公开(公告)号：US09263623B2

公开(公告)日：2016-02-16

申请号：US14570440

申请日：2014-12-15

Applicant: ZETTA RESEARCH AND DEVELOPMENT LLC—AQT SERIES

Inventor： Brian Josef Bartholomeusz ,  Michael Bartholomeusz

IPC: H01L21/00 ,  H01L31/18 ,  H01L31/032 ,  H01L31/0352 ,  H01L21/02

CPC classification number: H01L31/18 ,  H01L21/02521 ,  H01L21/02532 ,  H01L21/02568 ,  H01L21/02631 ,  H01L31/0322 ,  H01L31/0352 ,  Y02E10/541 ,  Y02P70/521

Abstract: Methods are described for depositing thin films, such as those used in forming a photovoltaic cell or device. In particular embodiments, one or more layers are deposited on a substrate by plasma spraying over the substrate. A grain size of grains in each of the one or more layers is at least approximately two times greater than a thickness of the respective layer. Accordingly, large flat-grained structures are formed in each respective layer, and grain boundaries within each respective layer can be minimized.

Abstract translation: 描述了沉积薄膜的方法，例如用于形成光伏电池或器件的薄膜。 在特定实施例中，通过等离子体喷涂在衬底上而将一个或多个层沉积在衬底上。 一层或多层中的每一层中的晶粒尺寸至少比相应层的厚度大约两倍。 因此，在每个各层中形成大的扁平结构，并且可以将各层内的晶界最小化。

公开(公告)号：US09123844B2

公开(公告)日：2015-09-01

申请号：US13867605

申请日：2013-04-22

Applicant: Zetta Research and Development LLC—AQT Series

Inventor： Mariana R. Munteanu ,  Erol Girt

IPC: H01L31/042 ,  H01L31/0352 ,  B82Y20/00 ,  B82Y30/00 ,  H01L31/032 ,  H01L31/0384 ,  H01L31/072 ,  H01L31/075 ,  H01L31/18 ,  H01L51/00 ,  H01L51/42

CPC classification number: H01L31/03529 ,  B82Y20/00 ,  B82Y30/00 ,  H01L31/032 ,  H01L31/0352 ,  H01L31/0384 ,  H01L31/072 ,  H01L31/075 ,  H01L31/18 ,  H01L51/0037 ,  H01L51/426 ,  Y02E10/548

Abstract: Photovoltaic structures for the conversion of solar irradiance into electrical free energy. In a particular implementation, a photovoltaic cell includes a granular semiconductor and oxide layer with nanometer-size absorber semiconductor grains surrounded by a matrix of oxide. The semiconductor and oxide layer is disposed between electron and hole conducting layers. In some implementations, multiple semiconductor and oxide layers can be deposited.

Abstract translation: 用于将太阳辐射转化为电自由能的光伏结构。 在具体实施方案中，光伏电池包括具有由氧化物基体包围的纳米尺寸的吸收剂半导体晶粒的粒状半导体和氧化物层。 半导体和氧化物层设置在电子和导电层之间。 在一些实施方案中，可以沉积多个半导体和氧化物层。

公开(公告)号：US09064700B2

公开(公告)日：2015-06-23

申请号：US13467904

申请日：2012-05-09

Applicant: Kaichiu Wong ,  Erik Sean Smith ,  Christ Willie Ford

Inventor： Kaichiu Wong ,  Erik Sean Smith ,  Christ Willie Ford

IPC: H01L21/00 ,  H01L21/02 ,  H01L31/032 ,  C23C16/30 ,  C23C16/56

CPC classification number: H01L21/02557 ,  C23C16/306 ,  C23C16/56 ,  H01L21/0256 ,  H01L21/02568 ,  H01L21/02667 ,  H01L31/0322 ,  H01L31/0326 ,  Y02E10/541

Abstract: In one embodiment, a method includes depositing a chalcogenide precursor layer onto a substrate, and annealing the precursor layer in the presence of a gaseous phase comprising volatile species, the partial pressure of each volatile species being approximately constant over substantially all of the surface of the precursor layer, the partial pressure of each species being between approximately 0.1 mTorr and 760 Torr, where the presence of the gaseous phase reduces decomposition of volatile species from the precursor layer during annealing.

Abstract translation: 在一个实施方案中，一种方法包括将硫族化物前体层沉积到基底上，并且在包含挥发性物质的气相存在下退火前体层，每个挥发性物质的分压在基本上全部的 前体层，每种物质的分压在约0.1mTorr和760托之间，其中气相的存在减少了退火期间挥发性物质从前体层的分解。

公开(公告)号：US08993370B2

公开(公告)日：2015-03-31

申请号：US13452603

申请日：2012-04-20

Applicant: Mariana Rodica Munteanu ,  Amith Kumar Murali ,  Kirk Hayes ,  Brian Josef Bartholomeusz

Inventor： Mariana Rodica Munteanu ,  Amith Kumar Murali ,  Kirk Hayes ,  Brian Josef Bartholomeusz

IPC: H01L21/00

CPC classification number: H01L31/1892 ,  H01L31/0322 ,  H01L31/0326 ,  H01L31/03928 ,  H01L31/1864 ,  Y02E10/541 ,  Y02P70/521

Abstract: In one embodiment, a method includes depositing a photoactive layer onto a first substrate, depositing a contact layer onto the photoactive layer, attaching a second substrate onto the contact layer, and removing the first substrate from the photoactive layer, contact layer, and second substrate.

Abstract translation: 在一个实施例中，一种方法包括将光敏层沉积到第一衬底上，将接触层沉积到光敏层上，将第二衬底附着到接触层上，以及从光敏层，接触层和第二衬底去除第一衬底 。

公开(公告)号：US08426722B2

公开(公告)日：2013-04-23

申请号：US11923036

申请日：2007-10-24

Applicant: Mariana R. Munteanu ,  Erol Girt

Inventor： Mariana R. Munteanu ,  Erol Girt

IPC: H01L31/00 ,  H01L27/14

CPC classification number: H01L31/03529 ,  B82Y20/00 ,  B82Y30/00 ,  H01L31/032 ,  H01L31/0352 ,  H01L31/0384 ,  H01L31/072 ,  H01L31/075 ,  H01L31/18 ,  H01L51/0037 ,  H01L51/426 ,  Y02E10/548

Abstract: Photovoltaic structures for the conversion of solar irradiance into electrical free energy. In a particular implementation, a photovoltaic cell includes a granular semiconductor and oxide layer with nanometer-size absorber semiconductor grains surrounded by a matrix of oxide. The semiconductor and oxide layer is disposed between electron and hole conducting layers. In some implementations, multiple semiconductor and oxide layers can be deposited.

公开(公告)号：US09103000B2

公开(公告)日：2015-08-11

申请号：US12953129

申请日：2010-11-23

Applicant: Mariana Munteanu ,  Brian Josef Bartholomeusz ,  Michael Bartholomeusz ,  Erol Girt

Inventor： Mariana Munteanu ,  Brian Josef Bartholomeusz ,  Michael Bartholomeusz ,  Erol Girt

IPC: C22C9/00 ,  C23C14/06 ,  C23C14/34 ,  C22C1/04 ,  C04B35/547 ,  C04B35/645 ,  C04B35/653

CPC classification number: C22C1/0491 ,  B22F2998/10 ,  C04B35/547 ,  C04B35/6455 ,  C04B35/653 ,  C04B2235/3201 ,  C04B2235/3206 ,  C04B2235/3217 ,  C04B2235/3232 ,  C04B2235/3239 ,  C04B2235/3244 ,  C04B2235/3251 ,  C04B2235/3256 ,  C04B2235/3258 ,  C04B2235/3262 ,  C04B2235/3281 ,  C04B2235/3284 ,  C04B2235/3286 ,  C04B2235/3289 ,  C04B2235/3293 ,  C04B2235/3296 ,  C04B2235/3298 ,  C04B2235/3418 ,  C04B2235/42 ,  C04B2235/446 ,  C04B2235/6565 ,  C04B2235/72 ,  C04B2235/721 ,  C04B2235/722 ,  C04B2235/723 ,  C04B2235/77 ,  C23C14/0623 ,  C23C14/3414 ,  C22C1/1084 ,  B22F3/10

Abstract: In one example embodiment, a sputter target structure for depositing semiconducting chalcogenide films is described. The sputter target includes a target body having a target body composition that comprises Cu1-x(Se1-y-zSyTez)x, wherein the value of x is greater than or equal to approximately 0.5, the value of y is between approximately 0 and approximately 1, the value of z is between approximately 0 and approximately 1, and the total amount of Se, S, and Te phases in the target body composition comprise less than 50 volume percent of the target body composition.

Abstract translation: 在一个示例性实施例中，描述了用于沉积半导体硫族化物膜的溅射靶结构。 溅射靶包括具有包含Cu1-x（Se1-y-zSyTez）x的靶体组成的靶体，其中x的值大于或等于约0.5，y的值在大约0和大约0之间 如图1所示，z的值在大约0和大约1之间，并且靶体组成中的Se，S和Te相的总量包含小于目标体组成的50体积％。

公开(公告)号：US20140318624A1

公开(公告)日：2014-10-30

申请号：US14263470

申请日：2014-04-28

Applicant: Zetta Research and Development LLC - AQT Series

Inventor： Brian Josef BARTHOLOMEUSZ ,  Michael BARTHOLOMEUSZ

IPC: H01L31/0216

CPC classification number: H01L31/02167 ,  H01L21/02425 ,  H01L21/02491 ,  H01L21/02568 ,  H01L21/02628 ,  H01L31/0322 ,  H01L31/0392 ,  H01L31/03923 ,  H01L31/03925 ,  H01L31/0749 ,  Y02E10/541

Abstract: In particular embodiments, a method is described for forming photovoltaic devices that includes providing a substrate suitable for use in a photovoltaic device, depositing a conductive contact layer over the substrate, depositing a salt solution over the surface of the conductive contact layer, the solution comprising a volatile solvent and an alkali metal salt solute, and depositing a semiconducting absorber layer over the solute residue left by the evaporated solvent.

Abstract translation: 在特定实施例中，描述了一种用于形成光伏器件的方法，其包括提供适合用于光伏器件的衬底，在衬底上沉积导电接触层，在导电接触层的表面上沉积盐溶液，该溶液包含 挥发性溶剂和碱金属盐溶质，并在被蒸发的溶剂留下的溶质残余物上沉积半导体吸收层。

公开(公告)号：US08373060B2

公开(公告)日：2013-02-12

申请号：US11923070

申请日：2007-10-24

Applicant: Mariana R. Munteanu ,  Erol Girt

Inventor： Mariana R. Munteanu ,  Erol Girt

IPC: H01L31/00 ,  H01L27/14

CPC classification number: H01L31/0256 ,  H01L31/032 ,  H01L31/0352 ,  H01L31/0384 ,  H01L31/072 ,  H01L31/18 ,  H01L51/0035 ,  H01L51/0053 ,  H01L51/422 ,  H01L51/4226 ,  H01L51/4253 ,  Y02E10/549 ,  Y02P70/521

Abstract: Photovoltaic structures for the conversion of solar irradiance into electrical free energy. In particular implementations, the novel photovoltaic structures can be fabricated using low cost and scalable processes, such as magnetron sputtering. In a particular implementation, a photovoltaic cell includes a photoactive conversion layer comprising one or more granular semiconductor and oxide layers with nanometer-size semiconductor grains surrounded by a matrix of oxide. The semiconductor and oxide layer can be a disposed between electrode layers. In some implementations, multiple semiconductor and oxide layers can be deposited. These so-called semiconductor and oxide layers absorb sun light and convert solar irradiance into electrical free energy.

Abstract translation: 用于将太阳辐射转化为电自由能的光伏结构。 在特定的实施方式中，新的光伏结构可以使用低成本和可扩展的工艺（例如磁控溅射）来制造。 在具体实施方案中，光伏电池包括光活化转换层，其包含一个或多个粒状半导体和具有由氧化物基体包围的纳米尺寸半导体晶粒的氧化物层。 半导体层和氧化物层可以设置在电极层之间。 在一些实施方案中，可以沉积多个半导体和氧化物层。 这些所谓的半导体和氧化物层吸收太阳光并将太阳辐射转化为电自由能。

公开(公告)号：US09390917B2

公开(公告)日：2016-07-12

申请号：US13401512

申请日：2012-02-21

Applicant: Vardaan Chawla ,  Mariana Rodica Munteanu

Inventor： Vardaan Chawla ,  Mariana Rodica Munteanu

IPC: H01L21/00 ,  H01L21/02 ,  H01L31/0224 ,  H01L31/032

CPC classification number: H01L21/02557 ,  H01L21/0256 ,  H01L21/02568 ,  H01L21/02614 ,  H01L31/022425 ,  H01L31/0322 ,  Y02E10/541 ,  Y02P70/521

Abstract: In one embodiment, a method includes depositing a CZT(S, Se) precursor layer onto a substrate, introducing a source-material layer comprising Sn(S, Se) into proximity with the precursor layer, and annealing the precursor layer in proximity with the source-material layer in a constrained volume.

Abstract translation: 在一个实施例中，一种方法包括将CZT（S，Se）前体层沉积到衬底上，将包含Sn（S，Se）的源材料层引入到与前体层接近的位置， 源材料层在约束体积中。

公开(公告)号：US08969719B2

公开(公告)日：2015-03-03

申请号：US12641893

申请日：2009-12-18

Applicant: Mariana Rodica Munteanu ,  Erol Girt

Inventor： Mariana Rodica Munteanu ,  Erol Girt

IPC: H01L31/00 ,  H01L31/032 ,  C23C14/00 ,  C23C14/06 ,  C23C14/34 ,  H01L31/0749

CPC classification number: H01L31/18 ,  C23C14/0057 ,  C23C14/0623 ,  C23C14/3407 ,  C23C14/3485 ,  C23C14/3492 ,  H01L31/0322 ,  H01L31/0749 ,  H01L31/1864 ,  Y02E10/541

Abstract: In one example embodiment, a method includes sputtering one or more absorber layers over a substrate. In a particular embodiment, the substrate is pre-heated to a substrate temperature of at least approximately 300 degrees Celsius prior to the sputtering and during the sputtering of each of one or more of the absorber layers, and the sputtering of at least one of the absorber layers is performed in a sputtering atmosphere having a pressure of at least 0.5 Pascals. Additionally, in a particular embodiment, the sputtering of at least one of the absorber layers comprises sputtering from a sputter target that comprises a chalcogenide alloy that comprises copper (Cu) and one or more of sulfur (S), selenium (Se), or tellurium (Te).

Abstract translation: 在一个示例性实施例中，一种方法包括在衬底上溅射一个或多个吸收层。 在特定实施例中，在溅射之前和在一个或多个吸收层中的每一个的溅射期间，将衬底预加热到至少约300摄氏度的衬底温度，并且将至少一个 吸收层在压力为至少0.5帕斯卡的溅射气氛中进行。 另外，在特定实施例中，至少一个吸收层的溅射包括溅射靶，该溅射靶包含硫族化物合金，其包含铜（Cu）和一种或多种硫（S），硒（Se）或 碲（Te）。