公开(公告)号：US5835314A

公开(公告)日：1998-11-10

申请号：US747152

申请日：1996-11-08

Applicant: Jagadeesh S. Moodera ,  Janusz Nowak ,  Lisa Kinder ,  Patrick LeClair

Inventor： Jagadeesh S. Moodera ,  Janusz Nowak ,  Lisa Kinder ,  Patrick LeClair

IPC: G01N13/10 ,  G01N13/22 ,  G11B5/00 ,  G11B5/012 ,  G11B11/10 ,  G11C11/15 ,  H01F10/32 ,  H01L43/08 ,  G11B5/39 ,  G11C11/00

CPC classification number: B82Y25/00 ,  G01R33/093 ,  G01R33/098 ,  G11B5/012 ,  G11C11/15 ,  H01F10/3254 ,  H01L43/08 ,  G11B11/10 ,  G11B2005/0002 ,  G11B2005/0005 ,  G11B5/00

Abstract: Ferromagnetic-insulator-ferromagnetic trilayer junctions show magnetoresistance (JMR) effects ranging from about 16% to several hundred percent at room temperature. Larger effects are observed when the actual tunneling resistance (R.sub.T) is comparable to electrode film resistance (R.sub.L) over the junction area in cross-geometry junction measurements. The geometrically enhanced large JMR can be qualitatively explained by the nonuniform current flow over the function area when R.sub.T is comparable to R.sub.L, in the cross-geometry junction structure. For a fixed junction area, the effective junction resistance (R.sub.J) can be varied from less than 1 ohm to several kilohms by controlling the thickness of the insulating layer or by appropriately selecting ferromagnetic films. The trilayer tunnel junctions of the present invention are nonvolatile, stable and are reproducible.

Abstract translation: 铁磁 - 绝缘体 - 铁磁三层结在室温下显示出约16％至几百％的磁阻（JMR）效应。 当实际隧道电阻（RT）与交叉几何结点测量中的接合面积上的电极膜电阻（RL）相当时，观察到较大的效应。 在几何连接结构中，当RT与RL相当时，可以通过功能区域上的不均匀电流来定性地解释几何增强的大JMR。 对于固定的结区，通过控制绝缘层的厚度或通过适当选择铁磁性膜，有效结电阻（RJ）可以从小于1欧姆到几千欧姆的变化。 本发明的三层隧道结是非易失性的，稳定的并且是可再现的。