公开(公告)号：US3581161A

公开(公告)日：1971-05-25

申请号：US3581161D

申请日：1969-01-02

Applicant: TEXAS INSTRUMENTS INC

Inventor： CUNNINGHAM JAMES A ,  CLARK ROBERT S

IPC: H01L21/00 ,  H01L23/29 ,  H01L23/485 ,  H01L23/522 ,  H01L5/02

CPC classification number: H01L23/485 ,  H01L21/00 ,  H01L23/291 ,  H01L23/522 ,  H01L2924/0002 ,  H01L2924/00

Abstract: There is disclosed a multilevel contact and interconnection system for integrated circuits comprising at least three levels. Ohmically connecting to the semiconductor through an opening in its insulating layer is a first layer of molybdenum. The second layer is of gold and the third of molybdenum. This system is virtually alloyless since the molybdenum does not alloy with the semiconductor material or the gold.

公开(公告)号：US3562610A

公开(公告)日：1971-02-09

申请号：US3562610D

申请日：1969-07-01

Applicant: WESTINGHOUSE ELECTRIC CORP

Inventor： STEHNEY THOMAS G

IPC: H01L29/423 ,  H01L29/744 ,  H01L5/02

CPC classification number: H01L29/42308 ,  H01L29/744

Abstract: This is a continuation of U.S. Pat. No. 641,367 filed May 25, 1967 and now abandoned. This invention relates to a gate controlled PNPN semiconductor device having turnoff capability, and more particularly to a turnoff thyristor having both low current gain characteristics and high reverse gate to cathode emitter voltage characteristics. In this device an emitter region is formed in a base region by diffusion and gate contacts are alloyed through the emitter region to the base region.

公开(公告)号：US3559003A

公开(公告)日：1971-01-26

申请号：US3559003D

申请日：1969-01-03

Applicant: IBM

Inventor： BEAUDOUIN PIERRE L ,  GLANG REINHARD ,  RISEMAN JACOB

IPC: H01L29/43 ,  H01L21/00 ,  H01L21/28 ,  H01L23/485 ,  H01L23/522 ,  H01L1/14 ,  H01L5/02

CPC classification number: H01L23/485 ,  H01L21/00 ,  H01L23/522 ,  H01L2924/0002 ,  H01L2924/00

Abstract: THE PROCESS FOR MAKING, AND THE STRUCTURE OF, AN INTERCONNECTION AND RESISTOR NETWORK UPON A SEMICONDUCTOR SURFACE. THIS NETWORK INCLUDES OHMIC CONTACTS TO THE SEMICONDUCTOR WHICH COMPRISE THE COMBINATION OF A CR-SIO CERMET MATERIAL HAVING A COPPER CONDUCTOR THEREON. THIS COMBINATION OF MATERIALS IS ALSO UTILIZED FOR INTERCONNECTIONS BETWEEN OHMIC CONTACTS. WHERE A RESISTOR IS DESIRED ALONG A INTERCONNECTION LINE, THE COPPER CONDUCTOR IS REMOVED, CAUSING THE CURRENT, WHEN AN ELECTRIC FIELD IS APPLIED, TO PASS THROUGH THE CERMET MATERIAL WHICH NOW FUNCTIONS AS A RESISTOR.

公开(公告)号：US3553539A

公开(公告)日：1971-01-05

申请号：US3553539D

申请日：1968-11-15

Applicant: MATSUSHITA ELECTRONICS CORP

Inventor： NAKASHIMA SHINICHI ,  TAKESHIMA MASUMI ,  MIYAI YUKIO

IPC: B65D41/46 ,  H01L21/00 ,  H01L29/00 ,  H01L29/86 ,  H03B9/12 ,  H01L5/02

CPC classification number: H01L29/86 ,  B65D41/46 ,  H01L21/00 ,  H01L29/00 ,  H03B9/12 ,  Y10S438/965

Abstract: A PLANAR TYPE MICROWAVE-OSCILLATING SEMICONDUCTOR DIODE HAVING A PN JUNCTION IN A SEMICONDUCTOR SUBSTRATE. THE PN JUNCTION HAS THE SHAPE OF A SPHERICAL SURFACE EXTENDING INTO THE SUBSTRATE AT ITS CENTER TO A DEPTH D WHICH IS AT LEAST ONE FOURTH OF THE RADIUS R AT THE SURFACE OF SAID SUBTRATE. SUCH A SEMICONDUCTOR DIODE HAS INCREASED OSCILLATION FREQUENCY AND OUTPUT POWER. THE DIODE CAN BE MADE BY FORMING A DIFFUSION PREVENTING MASK ON A GERMANIUM SUBSTRATE OF A CERTAIN TYPE OF ELECTRIC CONDUCTIVITY HAVING AN IMPURITY CONCENTRATION RANGING FROM 1X10**14 TO 1X10**18 ATOMS/CM3, AND BY DEEPLY DIFFUSING THROUGH A SMALL DIFFUSION HOLE IN SAID MASK AN IMPURITY WHICH WILL MAKE THE CONDUCTIVITY OPPOSITE TO THAT OF SAID SUBSTRATE.

公开(公告)号：US3550262A

公开(公告)日：1970-12-29

申请号：US3550262D

申请日：1967-12-01

Applicant: SIEMENS AG

Inventor： PUTTER LOTHAR ,  RIERMEIER MANFRED

IPC: H01L21/00 ,  H01L21/48 ,  H01L21/52 ,  H01L21/60 ,  H01L23/051 ,  H01L23/31 ,  B01J17/00 ,  H01L1/14 ,  H01L5/02

CPC classification number: H01L24/26 ,  H01L21/00 ,  H01L21/4821 ,  H01L21/52 ,  H01L23/051 ,  H01L23/3157 ,  H01L24/83 ,  H01L2224/8319 ,  H01L2224/83801 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/01027 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/0105 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/12036 ,  Y10T29/49169 ,  Y10T29/49171 ,  Y10T29/4981 ,  H01L2924/00

公开(公告)号：US3532944A

公开(公告)日：1970-10-06

申请号：US3532944D

申请日：1966-11-04

Applicant: RCA CORP

Inventor： OLLENDORF JOEL ,  JONES FREDERICK P

IPC: H01L21/00 ,  H01L23/433 ,  H01L23/488 ,  H01L5/02

CPC classification number: H01L24/32 ,  H01L21/00 ,  H01L23/4334 ,  H01L23/488 ,  H01L24/48 ,  H01L24/83 ,  H01L2224/26175 ,  H01L2224/32014 ,  H01L2224/32057 ,  H01L2224/4847 ,  H01L2224/8319 ,  H01L2224/83191 ,  H01L2224/83385 ,  H01L2224/838 ,  H01L2224/8592 ,  H01L2224/92247 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/0105 ,  H01L2924/01074 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2224/05599 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

公开(公告)号：US3513359A

公开(公告)日：1970-05-19

申请号：US3513359D

申请日：1967-11-29

Applicant: ASS ELECT IND

Inventor： LEWIS COLIN BRIGHT

IPC: H01L21/00 ,  H01L21/24 ,  H01L23/02 ,  H01L23/06 ,  H01L23/10 ,  H01L23/48 ,  H01L1/14 ,  H01L5/02

CPC classification number: H01L23/10 ,  H01L21/00 ,  H01L21/24 ,  H01L23/02 ,  H01L23/06 ,  H01L23/48 ,  H01L2924/0002 ,  H01L2924/01079 ,  H01L2924/00

公开(公告)号：US3509429A

公开(公告)日：1970-04-28

申请号：US3509429D

申请日：1968-01-15

Applicant: IBM

Inventor： CRAIG RAYMOND M ,  CROWE JAMES W ,  WILKIE EARL L

IPC: H01L23/36 ,  H01L5/02

CPC classification number: H01L23/36 ,  H01L2924/0002 ,  H01L2924/00

公开(公告)号：US3501679A

公开(公告)日：1970-03-17

申请号：US3501679D

申请日：1968-02-26

Applicant: NIPPON ELECTRIC CO

Inventor： YONEZU HIROO ,  KAWAJI AKIRA

IPC: H01L21/208 ,  H01L33/00 ,  H01S5/183 ,  H01S5/30 ,  H01S5/32 ,  H01L5/02 ,  H01S3/18

CPC classification number: H01S5/32 ,  H01L21/02395 ,  H01L21/02546 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/02625 ,  H01L21/02628 ,  H01L33/00 ,  H01S5/30

公开(公告)号：US3462655A

公开(公告)日：1969-08-19

申请号：US3462655D

申请日：1967-12-01

Applicant: INT RECTIFIER CORP

Inventor： COBLENZ ABRAHAM G

IPC: H01L21/00 ,  H01L23/31 ,  H01L27/00 ,  H01L5/02

CPC classification number: H01L23/3157 ,  H01L21/00 ,  H01L27/00 ,  H01L2924/0002 ,  Y10S257/909 ,  H01L2924/00