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公开(公告)号：US20130276888A1
公开(公告)日：2013-10-24
申请号：US13452603
申请日：2012-04-20
Applicant: Mariana Rodica Munteanu , Amith Kumar Murali , Kirk Hayes , Brian Josef Bartholomeusz
Inventor： Mariana Rodica Munteanu , Amith Kumar Murali , Kirk Hayes , Brian Josef Bartholomeusz
IPC: H01L31/0264 , H01L31/18
CPC classification number: H01L31/1892 , H01L31/0322 , H01L31/0326 , H01L31/03928 , H01L31/1864 , Y02E10/541 , Y02P70/521
Abstract: In one embodiment, a method includes depositing a photoactive layer onto a first substrate, depositing a contact layer onto the photoactive layer, attaching a second substrate onto the contact layer, and removing the first substrate from the photoactive layer, contact layer, and second substrate.
Abstract translation: 在一个实施例中，一种方法包括将光敏层沉积到第一衬底上，将接触层沉积到光敏层上，将第二衬底附着到接触层上，以及从光敏层，接触层和第二衬底去除第一衬底 。
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Patent Agency Ranking
2.发明申请公开(公告)号：US20130217176A1
公开(公告)日：2013-08-22
申请号：US13467868
申请日：2012-05-09
Applicant: Mariana Rodica Munteanu , Amith Kumar Murali , Brian Josef Bartholomeusz , Vardaan Chawla
CPC classification number: C23C16/56 , C23C14/0623 , C23C14/0629 , C23C14/5866 , C23C16/305 , C23C16/306 , H01L31/0322 , Y02E10/541 , Y02P70/521
Abstract: In one embodiment, a method includes depositing a chalcogenide precursor layer onto a substrate, introducing a cover into proximity with the precursor layer, and annealing the precursor layer in proximity with of the cover, where the annealing is performed in a constrained volume, and where the presence of the cover reduces decomposition of volatile species from the precursor layer during annealing.
Abstract translation: 在一个实施方案中，一种方法包括将硫族化物前体层沉积到基底上，将盖引入靠近前体层，以及使覆盖层附近的前体层退火，其中退火在约束体积内进行，其中 覆盖层的存在减少了退火过程中挥发物质从前体层的分解。
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公开(公告)号：US09238861B2
公开(公告)日：2016-01-19
申请号：US13467789
申请日：2012-05-09
Applicant: Mariana Rodica Munteanu , Amith Kumar Murali , Brian Josef Bartholomeusz , Vardaan Chawla
IPC: C23C14/06 , H01L21/02 , C23C14/24 , C23C14/56 , H01L31/032
CPC classification number: C23C14/0623 , C23C14/24 , C23C14/562 , H01L21/02422 , H01L21/02557 , H01L21/0256 , H01L21/02568 , H01L21/02614 , H01L31/0322 , Y02E10/541
Abstract: In one embodiment, a method includes depositing a CIGS precursor layer onto a substrate, introducing a source-material layer into proximity with the precursor layer, where the source-material layer includes one or more of Cu, In, or Ga, and one or more of S or Se, and annealing the precursor layer in proximity with of the source-material layer, where the annealing is performed in a constrained volume, and where the presence of the source-material layer reduces decomposition of volatile species from the precursor layer during annealing.
Abstract translation: 在一个实施例中，一种方法包括将CIGS前体层沉积到衬底上，将源材料层引入邻近于前体层，其中源材料层包括Cu，In或Ga中的一种或多种，以及一种或 更多的S或Se，并且在源材料层附近退火前体层，其中退火在约束体积中进行，并且其中源材料层的存在减少了来自前体层的挥发性物质的分解 在退火期间。
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4.发明授权公开(公告)号：US09157153B2
公开(公告)日：2015-10-13
申请号：US13467868
申请日：2012-05-09
Applicant: Mariana Rodica Munteanu , Amith Kumar Murali , Brian Josef Bartholomeusz , Vardaan Chawla
CPC classification number: C23C16/56 , C23C14/0623 , C23C14/0629 , C23C14/5866 , C23C16/305 , C23C16/306 , H01L31/0322 , Y02E10/541 , Y02P70/521
Abstract: In one embodiment, a method includes depositing a chalcogenide precursor layer onto a substrate, introducing a cover into proximity with the precursor layer, and annealing the precursor layer in proximity with of the cover, where the annealing is performed in a constrained volume, and where the presence of the cover reduces decomposition of volatile species from the precursor layer during annealing.
Abstract translation: 在一个实施方案中，一种方法包括将硫族化物前体层沉积到基底上，将盖引入靠近前体层，以及使覆盖层附近的前体层退火，其中退火在约束体积内进行，其中 覆盖层的存在减少了退火过程中挥发物质从前体层的分解。
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公开(公告)号：US20130217214A1
公开(公告)日：2013-08-22
申请号：US13467789
申请日：2012-05-09
Applicant: Mariana Rodica Munteanu , Amith Kumar Murali , Brian Josef Bartholomeusz , Vardaan Chawla
CPC classification number: C23C14/0623 , C23C14/24 , C23C14/562 , H01L21/02422 , H01L21/02557 , H01L21/0256 , H01L21/02568 , H01L21/02614 , H01L31/0322 , Y02E10/541
Abstract: In one embodiment, a method includes depositing a CIGS precursor layer onto a substrate, introducing a source-material layer into proximity with the precursor layer, where the source-material layer includes one or more of Cu, In, or Ga, and one or more of S or Se, and annealing the precursor layer in proximity with of the source-material layer, where the annealing is performed in a constrained volume, and where the presence of the source-material layer reduces decomposition of volatile species from the precursor layer during annealing.
Abstract translation: 在一个实施例中，一种方法包括将CIGS前体层沉积到衬底上，将源材料层引入邻近于前体层，其中源材料层包括Cu，In或Ga中的一种或多种，以及一种或 更多的S或Se，并且在源材料层附近退火前体层，其中退火在约束体积中进行，并且其中源材料层的存在减少了来自前体层的挥发性物质的分解 在退火期间。
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公开(公告)号：US08993370B2
公开(公告)日：2015-03-31
申请号：US13452603
申请日：2012-04-20
Applicant: Mariana Rodica Munteanu , Amith Kumar Murali , Kirk Hayes , Brian Josef Bartholomeusz
Inventor： Mariana Rodica Munteanu , Amith Kumar Murali , Kirk Hayes , Brian Josef Bartholomeusz
IPC: H01L21/00
CPC classification number: H01L31/1892 , H01L31/0322 , H01L31/0326 , H01L31/03928 , H01L31/1864 , Y02E10/541 , Y02P70/521
Abstract: In one embodiment, a method includes depositing a photoactive layer onto a first substrate, depositing a contact layer onto the photoactive layer, attaching a second substrate onto the contact layer, and removing the first substrate from the photoactive layer, contact layer, and second substrate.
Abstract translation: 在一个实施例中，一种方法包括将光敏层沉积到第一衬底上，将接触层沉积到光敏层上，将第二衬底附着到接触层上，以及从光敏层，接触层和第二衬底去除第一衬底 。
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