Invention Grant
US09390917B2 Closed-space sublimation process for production of CZTS thin-films
有权
用于生产CZTS薄膜的封闭空间升华工艺
- Patent Title: Closed-space sublimation process for production of CZTS thin-films
- Patent Title (中): 用于生产CZTS薄膜的封闭空间升华工艺
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Application No.: US13401512Application Date: 2012-02-21
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Publication No.: US09390917B2Publication Date: 2016-07-12
- Inventor: Vardaan Chawla , Mariana Rodica Munteanu
- Applicant: Vardaan Chawla , Mariana Rodica Munteanu
- Applicant Address: US DE Wilmington
- Assignee: ZETTA RESEARCH AND DEVELOPMENT LLC—AQT SERIES
- Current Assignee: ZETTA RESEARCH AND DEVELOPMENT LLC—AQT SERIES
- Current Assignee Address: US DE Wilmington
- Agency: Mattingly & Malur, PC
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L21/02 ; H01L31/0224 ; H01L31/032
Abstract:
In one embodiment, a method includes depositing a CZT(S, Se) precursor layer onto a substrate, introducing a source-material layer comprising Sn(S, Se) into proximity with the precursor layer, and annealing the precursor layer in proximity with the source-material layer in a constrained volume.
Public/Granted literature
- US20130217175A1 Closed-Space Sublimation Process for Production of CZTS Thin-Films Public/Granted day:2013-08-22
Information query
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