公开(公告)号：US08711600B2

公开(公告)日：2014-04-29

申请号：US13423520

申请日：2012-03-19

Applicant: Karthik Venkataraman ,  Jagadeesh S. Moodera

Inventor： Karthik Venkataraman ,  Jagadeesh S. Moodera

IPC: G11C11/22

CPC classification number: G11B5/02 ,  G11B5/64 ,  G11B5/65 ,  G11B5/746 ,  G11B9/04 ,  G11B9/149 ,  G11B2005/0002 ,  G11C11/161 ,  G11C11/1675 ,  G11C13/0014 ,  H01F10/005 ,  H01F10/3254 ,  H01F41/325

Abstract: A memory element is provided that includes a ferromagnetic (FM) layer having one or more ferromagnetic materials. One or more first molecule layers are positioned on the FM layer where charge transfer and interface chemistry between the one or more first molecule layers and FM layer induces a magnetic moment in the one or more first molecule layers. The magnetic moment is stored in the one or more first molecule layers acting as bit information that is retained or written into the one or more first molecule layers. One or more spin-filter layers are positioned on the one or more first molecule layers. The one or more spin-filter layers are positioned on the one or more spin-filter layers to form a physical or a chemical π-dimer layer structure.

Abstract translation: 提供了一种存储元件，其包括具有一个或多个铁磁材料的铁磁（FM）层。 一个或多个第一分子层位于FM层上，其中一个或多个第一分子层和FM层之间的电荷转移和界面化学在一个或多个第一分子层中诱导磁矩。 磁矩存储在作为保留或写入一个或多个第一分子层的位信息的一个或多个第一分子层中。 一个或多个自旋过滤层位于一个或多个第一分子层上。 一个或多个自旋过滤器层定位在一个或多个自旋过滤器层上以形成物理或化学和化合物层结构。

公开(公告)号：US07741634B2

公开(公告)日：2010-06-22

申请号：US12055593

申请日：2008-03-26

Applicant: Heejae Shim ,  Jagadeesh S. Moodera

Inventor： Heejae Shim ,  Jagadeesh S. Moodera

IPC: H01L23/48 ,  H01L29/08 ,  H01L21/00

CPC classification number: H01L39/226 ,  H01L39/2493

Abstract: A Josephson junction (JJ) device includes a buffered substrate comprising a first buffer layer formed on a substrate. A second buffer layer is formed on the first buffer layer. The second buffer layer includes a hexagonal compound structure. A trilayer structure is formed on the buffered substrate comprising at least two layers of a superconducting material. A thin tunnel barrier layer is positioned between the at least two layers. The buffered substrate is used to minimize lattice mismatch and interdiffusion in the trilayer structure so as to allow the JJ device to operate above 20 K.

Abstract translation: 约瑟夫逊结（JJ）器件包括缓冲衬底，其包括形成在衬底上的第一缓冲层。 在第一缓冲层上形成第二缓冲层。 第二缓冲层包括六边形复合结构。 在缓冲衬底上形成三层结构，其包括至少两层超导材料。 薄的隧道势垒层位于至少两层之间。 缓冲衬底用于最小化三层结构中的晶格失配和相互扩散，从而允许JJ器件在20K以上的工作。

公开(公告)号：US20090247410A1

公开(公告)日：2009-10-01

申请号：US12055593

申请日：2008-03-26

Applicant: Heejae Shim ,  Jagadeesh S. Moodera

Inventor： Heejae Shim ,  Jagadeesh S. Moodera

IPC: H01L39/22 ,  H01L39/24

CPC classification number: H01L39/226 ,  H01L39/2493

Abstract: A Josephson junction (JJ) device includes a buffered substrate comprising a first buffer layer formed on a substrate. A second buffer layer is formed on the first buffer layer. The second buffer layer includes a hexagonal compound structure. A trilayer structure is formed on the buffered substrate comprising at least two layers of a superconducting material. A thin tunnel barrier layer is positioned between the at least two layers. The buffered substrate is used to minimize lattice mismatch and interdiffusion in the trilayer structure so as to allow the JJ device to operate above 20 K. 12

Abstract translation: 约瑟夫逊结（JJ）器件包括缓冲衬底，其包括形成在衬底上的第一缓冲层。 在第一缓冲层上形成第二缓冲层。 第二缓冲层包括六边形复合结构。 在缓冲衬底上形成三层结构，其包括至少两层超导材料。 薄的隧道势垒层位于至少两层之间。 缓冲衬底用于最小化三层结构中的晶格失配和相互扩散，从而允许JJ器件在20K以上的工作。

公开(公告)号：US20140062530A1

公开(公告)日：2014-03-06

申请号：US13044045

申请日：2011-03-09

Applicant: Guo-Xing Miao ,  Jagadeesh S. Moodera

Inventor： Guo-Xing Miao ,  Jagadeesh S. Moodera

IPC: G11C11/16 ,  H01L43/12

CPC classification number: G11C11/16 ,  G11C11/161 ,  G11C11/1675 ,  H01L43/08 ,  H01L43/12

Abstract: A magnetic memory cell is provided that includes a free layer that is pinned on both of its sides to form one or more domain wall structures. The one or more domain wall structures define one or more logic states by controlling the motion of the one or more domain wall structures.

Abstract translation: 提供了一种磁存储器单元，其包括被固定在其两侧上的自由层以形成一个或多个畴壁结构。 一个或多个畴壁结构通过控制一个或多个畴壁结构的运动来定义一个或多个逻辑状态。

公开(公告)号：US20090141409A1

公开(公告)日：2009-06-04

申请号：US11949208

申请日：2007-12-03

Applicant: Tiffany S. Santos ,  Jagadeesh S. Moodera

Inventor： Tiffany S. Santos ,  Jagadeesh S. Moodera

IPC: G11B5/127

CPC classification number: H01L29/66984 ,  H01L29/0843 ,  H01L29/0895 ,  H01L29/51 ,  H01L29/778

Abstract: A spin filter transistor having a semiconductor structure. A spin injector including a first spin filter tunnel barrier is positioned on the semiconductor structure. A spin detector including a second spin filter tunnel barrier is positioned on the semiconductor. Highly polarized spins injected from the spin injector are transported through the semiconductor structure, and are detected at the spin detector. The magnitude of the spin current depends on the relative magnetic alignment of the first spin filter tunnel barrier and the second spin filter tunnel barrier.

Abstract translation: 具有半导体结构的自旋滤波器晶体管。 包括第一自旋过滤器隧道势垒的自旋注入器位于半导体结构上。 包括第二自旋滤波器隧道势垒的自旋检测器位于半导体上。 从旋转喷射器喷射的高度极化的自旋被传送通过半导体结构，并且在旋转检测器处被检测。 自旋电流的大小取决于第一自旋滤波器隧道势垒和第二自旋滤波器隧道势垒的相对磁性取向。

公开(公告)号：US5629922A

公开(公告)日：1997-05-13

申请号：US407761

申请日：1995-03-21

Applicant: Jagadeesh S. Moodera ,  Terrilyn Wong ,  Lisa Kinder ,  Robert H. Meservey

Inventor： Jagadeesh S. Moodera ,  Terrilyn Wong ,  Lisa Kinder ,  Robert H. Meservey

IPC: G01R33/09 ,  G11B5/00 ,  G11B5/012 ,  G11B5/33 ,  G11B11/10 ,  G11C11/15 ,  H01L43/08 ,  G11B9/00 ,  H01L27/22

CPC classification number: B82Y25/00 ,  G01R33/093 ,  G11B11/10 ,  G11B5/00 ,  G11B5/012 ,  G11B5/33 ,  G11C11/15 ,  H01L43/08

Abstract: Ferromagnetic/insulator/ferromagnetic tunneling has been shown to give over 10% change in the junction resistance with H less than 100 Oe, at room temperature but decreases at high dc-bias across the junction. Using such junctions as magnetic sensors or memory elements would have several advantages; it is a trilayer device and does not strongly depend on the thickness of FM electrodes or the tunnel barrier; submicron size is possible with high junction resistance and low power dissipation. The magnitude of the effect is consistent with the simple model of spin-polarized tunneling between ferromagnets.

Abstract translation: 已经显示铁磁/绝缘体/铁磁隧道在室温下使H的连接电阻变化超过10％，而在连接处的高直流偏压下降低。 使用这样的接头作为磁性传感器或记忆元件将具有若干优点; 它是三层装置，并且不强烈地依赖于FM电极或隧道屏障的厚度; 亚微米尺寸可能具有高结电阻和低功耗。 效应的幅度与铁磁体之间的自旋极化隧穿的简单模型一致。

公开(公告)号：US20130100724A1

公开(公告)日：2013-04-25

申请号：US13423520

申请日：2012-03-19

Applicant: Karthik Venkataraman ,  Jagadeesh S. Moodera

Inventor： Karthik Venkataraman ,  Jagadeesh S. Moodera

IPC: G11C11/22 ,  H01L21/8246 ,  B82Y99/00

CPC classification number: G11B5/02 ,  G11B5/64 ,  G11B5/65 ,  G11B5/746 ,  G11B9/04 ,  G11B9/149 ,  G11B2005/0002 ,  G11C11/161 ,  G11C11/1675 ,  G11C13/0014 ,  H01F10/005 ,  H01F10/3254 ,  H01F41/325

Abstract: A memory element is provided that includes a ferromagnetic (FM) layer having one or more ferromagnetic materials. One or more first molecule layers are positioned on the FM layer where charge transfer and interface chemistry between the one or more first molecule layers and FM layer induces a magnetic moment in the one or more first molecule layers. The magnetic moment is stored in the one or more first molecule layers acting as bit information that is retained or written into the one or more first molecule layers. One or more spin-filter layers are positioned on the one or more first molecule layers. The one or more spin-filter layers are positioned on the one or more spin-filter layers to form a physical or a chemical π-dimer layer structure.

Abstract translation: 提供了一种存储元件，其包括具有一个或多个铁磁材料的铁磁（FM）层。 一个或多个第一分子层位于FM层上，其中一个或多个第一分子层和FM层之间的电荷转移和界面化学在一个或多个第一分子层中诱导磁矩。 磁矩存储在作为保留或写入一个或多个第一分子层的位信息的一个或多个第一分子层中。 一个或多个自旋过滤层位于一个或多个第一分子层上。 一个或多个自旋过滤器层定位在一个或多个自旋过滤器层上以形成物理或化学的二聚体 - 二聚体层结构。

公开(公告)号：US20080152952A1

公开(公告)日：2008-06-26

申请号：US11949988

申请日：2007-12-04

Applicant: Tiffany S. Santos ,  Joo Sang Lee ,  Hyunja Shim ,  Jagadeesh S. Moodera

Inventor： Tiffany S. Santos ,  Joo Sang Lee ,  Hyunja Shim ,  Jagadeesh S. Moodera

IPC: G11B5/39 ,  H01L21/02

CPC classification number: H01L43/08 ,  B82Y25/00 ,  G01R33/093 ,  G01R33/1284 ,  G11B5/3909 ,  H01L43/12 ,  Y10T428/1114

Abstract: The organic spin transport device, such as a magnetic tunnel junction or a transistor, includes at least two ferromagnetic material electrodes. At least one organic semiconductor structure is formed between the at least two ferromagnetic material electrodes. At least one buffer layer is positioned between the at least one organic semiconductor structure and the at least two ferromagnetic material electrodes. The at least one buffer layer reduces spin scattering between the at least two ferromagnetic material electrodes and the at least one organic semiconductor structure. The device exhibits a magnetoresistive effect that depends on the relative magnetization of the two ferromagnetic material electrodes.

Abstract translation: 诸如磁性隧道结或晶体管的有机自旋传输器件包括至少两个铁磁材料电极。 在至少两个铁磁材料电极之间形成至少一个有机半导体结构。 至少一个缓冲层位于至少一个有机半导体结构和至少两个铁磁材料电极之间。 所述至少一个缓冲层减少所述至少两个铁磁材料电极与所述至少一个有机半导体结构之间的旋转散射。 该器件具有取决于两个铁磁材料电极的相对磁化强度的磁阻效应。

公开(公告)号：US5835314A

公开(公告)日：1998-11-10

申请号：US747152

申请日：1996-11-08

Applicant: Jagadeesh S. Moodera ,  Janusz Nowak ,  Lisa Kinder ,  Patrick LeClair

Inventor： Jagadeesh S. Moodera ,  Janusz Nowak ,  Lisa Kinder ,  Patrick LeClair

IPC: G01N13/10 ,  G01N13/22 ,  G11B5/00 ,  G11B5/012 ,  G11B11/10 ,  G11C11/15 ,  H01F10/32 ,  H01L43/08 ,  G11B5/39 ,  G11C11/00

CPC classification number: B82Y25/00 ,  G01R33/093 ,  G01R33/098 ,  G11B5/012 ,  G11C11/15 ,  H01F10/3254 ,  H01L43/08 ,  G11B11/10 ,  G11B2005/0002 ,  G11B2005/0005 ,  G11B5/00

Abstract: Ferromagnetic-insulator-ferromagnetic trilayer junctions show magnetoresistance (JMR) effects ranging from about 16% to several hundred percent at room temperature. Larger effects are observed when the actual tunneling resistance (R.sub.T) is comparable to electrode film resistance (R.sub.L) over the junction area in cross-geometry junction measurements. The geometrically enhanced large JMR can be qualitatively explained by the nonuniform current flow over the function area when R.sub.T is comparable to R.sub.L, in the cross-geometry junction structure. For a fixed junction area, the effective junction resistance (R.sub.J) can be varied from less than 1 ohm to several kilohms by controlling the thickness of the insulating layer or by appropriately selecting ferromagnetic films. The trilayer tunnel junctions of the present invention are nonvolatile, stable and are reproducible.

Abstract translation: 铁磁 - 绝缘体 - 铁磁三层结在室温下显示出约16％至几百％的磁阻（JMR）效应。 当实际隧道电阻（RT）与交叉几何结点测量中的接合面积上的电极膜电阻（RL）相当时，观察到较大的效应。 在几何连接结构中，当RT与RL相当时，可以通过功能区域上的不均匀电流来定性地解释几何增强的大JMR。 对于固定的结区，通过控制绝缘层的厚度或通过适当选择铁磁性膜，有效结电阻（RJ）可以从小于1欧姆到几千欧姆的变化。 本发明的三层隧道结是非易失性的，稳定的并且是可再现的。