发明申请
- 专利标题： SEMICONDUCTOR DEVICES UTILIZING PARTIALLY DOPED STRESSOR FILM PORTIONS AND METHODS FOR FORMING THE SAME
- 专利标题（中）： 利用局部压电薄膜薄膜部分的半导体器件及其形成方法
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申请号： US13221160申请日： 2011-08-30
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公开(公告)号： US20130049101A1公开(公告)日： 2013-02-28
- 发明人: Wen Chu HSIAO , Ju Wen HSIAO , Ying Min CHOU , Hsiang Hsiang KO , Ying-Lang WANG
- 申请人： Wen Chu HSIAO , Ju Wen HSIAO , Ying Min CHOU , Hsiang Hsiang KO , Ying-Lang WANG
- 申请人地址： TW Hsin-Chu
- 专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- 当前专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- 当前专利权人地址： TW Hsin-Chu
- 主分类号： H01L29/78
- IPC分类号： H01L29/78 ; H01L21/336
摘要：
A semiconductor structure and method for forming the same provide a high mobility stressor material suitable for use as source/drain regions or other active devices. The structure is formed in a substrate opening and is doped with an impurity such as boron in upper portions but is void of the impurity in regions that contact the surfaces of the opening. The structure is therefore resistant to out-diffusion of the dopant impurity during high temperature operations and may be formed through selective deposition using reduced pressure chemical vapor deposition or reduced pressure epitaxial deposition.
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