RARE-EARTH OXIDE BASED EROSION RESISTANT COATINGS FOR SEMICONDUCTOR APPLICATION
    84.
    发明申请
    RARE-EARTH OXIDE BASED EROSION RESISTANT COATINGS FOR SEMICONDUCTOR APPLICATION 审中-公开
    用于半导体应用的基于稀土氧化物的耐腐蚀涂层

    公开(公告)号:US20150270108A1

    公开(公告)日:2015-09-24

    申请号:US14729950

    申请日:2015-06-03

    IPC分类号: H01J37/32 C23C4/10 C23C4/12

    摘要: An article includes a body that is coated with a ceramic coating. The ceramic coating may include Y2O3 in a range between about 45 mol % to about 99 mol %, ZrO2 in a range between about 1 mol % to about 55 mol %, and Al2O3 in a range between about 1 mol % to about 10 mol %. The ceramic coating may alternatively include Y2O3 in a range between about 45 mol % to about 99 mol % and Al2O3 in a range between about 1 mol % to about 10 mol %. The ceramic coating may alternatively include Y2O3 in a range between about 45 mol % to about 99 mol % and ZrO2 in a range between about 1 mol % to about 55 mol %.

    摘要翻译: 一种制品包括涂有陶瓷涂层的主体。 陶瓷涂层可以包括约45mol%至约99mol%范围内的Y 2 O 3,约1mol%至约55mol%范围内的ZrO 2和约1mol%至约10mol%范围内的Al 2 O 3, 。 陶瓷涂层可以可选地包括在约45mol%至约99mol%范围内的Y 2 O 3和约1mol%至约10mol%范围内的Al 2 O 3。 陶瓷涂层可以包括约45mol%至约99mol%范围内的Y 2 O 3和约1mol%至约55mol%范围内的ZrO 2。

    COATING ARCHITECTURE FOR PLASMA SPRAYED CHAMBER COMPONENTS
    85.
    发明申请
    COATING ARCHITECTURE FOR PLASMA SPRAYED CHAMBER COMPONENTS 审中-公开
    等离子体喷雾组件的涂层结构

    公开(公告)号:US20150079370A1

    公开(公告)日:2015-03-19

    申请号:US14462057

    申请日:2014-08-18

    IPC分类号: C23C4/12 C23C4/10

    摘要: A method of plasma spraying an article comprises inserting the article into a vacuum chamber for a low pressure plasma spraying system. A low pressure plasma spray process is then performed by the low pressure plasma spraying system to form a first plasma resistant layer having a thickness of 20-500 microns and a porosity of over 1%. A plasma spray thin film, plasma spray chemical vapor deposition or plasma spray physical vapor deposition process is then performed by the low pressure plasma spraying system to deposit a second plasma resistant layer on the first plasma resistant layer, the second plasma resistant layer having a thickness of less than 50 microns and a porosity of less than 1%.

    摘要翻译: 等离子体喷涂物品的方法包括将物品插入用于低压等离子喷涂系统的真空室中。 然后通过低压等离子体喷涂系统进行低压等离子体喷涂工艺,以形成厚度为20-500微米,孔隙率超过1%的第一耐等离子体层。 然后通过低压等离子体喷涂系统进行等离子体喷涂薄膜,等离子体喷涂化学气相沉积或等离子体喷涂物理气相沉积工艺,以在第一耐等离子体层上沉积第二等离子体层,第二耐等离子体层具有厚度 小于50微米,孔隙率小于1%。