公开(公告)号：US08889519B2

公开(公告)日：2014-11-18

申请号：US13812499

申请日：2012-10-12

申请人： Xiaolong Ma ,  Huaxiang Yin ,  Zuozhen Fu

发明人： Xiaolong Ma ,  Huaxiang Yin ,  Zuozhen Fu

IPC分类号： H01L21/336 ,  H01L29/66 ,  H01L29/78 ,  H01L29/161 ,  H01L21/02 ,  H01L21/265 ,  H01L29/10 ,  H01L29/165 ,  H01L21/268 ,  H01L29/51

CPC分类号： H01L29/66477 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/02452 ,  H01L21/02532 ,  H01L21/02535 ,  H01L21/02675 ,  H01L21/26506 ,  H01L21/268 ,  H01L29/1054 ,  H01L29/161 ,  H01L29/165 ,  H01L29/517 ,  H01L29/665 ,  H01L29/66575 ,  H01L29/66651 ,  H01L29/66659 ,  H01L29/78 ,  H01L29/7848

摘要： The present invention discloses a semiconductor device, comprising: a substrate, a gate stack structure on the substrate, source and drain regions in the substrate on both sides of the gate stack structure, and a channel region between the source and drain regions in the substrate, characterized in that at least one of the source and drain regions comprises a GeSn alloy. In accordance with the semiconductor device and method for manufacturing the same of the present invention, GeSn stressed source and drain regions with high concentration of Sn is formed by implanting precursors and performing a laser rapid annealing, thus the device carrier mobility of the channel region is effectively enhanced and the device drive capability is further improved.

摘要翻译： 本发明公开了一种半导体器件，包括：衬底，衬底上的栅极堆叠结构，栅极堆叠结构两侧的衬底中的源极和漏极区域以及衬底中的源极和漏极区域之间的沟道区域 其特征在于源区和漏区中的至少一个包括GeSn合金。 根据本发明的半导体器件及其制造方法，通过注入前体并进行激光快速退火形成GeSn应力的高浓度Sn的源区和漏极区，因此沟道区的器件载流子迁移率为 有效提高了设备​​驱动能力。

公开(公告)号：US20140087544A1

公开(公告)日：2014-03-27

申请号：US13783762

申请日：2013-03-04

申请人： ASM AMERICA, INC.

发明人： John Tolle

IPC分类号： H01L21/02

CPC分类号： H01L21/02384 ,  C23C16/18 ,  C23C16/30 ,  H01L21/02532 ,  H01L21/02535 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262

摘要： Sn-containing precursors for deposition of Sn-containing films and methods of using are provided herein. In some embodiments, Sn-containing precursors are methylated and/or hydrogenated and/or deuteriated. In some embodiments, methods of chemical vapor deposition are provided.

摘要翻译： 本文提供了含Sn的膜沉积前体和使用方法。 在一些实施方案中，含Sn前体被甲基化和/或氢化和/或氘化。 在一些实施例中，提供了化学气相沉积的方法。

公开(公告)号：US08647439B2

公开(公告)日：2014-02-11

申请号：US13456500

申请日：2012-04-26

申请人： Errol Antonio C. Sanchez ,  Yi-Chiau Huang

发明人： Errol Antonio C. Sanchez ,  Yi-Chiau Huang

IPC分类号： H01L21/3065 ,  H01L21/306

CPC分类号： H01L21/02661 ,  H01L21/0245 ,  H01L21/02452 ,  H01L21/02532 ,  H01L21/02535 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/3065

摘要： Methods of preparing a clean surface of germanium tin or silicon germanium tin layers for subsequent deposition are provided. An overlayer of Ge, doped Ge, another GeSn or SiGeSn layer, a doped GeSn or SiGeSn layer, an insulator, or a metal can be deposited on a prepared GeSn or SiGeSn layer by positioning a substrate with an exposed germanium tin or silicon germanium tin layer in a processing chamber, heating the processing chamber and flowing a halide gas into the processing chamber to etch the surface of the substrate using either thermal or plasma assisted etching followed by depositing an overlayer on the substantially oxide free and contaminant free surface. Methods can also include the placement and etching of a sacrificial layer, a thermal clean using rapid thermal annealing, or a process in a plasma of nitrogen trifluoride and ammonia gas.

摘要翻译： 提供了制备用于后续沉积的锗锡或硅锗锡层的洁净表面的方法。 通过用暴露的锗锡或硅锗锡定位衬底，可以在制备的GeSn或SiGeSn层上沉积Ge，掺杂Ge，另一GeSn或SiGeSn层，掺杂GeSn或SiGeSn层，绝缘体或金属的覆盖层 层，加热处理室并使卤化物气体流入处理室，以使用热或等离子体辅助蚀刻来蚀刻衬底的表面，随后在基本上无氧化物和无污染物的表面上沉积覆盖层。 方法还可以包括牺牲层的放置和蚀刻，使用快速热退火的热清洁，或三氟化氮和氨气的等离子体中的工艺。

公开(公告)号：US20140020619A1

公开(公告)日：2014-01-23

申请号：US14008560

申请日：2012-03-29

申请人： Benjamin Vincent ,  Federica Gencarelli ,  Roger Loo ,  Matty Caymax

发明人： Benjamin Vincent ,  Federica Gencarelli ,  Roger Loo ,  Matty Caymax

IPC分类号： H01L21/02

CPC分类号： H01L21/02535 ,  B33Y80/00 ,  H01L21/0245 ,  H01L21/02532 ,  H01L21/0262 ,  H01L31/02 ,  H01L31/048 ,  H01L31/055 ,  Y02E10/52

摘要： Disclosed are methods for growing Sn-containing semiconductor materials. In some embodiments, an example method includes providing a substrate in a chemical vapor deposition (CVD) reactor, and providing a semiconductor material precursor, a Sn precursor, and a carrier gas in the CVD reactor. The method further includes epitaxially growing a Sn-containing semiconductor material on the substrate, where the Sn precursor comprises tin tetrachloride (SnCl4). The semiconductor material precursor may be, for example, digermane, trigermane, higher-order germanium precursors, or a combination thereof. Alternatively, the semiconductor material precursor may be a silicon precursor.

摘要翻译： 公开了用于生长含Sn半导体材料的方法。 在一些实施例中，示例性方法包括在化学气相沉积（CVD）反应器中提供衬底，以及在CVD反应器中提供半导体材料前体，Sn前体和载气。 该方法还包括在衬底上外延生长含Sn半导体材料，其中Sn前体包括四氯化锡（SnCl 4）。 半导体材料前体可以是例如二摩尔，三面体，高级锗前体，或其组合。 或者，半导体材料前体可以是硅前体。

公开(公告)号：US20130330911A1

公开(公告)日：2013-12-12

申请号：US13796061

申请日：2013-03-12

申请人： Yi-Chiau HUANG ,  Yihwan KIM ,  Errol Antonio C. SANCHEZ

发明人： Yi-Chiau HUANG ,  Yihwan KIM ,  Errol Antonio C. SANCHEZ

IPC分类号： H01L21/02

CPC分类号： H01L21/02535 ,  C30B25/02 ,  C30B29/52 ,  C30B31/06 ,  C30B33/02 ,  C30B33/12 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02664 ,  H01L29/7848

摘要： Embodiments of the invention generally relate to methods for forming silicon-germanium-tin alloy epitaxial layers, germanium-tin alloy epitaxial layers, and germanium epitaxial layers that may be doped with boron, phosphorus, arsenic, or other n-type or p-type dopants. The methods generally include positioning a substrate in a processing chamber. A germanium precursor gas is then introduced into the chamber concurrently with a stressor precursor gas, such as a tin precursor gas, to form an epitaxial layer. The flow of the germanium gas is then halted, and an etchant gas is introduced into the chamber. An etch back is then performed while in the presence of the stressor precursor gas used in the formation of the epitaxial film. The flow of the etchant gas is then stopped, and the cycle may then be repeated. In addition to or as an alternative to the etch back process, an annealing processing may be performed.

摘要翻译： 本发明的实施方案一般涉及用于形成硅 - 锗 - 锡合金外延层，锗 - 锡合金外延层和可以掺杂有硼，磷，砷或其它n型或p型的锗外延层的锗外延层的方法 掺杂剂 所述方法通常包括将基底定位在处理室中。 然后将锗前体气体与诸如锡前体气体的应激源前体气体同时引入室中，以形成外延层。 然后停止锗气体的流动，并且将蚀刻剂气体引入室中。 然后在存在用于形成外延膜的应力源前体气体的同时进行回蚀。 然后停止蚀刻剂气体的流动，然后可以重复该循环。 除了或作为回蚀刻工艺的替代方案，可以进行退火处理。

公开(公告)号：US20130288480A1

公开(公告)日：2013-10-31

申请号：US13456500

申请日：2012-04-26

申请人： ERROL ANTONIO C. SANCHEZ ,  YI-CHIAU HUANG

发明人： ERROL ANTONIO C. SANCHEZ ,  YI-CHIAU HUANG

IPC分类号： H01L21/3065 ,  H01L21/306

CPC分类号： H01L21/02661 ,  H01L21/0245 ,  H01L21/02452 ,  H01L21/02532 ,  H01L21/02535 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/3065

摘要： Methods of preparing a clean surface of germanium tin or silicon germanium tin layers for subsequent deposition are provided. An overlayer of Ge, doped Ge, another GeSn or SiGeSn layer, a doped GeSn or SiGeSn layer, an insulator, or a metal can be deposited on a prepared GeSn or SiGeSn layer by positioning a substrate with an exposed germanium tin or silicon germanium tin layer in a processing chamber, heating the processing chamber and flowing a halide gas into the processing chamber to etch the surface of the substrate using either thermal or plasma assisted etching followed by depositing an overlayer on the substantially oxide free and contaminant free surface. Methods can also include the placement and etching of a sacrificial layer, a thermal clean using rapid thermal annealing, or a process in a plasma of nitrogen trifluoride and ammonia gas.

摘要翻译： 提供了制备用于后续沉积的锗锡或硅锗锡层的洁净表面的方法。 通过用暴露的锗锡或硅锗锡定位衬底，可以在制备的GeSn或SiGeSn层上沉积Ge，掺杂Ge，另一GeSn或SiGeSn层，掺杂GeSn或SiGeSn层，绝缘体或金属的覆盖层 层，加热处理室并使卤化物气体流入处理室，以使用热或等离子体辅助蚀刻来蚀刻衬底的表面，随后在基本上无氧化物和无污染物的表面上沉积覆盖层。 方法还可以包括牺牲层的放置和蚀刻，使用快速热退火的热清洁，或三氟化氮和氨气的等离子体中的工艺。

公开(公告)号：US20130049101A1

公开(公告)日：2013-02-28

申请号：US13221160

申请日：2011-08-30

申请人： Wen Chu HSIAO ,  Ju Wen HSIAO ,  Ying Min CHOU ,  Hsiang Hsiang KO ,  Ying-Lang WANG

发明人： Wen Chu HSIAO ,  Ju Wen HSIAO ,  Ying Min CHOU ,  Hsiang Hsiang KO ,  Ying-Lang WANG

IPC分类号： H01L29/78 ,  H01L21/336

CPC分类号： H01L29/66636 ,  H01L21/02529 ,  H01L21/02532 ,  H01L21/02535 ,  H01L21/0262 ,  H01L21/30604 ,  H01L29/165 ,  H01L29/167 ,  H01L29/7834 ,  H01L29/7848

摘要： A semiconductor structure and method for forming the same provide a high mobility stressor material suitable for use as source/drain regions or other active devices. The structure is formed in a substrate opening and is doped with an impurity such as boron in upper portions but is void of the impurity in regions that contact the surfaces of the opening. The structure is therefore resistant to out-diffusion of the dopant impurity during high temperature operations and may be formed through selective deposition using reduced pressure chemical vapor deposition or reduced pressure epitaxial deposition.

摘要翻译： 半导体结构及其形成方法提供适合用作源极/漏极区域或其它有源器件的高迁移率应力源材料。 该结构形成在衬底开口中，并且在上部掺杂有诸如硼的杂质，但是在与开口的表面接触的区域中不含杂质。 因此，该结构在高温操作期间抵抗掺杂剂杂质的扩散，并且可以通过使用减压化学气相沉积或减压外延沉积的选择性沉积来形成。

公开(公告)号：US20110316043A1

公开(公告)日：2011-12-29

申请号：US13062022

申请日：2009-09-16

申请人： John Kouvetakis ,  Jose Menendez

发明人： John Kouvetakis ,  Jose Menendez

IPC分类号： H01L29/12 ,  H01L21/20

CPC分类号： H01L21/02381 ,  H01L21/02433 ,  H01L21/0245 ,  H01L21/02452 ,  H01L21/02532 ,  H01L21/02535 ,  H01L21/02573 ,  H01L21/0262

摘要： Thin group IV semiconductor structures are provided comprising a thin Si substrate and a second region formed directly on the Si substrate, where the second region comprises either (i) a Ge1-xSnx layer; or (ii) a Ge layer having a threading dislocation density of less than about 105/cm2, and the effective bandgap of the second region is less than the effective bandgap of the Si substrate. Further, methods for preparing the thin group IV semiconductor structures are provided. Such structures are useful, for example, as components of solar cells.

摘要翻译： 提供了薄IV族半导体结构，其包括薄Si衬底和直接形成在Si衬底上的第二区域，其中第二区域包括（i）Ge1-xSnx层; 或（ii）穿透位错密度小于约105 / cm2的Ge层，并且第二区域的有效带隙小于Si衬底的有效带隙。 此外，提供了制备薄IV族半导体结构的方法。 这样的结构例如作为太阳能电池的组件是有用的。

公开(公告)号：US20110237052A1

公开(公告)日：2011-09-29

申请号：US13047136

申请日：2011-03-14

申请人： Ichiro MIZUSHIMA ,  Shinji Mori

发明人： Ichiro MIZUSHIMA ,  Shinji Mori

IPC分类号： H01L21/20

CPC分类号： H01L21/02532 ,  H01L21/02535 ,  H01L21/02601 ,  H01L21/02667

摘要： According to an embodiment of the present invention, a method for manufacturing a semiconductor device includes: forming an epitaxial crystal from a seed crystal exposed between first and second structures; heating the epitaxial crystal at a temperature equal to or less than a melting point of the epitaxial crystal to migrate the epitaxial crystal; and migrating the epitaxial crystal to form plural aggregates between the first and second structures.

摘要翻译： 根据本发明的实施例，一种用于制造半导体器件的方法包括：从在第一和第二结构之间暴露的晶种形成外延晶体; 在等于或小于外延晶体的熔点的温度下加热外延晶体以迁移外延晶体; 并且迁移所述外延晶体以在所述第一和第二结构之间形成多个聚集体。

公开(公告)号：US07921805B2

公开(公告)日：2011-04-12

申请号：US12691243

申请日：2010-01-21

申请人： Michael A. Todd ,  Ivo Raaijmakers

发明人： Michael A. Todd ,  Ivo Raaijmakers

IPC分类号： C23C16/00

CPC分类号： H01L21/67253 ,  C23C16/4481 ,  C23C16/4483 ,  C23C16/4486 ,  H01L21/02381 ,  H01L21/02422 ,  H01L21/02529 ,  H01L21/02532 ,  H01L21/02535 ,  H01L21/02573 ,  H01L21/0262 ,  H01L21/67115

摘要： A liquid injector is used to vaporize and inject a silicon precursor into a process chamber to form silicon-containing layers during a semiconductor fabrication process. The injector is connected to a source of silicon precursor, which preferably comprises liquid trisilane in a mixture with one or more dopant precursors. The mixture is metered as a liquid and delivered to the injector, where it is then vaporized and injected into the process chamber.

摘要翻译： 在半导体制造过程中，使用液体注入器将硅前体汽化并注入到处理室中以形成含硅层。 注射器连接到硅前体源，其优选包括与一种或多种掺杂剂前体的混合物中的液体丙硅烷。 将混合物计量为液体并输送到注射器，然后将其蒸发并注入到处理室中。