公开(公告)号：US3559003A

公开(公告)日：1971-01-26

申请号：US3559003D

申请日：1969-01-03

Applicant: IBM

Inventor： BEAUDOUIN PIERRE L ,  GLANG REINHARD ,  RISEMAN JACOB

IPC: H01L29/43 ,  H01L21/00 ,  H01L21/28 ,  H01L23/485 ,  H01L23/522 ,  H01L1/14 ,  H01L5/02

CPC classification number: H01L23/485 ,  H01L21/00 ,  H01L23/522 ,  H01L2924/0002 ,  H01L2924/00

Abstract: THE PROCESS FOR MAKING, AND THE STRUCTURE OF, AN INTERCONNECTION AND RESISTOR NETWORK UPON A SEMICONDUCTOR SURFACE. THIS NETWORK INCLUDES OHMIC CONTACTS TO THE SEMICONDUCTOR WHICH COMPRISE THE COMBINATION OF A CR-SIO CERMET MATERIAL HAVING A COPPER CONDUCTOR THEREON. THIS COMBINATION OF MATERIALS IS ALSO UTILIZED FOR INTERCONNECTIONS BETWEEN OHMIC CONTACTS. WHERE A RESISTOR IS DESIRED ALONG A INTERCONNECTION LINE, THE COPPER CONDUCTOR IS REMOVED, CAUSING THE CURRENT, WHEN AN ELECTRIC FIELD IS APPLIED, TO PASS THROUGH THE CERMET MATERIAL WHICH NOW FUNCTIONS AS A RESISTOR.