公开(公告)号：US09041172B1

公开(公告)日：2015-05-26

申请号：US14105473

申请日：2013-12-13

申请人： Zhi Qiang Niu ,  Hamza Yilmaz ,  Jun Lu ,  Fei Wang

发明人： Zhi Qiang Niu ,  Hamza Yilmaz ,  Jun Lu ,  Fei Wang

IPC分类号： H01L23/495

CPC分类号： H01L23/49503 ,  H01L21/561 ,  H01L23/3107 ,  H01L23/3121 ,  H01L23/49534 ,  H01L23/49562 ,  H01L23/49575 ,  H01L24/06 ,  H01L24/29 ,  H01L24/32 ,  H01L24/37 ,  H01L24/40 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L24/97 ,  H01L2224/04034 ,  H01L2224/04042 ,  H01L2224/0603 ,  H01L2224/06051 ,  H01L2224/06181 ,  H01L2224/291 ,  H01L2224/2929 ,  H01L2224/29339 ,  H01L2224/32245 ,  H01L2224/371 ,  H01L2224/40247 ,  H01L2224/48247 ,  H01L2224/49111 ,  H01L2224/49175 ,  H01L2224/73263 ,  H01L2224/73265 ,  H01L2224/84801 ,  H01L2224/8485 ,  H01L2224/97 ,  H01L2924/00014 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/181 ,  H01L2924/1815 ,  H01L2224/85 ,  H01L2224/83 ,  H01L2924/00012 ,  H01L2224/84 ,  H01L2924/014 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： The present invention relates generally to a semiconductor device and, more specifically, to optimizing the creep-age distance of the power semiconductor device and a preparation method thereof. The power semiconductor device includes a chip mounting unit with a die paddle and a plurality of leads arranged side by side located close to one side edge of the die paddle in a non-equidistant manner, a semiconductor chip attached on the die paddle, and a plastic packaging body covering the die paddle, the semiconductor chip, where the plastic packing body includes a plastic extension portion covering at least a part of a lead shoulder of a lead to obtain better electrical safety distance between the terminals of the semiconductor device, thus voltage creep-age distance of the device is increased.

摘要翻译： 本发明一般涉及一种半导体器件，更具体地，涉及优化功率半导体器件的蠕变寿命距离及其制备方法。 功率半导体器件包括具有管芯焊盘的芯片安装单元和以等间距方式靠近管芯焊盘的一个侧边缘并排设置的多个引线，附接在管芯焊盘上的半导体芯片，以及 塑料包装体覆盖模片，半导体芯片，其中塑料包装体包括覆盖引线的引线肩部的至少一部分的塑料延伸部分，以在半导体器件的端子之间获得更好的电气安全距离，因此电压 设备的爬坡距离增加。

公开(公告)号：US09006870B2

公开(公告)日：2015-04-14

申请号：US13955206

申请日：2013-07-31

申请人： Xiaotian Zhang ,  Hua Pan ,  Ming-Chen Lu ,  Jun Lu ,  Hamza Yilmaz

发明人： Xiaotian Zhang ,  Hua Pan ,  Ming-Chen Lu ,  Jun Lu ,  Hamza Yilmaz

IPC分类号： H01L23/34 ,  H01L23/495 ,  H01L23/00

CPC分类号： H01L25/50 ,  H01L21/304 ,  H01L21/56 ,  H01L21/78 ,  H01L22/14 ,  H01L23/3675 ,  H01L23/4334 ,  H01L23/492 ,  H01L23/49503 ,  H01L23/49524 ,  H01L23/49534 ,  H01L23/49562 ,  H01L23/49575 ,  H01L24/05 ,  H01L24/06 ,  H01L24/11 ,  H01L24/27 ,  H01L24/33 ,  H01L24/37 ,  H01L24/40 ,  H01L24/41 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L24/81 ,  H01L24/83 ,  H01L24/85 ,  H01L24/97 ,  H01L25/0652 ,  H01L25/07 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05553 ,  H01L2224/05554 ,  H01L2224/0603 ,  H01L2224/118 ,  H01L2224/13022 ,  H01L2224/32245 ,  H01L2224/37013 ,  H01L2224/37147 ,  H01L2224/40095 ,  H01L2224/40137 ,  H01L2224/40145 ,  H01L2224/40245 ,  H01L2224/40247 ,  H01L2224/48091 ,  H01L2224/48106 ,  H01L2224/48145 ,  H01L2224/48177 ,  H01L2224/48247 ,  H01L2224/48465 ,  H01L2224/49111 ,  H01L2224/49113 ,  H01L2224/49171 ,  H01L2224/73263 ,  H01L2224/73265 ,  H01L2224/83801 ,  H01L2224/8385 ,  H01L2224/83851 ,  H01L2224/84801 ,  H01L2224/85 ,  H01L2224/97 ,  H01L2225/06506 ,  H01L2225/0651 ,  H01L2225/06572 ,  H01L2225/06589 ,  H01L2924/00014 ,  H01L2924/07802 ,  H01L2924/0781 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/181 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2224/45099

摘要： A stacked multi-chip packaging structure comprises a lead frame, a first semiconductor chip mounted on the lead frame, a second semiconductor chip flipped-chip mounted on the lead frame, a metal clip mounted on top of the first and second semiconductor chips and a third semiconductor chip stacked on the meal clip; bonding wires electrically connecting electrodes on the third semiconductor chip to the first and second semiconductor chips and the pins of the lead frame; plastic molding encapsulating the lead frame, the chips and the metal clip.

摘要翻译： 堆叠多芯片封装结构包括引线框架，安装在引线框架上的第一半导体芯片，安装在引线框架上的第二半导体芯片翻转芯片，安装在第一和第二半导体芯片顶部的金属夹子和 第三个半导体芯片堆叠在餐夹上; 将第三半导体芯片上的电极电连接到第一和第二半导体芯片和引线框架的引脚的接合线; 塑料成型封装引线框架，芯片和金属夹。

公开(公告)号：US08933549B2

公开(公告)日：2015-01-13

申请号：US14106654

申请日：2013-12-13

申请人： Alpha and Omega Semiconductor Incorporated

发明人： Kai Liu ,  Lei Shi ,  Jun Lu ,  Anup Bhalla

IPC分类号： H01L23/52 ,  H01L23/495 ,  H01L23/00 ,  H01L23/31

CPC分类号： H01L23/49575 ,  H01L23/3107 ,  H01L23/49524 ,  H01L23/49537 ,  H01L23/49562 ,  H01L23/49589 ,  H01L24/29 ,  H01L24/32 ,  H01L24/34 ,  H01L24/37 ,  H01L24/40 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L24/92 ,  H01L2224/24247 ,  H01L2224/291 ,  H01L2224/2919 ,  H01L2224/32245 ,  H01L2224/37011 ,  H01L2224/40095 ,  H01L2224/40245 ,  H01L2224/40247 ,  H01L2224/48247 ,  H01L2224/48465 ,  H01L2224/49111 ,  H01L2224/73219 ,  H01L2224/73221 ,  H01L2224/73265 ,  H01L2224/83801 ,  H01L2224/8385 ,  H01L2224/92246 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01013 ,  H01L2924/01033 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/19041 ,  H01L2924/19105 ,  H01L2924/30107 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207 ,  H01L2224/37099

摘要： A dual-leadframe multi-chip package comprises a first leadframe with a first die pad, and a second leadframe with a second die pad; a first chip mounted on the first die pad functioning as a high-side MOSFET and second chip mounted on the second die pad functioning as a low-side MOSFET. The package may further comprises a bypass capacity configured as a third chip mounted on the first die pad or integrated with the first chip. The package may further comprise a three-dimensional connecting plate formed as an integrated structure as the second die pad for electrically connecting a top contact area of the first chip to a bottom contact area of the second chip. A top connecting plate connects a top contact area of the second chip and a top contact area of the third chip to an outer pin of the first leadframe.

摘要翻译： 双引线框多芯片封装包括具有第一管芯焊盘的第一引线框架和具有第二管芯焊盘的第二引线框架; 安装在用作高边MOSFET的第一芯片焊盘上的第一芯片和安装在用作低端MOSFET的第二芯片焊盘上的第二芯片。 封装还可以包括配置为安装在第一裸片焊盘上或与第一芯片集成的第三芯片的旁路容量。 封装还可以包括形成为一体结构的三维连接板作为第二芯片焊盘，用于将第一芯片的顶部接触区域电连接到第二芯片的底部接触区域。 顶部连接板将第二芯片的顶部接触区域和第三芯片的顶部接触区域连接到第一引线框架的外部引脚。

公开(公告)号：US08796858B2

公开(公告)日：2014-08-05

申请号：US13488424

申请日：2012-06-04

申请人： Tao Feng ,  Yueh-Se Ho

发明人： Tao Feng ,  Yueh-Se Ho

IPC分类号： H01L23/48

CPC分类号： H01L21/561 ,  H01L23/142 ,  H01L23/3114 ,  H01L23/49827 ,  H01L24/29 ,  H01L24/92 ,  H01L2224/29101 ,  H01L2224/2919 ,  H01L2224/8385 ,  H01L2224/9202 ,  H01L2224/94 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01057 ,  H01L2924/01078 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/12042 ,  H01L2924/12044 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/00

摘要： A virtually substrate-less composite power semiconductor device (VSLCPSD) and method are disclosed. The VSLCPSD has a power semiconductor device (PSD), a front-face device carrier (FDC) made out of a carrier material and an intervening bonding layer (IBL). Both carrier and IBL material can be conductive or non-conductive. The PSD has back substrate portion, front semiconductor device portion with patterned front-face device metallization pads and a virtually diminishing thickness TPSD. The FDC has patterned back-face carrier metallizations contacting the front-face device metallization pads, patterned front-face carrier metallization pads and numerous parallelly connected through-carrier conductive vias respectively connecting the back-face carrier metallizations to the front-face carrier metallization pads. The FDC thickness TFDC is large enough to provide structural rigidity to the VSLCPSD. The diminishing thickness TPSD effects a low back substrate resistance and the through-carrier conductive vias effect a low front-face contact resistance to the front-face device metallization pads.

摘要翻译： 公开了一种实际上无衬底的复合功率半导体器件（VSLCPSD）和方法。 VSLCPSD具有功率半导体器件（PSD），由载体材料制成的正面器件载体（FDC）和中间键合层（IBL）。 载体和IBL材料都可以是导电的或不导电的。 PSD具有后衬底部分，具有图案化前面装置金属化焊盘的前半导体器件部分和实际上减小的厚度TPSD。 FDC具有接触前表面器件金属化焊盘，图案化前面载体金属化焊盘和多个并联连接的贯穿载体导电通孔的图案化背面载体金属化，其分别将背面载体金属化物连接到前面载体金属化焊盘 。 FDC厚度TFDC足够大以向VSLCPSD提供结构刚度。 厚度减小的TPSD会影响背面的底层电阻，并且贯穿载体的导电通孔会对前面装置的金属化焊盘产生低的前端接触电阻。

公开(公告)号：US08709893B2

公开(公告)日：2014-04-29

申请号：US13216122

申请日：2011-08-23

申请人： Yi Su ,  Daniel Ng ,  Anup Bhalla ,  Jun Lu

发明人： Yi Su ,  Daniel Ng ,  Anup Bhalla ,  Jun Lu

IPC分类号： H01L29/78

CPC分类号： H01L29/7811 ,  H01L21/30604 ,  H01L21/30608 ,  H01L23/495 ,  H01L23/49503 ,  H01L23/49513 ,  H01L23/49562 ,  H01L24/29 ,  H01L24/83 ,  H01L29/0619 ,  H01L29/0638 ,  H01L29/0657 ,  H01L29/0886 ,  H01L29/41741 ,  H01L29/41766 ,  H01L29/456 ,  H01L29/66666 ,  H01L29/66727 ,  H01L29/66734 ,  H01L29/7802 ,  H01L29/7813 ,  H01L29/7827 ,  H01L2224/291 ,  H01L2224/2929 ,  H01L2224/293 ,  H01L2224/32245 ,  H01L2224/8309 ,  H01L2224/83141 ,  H01L2224/83365 ,  H01L2224/83385 ,  H01L2224/83801 ,  H01L2224/83851 ,  H01L2924/12036 ,  H01L2924/12042 ,  H01L2924/13091 ,  H01L2924/00014 ,  H01L2924/014 ,  H01L2924/00

摘要： The invention relates to a power semiconductor device and its preparation methods thereof. Particularly, the invention aims at providing a method for reducing substrate contribution to the Rdson (drain-source on resistance) of power MOSFETs, and a power MOSFET device made by the method. By forming one or more bottom grooves at the bottom of Si substrate, the on resistance of the power MOSFET device attributed to the substrate is effectively reduced. A matching lead frame base complementary to the substrate with bottom grooves further improves the package of the power MOSFET device.

摘要翻译： 本发明涉及功率半导体器件及其制备方法。 特别地，本发明旨在提供一种降低功率MOSFET的Rdson（漏源电阻）的基板贡献的方法以及通过该方法制造的功率MOSFET器件。 通过在Si衬底的底部形成一个或多个底部沟槽，有效地降低归因于衬底的功率MOSFET器件的导通电阻。 与具有底槽的衬底互补的匹配引线框架底座进一步改善了功率MOSFET器件的封装。

公开(公告)号：US08669650B2

公开(公告)日：2014-03-11

申请号：US13244256

申请日：2011-09-23

申请人： Xiaotian Zhang ,  Hamza Yilmaz ,  Jun Lu ,  Xiaoguang Zeng ,  Ming-Chen Lu

发明人： Xiaotian Zhang ,  Hamza Yilmaz ,  Jun Lu ,  Xiaoguang Zeng ,  Ming-Chen Lu

IPC分类号： H01L23/495 ,  H01L23/02

CPC分类号： H01L23/49524 ,  H01L23/3107 ,  H01L23/49503 ,  H01L23/49537 ,  H01L23/49562 ,  H01L23/49575 ,  H01L24/37 ,  H01L24/40 ,  H01L24/41 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L24/81 ,  H01L24/84 ,  H01L25/074 ,  H01L25/18 ,  H01L2224/0401 ,  H01L2224/04026 ,  H01L2224/04034 ,  H01L2224/04042 ,  H01L2224/05553 ,  H01L2224/05599 ,  H01L2224/16245 ,  H01L2224/291 ,  H01L2224/32245 ,  H01L2224/33181 ,  H01L2224/3701 ,  H01L2224/371 ,  H01L2224/40095 ,  H01L2224/40106 ,  H01L2224/40135 ,  H01L2224/40245 ,  H01L2224/40247 ,  H01L2224/4118 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/48145 ,  H01L2224/48177 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/49111 ,  H01L2224/49171 ,  H01L2224/73221 ,  H01L2224/73253 ,  H01L2224/73265 ,  H01L2224/73271 ,  H01L2224/81192 ,  H01L2224/81801 ,  H01L2224/83801 ,  H01L2224/84801 ,  H01L2224/8485 ,  H01L2224/85399 ,  H01L2224/92 ,  H01L2924/00013 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01027 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/12042 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/30107 ,  H01L2224/81 ,  H01L2224/84 ,  H01L2224/45099 ,  H01L2924/00 ,  H01L2224/13099 ,  H01L2224/13599 ,  H01L2224/05099 ,  H01L2224/29099 ,  H01L2224/29599 ,  H01L2924/00012

摘要： A semiconductor device package comprises a lead frame having a die paddle comprising a first chip installation area and a second chip installation area, a recess area formed in the first chip installation area, and multiple metal pillars formed in the recess area, a notch divides the first chip installation area into a transverse base extending transversely and a longitudinal base extending longitudinally, and separates the recess area into a transverse recess part formed in the transverse base and a longitudinal recess part formed in longitudinal base; a portion of a transverse extending part connecting to an external pin extends into a portion inside of the notch.

摘要翻译： 一种半导体器件封装，包括具有包括第一芯片安装区域和第二芯片安装区域的模板的引线框架，形成在第一芯片安装区域中的凹部区域和形成在凹部区域中的多个金属柱，凹口将 第一芯片安装区域横向延伸的横向基部和纵向延伸的纵向基部，并且将凹部区域分离成形成在横向基部中的横向凹部和形成在纵向基部中的纵向凹部; 连接到外部销的横向延伸部分的一部分延伸到凹口内部的一部分。

公开(公告)号：US08642429B2

公开(公告)日：2014-02-04

申请号：US13537493

申请日：2012-06-29

申请人： Xiaobin Wang ,  Anup Bhalla ,  Yeeherg Lee

发明人： Xiaobin Wang ,  Anup Bhalla ,  Yeeherg Lee

IPC分类号： H01L21/336 ,  H01L27/088

CPC分类号： H01L29/0657 ,  H01L21/76202 ,  H01L21/76224 ,  H01L21/76227 ,  H01L29/407 ,  H01L29/872 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor device structure with an oxide-filled large deep trench (OFLDT) portion having trench size TCS and trench depth TCD is disclosed. A bulk semiconductor layer (BSL) is provided with a thickness BSLT>TCD. A large trench top area (LTTA) is mapped out atop BSL with its geometry equal to OFLDT. The LTTA is partitioned into interspersed, complementary interim areas ITA-A and ITA-B. Numerous interim vertical trenches of depth TCD are created into the top BSL surface by removing bulk semiconductor materials corresponding to ITA-B. The remaining bulk semiconductor materials corresponding to ITA-A are converted into oxide. If any residual space is still left between the so-converted ITA-A, the residual space is filled up with oxide deposition. Importantly, the geometry of all ITA-A and ITA-B should be configured simple and small enough to facilitate fast and efficient processes of oxide conversion and oxide filling.

摘要翻译： 公开了具有沟槽尺寸TCS和沟槽深度TCD的具有氧化物填充的大深沟槽（OFLDT）部分的半导体器件结构。 体积半导体层（BSL）设置有厚度BSLT> TCD。 一个大的沟槽顶部区域（LTTA）映射到BSL顶部，其几何形状等于OFLDT。 LTTA被划分为散置的，互补的临时区域ITA-A和ITA-B。 通过去除对应于ITA-B的散装半导体材料，在顶部BSL表面上形成了许多深度TCD的临时垂直沟槽。 对应于ITA-A的剩余体积半导体材料被转化为氧化物。 如果在经过转换的ITA-A之间仍然留有剩余空间，则剩余空间被氧化物沉积填满。 重要的是，所有ITA-A和ITA-B的几何形状都应该被简单而小型化，以便于快速有效地进行氧化物转换和氧化物填充。

公开(公告)号：US08399925B2

公开(公告)日：2013-03-19

申请号：US12704528

申请日：2010-02-12

申请人： Xiaobin Wang ,  Anup Bhalla ,  Hamza Yilmaz ,  Daniel Ng

发明人： Xiaobin Wang ,  Anup Bhalla ,  Hamza Yilmaz ,  Daniel Ng

IPC分类号： H01L29/66

CPC分类号： H01L29/407 ,  H01L21/76205 ,  H01L29/04 ,  H01L29/0619 ,  H01L29/0638 ,  H01L29/0649 ,  H01L29/0696 ,  H01L29/402 ,  H01L29/41766 ,  H01L29/42368 ,  H01L29/66727 ,  H01L29/66734 ,  H01L29/7803 ,  H01L29/7811 ,  H01L29/7813 ,  H01L2924/0002 ,  H01L2924/00

摘要： A termination structure with multiple embedded potential spreading capacitive structures (TSMEC) and method are disclosed for terminating an adjacent trench MOSFET atop a bulk semiconductor layer (BSL) with bottom drain electrode. The BSL has a proximal bulk semiconductor wall (PBSW) supporting drain-source voltage (DSV) and separating TSMEC from trench MOSFET. The TSMEC has oxide-filled large deep trench (OFLDT) bounded by PBSW and a distal bulk semiconductor wall (DBSW). The OFLDT includes a large deep oxide trench into the BSL and embedded capacitive structures (EBCS) located inside the large deep oxide trench and between PBSW and DBSW for spatially spreading the DSV across them. In one embodiment, the EBCS contains interleaved conductive embedded polycrystalline semiconductor regions (EPSR) and oxide columns (OXC) of the OFLDT, a proximal EPSR next to PBSW is connected to an active upper source region and a distal EPSR next to DBSW is connected to the DBSW.

摘要翻译： 公开了具有多个嵌入式电位扩展电容结构（TSMEC）和方法的端接结构，用于在具有底部漏电极的体半导体层（BSL）的顶部端接邻近的沟槽MOSFET。 BSL具有支持漏极 - 源极电压（DSV）的近端体半导体壁（PBSW），并将TSMEC与沟槽MOSFET分离。 TSMEC具有由PBSW和远端体半导体壁（DBSW）界定的氧化物填充的大深沟槽（OFLDT）。 OFLDT包括位于大深度氧化物沟槽内部以及PBSW和DBSW之间的BSL中的大型深层氧化物沟槽和嵌入式电容结构（EBCS），用于在其间空间扩展DSV。 在一个实施例中，EBCS包含OFLDT的交错导电嵌入式多晶半导体区域（EPSR）和氧化物柱（OXC），与PBSW相邻的近端EPSR连接到活动上部源区域，并且与DBSW相邻的远端EPSR被连接到 星展集团

公开(公告)号：US08148817B2

公开(公告)日：2012-04-03

申请号：US12889673

申请日：2010-09-24

申请人： François Hébert ,  Allen Chang

发明人： François Hébert ,  Allen Chang

IPC分类号： H01L23/34

CPC分类号： H01L23/49562 ,  H01L23/49575 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L25/16 ,  H01L2224/16245 ,  H01L2224/32145 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/48472 ,  H01L2224/49111 ,  H01L2224/49171 ,  H01L2224/73257 ,  H01L2224/73265 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01015 ,  H01L2924/01027 ,  H01L2924/01033 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/12032 ,  H01L2924/12041 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/30105 ,  H01L2924/30107 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2224/32225 ,  H01L2224/45099 ,  H01L2224/05599 ,  H01L2224/0401

摘要： A DC-DC buck converter in multi-die package is proposed having an output inductor, a low-side Schottky diode and a high-side vertical MOSFET controlled by a power regulating controller (PRC). The multi-die package includes a first die pad with the Schottky diode placed there on side by side with the vertical MOSFET. The PRC die is attached atop the first die pad via an insulating die bond. Alternatively, the first die pad is grounded. The vertical MOSFET is a top drain N-channel FET, the substrate of Schottky diode die is its anode. The Schottky diode and the vertical MOSFET are stacked atop the first die pad. The PRC is attached atop the first die pad via a conductive die bond. The Schottky diode die can be supplied in a flip-chip configuration with cathode being its substrate. Alternatively, the Schottky diode is supplied with anode being its substrate without the flip-chip configuration.

摘要翻译： 提出了具有由功率调节控制器（PRC）控制的输出电感器，低侧肖特基二极管和高侧垂直MOSFET的多管芯封装中的DC-DC降压转换器。 多管芯封装包括第一管芯焊盘，肖特基二极管与垂直MOSFET并排放置在其上。 PRC管芯通过绝缘管芯接合连接在第一管芯焊盘顶上。 或者，第一管芯焊盘接地。 垂直MOSFET是顶漏N沟道FET，肖特基二极管管芯的基极是其阳极。 肖特基二极管和垂直MOSFET堆叠在第一芯片焊盘的顶部。 PRC通过导电芯片键连接在第一裸片焊盘顶上。 肖特基二极管管芯可以以倒装芯片的形式提供，阴极是其衬底。 或者，肖特基二极管被提供有阳极作为其衬底而没有倒装芯片配置。

公开(公告)号：US07728655B2

公开(公告)日：2010-06-01

申请号：US12249162

申请日：2008-10-10

申请人： Kevin Ng ,  Zhinan Wei ,  Wai-Keung Peter Cheng ,  Allen Chang

发明人： Kevin Ng ,  Zhinan Wei ,  Wai-Keung Peter Cheng ,  Allen Chang

IPC分类号： G05F3/02

CPC分类号： H03K17/166 ,  H03K17/0822

摘要： A current limiting load switch for bridging supply Vss and load with a reference voltage VRdt dynamically generated by a VRdt-generator is proposed. It includes: A pair of power FET and sense FET interconnected in split-current configuration. The FET pair develops a load voltage while limiting load current Iload to a preset maximum Imax. The FET pair is sized to draw device currents Ipower and Is with RATIOI=Is/Ipower

摘要翻译： 提出了一种用于桥接电源Vss和负载由VRdt发生器动态生成的参考电压VRdt的限流负载开关。 它包括：分流电流互连的一对功率FET和感测FET。 FET对产生负载电压，同时将负载电流Iload限制在预设的最大值Imax。 FET对的大小可以用RATIOI = Is / Ipower << 1来绘制器件电流Ipower和Is。 感测FET高端端子通过检测电阻Rsense耦合到Vss，感测电压Vs = Is×Rsense。 一个电流限制放大器，其输入连接到VRdt和Vs，并且输出控制FET对封闭限流反馈回路。 VRdt发生器动态地调整VRdt并发和补偿，这是由于感测FET操作转换引起的改变RATIOI的不良影响，从而消除了Imload以外的Iload的过渡过冲。