并且具有多模光谱的波长的激光束，其中每个阱 层满足关系：其中Gamma和d（nm）分别是光限制因子和阱层的厚度。
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公开(公告)号：USRE36431E
公开(公告)日：1999-12-07
申请号：US971106
申请日：1997-11-14
Applicant: Kiyofumi Muro , Tsuyoshi Fujimoto , Yuji Yoshida , Yoshikazu Yamada , Shoji Ishizaka
Inventor： Kiyofumi Muro , Tsuyoshi Fujimoto , Yuji Yoshida , Yoshikazu Yamada , Shoji Ishizaka
CPC classification number: H01S5/20 , B82Y20/00 , H01S5/34 , H01S2301/18 , H01S5/2004 , H01S5/2009 , H01S5/3211 , H01S5/32308 , H01S5/3421 , H01S5/3428 , H01S5/3432
Abstract: A semiconductor laser of this invention, having a structure of an element composed of: carrier block layers, formed bilaterally externally of an active layer in section which is formed in the vertical direction from the surface of the element, for reducing a light guiding function of the active layer; wave guide layers provided bilaterally externally of said carrier block layers and clad layers provided so that the wave guide layers are sandwiched in between the clad layers. This invention overcomes a dilemma inherent in the conventional weakly guiding laser and LOC structured laser in terms of designing the device for controlling a guided mode. The present invention also solves the problems in terms of attaining higher outputting and a low dispersion of the radiation beams and improving a beam profile.
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公开(公告)号：US5467364A
公开(公告)日：1995-11-14
申请号：US287802
申请日：1994-08-09
Applicant: Kiyofumi Muro , Tsuyoshi Fujimoto , Yuji Yoshida , Yoshikazu Yamada , Shoji Ishizaka
Inventor： Kiyofumi Muro , Tsuyoshi Fujimoto , Yuji Yoshida , Yoshikazu Yamada , Shoji Ishizaka
CPC classification number: B82Y20/00 , H01S5/20 , H01S5/34 , H01S2301/18 , H01S5/2004 , H01S5/2009 , H01S5/3211 , H01S5/32308 , H01S5/3421 , H01S5/3428 , H01S5/3432
Abstract: A semiconductor laser of this invention, having a structure of an element composed of: carrier block layers, formed bilaterally externally of an active layer in section which is formed in the vertical direction from the surface of the element, for reducing a light guiding function of the active layer; wave guide layers provided bilaterally externally of said carrier block layers and clad layers provided so that the wave guide layers are sandwiched in between the clad layers. This invention overcomes a dilemma inherent in the conventional weakly guiding laser and LOC structured laser in terms of designing the device for controlling a guided mode. The present invention also solves the problems in terms of attaining higher outputting and a low dispersion of the radiation beams and improving a beam profile.
Abstract translation: 本发明的半导体激光器具有由以下部分构成的元件的结构：载体块层，从在元件的表面沿垂直方向形成的截面中的双方形成的有源层的外侧形成，用于降低导光功能 活性层; 在所述载体块层和包层之间的外侧提供波导引导层，使得波导层夹在包层之间。 本发明克服了传统的弱引导激光和LOC结构激光器在设计用于控制引导模式的装置方面的困境。 本发明还解决了获得更高输出和辐射束的低色散并改善光束轮廓的问题。
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公开(公告)号：US4985226A
公开(公告)日：1991-01-15
申请号：US366655
申请日：1989-06-15
Applicant: Shuichi Satoh , Kazuwo Tsuji , Takeru Nakashima , Shuji Yazu , Yosio Nisida , Kiyofumi Muro , Yuzo Demizu , Masuo Nakagawa , Moritami Okada
Inventor： Shuichi Satoh , Kazuwo Tsuji , Takeru Nakashima , Shuji Yazu , Yosio Nisida , Kiyofumi Muro , Yuzo Demizu , Masuo Nakagawa , Moritami Okada
IPC: C30B33/00 , G11B7/0045 , G11B7/0055
CPC classification number: G11B7/0055 , C30B29/04 , C30B33/00 , G11B7/00453
Abstract: A hole-burning material which comprises at least one hole which is formed on a zero-phonone line and semi-permanently lasts without suffering from any change in the temperature range from 2 to 120 K. and which can be erased by irradiation of excited light having an energy larger than the zero-phonone line, in which the burnt holes have long life and deep depth and any single holes can be erased.
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公开(公告)号：US20110032967A1
公开(公告)日：2011-02-10
申请号：US12908592
申请日：2010-10-20
Applicant: Alex A. Behfar , Kiyofumi Muro , Christian B. Stagarescu , Alfred T. Schremer
Inventor： Alex A. Behfar , Kiyofumi Muro , Christian B. Stagarescu , Alfred T. Schremer
CPC classification number: H01S5/0625 , B82Y20/00 , H01S5/0264 , H01S5/06256 , H01S5/0655 , H01S5/1017 , H01S5/1021 , H01S5/1039 , H01S5/125 , H01S5/141 , H01S5/22 , H01S5/343 , H01S5/34313
Abstract: A single-mode, etched facet distributed Bragg reflector laser includes an AlGaInAs/InP laser cavity, a front mirror stack with multiple Fabry-Perot elements, a rear DBR reflector, and a rear detector. The front mirror stack elements and the rear reflector elements include input and output etched facets, and the laser cavity is an etched ridge cavity, all formed from an epitaxial wafer by a two-step lithography and CAIBE process.
Abstract translation: 单模蚀刻刻面分布布拉格反射激光器包括AlGaInAs / InP激光腔，具有多个法布里 - 珀罗元件的前镜叠层，后DBR反射器和后检测器。 前反射镜堆叠元件和后反射器元件包括输入和输出蚀刻刻面，并且激光腔是蚀刻的脊腔，全部由外延晶片通过两步光刻和CAIBE工艺形成。
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