公开(公告)号：US08255239B2

公开(公告)日：2012-08-28

申请号：US11348682

申请日：2006-02-07

申请人： Catrin Lüll ,  John Sanchez ,  Sandra Sodilo

发明人： Catrin Lüll ,  John Sanchez ,  Sandra Sodilo

IPC分类号： G06Q10/00

CPC分类号： G06F19/321 ,  G06F19/00 ,  G16H15/00

摘要： In an access controller and method for controlling access to medical data, the medical data being provided as at least one first file and a second file independent of the first file with findings regarding patients that are generated by medical personnel being stored in the first file and measurement results of patients that were acquired by means of a medical-technical apparatus being stored in the second file, with at least one subset of the measurement results stored in the second file forming the basis of at least a subset of the findings stored in the first file, the access controller is configured to detect the measurement results forming the basis of a stored finding. Links to the measurement results forming the basis of a respective finding are stored at the findings in the first file and the access controller is configured to automatically detect measurement results stored in the second file and form the basis of a finding, the automatic detection ensuing using the link stored at the respective finding in the first file.

摘要翻译： 在用于控制对医疗数据的访问的访问控制器和方法中，医疗数据被提供为至少一个第一文件和独立于第一文件的第二文件，其中关于由医务人员生成的患者的发现存储在第一文件中， 通过存储在第二文件中的医疗技术装置获取的患者的测量结果，存储在第二文件中的测量结果的至少一个子集形成存储在第二文件中的发现的至少一个子集的基础 第一文件，访问控制器被配置为检测形成存储发现的基础的测量结果。 构成相应发现基础的测量结果的链接存储在第一文件中的发现上，并且访问控制器被配置为自动检测存储在第二文件中的测量结果并形成发现的基础，随后使用的自动检测 存储在第一文件中的相应发现的链接。

公开(公告)号：US20090045390A1

公开(公告)日：2009-02-19

申请号：US12286723

申请日：2008-10-01

申请人： Darrel Rinerson ,  Wayne Kinney ,  Edmond R. Ward ,  Steve Kuo-Ren Hsia ,  Steven W. Longcor ,  Christophe J. Chevallier ,  John Sanchez ,  Philip F. S. Swab

发明人： Darrel Rinerson ,  Wayne Kinney ,  Edmond R. Ward ,  Steve Kuo-Ren Hsia ,  Steven W. Longcor ,  Christophe J. Chevallier ,  John Sanchez ,  Philip F. S. Swab

IPC分类号： H01L45/00

CPC分类号： H01L27/2463 ,  G11C11/16 ,  G11C11/5685 ,  G11C13/0002 ,  G11C13/0007 ,  G11C13/004 ,  G11C13/0069 ,  G11C13/0097 ,  G11C2013/009 ,  G11C2213/15 ,  G11C2213/31 ,  G11C2213/32 ,  G11C2213/71 ,  G11C2213/77 ,  G11C2213/79 ,  H01L27/24 ,  H01L27/2481 ,  H01L45/04 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/1253 ,  H01L45/146 ,  H01L45/147 ,  H01L45/1633 ,  H01L45/1658

摘要： A memory cell including conductive oxide electrodes is disclosed. The memory cell includes a memory element operative to store data as a plurality of resistive states. The memory element includes a layer of a conductive metal oxide (CMO) (e.g., a perovskite) in contact with an electrode that may comprise one or more layers of material. At least one of those layers of material can be a conductive oxide (e.g., a perovskite such as LaSrCoO3—LSCoO or LaNiO3—LNO) that is in contact with the CMO. The conductive oxide layer can be selected as a seed layer operative to provide a good lattice match with and/or a lower crystallization temperature for the CMO. The conductive oxide layer may also be in contact with a metal layer (e.g., Pt). The memory cell additionally exhibits non-linear IV characteristics, which can be favorable in certain arrays, such as non-volatile two-terminal cross-point memory arrays.

公开(公告)号：US20050022176A1

公开(公告)日：2005-01-27

申请号：US10626205

申请日：2003-07-24

申请人： Puthukode Ramachandran ,  John Sanchez ,  Lorin Ullmann ,  Mark Williams

发明人： Puthukode Ramachandran ,  John Sanchez ,  Lorin Ullmann ,  Mark Williams

IPC分类号： G06F9/44

CPC分类号： G06F8/65 ,  G06F9/44505

摘要： The present invention provides a method, apparatus, and computer instructions for testing compatibility of software versions, the method comprising the computer implemented steps of performing an inventory on an existing set of software modules resident in the data processing system responsive to an installation of a new software module in a data processing system; referring to a knowledge base of versions of respective software modules to determine whether the new software module is compatible with the existing set of software modules; and testing the new software module in a test data processing system in combination with the existing set of software modules in response to a negative determination.

摘要翻译： 本发明提供了一种用于测试软件版本的兼容性的方法，装置和计算机指令，所述方法包括计算机实现的步骤，用于响应于新的安装的数据处理系统驻留在现有的一组软件模块上执行库存 数据处理系统中的软件模块; 参考相应软件模块的版本的知识库，以确定新的软件模块是否与现有的一组软件模块兼容; 并且在测试数据处理系统中结合现有的一组软件模块来测试新的软件模块以响应否定的确定。

公开(公告)号：US20120033481A1

公开(公告)日：2012-02-09

申请号：US13272985

申请日：2011-10-13

申请人： DARRELL RINERSON ,  WAYNE KINNEY ,  EDMOND R. WARD ,  STEVE KUO-REN HSIA ,  STEVEN LONGCOR ,  CHRISTOPHE J. CHEVALLIER ,  JOHN SANCHEZ ,  PHILIP F. S. SWAB

发明人： DARRELL RINERSON ,  WAYNE KINNEY ,  EDMOND R. WARD ,  STEVE KUO-REN HSIA ,  STEVEN LONGCOR ,  CHRISTOPHE J. CHEVALLIER ,  JOHN SANCHEZ ,  PHILIP F. S. SWAB

IPC分类号： G11C11/00

CPC分类号： H01L27/2463 ,  G11C11/16 ,  G11C11/5685 ,  G11C13/0002 ,  G11C13/0007 ,  G11C13/004 ,  G11C13/0069 ,  G11C13/0097 ,  G11C2013/009 ,  G11C2213/15 ,  G11C2213/31 ,  G11C2213/32 ,  G11C2213/71 ,  G11C2213/77 ,  G11C2213/79 ,  H01L27/24 ,  H01L27/2481 ,  H01L45/04 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/1253 ,  H01L45/146 ,  H01L45/147 ,  H01L45/1633 ,  H01L45/1658

摘要： A memory cell including conductive oxide electrodes is disclosed. The memory cell includes a memory element operative to store data as a plurality of resistive states. The memory element includes a layer of a conductive metal oxide (CMO) (e.g., a perovskite) in contact with an electrode that may comprise one or more layers of material. At least one of those layers of material can be a conductive oxide (e.g., a perovskite such as LaSrCoO3—LSCoO or LaNiO3—LNO) that is in contact with the CMO. The conductive oxide layer can be selected as a seed layer operative to provide a good lattice match with and/or a lower crystallization temperature for the CMO. The conductive oxide layer may also be in contact with a metal layer (e.g., Pt). The memory cell additionally exhibits non-linear IV characteristics, which can be favorable in certain arrays, such as non-volatile two-terminal cross-point memory arrays.

摘要翻译： 公开了一种包括导电氧化物电极的存储单元。 存储单元包括用于将数据存储为多个电阻状态的存储元件。 存储元件包括与可包括一层或多层材料的电极接触的导电金属氧化物（CMO）（例如，钙钛矿）层。 这些材料层中的至少一层可以是与CMO接触的导电氧化物（例如，诸如LaSrCoO3-LSCoO或LaNiO3-LNO的钙钛矿）。 可以选择导电氧化物层作为晶种层，以为CMO提供良好的晶格匹配和/或较低的结晶温度。 导电氧化物层也可以与金属层（例如Pt）接触。 存储单元还具有非线性IV特性，这在某些阵列中是有利的，例如非易失性两端交叉点存储阵列。

公开(公告)号：US20100157657A1

公开(公告)日：2010-06-24

申请号：US12653486

申请日：2009-12-14

申请人： Darrell Rinerson ,  Wayne Kinney ,  Edmond R. Ward ,  Steve Kuo-Ren Hsia ,  Steven W. Longcor ,  Christophe J. Chevallier ,  John Sanchez ,  Philip F.S. Swab

发明人： Darrell Rinerson ,  Wayne Kinney ,  Edmond R. Ward ,  Steve Kuo-Ren Hsia ,  Steven W. Longcor ,  Christophe J. Chevallier ,  John Sanchez ,  Philip F.S. Swab

IPC分类号： G11C11/00

CPC分类号： H01L27/2463 ,  G11C11/16 ,  G11C11/5685 ,  G11C13/0002 ,  G11C13/0007 ,  G11C13/004 ,  G11C13/0069 ,  G11C13/0097 ,  G11C2013/009 ,  G11C2213/15 ,  G11C2213/31 ,  G11C2213/32 ,  G11C2213/71 ,  G11C2213/77 ,  G11C2213/79 ,  H01L27/24 ,  H01L27/2481 ,  H01L45/04 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/1253 ,  H01L45/146 ,  H01L45/147 ,  H01L45/1633 ,  H01L45/1658

摘要： A memory cell including conductive oxide electrodes is disclosed. The memory cell includes a memory element operative to store data as a plurality of resistive states. The memory element includes a layer of a conductive metal oxide (CMO) (e.g., a perovskite) in contact with an electrode that may comprise one or more layers of material. At least one of those layers of material can be a conductive oxide (e.g., a perovskite such as LaSrCoO3-LSCoO or LaNiO3-LNO) that is in contact with the CMO. The conductive oxide layer can be selected as a seed layer operative to provide a good lattice match with and/or a lower crystallization temperature for the CMO. The conductive oxide layer may also be in contact with a metal layer (e.g., Pt). The memory cell additionally exhibits non-linear IV characteristics, which can be favorable in certain arrays, such as non-volatile two-terminal cross-point memory arrays.

摘要翻译： 公开了一种包括导电氧化物电极的存储单元。 存储单元包括用于将数据存储为多个电阻状态的存储元件。 存储元件包括与可包括一层或多层材料的电极接触的导电金属氧化物（CMO）（例如，钙钛矿）层。 这些材料层中的至少一层可以是与CMO接触的导电氧化物（例如，诸如LaSrCoO3-LSCoO或LaNiO3-LNO的钙钛矿）。 可以选择导电氧化物层作为晶种层，以为CMO提供良好的晶格匹配和/或较低的结晶温度。 导电氧化物层也可以与金属层（例如Pt）接触。 存储单元还具有非线性IV特性，这在某些阵列中是有利的，例如非易失性两端交叉点存储阵列。

公开(公告)号：US20080293196A1

公开(公告)日：2008-11-27

申请号：US12215958

申请日：2008-06-30

申请人： Darrell Rinerson ,  Wayne Kinney ,  Edmond R. Ward ,  Steve Kuo-Ren Hsia ,  Steven W. Longcor ,  Christophe J. Chevallier ,  John Sanchez ,  Philip F.S. Swab

发明人： Darrell Rinerson ,  Wayne Kinney ,  Edmond R. Ward ,  Steve Kuo-Ren Hsia ,  Steven W. Longcor ,  Christophe J. Chevallier ,  John Sanchez ,  Philip F.S. Swab

IPC分类号： H01L21/8244

CPC分类号： H01L27/2463 ,  G11C11/16 ,  G11C11/5685 ,  G11C13/0002 ,  G11C13/0007 ,  G11C13/004 ,  G11C13/0069 ,  G11C13/0097 ,  G11C2013/009 ,  G11C2213/15 ,  G11C2213/31 ,  G11C2213/32 ,  G11C2213/71 ,  G11C2213/77 ,  G11C2213/79 ,  H01L27/24 ,  H01L27/2481 ,  H01L45/04 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/1253 ,  H01L45/146 ,  H01L45/147 ,  H01L45/1633 ,  H01L45/1658

摘要： A treated conductive element is provided. A conductive element can be treated by depositing either a reactive metal or a very thin layer of material on the conductive element. The reactive metal (or very thin layer of material) would typically be sandwiched between the conductive element and an electrode. The structure additionally exhibits non-linear IV characteristics, which can be favorable in certain arrays.

摘要翻译： 提供经处理的导电元件。 可以通过在导电元件上沉积反应性金属或非常薄的材料层来处理导电元件。 反应性金属（或非常薄的材料层）通常将夹在导电元件和电极之间。 该结构还具有非线性IV特性，这在某些阵列中是有利的。

公开(公告)号：US20060249997A1

公开(公告)日：2006-11-09

申请号：US11484038

申请日：2006-07-11

申请人： John Sanchez

发明人： John Sanchez

IPC分类号： A47C31/00

CPC分类号： A47D13/02

摘要： A car seat carrier includes a belt for holding the car seat and a shoulder strap attached to the belt for carrying the car seat. The belt resides around the base of the car seat. A first end of the shoulder strap attaches to a center point of a first belt end. A cross-strap crosses over the car seat, attaching to opposite sides of the belt near a second belt end, and is connected to a second end of the shoulder strap by a sliding buckle. The belt is preferably a fixed length belt which fits most car seats. The shoulder strap may further include padding to increase comfort and may be adjustable in length.

摘要翻译： 汽车座椅支架包括用于保持汽车座椅的皮带和附着在皮带上用于承载汽车座椅的肩带。 皮带位于汽车座椅的底座周围。 肩带的第一端附接到第一皮带端的中心点。 交叉带穿过汽车座椅，靠近皮带的相对侧靠近第二皮带端，并且通过滑动带扣连接到肩带的第二端。 该皮带优选为适合大部分汽车座椅的固定长度皮带。 肩带还可以包括填充物以增加舒适度并且可以在长度上调整。

公开(公告)号：US20060245243A1

公开(公告)日：2006-11-02

申请号：US11473005

申请日：2006-06-22

申请人： Darrell Rinerson ,  Wayne Kinney ,  Edmond Ward ,  Steve Hsia ,  Steven Longcor ,  Christophe Chevallier ,  John Sanchez ,  Philip Swab

发明人： Darrell Rinerson ,  Wayne Kinney ,  Edmond Ward ,  Steve Hsia ,  Steven Longcor ,  Christophe Chevallier ,  John Sanchez ,  Philip Swab

IPC分类号： G11C11/14

CPC分类号： H01L27/2463 ,  G11C11/16 ,  G11C11/5685 ,  G11C13/0002 ,  G11C13/0007 ,  G11C13/004 ,  G11C13/0069 ,  G11C13/0097 ,  G11C2013/009 ,  G11C2213/15 ,  G11C2213/31 ,  G11C2213/32 ,  G11C2213/71 ,  G11C2213/77 ,  G11C2213/79 ,  H01L27/24 ,  H01L27/2481 ,  H01L45/04 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/1253 ,  H01L45/146 ,  H01L45/147 ,  H01L45/1633 ,  H01L45/1658

摘要： A treated conductive element is provided. A conductive element can be treated by depositing either a reactive metal or a very thin layer of material on the conductive element. The reactive metal (or very thin layer of material) would typically be sandwiched between the conductive element and an electrode. The structure additionally exhibits non-linear IV characteristics, which can be favorable in certain arrays.

公开(公告)号：US20060171200A1

公开(公告)日：2006-08-03

申请号：US11095026

申请日：2005-03-30

申请人： Darrell Rinerson ,  Christophe Chevallier ,  Wayne Kinney ,  Roy Lambertson ,  Steven Longcor ,  John Sanchez ,  Lawrence Schloss ,  Philip Swab ,  Edmond Ward

发明人： Darrell Rinerson ,  Christophe Chevallier ,  Wayne Kinney ,  Roy Lambertson ,  Steven Longcor ,  John Sanchez ,  Lawrence Schloss ,  Philip Swab ,  Edmond Ward

IPC分类号： G11C11/34

CPC分类号： H01L45/08 ,  G06F17/5045 ,  G11C11/5685 ,  G11C13/0007 ,  G11C13/0009 ,  G11C13/004 ,  G11C13/0069 ,  G11C2013/0045 ,  G11C2013/005 ,  G11C2013/009 ,  G11C2213/11 ,  G11C2213/31 ,  G11C2213/32 ,  G11C2213/53 ,  G11C2213/54 ,  G11C2213/56 ,  G11C2213/71 ,  G11C2213/79 ,  H01L27/2436 ,  H01L27/2481 ,  H01L45/085 ,  H01L45/1233 ,  H01L45/1246 ,  H01L45/1253 ,  H01L45/146 ,  H01L45/147 ,  H01L45/1625

摘要： A memory using a mixed valence conductive oxides. The memory includes a mixed valence conductive oxide that is less conductive in its oxygen deficient state and a mixed electronic ionic conductor that is an electrolyte to oxygen and promotes an electric field effective to cause oxygen ionic motion.

摘要翻译： 使用混合价态导电氧化物的记忆。 存储器包括在其缺氧状态下导电性较差的混合价态导电氧化物和作为电解质的氧的混合电子离子导体并且促进有效引起氧离子运动的电场。

公开(公告)号：US20060158998A1

公开(公告)日：2006-07-20

申请号：US11037971

申请日：2005-01-18

申请人： Darrell Rinerson ,  Christophe Chevallier ,  John Sanchez ,  Lawrence Schloss

发明人： Darrell Rinerson ,  Christophe Chevallier ,  John Sanchez ,  Lawrence Schloss

IPC分类号： G11B9/00

CPC分类号： G11B9/08 ,  B82Y10/00 ,  G11B9/1445

摘要： A movable terminal in a two terminal memory array. A storage medium is disposed between two terminals, one of the terminals being movable relative to the second terminal. Either one of the terminals or both terminals might actually move, resulting in one terminal being moved relative to the other terminal. A memory element disposed between the two terminals has a conductance that is responsive to a write voltage across the electrodes.

摘要翻译： 二端存储器阵列中的可动端子。 存储介质设置在两个端子之间，其中一个端子可相对于第二端子移动。 终端或两个终端中的任一个可能实际上移动，导致一个终端相对于另一个终端移动。 设置在两个端子之间的存储元件具有响应电极两端的写入电压的电导。