公开(公告)号：US07741634B2

公开(公告)日：2010-06-22

申请号：US12055593

申请日：2008-03-26

Applicant: Heejae Shim ,  Jagadeesh S. Moodera

Inventor： Heejae Shim ,  Jagadeesh S. Moodera

IPC: H01L23/48 ,  H01L29/08 ,  H01L21/00

CPC classification number: H01L39/226 ,  H01L39/2493

Abstract: A Josephson junction (JJ) device includes a buffered substrate comprising a first buffer layer formed on a substrate. A second buffer layer is formed on the first buffer layer. The second buffer layer includes a hexagonal compound structure. A trilayer structure is formed on the buffered substrate comprising at least two layers of a superconducting material. A thin tunnel barrier layer is positioned between the at least two layers. The buffered substrate is used to minimize lattice mismatch and interdiffusion in the trilayer structure so as to allow the JJ device to operate above 20 K.

Abstract translation: 约瑟夫逊结（JJ）器件包括缓冲衬底，其包括形成在衬底上的第一缓冲层。 在第一缓冲层上形成第二缓冲层。 第二缓冲层包括六边形复合结构。 在缓冲衬底上形成三层结构，其包括至少两层超导材料。 薄的隧道势垒层位于至少两层之间。 缓冲衬底用于最小化三层结构中的晶格失配和相互扩散，从而允许JJ器件在20K以上的工作。

公开(公告)号：US20090247410A1

公开(公告)日：2009-10-01

申请号：US12055593

申请日：2008-03-26

Applicant: Heejae Shim ,  Jagadeesh S. Moodera

Inventor： Heejae Shim ,  Jagadeesh S. Moodera

IPC: H01L39/22 ,  H01L39/24

CPC classification number: H01L39/226 ,  H01L39/2493

Abstract: A Josephson junction (JJ) device includes a buffered substrate comprising a first buffer layer formed on a substrate. A second buffer layer is formed on the first buffer layer. The second buffer layer includes a hexagonal compound structure. A trilayer structure is formed on the buffered substrate comprising at least two layers of a superconducting material. A thin tunnel barrier layer is positioned between the at least two layers. The buffered substrate is used to minimize lattice mismatch and interdiffusion in the trilayer structure so as to allow the JJ device to operate above 20 K. 12

Abstract translation: 约瑟夫逊结（JJ）器件包括缓冲衬底，其包括形成在衬底上的第一缓冲层。 在第一缓冲层上形成第二缓冲层。 第二缓冲层包括六边形复合结构。 在缓冲衬底上形成三层结构，其包括至少两层超导材料。 薄的隧道势垒层位于至少两层之间。 缓冲衬底用于最小化三层结构中的晶格失配和相互扩散，从而允许JJ器件在20K以上的工作。

公开(公告)号：US08729576B2

公开(公告)日：2014-05-20

申请号：US13363096

申请日：2012-01-31

Applicant: Heejae Shim

Inventor： Heejae Shim

IPC: H01L33/00

CPC classification number: H01L33/16 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/02439 ,  H01L21/02488 ,  H01L21/02521 ,  H01L21/0254 ,  H01L33/12 ,  H01L33/32 ,  H01L2224/48091 ,  H01L2924/00014

Abstract: A light emitting device is provided that includes a substrate, a buffer layer disposed on an r-plane of the substrate, the buffer layer having a rock salt structured nitride, and a light emitting structure arranged on the buffer layer, the light emitting structure being grown in an a-plane.

Abstract translation: 提供了一种发光器件，其包括衬底，设置在衬底的r平面上的缓冲层，具有岩盐结构的氮化物的缓冲层和布置在缓冲层上的发光结构，发光结构为 长在一架飞机上。