公开(公告)号：US20090141409A1

公开(公告)日：2009-06-04

申请号：US11949208

申请日：2007-12-03

Applicant: Tiffany S. Santos ,  Jagadeesh S. Moodera

Inventor： Tiffany S. Santos ,  Jagadeesh S. Moodera

IPC: G11B5/127

CPC classification number: H01L29/66984 ,  H01L29/0843 ,  H01L29/0895 ,  H01L29/51 ,  H01L29/778

Abstract: A spin filter transistor having a semiconductor structure. A spin injector including a first spin filter tunnel barrier is positioned on the semiconductor structure. A spin detector including a second spin filter tunnel barrier is positioned on the semiconductor. Highly polarized spins injected from the spin injector are transported through the semiconductor structure, and are detected at the spin detector. The magnitude of the spin current depends on the relative magnetic alignment of the first spin filter tunnel barrier and the second spin filter tunnel barrier.

Abstract translation: 具有半导体结构的自旋滤波器晶体管。 包括第一自旋过滤器隧道势垒的自旋注入器位于半导体结构上。 包括第二自旋滤波器隧道势垒的自旋检测器位于半导体上。 从旋转喷射器喷射的高度极化的自旋被传送通过半导体结构，并且在旋转检测器处被检测。 自旋电流的大小取决于第一自旋滤波器隧道势垒和第二自旋滤波器隧道势垒的相对磁性取向。

公开(公告)号：US20080152952A1

公开(公告)日：2008-06-26

申请号：US11949988

申请日：2007-12-04

Applicant: Tiffany S. Santos ,  Joo Sang Lee ,  Hyunja Shim ,  Jagadeesh S. Moodera

Inventor： Tiffany S. Santos ,  Joo Sang Lee ,  Hyunja Shim ,  Jagadeesh S. Moodera

IPC: G11B5/39 ,  H01L21/02

CPC classification number: H01L43/08 ,  B82Y25/00 ,  G01R33/093 ,  G01R33/1284 ,  G11B5/3909 ,  H01L43/12 ,  Y10T428/1114

Abstract: The organic spin transport device, such as a magnetic tunnel junction or a transistor, includes at least two ferromagnetic material electrodes. At least one organic semiconductor structure is formed between the at least two ferromagnetic material electrodes. At least one buffer layer is positioned between the at least one organic semiconductor structure and the at least two ferromagnetic material electrodes. The at least one buffer layer reduces spin scattering between the at least two ferromagnetic material electrodes and the at least one organic semiconductor structure. The device exhibits a magnetoresistive effect that depends on the relative magnetization of the two ferromagnetic material electrodes.

Abstract translation: 诸如磁性隧道结或晶体管的有机自旋传输器件包括至少两个铁磁材料电极。 在至少两个铁磁材料电极之间形成至少一个有机半导体结构。 至少一个缓冲层位于至少一个有机半导体结构和至少两个铁磁材料电极之间。 所述至少一个缓冲层减少所述至少两个铁磁材料电极与所述至少一个有机半导体结构之间的旋转散射。 该器件具有取决于两个铁磁材料电极的相对磁化强度的磁阻效应。