Low coupling oxide media (LCOM)
    1.
    发明授权
    Low coupling oxide media (LCOM) 有权
    低耦合氧化物介质(LCOM)

    公开(公告)号:US07867637B2

    公开(公告)日:2011-01-11

    申请号:US12272662

    申请日:2008-11-17

    CPC classification number: G11B5/66 G11B5/65 G11B5/667 G11B5/7325

    Abstract: A low-coupling perpendicular magnetic recording media comprising a magnetic storage layer and at least one low saturation magnetization layer. The magnetic storage layer has a saturation magnetization between about 400-900 emu/cm3 and the at least one low saturation magnetization layer has a saturation magnetization below that of the magnetic storage layer.

    Abstract translation: 一种低耦合垂直磁记录介质,包括磁存储层和至少一个低饱和磁化层。 磁存储层具有在约400-900emu / cm 3之间的饱和磁化强度,并且至少一个低饱和磁化层的饱和磁化强度低于磁存储层的饱和磁化强度。

    Low-coupling oxide media (LCOM)
    3.
    发明授权
    Low-coupling oxide media (LCOM) 有权
    低耦合氧化物介质(LCOM)

    公开(公告)号:US08709619B2

    公开(公告)日:2014-04-29

    申请号:US13601553

    申请日:2012-08-31

    CPC classification number: G11B5/66 G11B5/65 G11B5/667 G11B5/7325

    Abstract: A low-coupling perpendicular magnetic recording media comprising a magnetic storage layer and at least one low saturation magnetization layer. The magnetic storage layer has a saturation magnetization between about 400-900 emu/cm3 and the at least one low saturation magnetization layer has a saturation magnetization below that of the magnetic storage layer.

    Abstract translation: 一种低耦合垂直磁记录介质,包括磁存储层和至少一个低饱和磁化层。 磁存储层具有在约400-900emu / cm 3之间的饱和磁化强度,并且至少一个低饱和磁化层的饱和磁化强度低于磁存储层的饱和磁化强度。

    Low-Coupling Oxide Media (LCOM)
    4.
    发明申请
    Low-Coupling Oxide Media (LCOM) 有权
    低耦合氧化物介质(LCOM)

    公开(公告)号:US20130045394A1

    公开(公告)日:2013-02-21

    申请号:US13601553

    申请日:2012-08-31

    CPC classification number: G11B5/66 G11B5/65 G11B5/667 G11B5/7325

    Abstract: A low-coupling perpendicular magnetic recording media comprising a magnetic storage layer and at least one low saturation magnetization layer. The magnetic storage layer has a saturation magnetization between about 400-900 emu/cm3 and the at least one low saturation magnetization layer has a saturation magnetization below that of the magnetic storage layer.

    Abstract translation: 一种低耦合垂直磁记录介质,包括磁存储层和至少一个低饱和磁化层。 磁存储层具有在约400-900emu / cm 3之间的饱和磁化强度,并且至少一个低饱和磁化层的饱和磁化强度低于磁存储层的饱和磁化强度。

    Semiconductor grain microstructures for photovoltaic cells
    5.
    发明授权
    Semiconductor grain microstructures for photovoltaic cells 有权
    光伏电池半导体晶粒微观结构

    公开(公告)号:US08373060B2

    公开(公告)日:2013-02-12

    申请号:US11923070

    申请日:2007-10-24

    Abstract: Photovoltaic structures for the conversion of solar irradiance into electrical free energy. In particular implementations, the novel photovoltaic structures can be fabricated using low cost and scalable processes, such as magnetron sputtering. In a particular implementation, a photovoltaic cell includes a photoactive conversion layer comprising one or more granular semiconductor and oxide layers with nanometer-size semiconductor grains surrounded by a matrix of oxide. The semiconductor and oxide layer can be a disposed between electrode layers. In some implementations, multiple semiconductor and oxide layers can be deposited. These so-called semiconductor and oxide layers absorb sun light and convert solar irradiance into electrical free energy.

    Abstract translation: 用于将太阳辐射转化为电自由能的光伏结构。 在特定的实施方式中,新的光伏结构可以使用低成本和可扩展的工艺(例如磁控溅射)来制造。 在具体实施方案中,光伏电池包括光活化转换层,其包含一个或多个粒状半导体和具有由氧化物基体包围的纳米尺寸半导体晶粒的氧化物层。 半导体层和氧化物层可以设置在电极层之间。 在一些实施方案中,可以沉积多个半导体和氧化物层。 这些所谓的半导体和氧化物层吸收太阳光并将太阳辐射转化为电自由能。

    Low-coupling oxide media (LCOM)
    6.
    发明授权
    Low-coupling oxide media (LCOM) 有权
    低耦合氧化物介质(LCOM)

    公开(公告)号:US08257844B2

    公开(公告)日:2012-09-04

    申请号:US12963244

    申请日:2010-12-08

    CPC classification number: G11B5/66 G11B5/65 G11B5/667 G11B5/7325

    Abstract: A low-coupling perpendicular magnetic recording media comprising a magnetic storage layer and at least one low saturation magnetization layer. The magnetic storage layer has a saturation magnetization between about 400-900 emu/cm3 and the at least one low saturation magnetization layer has a saturation magnetization below that of the magnetic storage layer.

    Abstract translation: 一种低耦合垂直磁记录介质,包括磁存储层和至少一个低饱和磁化层。 磁存储层具有在约400-900emu / cm 3之间的饱和磁化强度,并且至少一个低饱和磁化层的饱和磁化强度低于磁存储层的饱和磁化强度。

    Low-Coupling Oxide Media (LCOM)
    9.
    发明申请
    Low-Coupling Oxide Media (LCOM) 有权
    低耦合氧化物介质(LCOM)

    公开(公告)号:US20110076515A1

    公开(公告)日:2011-03-31

    申请号:US12963244

    申请日:2010-12-08

    CPC classification number: G11B5/66 G11B5/65 G11B5/667 G11B5/7325

    Abstract: A low-coupling perpendicular magnetic recording media comprising a magnetic storage layer and at least one low saturation magnetization layer. The magnetic storage layer has a saturation magnetization between about 400-900 emu/cm3 and the at least one low saturation magnetization layer has a saturation magnetization below that of the magnetic storage layer.

    Abstract translation: 一种低耦合垂直磁记录介质,包括磁存储层和至少一个低饱和磁化层。 磁存储层具有在约400-900emu / cm 3之间的饱和磁化强度,并且至少一个低饱和磁化层的饱和磁化强度低于磁存储层的饱和磁化强度。

    CrB and CrMoB as third underlayer to refine grains
    10.
    发明授权
    CrB and CrMoB as third underlayer to refine grains 失效
    CrB和CrMoB作为第三个底层来细化晶粒

    公开(公告)号:US07157161B1

    公开(公告)日:2007-01-02

    申请号:US10854433

    申请日:2004-05-27

    CPC classification number: G11B5/7325 G11B5/656

    Abstract: The Hr and SNR of a magnetic recording medium are increased and the signal pulse narrowed by employing a tri-layer underlayer structure containing Cr or a Cr alloy wherein the second underlayer contains Cr and B, the first underlayer preferably contains substantially pure Cr, and the third underlayer preferably contains a ternary alloy of Cr.

    Abstract translation: 通过使用含有Cr或Cr合金的三层底层结构,磁记录介质的Hr和SNR增加,信号脉冲变窄,其中第二底层含有Cr和B,第一底层优选含有基本上纯的Cr, 第三底层优选含有Cr的三元合金。

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