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公开(公告)号：US20130256838A1
公开(公告)日：2013-10-03
申请号：US13784403
申请日：2013-03-04
IPC分类号： H01L29/161 , H01L21/02
CPC分类号： H01L29/161 , H01L21/02381 , H01L21/0245 , H01L21/02452 , H01L21/0251 , H01L21/02532 , H01L21/02535 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L21/02636 , H01L29/165 , H01L29/7848
摘要： A method for forming germanium tin layers and the resulting embodiments are described. A germanium precursor and a tin precursor are provided to a chamber, and an epitaxial layer of germanium tin is formed on the substrate. The germanium tin layer is selectively deposited on the semiconductor regions of the substrate and can include thickness regions of varying tin and dopant concentrations. The germanium tin layer can be selectively deposited by either alternating or concurrent flow of a halide gas to etch the surface of the substrate.
摘要翻译： 描述形成锗锡层的方法和所得到的实施例。 将锗前体和锡前体提供到室，并且在该衬底上形成锗锡的外延层。 锗锡层选择性地沉积在衬底的半导体区域上，并且可以包括不同锡和掺杂剂浓度的厚度区域。 可以通过卤化物气体的交替或同时流动来选择性地沉积锗锡层，以蚀刻衬底的表面。
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公开(公告)号：US20130288480A1
公开(公告)日：2013-10-31
申请号：US13456500
申请日：2012-04-26
IPC分类号： H01L21/3065 , H01L21/306
CPC分类号： H01L21/02661 , H01L21/0245 , H01L21/02452 , H01L21/02532 , H01L21/02535 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L21/3065
摘要： Methods of preparing a clean surface of germanium tin or silicon germanium tin layers for subsequent deposition are provided. An overlayer of Ge, doped Ge, another GeSn or SiGeSn layer, a doped GeSn or SiGeSn layer, an insulator, or a metal can be deposited on a prepared GeSn or SiGeSn layer by positioning a substrate with an exposed germanium tin or silicon germanium tin layer in a processing chamber, heating the processing chamber and flowing a halide gas into the processing chamber to etch the surface of the substrate using either thermal or plasma assisted etching followed by depositing an overlayer on the substantially oxide free and contaminant free surface. Methods can also include the placement and etching of a sacrificial layer, a thermal clean using rapid thermal annealing, or a process in a plasma of nitrogen trifluoride and ammonia gas.
摘要翻译： 提供了制备用于后续沉积的锗锡或硅锗锡层的洁净表面的方法。 通过用暴露的锗锡或硅锗锡定位衬底，可以在制备的GeSn或SiGeSn层上沉积Ge，掺杂Ge，另一GeSn或SiGeSn层，掺杂GeSn或SiGeSn层，绝缘体或金属的覆盖层 层，加热处理室并使卤化物气体流入处理室，以使用热或等离子体辅助蚀刻来蚀刻衬底的表面，随后在基本上无氧化物和无污染物的表面上沉积覆盖层。 方法还可以包括牺牲层的放置和蚀刻，使用快速热退火的热清洁，或三氟化氮和氨气的等离子体中的工艺。
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公开(公告)号：US20130026540A1
公开(公告)日：2013-01-31
申请号：US13218782
申请日：2011-08-26
CPC分类号： H01L21/0262 , H01L21/02441 , H01L21/02488 , H01L21/02505 , H01L21/02532 , H01L29/1054 , H01L29/165 , H01L29/517 , H01L29/66575 , H01L29/7848
摘要： Methods and apparatus for forming semiconductor structures are disclosed herein. In some embodiments, a semiconductor structure may include a first germanium carbon layer having a first side and an opposing second side; a germanium-containing layer directly contacting the first side of the first germanium carbon layer; and a first silicon layer directly contacting the opposing second side of the first germanium carbon layer. In some embodiments, a method of forming a semiconductor structure may include forming a first germanium carbon layer atop a first silicon layer; and forming a germanium-containing layer atop the first germanium carbon layer.
摘要翻译： 本文公开了用于形成半导体结构的方法和装置。 在一些实施例中，半导体结构可以包括具有第一侧和相对的第二侧的第一锗碳层; 直接接触第一锗碳层的第一侧的含锗层; 以及直接接触第一锗碳层的相对的第二侧的第一硅层。 在一些实施例中，形成半导体结构的方法可包括在第一硅层顶上形成第一锗碳层; 以及在第一锗碳层顶上形成含锗层。
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公开(公告)号：US20110306186A1
公开(公告)日：2011-12-15
申请号：US13156082
申请日：2011-06-08
CPC分类号： H01L21/67115 , H01L21/68742
摘要： Methods for removing residue from interior surfaces of process chambers are provided herein. In some embodiments, a method of conditioning interior surfaces of a process chamber may include maintaining a process chamber at a first pressure and at a first temperature of less than about 800 degrees Celsius; providing a process gas to the process chamber at the first pressure and the first temperature, wherein the process gas comprises chlorine and nitrogen to remove residue disposed on interior surfaces of the process chamber; and increasing the pressure in the process chamber from the first pressure to a second pressure while continuing to provide the process gas to the process chamber.
摘要翻译： 本文提供了从处理室内表面除去残留物的方法。 在一些实施例中，调节处理室的内表面的方法可以包括将处理室保持在小于约800摄氏度的第一压力和第一温度; 在所述第一压力和所述第一温度下向所述处理室提供工艺气体，其中所述工艺气体包括氯和氮以除去设置在所述处理室的内表面上的残留物; 以及将处理室中的压力从第一压力增加到第二压力，同时继续向处理室提供处理气体。
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公开(公告)号：US20110100554A1
公开(公告)日：2011-05-05
申请号：US12876563
申请日：2010-09-07
IPC分类号： H01L21/465
摘要： Embodiments of a parallel system for epitaxial deposition are disclosed herein. In some embodiments, a parallel system for epitaxial deposition includes a first body having a first process chamber and a second process chamber disposed within the first body; a shared gas injection system coupled to each of the first and the second process chambers; and a shared exhaust system coupled to each of the first and second process chambers, the exhaust system having independent control of an exhaust pressure from each chamber. In some embodiments, the gas injection system provides independent control of flow rate of a gas entering each chamber.
摘要翻译： 本文公开了用于外延沉积的并联系统的实施例。 在一些实施例中，用于外延沉积的并联系统包括具有第一处理室和设置在第一主体内的第二处理室的第一主体; 耦合到所述第一和第二处理室中的每一个的共用气体注入系统; 以及联接到所述第一和第二处理室中的每一个的共用排气系统，所述排气系统独立地控制来自每个室的排气压力。 在一些实施例中，气体注入系统提供进入每个室的气体的流速的独立控制。
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公开(公告)号：US20120270384A1
公开(公告)日：2012-10-25
申请号：US13192101
申请日：2011-07-27
申请人： ERROL ANTONIO C. SANCHEZ , RICHARD O. COLLINS , DAVID K. CARLSON , KEVIN BAUTISTA , HERMAN P. DINIZ , KAILASH PATALAY , NYI O. MYO , DENNIS L. DEMARS , CHRISTOPHE MARCADAL , STEVE JUMPER , SATHEESH KUPPURAO
发明人： ERROL ANTONIO C. SANCHEZ , RICHARD O. COLLINS , DAVID K. CARLSON , KEVIN BAUTISTA , HERMAN P. DINIZ , KAILASH PATALAY , NYI O. MYO , DENNIS L. DEMARS , CHRISTOPHE MARCADAL , STEVE JUMPER , SATHEESH KUPPURAO
IPC分类号： H01L21/20 , C23C16/455 , C23C16/46
CPC分类号： C23C16/0236 , C23C16/301 , C23C16/4412 , C23C16/45563 , C23C16/45565 , C23C16/4584 , C23C16/46
摘要： Methods and apparatus for deposition of materials on a substrate are provided herein. In some embodiments, an apparatus for processing a substrate may include a process chamber having a substrate support disposed therein to support a processing surface of a substrate, an injector disposed to a first side of the substrate support and having a first flow path to provide a first process gas and a second flow path to provide a second process gas independent of the first process gas, wherein the injector is positioned to provide the first and second process gases across the processing surface of the substrate, a showerhead disposed above the substrate support to provide the first process gas to the processing surface of the substrate, and an exhaust port disposed to a second side of the substrate support, opposite the injector, to exhaust the first and second process gases from the process chamber.
摘要翻译： 本文提供了在衬底上沉积材料的方法和装置。 在一些实施例中，用于处理衬底的装置可以包括处理室，其具有设置在其中的衬底支撑件，以支撑衬底的处理表面，设置在衬底支撑件的第一侧上的注射器，并且具有第一流动路径， 第一处理气体和第二流动路径以提供独立于第一处理气体的第二处理气体，其中喷射器被定位成提供穿过基板的处理表面的第一和第二处理气体，设置在基板支撑件上方的喷头 将第一工艺气体提供到衬底的处理表面，以及设置在衬底支撑件的与注射器相对的第二侧的排气口，以从处理室排出第一和第二工艺气体。
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公开(公告)号：US20120266984A1
公开(公告)日：2012-10-25
申请号：US13441371
申请日：2012-04-06
IPC分类号： G05D7/00
CPC分类号： G05D7/0641 , Y10T137/4259 , Y10T137/6416 , Y10T137/7043 , Y10T137/8593
摘要： Embodiments of chemical delivery systems disclosed herein may include an enclosure; a first compartment disposed within the enclosure and having a plurality of first conduits to carry a first set of chemical species, the first compartment further having a first draw opening and a first exhaust opening to facilitate flow of a purge gas through the first compartment; and a second compartment disposed within the enclosure and having a plurality of second conduits to carry a second set of chemical species, the second compartment further having a second draw opening and a second exhaust opening to facilitate flow of the purge gas through the second compartment, wherein the first set of chemical species is different than the second set of chemical species, and wherein a draw velocity of the purge gas through the second compartment is higher than the draw velocity of the purge gas through the first compartment.
摘要翻译： 本文公开的化学品递送系统的实施例可以包括外壳; 设置在所述外壳内并具有多个第一导管以承载第一组化学物质的第一隔室，所述第一隔室还具有第一抽吸开口和第一排气口，以促进吹扫气体流过所述第一隔室; 以及设置在所述外壳内并且具有多个第二导管以携带第二组化学物质的第二隔室，所述第二隔室还具有第二牵引开口和第二排气口，以促进所述吹扫气体流过所述第二隔室， 其中所述第一组化学物质不同于所述第二组化学物质，并且其中通过所述第二隔室的吹扫气体的抽吸速度高于通过所述第一隔室的吹扫气体的抽吸速度。
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公开(公告)号：US20120266819A1
公开(公告)日：2012-10-25
申请号：US13441382
申请日：2012-04-06
IPC分类号： C23C16/455 , C23C16/56
CPC分类号： C23C16/54 , C23C16/06 , C23C16/4412 , C23C16/45565 , C23C16/45574 , H01L21/67115 , H01L21/67184 , H01L21/67201 , H01L21/67207
摘要： Apparatus for processing substrates are provided. In some embodiments, a processing system may include a first transfer chamber and a first process chamber coupled to the transfer chamber, the process chamber further comprising a substrate support to support a processing surface of a substrate within the process chamber, an injector disposed to a first side of the substrate support and having a first flow path to provide a first process gas and a second flow path to provide a second process gas independent of the first process gas, wherein the injector provides the first and second process gases across the processing surface of the substrate, a showerhead disposed above the substrate support to provide the first process gas to the processing surface, and an exhaust port disposed to a second side of the substrate support, opposite the injector, to exhaust the first and second process gases from the process chamber.
摘要翻译： 提供了用于处理衬底的设备。 在一些实施例中，处理系统可以包括耦合到传送室的第一传送室和第一处理室，处理室还包括用于支撑处理室内的基板的处理表面的基板支撑件， 所述衬底支撑件的第一侧面具有第一流动路径，以提供第一工艺气体和第二流动路径以提供独立于所述第一工艺气体的第二工艺气体，其中所述喷射器在所述处理表面上提供所述第一和第二工艺气体 基板支撑件上方的喷头，以将第一处理气体提供给处理表面;以及排气口，设置在与喷射器相对的基板支撑件的第二侧上，从而将第一和第二处理气体从 处理室。
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公开(公告)号：US20110174212A1
公开(公告)日：2011-07-21
申请号：US12887647
申请日：2010-09-22
申请人： BALASUBRAMANIAN RAMACHANDRAN , ERROL ANTONIO C. SANCHEZ , NYI O. MYO , KEVIN JOSEPH BAUTISTA , HARPREET SINGH JUNEJA , ZUOMING ZHU
发明人： BALASUBRAMANIAN RAMACHANDRAN , ERROL ANTONIO C. SANCHEZ , NYI O. MYO , KEVIN JOSEPH BAUTISTA , HARPREET SINGH JUNEJA , ZUOMING ZHU
IPC分类号： C30B25/02 , C23C16/455 , C23C16/458 , C23C16/52 , C30B25/16
CPC分类号： C23C16/455 , C23C16/45523 , C30B25/14 , H01L21/02532 , H01L21/02573 , H01L21/0262
摘要： Methods and apparatus for processing a substrate are provided herein. In some embodiments, an apparatus for processing a substrate includes a process chamber having a substrate support disposed therein to support a processing surface of a substrate at a desired position within the process chamber; a first inlet port to provide a first process gas over the processing surface of the substrate in a first direction; a second inlet port to provide a second process gas over the processing surface of the substrate in a second direction different from the first direction, wherein an azimuthal angle measured between the first direction and the second direction with respect to a central axis of the substrate support is up to about 145 degrees; and an exhaust port disposed opposite the first inlet port to exhaust the first and second process gases from the process chamber.
摘要翻译： 本文提供了用于处理衬底的方法和设备。 在一些实施例中，用于处理衬底的设备包括处理室，其具有设置在其中的衬底支撑件，以在处理室内的期望位置处支撑衬底的处理表面; 第一入口端口，用于在第一方向上在衬底的处理表面上提供第一工艺气体; 第二入口端口，用于在不同于第一方向的第二方向上在衬底的处理表面上提供第二工艺气体，其中在第一方向和第二方向之间相对于衬底支撑件的中心轴线测量的方位角 高达约145度; 以及与第一入口相对设置的排气口，以从处理室排出第一和第二处理气体。
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