Abstract:
A low-coupling perpendicular magnetic recording media comprising a magnetic storage layer and at least one low saturation magnetization layer. The magnetic storage layer has a saturation magnetization between about 400-900 emu/cm3 and the at least one low saturation magnetization layer has a saturation magnetization below that of the magnetic storage layer.
Abstract translation:一种低耦合垂直磁记录介质,包括磁存储层和至少一个低饱和磁化层。 磁存储层具有在约400-900emu / cm 3之间的饱和磁化强度,并且至少一个低饱和磁化层的饱和磁化强度低于磁存储层的饱和磁化强度。
Abstract:
A perpendicular magnetic recording medium having a dual-layer magnetic film is disclosed. The bottom layer is completely exchange decoupled, and the top layer contains a certain amount of exchange coupling optimized for recording performance. Preferably, the bottom magnetic layer contains stable oxide material (for example, TiO2) and other non-magnetic elements (for example, Cr). A method of manufacturing the media is also disclosed.
Abstract:
A low-coupling perpendicular magnetic recording media comprising a magnetic storage layer and at least one low saturation magnetization layer. The magnetic storage layer has a saturation magnetization between about 400-900 emu/cm3 and the at least one low saturation magnetization layer has a saturation magnetization below that of the magnetic storage layer.
Abstract translation:一种低耦合垂直磁记录介质,包括磁存储层和至少一个低饱和磁化层。 磁存储层具有在约400-900emu / cm 3之间的饱和磁化强度,并且至少一个低饱和磁化层的饱和磁化强度低于磁存储层的饱和磁化强度。
Abstract:
A low-coupling perpendicular magnetic recording media comprising a magnetic storage layer and at least one low saturation magnetization layer. The magnetic storage layer has a saturation magnetization between about 400-900 emu/cm3 and the at least one low saturation magnetization layer has a saturation magnetization below that of the magnetic storage layer.
Abstract translation:一种低耦合垂直磁记录介质,包括磁存储层和至少一个低饱和磁化层。 磁存储层具有在约400-900emu / cm 3之间的饱和磁化强度,并且至少一个低饱和磁化层的饱和磁化强度低于磁存储层的饱和磁化强度。
Abstract:
Photovoltaic structures for the conversion of solar irradiance into electrical free energy. In particular implementations, the novel photovoltaic structures can be fabricated using low cost and scalable processes, such as magnetron sputtering. In a particular implementation, a photovoltaic cell includes a photoactive conversion layer comprising one or more granular semiconductor and oxide layers with nanometer-size semiconductor grains surrounded by a matrix of oxide. The semiconductor and oxide layer can be a disposed between electrode layers. In some implementations, multiple semiconductor and oxide layers can be deposited. These so-called semiconductor and oxide layers absorb sun light and convert solar irradiance into electrical free energy.
Abstract:
A low-coupling perpendicular magnetic recording media comprising a magnetic storage layer and at least one low saturation magnetization layer. The magnetic storage layer has a saturation magnetization between about 400-900 emu/cm3 and the at least one low saturation magnetization layer has a saturation magnetization below that of the magnetic storage layer.
Abstract translation:一种低耦合垂直磁记录介质,包括磁存储层和至少一个低饱和磁化层。 磁存储层具有在约400-900emu / cm 3之间的饱和磁化强度,并且至少一个低饱和磁化层的饱和磁化强度低于磁存储层的饱和磁化强度。
Abstract:
An embodiment of the invention relates to a perpendicular magnetic recording medium comprising (1) a substrate, (2) an interlayer comprising hexagonal columns and (3) a magnetic layer, wherein the magnetic layer is deposited applying a bias voltage to the substrate such that the magnetic layer comprises magnetic grains having substantially no sub-grains within the magnetic layer, and the magnetic layer has perpendicular magnetic anisotropy.
Abstract:
A low-coupling perpendicular magnetic recording media comprising a magnetic storage layer and at least one low saturation magnetization layer. The magnetic storage layer has a saturation magnetization between about 400-900 emu/cm3 and the at least one low saturation magnetization layer has a saturation magnetization below that of the magnetic storage layer.
Abstract:
A low-coupling perpendicular magnetic recording media comprising a magnetic storage layer and at least one low saturation magnetization layer. The magnetic storage layer has a saturation magnetization between about 400-900 emu/cm3 and the at least one low saturation magnetization layer has a saturation magnetization below that of the magnetic storage layer.
Abstract translation:一种低耦合垂直磁记录介质,包括磁存储层和至少一个低饱和磁化层。 磁存储层具有在约400-900emu / cm 3之间的饱和磁化强度,并且至少一个低饱和磁化层的饱和磁化强度低于磁存储层的饱和磁化强度。
Abstract:
The Hr and SNR of a magnetic recording medium are increased and the signal pulse narrowed by employing a tri-layer underlayer structure containing Cr or a Cr alloy wherein the second underlayer contains Cr and B, the first underlayer preferably contains substantially pure Cr, and the third underlayer preferably contains a ternary alloy of Cr.