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    Semiconductor laser apparatus
    2.
    发明授权
    Semiconductor laser apparatus 有权
    半导体激光装置

    公开(公告)号：US06546032B1

    公开(公告)日：2003-04-08

    申请号：US09644080

    申请日：2000-08-23

    申请人： Yasuo Oeda ,  Satoru Okada ,  Kouichi Igarashi ,  Yumi Naito ,  Kiyofumi Muro ,  Takeshi Koiso ,  Yoshikazu Yamada ,  Atsushi Okubo ,  Tsuyoshi Fujimoto

    发明人： Yasuo Oeda ,  Satoru Okada ,  Kouichi Igarashi ,  Yumi Naito ,  Kiyofumi Muro ,  Takeshi Koiso ,  Yoshikazu Yamada ,  Atsushi Okubo ,  Tsuyoshi Fujimoto

    IPC分类号： H01S500

    CPC分类号： B82Y20/00 ,  H01S5/20 ,  H01S5/2004 ,  H01S5/2009 ,  H01S5/34313 ,  H01S5/34353

    摘要： On a substrate of n-type GaAs are sequentially formed an n-type cladding layer (AlGaAs, Al content x=0.07, thickness t=2.86 &mgr;m), an n-type optical waveguide layer (GaAs, t=0.49 &mgr;m), an n-type carrier blocking layer (AlGaAs, x=0.40, t=0.03 &mgr;m), an active layer (composed of an In0.18Ga0.82As quantum well layer and a GaAs barrier layer), a p-type carrier blocking layer (AlGaAs, x=0.40, t=0.03 &mgr;m), a p-type optical waveguide layer (GaAs, t=0.49 &mgr;m), a p-type cladding layer (AlGaAs, x=0.20, t=1.08 &mgr;m), and a p-type cap layer (GaAs) in which a pair of n-type current blocking layers (GaAs) are buried. With this construction, the occurrence of a wavelength spit due to a higher-order mode can be inhibited thereby stabilizing a higher power operation.

    摘要翻译： 在n型GaAs衬底上依次形成n型覆层（AlGaAs，Al含量x = 0.07，厚度t =2.86μm），n型光波导层（GaAs，t =0.49μm）， n型载流子阻挡层（AlGaAs，x = 0.40，t =0.03μm），有源层（由In0.18Ga0.82As量子阱层和GaAs势垒层构成），p型载流子阻挡层（AlGaAs ，p型光波导层（GaAs，t =0.49μm），p型覆层（AlGaAs，x = 0.20，t =1.08μm），p型光波导层 封装了一对n型电流阻挡层（GaAs）的封装层（GaAs）。 利用这种结构，可以抑制由高阶模式引起的波长吐出的发生，从而稳定高功率操作。

    Semiconductor laser device
    3.
    发明授权
    Semiconductor laser device 失效
    半导体激光器件

    公开(公告)号：US6118799A

    公开(公告)日：2000-09-12

    申请号：US817602

    申请日：1997-06-10

    申请人： Atsushi Okubo ,  Yoshikazu Yamada ,  Tsuyoshi Fujimoto ,  Satoru Okada ,  Yumi Naito ,  Kiyofumi Muro

    发明人： Atsushi Okubo ,  Yoshikazu Yamada ,  Tsuyoshi Fujimoto ,  Satoru Okada ,  Yumi Naito ,  Kiyofumi Muro

    IPC分类号： H01S5/20 ,  H01S5/22 ,  H01S5/223 ,  H01S5/343 ,  H01S3/085

    CPC分类号： B82Y20/00 ,  H01S5/2231 ,  H01S5/2238 ,  H01S5/204 ,  H01S5/222 ,  H01S5/3432

    摘要： A semiconductor device including a buffer layer 32 on n-GaAs, a clad layer 31, a wave guide layer 30 and a carrier block layer 29 of n-AlGaAs, a side barrier layer 28 of non-doped AlGaAs, an active layer 27 which is formed by two non-doped GaAs quantum well layers and a barrier layer of AlGaAs, a side barrier layer 26 of non-doped AlGaAs, a carrier block layer 25, a wave guide layer 23 and a clad layer 22 of p-AlGaAs, and a cap layer 21 of p-GaAs are grown in this order. Inside the wave guide layer 23, current blocking layers 24 having a lower refractive index and higher Al-composition than that of the wave guide layer and sandwich a strip-shaped active region 34. This creates a refractive index difference between the active region 34 and buried regions 33 in which each of the current blocking layers 24 exists, thereby forming a refractive index guide structure. Thus, it is possible to obtain a high-output semiconductor laser device of the refractive index guided type which is easy to manufacture.

    摘要翻译： PCT No.PCT / JP95 / 02118 Sec。 371日期：1997年6月10日 102（e）日期1997年6月10日PCT提交1995年10月16日PCT公布。 WO96 / 12328 PCT出版物 日期：1996年04月25日包括n-GaAs上的缓冲层32，n-AlGaAs的覆盖层31，波导层30和载流子层29的半导体器件，非掺杂AlGaAs的侧面阻挡层28， 由两个非掺杂GaAs量子阱层和AlGaAs的势垒层，非掺杂AlGaAs的侧阻层26，载流子阻挡层25，波导层23和覆盖层22形成的有源层27 的p-AlGaAs，并且p-GaAs的覆盖层21依次生长。 在波导层23内，电流阻挡层24具有比波导层低的折射率和更高的Al组分，并且夹持条形有源区域34.这在活性区域34和 其中存在每个电流阻挡层24的埋入区域33，从而形成折射率引导结构。 因此，可以获得易于制造的折射率导向型的高输出半导体激光器件。

    Semiconductor laser device, semiconductor laser module, rare-earth-element-doped optical fiber amplifier and fiber laser
    4.
    发明授权
    Semiconductor laser device, semiconductor laser module, rare-earth-element-doped optical fiber amplifier and fiber laser 有权
    半导体激光器件，半导体激光器模块，稀土元素掺杂光纤放大器和光纤激光器

    公开(公告)号：US06477191B1

    公开(公告)日：2002-11-05

    申请号：US09538728

    申请日：2000-03-30

    申请人： Satoru Okada ,  Tsuyoshi Fujimoto ,  Yasuo Oeda

    发明人： Satoru Okada ,  Tsuyoshi Fujimoto ,  Yasuo Oeda

    IPC分类号： H01S500

    CPC分类号： H01S5/12

    摘要： A semiconductor laser device includes: an active layer; upper waveguide layers and a lower waveguide layer sandwiching the active layer therebetween; upper and lower cladding layers sandwiching the active layer and the upper and lower waveguide layers therebetween; and a current-narrowing layer defining a current-injection region for injecting current to the active layer, wherein a diffraction grating having a periodical structure in a resonance cavity direction is buried in any one of the waveguide layers, the diffraction grating being present in at least a part of the current-injection region; and the waveguide layer in which the diffraction grating is buried and the cladding layer adjoining to that waveguide layer forms an interface which is substantially flat in the resonance cavity direction. With the constitution, a waveguide structure which has a diffraction grating offering a higher flexibility in design and manufacture in terms of the coupling efficiency is realized, thereby easily providing a dynamic single-mode semiconductor laser device with higher reproducibility, yield and reliability.

    摘要翻译： 半导体激光器件包括：有源层; 上波导层和夹在其间的有源层的下波导层; 夹层有源层和上下波导层的上下包层; 以及限定用于向有源层注入电流的电流注入区域的电流变窄层，其中在谐振腔方向上具有周期性结构的衍射光栅被掩埋在任何一个波导层中，衍射光栅存在于 电流注入区域的至少一部分; 并且其中掩埋衍射光栅的波导层和与该波导层相邻的包层形成在谐振腔方向上基本上平坦的界面。 利用该结构，实现了在耦合效率方面具有在设计和制造中具有较高灵活性的衍射光栅的波导结构，由此容易地提供具有更高再现性，产率和可靠性的动态单模半导体激光器件。

    Semiconductor laser device
    5.
    发明授权
    Semiconductor laser device 有权
    半导体激光器件

    公开(公告)号：US06285699B1

    公开(公告)日：2001-09-04

    申请号：US09163395

    申请日：1998-09-30

    申请人： Yumi Naito ,  Satoru Okada ,  Tsuyoshi Fujimoto

    发明人： Yumi Naito ,  Satoru Okada ,  Tsuyoshi Fujimoto

    IPC分类号： H01S500

    CPC分类号： B82Y20/00 ,  H01S5/12 ,  H01S5/2231 ,  H01S5/3432

    摘要： On an n-GaAs substrate are sequentially formed an n-GaAs buffer layer, an n-AlGaAs cladding layer, a non-doped InGaAs active layer, a p-AlxGa1−xAs cladding layer, a p-GaAs contact layer, and further an n-AlGaAs current blocking layer having a stripe-like window is embedded in the cladding layer. At the active layer side interface of the current blocking layer, a diffraction grating of cyclic bumps and dips shape is formed, but the diffraction grating is not formed in a region of the stripe-like window where the current blocking layer is not present, i.e., a current injection region. In this way, a semiconductor laser device of low oscillation threshold, high oscillation efficiency, high reliability, long life time, and stabilized oscillation wavelength can be realized.

    摘要翻译： 在n-GaAs衬底上依次形成n-GaAs缓冲层，n-AlGaAs覆层，非掺杂InGaAs有源层，p-Al x Ga 1-x As包层，p-GaAs接触层， 具有条状窗口的n-AlGaAs电流阻挡层嵌入包层中。 在电流阻挡层的有源层侧界面，形成了循环凸起和凹陷形状的衍射光栅，但是衍射光栅不形成在不存在电流阻挡层的条状窗口的区域中，即 ，电流注入区域。 以这种方式，可以实现低振荡阈值，高振荡效率，高可靠性，长寿命和稳定的振荡波长的半导体激光器件。

    Membrane Treatment Method and Membrane Treatment Apparatus for Ballast Water Using Membrane Module
    6.
    发明申请
    Membrane Treatment Method and Membrane Treatment Apparatus for Ballast Water Using Membrane Module 有权
    使用膜模块的压载水膜处理方法和膜处理装置

    公开(公告)号：US20100163413A1

    公开(公告)日：2010-07-01

    申请号：US12294666

    申请日：2007-03-28

    申请人： Masahiro Saito ,  Gaku Taniguchi ,  Taishi Sato ,  Satoru Okada

    发明人： Masahiro Saito ,  Gaku Taniguchi ,  Taishi Sato ,  Satoru Okada

    IPC分类号： C02F1/469

    CPC分类号： B01D61/425 ,  B01D61/147 ,  B01D61/16 ,  B01D65/08 ,  B01D2311/04 ,  B01D2313/345 ,  B01D2321/22 ,  B01D2321/223 ,  B63J4/002 ,  C02F1/444 ,  C02F1/4672 ,  C02F1/469 ,  C02F5/00 ,  C02F2103/008 ,  B01D2311/2603

    摘要： [Problem] To provide a membrane treatment method and a membrane treatment apparatus for ballast water using a membrane module, which are capable of inhibiting the formation of scale on the membrane surface to reduce fouling, using a simple installation.[Means for Solving the Problem] The membrane treatment method and the membrane treatment apparatus for ballast water using a membrane module according to the invention, having a membrane treatment tank 2 and a membrane module 1 provided in the tank for continuously performing filtration while ballast water is being passed thereto as raw water; wherein a positive electrode and a negative electrode are provided in the membrane treatment tank 2 so as to come into contact with raw water in the tank, and a current passing means is provided in the tank for applying a voltage between the electrodes.

    摘要翻译： 本发明提供使用膜组件的膜处理方法和膜处理装置，该膜组件能够通过简单的装置抑制膜表面上的氧化皮形成以减少结垢。 解决问题的方法使用本发明的膜组件的膜处理方法和压膜水处理装置，具有膜处理槽2和膜组件1，该膜组件1设置在罐中，用于连续地进行过滤，同时压载水 正在作为原水传递; 其特征在于，在所述膜处理槽2中设置正极和负极以与所述槽中的原水接触，并且在所述槽中设置电流通过装置，用于在所述电极之间施加电压。

    Electronic apparatus having game and telephone functions
    8.
    发明授权
    Electronic apparatus having game and telephone functions 有权
    具有游戏和电话功能的电子设备

    公开(公告)号：US07069044B2

    公开(公告)日：2006-06-27

    申请号：US09994914

    申请日：2001-11-27

    申请人： Satoru Okada ,  Masahiro Ishizuka ,  Takuma Matsunada ,  Tsuyoshi Kiyuna

    发明人： Satoru Okada ,  Masahiro Ishizuka ,  Takuma Matsunada ,  Tsuyoshi Kiyuna

    IPC分类号： H04M1/00

    CPC分类号： A63F13/22 ,  A63F13/10 ,  A63F13/42 ,  A63F13/493 ,  A63F2300/204 ,  A63F2300/406 ,  A63F2300/6045 ,  A63F2300/636 ,  A63F2300/638 ,  H04M1/72544 ,  H04M1/72597

    摘要： An electronic apparatus includes a phone CPU and a game CPU. When a * key is operated during execution of a game, the phone CPU sets a specified bit of a game key register to “1”. The phone CPU is set “1” into the specified bit when there is an incoming call of a phone during the execution of the game. The game CPU pauses the game being in execution when the specified bit is renewed to “1” and restores the specified bit from “1” to “0”. When the * key is operated in a state the game is interrupted, the phone CPU sets “1” into the specified bit. The game CPU restarts the game by canceling the pause.

    摘要翻译： 电子设备包括电话CPU和游戏CPU。 在执行游戏时操作*键时，手机CPU将游戏键寄存器的指定位设定为“1”。 在游戏执行过程中有电话来电时，手机CPU设置为“1”。 当指定的位更新为“1”并将指定的位从“1”恢复为“0”时，游戏CPU会暂停正在执行的游戏。 当*键在游戏中断的状态下操作时，手机CPU将“1”设置为指定的位。 游戏CPU通过取消暂停重新启动游戏。

    Control valve and method of making the same
    9.
    发明授权
    Control valve and method of making the same 失效
    控制阀及其制作方法

    公开(公告)号：US06971629B2

    公开(公告)日：2005-12-06

    申请号：US10627382

    申请日：2003-07-25

    申请人： Satoru Okada ,  Takayuki Sakai ,  Takaaki Ichikawa

    发明人： Satoru Okada ,  Takayuki Sakai ,  Takaaki Ichikawa

    IPC分类号： F16K17/06 ,  F04B27/18 ,  F16K31/06

    CPC分类号： F16K31/0655 ,  F04B27/1804 ,  F04B2027/1827 ,  F04B2027/184 ,  F16K31/0665

    摘要： A control valve is disclosed in which a direct-moved shaft having one end abutted against a diaphragm is direct moved according to deformation of the diaphragm so that a valve element mounted on the other end of the direct-moved shaft is adhered to and separated from an opening edge of a passage, thereby controlling a flow rate of a fluid passing through the passage. The control valve includes a first body enclosing the direct-moved shaft, a second body enclosing the diaphragm, a compressive elastic member deformed when the second body is pressed against the first body, and a holder for holding the second body on the first body while the compressive elastic member is deformed by compression.

    摘要翻译： 公开了一种控制阀，其中具有一个端部抵靠隔膜的直接移动轴根据隔膜的变形直接移动，使得安装在直接移动轴的另一端上的阀元件被粘附并分离 通道的开口边缘，从而控制通过通道的流体的流量。 所述控制阀包括包围所述直接移动轴的第一主体，包围所述隔膜的第二主体，当所述第二主体被压靠在所述第一主体上时变形的压缩弹性部件，以及用于将所述第二主体保持在所述第一主体上的保持件， 压缩弹性构件通过压缩而变形。