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公开(公告)号：US20130025538A1
公开(公告)日：2013-01-31
申请号：US13536575
申请日：2012-06-28
CPC分类号： H01L21/68792 , C30B25/12 , H01L21/67115 , H01L21/68735 , H01L21/68742 , H01L21/6875 , H01L21/68785
摘要： Methods and apparatus for processing a substrate are provided herein. In some embodiments, the apparatus may include a ring to support a substrate in a position for processing, wherein the substrate is supported by a top side of the ring proximate a peripheral edge of the substrate such that a backside of the substrate, when present, is disposed over a central opening of the ring, a substantially planar member disposed below the ring, wherein substantially planar member includes plurality of slots, and a plurality of support arms which support the ring and the substantially planar member, wherein each support arm includes a terminal portion that supports the substantially planar member and extends through a respective one of the plurality of slots to support the ring
摘要翻译： 本文提供了用于处理衬底的方法和设备。 在一些实施例中，该装置可以包括用于将衬底支撑在用于处理的位置的环，其中衬底由邻近衬底的周边边缘的环的顶侧支撑，使得衬底的背面（当存在时） 设置在所述环的中心开口上方，设置在所述环下方的基本上平面的构件，其中基本平坦的构件包括多个狭槽，以及支撑所述环和所述基本平坦构件的多个支撑臂，其中每个支撑臂包括 端子部分，其支撑基本平坦的构件并且延伸穿过多个槽中的相应一个以支撑环
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公开(公告)号：US20150059277A1
公开(公告)日：2015-03-05
申请号：US14476947
申请日：2014-09-04
申请人： Richard O. Collins
发明人： Richard O. Collins
CPC分类号： E04D13/1606 , E04B1/803 , E04D3/32 , E04D3/351 , E04D3/357 , Y10T428/231
摘要： An insulating composite panel (ICP) 100, has an initial thermal resistance (R value) greater than about 50 ft2·° F.·h/Btu (8.8 K·m2/W) at a thickness less than 2.0 in (51 mm). The ICP is preassembled with a vacuum insulation panel (VIP) 102 protected by a lower rigid cover board 104 adhered to a lower surface of the VIP by a lower grid of adhesive ribbons 108, and by an upper rigid cover board 106 adhered to an upper surface of the VIP by an upper grid of adhesive ribbons 110. Each of the adhesive grids 108, 110 is augmented by a respective continuous ribbon of adhesive 112, 114 along the entire perimeter of each respective interface between the VIP 102 and each respective cover board 104, 106. The ICP has high resistance to wind uplift, mold, and fire, and low mass per unit area.
摘要翻译： 绝缘复合板（ICP）100在（51mm）厚度小于2.0的情况下具有大于约50ft2·°F·h / Btu（8.8K·m 2 / W）的初始热阻（R值） 。 ICP预先安装有由下部刚性盖板104保护的真空绝热板（VIP）102，该下部刚性盖板104通过粘合带108的下部格栅粘附到VIP的下表面，并且通过粘附到上部的上部刚性盖板106 通过粘合带110的上格栅，VIP的表面。粘合剂网格108,110中的每一个沿着VIP 102和每个相应覆盖板之间的每个相应接口的整个周边的相应连续的粘合剂带112,114增强 104，106. ICP具有较高的抵抗风抬升，模具和火灾，每单位面积质量低的特点。
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3.发明授权Non-contact substrate support position sensing system and corresponding adjustments 有权非接触式基板支撑位置传感系统及相应调整公开(公告)号：US08441640B2
公开(公告)日：2013-05-14
申请号：US12238987
申请日：2008-09-26
CPC分类号： H01L21/68 , C30B25/12 , H01L21/67259 , H01L21/68785 , H01L21/68792
摘要： A substrate processing system includes an optical measurement assembly coupled to an exterior of a processing chamber that has a portion that is transparent. The processing chamber includes a reference object and a pedestal for supporting a work piece. The optical measurement assembly measures a lateral location, a height and a tilt of the pedestal by transmitting light into the processing chamber through the transparent portion of the processing chamber and detecting a reflected light from both the reference object and the portion of the pedestal after the reflected light leaves the chamber through the transparent portion of the processing chamber. A method of adjusting a pedestal includes analyzing the reflected light and leveling the pedestal, translating the pedestal, calibrating the pedestal height to a preheat ring level, and checking the level and location of the pedestal in response to the analyzed reflected light.
摘要翻译： 衬底处理系统包括耦合到具有透明部分的处理室的外部的光学测量组件。 处理室包括用于支撑工件的参考物体和基座。 光学测量组件通过将光通过处理室的透明部分传输到处理室中来测量基座的横向位置，高度和倾斜度，并且检测来自基准物体和底座部分之后的反射光 反射光通过处理室的透明部分离开室。 调整基座的方法包括：分析反射光并调平基座，平移基座，将基座高度校准到预热环电平，以及响应分析的反射光检查基座的电平和位置。
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公开(公告)号：US09297164B2
公开(公告)日：2016-03-29
申请号：US14476947
申请日：2014-09-04
CPC分类号： E04D13/1606 , E04B1/803 , E04D3/32 , E04D3/351 , E04D3/357 , Y10T428/231
摘要： An insulating composite panel (ICP) 100, has an initial thermal resistance (R value) greater than about 50 ft2·° F.·h/Btu (8.8 K·m2/W) at a thickness less than 2.0 in (51 mm). The ICP is preassembled with a vacuum insulation panel (VIP) 102 protected by a lower rigid cover board 104 adhered to a lower surface of the VIP by a lower grid of adhesive ribbons 108, and by an upper rigid cover board 106 adhered to an upper surface of the VIP by an upper grid of adhesive ribbons 110. Each of the adhesive grids 108, 110 is augmented by a respective continuous ribbon of adhesive 112, 114 along the entire perimeter of each respective interface between the VIP 102 and each respective cover board 104, 106. The ICP has high resistance to wind uplift, mold, and fire, and low mass per unit area.
摘要翻译： 绝缘复合板（ICP）100在（51mm）厚度小于2.0的情况下具有大于约50ft2·°F·h / Btu（8.8K·m 2 / W）的初始热阻（R值） 。 ICP预先安装有由下部刚性盖板104保护的真空绝热板（VIP）102，该下部刚性盖板104通过粘合带108的下部格栅粘附到VIP的下表面，并且通过粘附到上部的上部刚性盖板106 通过粘合带110的上格栅，VIP的表面。粘合剂网格108,110中的每一个沿着VIP 102和每个相应覆盖板之间的每个相应接口的整个周边的相应连续的粘合剂带112,114增强 104，106. ICP具有较高的抵抗风抬升，模具和火灾，每单位面积质量低的特点。
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公开(公告)号：US20120270384A1
公开(公告)日：2012-10-25
申请号：US13192101
申请日：2011-07-27
申请人： ERROL ANTONIO C. SANCHEZ , RICHARD O. COLLINS , DAVID K. CARLSON , KEVIN BAUTISTA , HERMAN P. DINIZ , KAILASH PATALAY , NYI O. MYO , DENNIS L. DEMARS , CHRISTOPHE MARCADAL , STEVE JUMPER , SATHEESH KUPPURAO
发明人： ERROL ANTONIO C. SANCHEZ , RICHARD O. COLLINS , DAVID K. CARLSON , KEVIN BAUTISTA , HERMAN P. DINIZ , KAILASH PATALAY , NYI O. MYO , DENNIS L. DEMARS , CHRISTOPHE MARCADAL , STEVE JUMPER , SATHEESH KUPPURAO
IPC分类号： H01L21/20 , C23C16/455 , C23C16/46
CPC分类号： C23C16/0236 , C23C16/301 , C23C16/4412 , C23C16/45563 , C23C16/45565 , C23C16/4584 , C23C16/46
摘要： Methods and apparatus for deposition of materials on a substrate are provided herein. In some embodiments, an apparatus for processing a substrate may include a process chamber having a substrate support disposed therein to support a processing surface of a substrate, an injector disposed to a first side of the substrate support and having a first flow path to provide a first process gas and a second flow path to provide a second process gas independent of the first process gas, wherein the injector is positioned to provide the first and second process gases across the processing surface of the substrate, a showerhead disposed above the substrate support to provide the first process gas to the processing surface of the substrate, and an exhaust port disposed to a second side of the substrate support, opposite the injector, to exhaust the first and second process gases from the process chamber.
摘要翻译： 本文提供了在衬底上沉积材料的方法和装置。 在一些实施例中，用于处理衬底的装置可以包括处理室，其具有设置在其中的衬底支撑件，以支撑衬底的处理表面，设置在衬底支撑件的第一侧上的注射器，并且具有第一流动路径， 第一处理气体和第二流动路径以提供独立于第一处理气体的第二处理气体，其中喷射器被定位成提供穿过基板的处理表面的第一和第二处理气体，设置在基板支撑件上方的喷头 将第一工艺气体提供到衬底的处理表面，以及设置在衬底支撑件的与注射器相对的第二侧的排气口，以从处理室排出第一和第二工艺气体。
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公开(公告)号：US08398777B2
公开(公告)日：2013-03-19
申请号：US12238921
申请日：2008-09-26
IPC分类号： C23C16/00 , C23C16/50 , C23F1/00 , H01L21/306
CPC分类号： H01L21/68 , C30B25/12 , H01L21/67259 , H01L21/68785 , H01L21/68792
摘要： A pedestal positioning assembly system for use in a substrate processing system includes a pedestal rigidly attached to a pedestal shaft, a reference rigidly attached to the substrate processing system, a lateral adjustment assembly to adjust a lateral location of the pedestal relative to the reference, and a vertical adjustment assembly to adjust a tilt of the pedestal relative to the reference. The lateral adjustment assembly and the vertical adjustment assembly are external to a processing chamber and are coupled to the pedestal disposed within the processing chamber through the pedestal shaft. The reference can be a ring and the lateral adjustment assembly substantially centers the pedestal within the ring. A method of adjusting a pedestal includes leveling the pedestal, translating the pedestal, calibrating the pedestal height to a preheat ring level, and checking the level and location of the pedestal while rotating the pedestal.
摘要翻译： 用于基板处理系统的基座定位组件系统包括刚性地连接到基座轴的基座，刚性地附接到基板处理系统的基准，横向调整组件，用于调节基座相对于基准的横向位置，以及 垂直调节组件，用于调节基座相对于基准的倾斜。 横向调节组件和垂直调节组件位于处理室的外部，并且通过基座轴联接到设置在处理室内的基座。 参考可以是环，并且横向调节组件使基座在环内基本上居中。 一种调节基座的方法包括调平基座，平移基座，将基座高度校准到预热环水平面，以及在旋转基座时检查基座的水平和位置。
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7.发明申请CVD REACTOR WITH MULTIPLE PROCESSING LEVELS AND DUAL-AXIS MOTORIZED LIFT MECHANISM 审中-公开具有多种加工水平和双轴电动机构的CVD反应器公开(公告)号：US20100075488A1
公开(公告)日：2010-03-25
申请号：US12560073
申请日：2009-09-15
申请人： Richard O. Collins , Nyi O. Myo , Kevin J. Bautista , John S. Webb , Errol C. Sanchez , Yi-Chiau Huang , Kailash Kiran Patalay , Zhi Yuan Zhou , Wilson Yu
发明人： Richard O. Collins , Nyi O. Myo , Kevin J. Bautista , John S. Webb , Errol C. Sanchez , Yi-Chiau Huang , Kailash Kiran Patalay , Zhi Yuan Zhou , Wilson Yu
IPC分类号： H01L21/20 , C23C16/458
CPC分类号： H01L21/67115 , C23C16/45551 , H01L21/68742 , H01L21/68792
摘要： An apparatus for processing a substrate, comprising a processing chamber and a substrate support and lift pin assembly disposed within the chamber. The substrate support and lift pin assembly are coupled to a lift mechanism that controls positioning of the substrate support and the lift pins and provides rotation for the substrate support. The lift mechanism includes at least one sensor capable of generating a signal when clearance between the substrate support and the lift pins allows rotation of the substrate support to begin. The substrate support capable of concurrent axial motion and rotation may be used in a processing chamber comprising multiple processing zones separated by edge rings. Substrates may be subjected to successive or cyclical processes by moving between the multiple processing zones.
摘要翻译： 一种用于处理衬底的装置，包括处理室和设置在腔室内的衬底支撑件和提升销组件。 基板支撑和提升销组件联接到升降机构，该提升机构控制基板支撑件和升降销的定位并提供用于基板支撑件的旋转。 提升机构包括至少一个传感器，当传感器支架和提升销之间的间隙允许基板支撑件的旋转开始时能产生信号。 能够同时进行轴向运动和旋转的基板支撑件可用于包括由边缘环分开的多个处理区域的处理室。 可以通过在多个处理区之间移动来对衬底进行连续或循环过程。
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8.发明申请NON-CONTACT SUBSTRATE SUPPORT POSITION SENSING SYSTEM AND CORRESPONDING ADJUSTMENTS 有权非接触式基板支撑位置传感系统及相应调整公开(公告)号：US20090276097A1
公开(公告)日：2009-11-05
申请号：US12238987
申请日：2008-09-26
CPC分类号： H01L21/68 , C30B25/12 , H01L21/67259 , H01L21/68785 , H01L21/68792
摘要： A substrate processing system includes an optical measurement assembly coupled to an exterior of a processing chamber that has a portion that is transparent. The processing chamber includes a reference object and a pedestal for supporting a work piece. The optical measurement assembly measures a lateral location, a height and a tilt of the pedestal by transmitting light into the processing chamber through the transparent portion of the processing chamber and detecting a reflected light from both the reference object and the portion of the pedestal after the reflected light leaves the chamber through the transparent portion of the processing chamber. A method of adjusting a pedestal includes analyzing the reflected light and leveling the pedestal, translating the pedestal, calibrating the pedestal height to a preheat ring level, and checking the level and location of the pedestal in response to the analyzed reflected light.
摘要翻译： 衬底处理系统包括耦合到具有透明部分的处理室的外部的光学测量组件。 处理室包括用于支撑工件的参考物体和基座。 光学测量组件通过将光通过处理室的透明部分传输到处理室中来测量基座的横向位置，高度和倾斜度，并且检测来自基准物体和底座部分之后的反射光 反射光通过处理室的透明部分离开室。 调整基座的方法包括：分析反射光并调平基座，平移基座，将基座高度校准到预热环电平，以及响应分析的反射光检查基座的电平和位置。
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公开(公告)号：US20090272719A1
公开(公告)日：2009-11-05
申请号：US12238921
申请日：2008-09-26
CPC分类号： H01L21/68 , C30B25/12 , H01L21/67259 , H01L21/68785 , H01L21/68792
摘要： A pedestal positioning assembly system for use in a substrate processing system includes a pedestal rigidly attached to a pedestal shaft, a reference rigidly attached to the substrate processing system, a lateral adjustment assembly to adjust a lateral location of the pedestal relative to the reference, and a vertical adjustment assembly to adjust a tilt of the pedestal relative to the reference. The lateral adjustment assembly and the vertical adjustment assembly are external to a processing chamber and are coupled to the pedestal disposed within the processing chamber through the pedestal shaft. The reference can be a ring and the lateral adjustment assembly substantially centers the pedestal within the ring. A method of adjusting a pedestal includes leveling the pedestal, translating the pedestal, calibrating the pedestal height to a preheat ring level, and checking the level and location of the pedestal while rotating the pedestal.
摘要翻译： 用于基板处理系统的基座定位组件系统包括刚性地连接到基座轴的基座，刚性地附接到基板处理系统的基准，横向调整组件，用于调节基座相对于基准的横向位置，以及 垂直调节组件，用于调节基座相对于基准的倾斜。 横向调节组件和垂直调节组件位于处理室的外部，并且通过基座轴联接到设置在处理室内的基座。 参考可以是环，并且横向调节组件使基座在环内基本上居中。 一种调节基座的方法包括调平基座，平移基座，将基座高度校准到预热环水平面，以及在旋转基座时检查基座的水平和位置。
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