Invention Grant
- Patent Title: Universal metallurgy for semiconductor materials
- Patent Title (中): 用于半导体材料的通用金属
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Application No.: US3559003DApplication Date: 1969-01-03
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Publication No.: US3559003APublication Date: 1971-01-26
- Inventor: BEAUDOUIN PIERRE L , GLANG REINHARD , RISEMAN JACOB
- Applicant: IBM
- Assignee: Ibm
- Current Assignee: Ibm
- Priority: US78882269 1969-01-03
- Main IPC: H01L29/43
- IPC: H01L29/43 ; H01L21/00 ; H01L21/28 ; H01L23/485 ; H01L23/522 ; H01L1/14 ; H01L5/02
Abstract:
THE PROCESS FOR MAKING, AND THE STRUCTURE OF, AN INTERCONNECTION AND RESISTOR NETWORK UPON A SEMICONDUCTOR SURFACE. THIS NETWORK INCLUDES OHMIC CONTACTS TO THE SEMICONDUCTOR WHICH COMPRISE THE COMBINATION OF A CR-SIO CERMET MATERIAL HAVING A COPPER CONDUCTOR THEREON. THIS COMBINATION OF MATERIALS IS ALSO UTILIZED FOR INTERCONNECTIONS BETWEEN OHMIC CONTACTS. WHERE A RESISTOR IS DESIRED ALONG A INTERCONNECTION LINE, THE COPPER CONDUCTOR IS REMOVED, CAUSING THE CURRENT, WHEN AN ELECTRIC FIELD IS APPLIED, TO PASS THROUGH THE CERMET MATERIAL WHICH NOW FUNCTIONS AS A RESISTOR.
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