Abstract:
A modular Atomic Force Microscope that allows ultra-high resolution imaging and measurements in a wide variety of environmental conditions is described. The instrument permits such imaging and measurements in environments ranging from ambient to liquid or gas or extremely high or extremely low temperatures.
Abstract:
An apparatus and method of analysis including at least one microscope means operable to characterize the surface of a sample in use, at least a first conduit to convey one or more solvents to the sample and a further conduit to convey at least part of the solution from the sample. At least one pump means delivers solvent to the sample and/or removes solution from the same.
Abstract:
A method for atom probe tomography (APT) sample preparation from a three-dimensional (3D) field effect transistor device formed within a semiconductor structure is provided. The method may include measuring a capacitance-voltage (C-V) characteristic for the 3D field effect transistor device and identifying, based on the measured capacitance-voltage (C-V) characteristic, a Fin structure corresponding to the 3D field effect transistor device. The identified Fin structure is detached from the 3D field effect transistor device using a nanomanipulator probe tip. The detached Fin is then welded to the nanomanipulator probe tip using an incident focused ion beam having a voltage of less than about 1000 eV. The incident focused ion beam having a voltage of less than about 1000 eV is applied to a tip of the Fin that is welded to the nanomanipulator probe tip.
Abstract:
A method for coupling high-frequency energy, in particular for microwave circuits, to a nanoscale junction involves placing a bias-T outside of the tip and sample circuits of a scanning probe microscope and connecting a portion of a sample of analyzed semi-conductor through an outer shielding layer of coaxial cable so as to complete a circuit with minimal involvement of the sample. The bias-T branches into high and low-frequency circuits, both of which are completed and, at least the high-frequency circuit, does not rely on grounding of implements or other structure to accomplish said completion.
Abstract:
A mounting system for samples and instruments for use with a measuring device such as a surface forces apparatus has a housing and a sample mount assembly positioned within the housing. The sample mount assembly has a pivot arm having a first edge and a flexing section. A spring has a first end coupled to the pivot arm. A first sample holder is coupled to the second end of the spring. A second sample holder is positioned in proximity to the first sample holder.
Abstract:
A semi-automated method for atomic force microscopy (“AFM”) scanning of a sample is disclosed. The method can include manually teaching a sample and AFM tip relative location on an AFM tool; then scanning, via a predefined program, on the same sample or other sample with same pattern to produce more images automatically.
Abstract:
The invention relates to a device and a method for the micromechanical positioning and handling of an object. The aim of the invention is to provide a device and an associated method for the micromechanical positioning and handling of objects by means of which the scanning speed can be increased and the positional accuracy be improved so that real time images or video rate images (ca. 25 images per second) having a lateral and vertical resolution in the nanometer range can be achieved. According to the invention, a monolithic component, preferably made of silicon, comprises a support element, an object carrier, a plurality of guide elements and elements for transmitting the movement, the preferably piezoresistive drive elements and the preferably piezoresistive position detectors being integrated into said monolithic component; Said micromechanical positioning device can be used, for example, in scanning probe microscopy and in nanopositioning and nanomanipulation technology.
Abstract:
There is provided a sample manipulating apparatus which is an apparatus for manipulating a sample mounted on a substrate surface, in which at least position data and shape data are acquired by observing the sample. Thereafter, tweezers are positioned by moving means such that the sample is positioned between an observing probe and a grasping probe based on the two set of data. After positioning, a height of the tweezers is set to a position of being remote from the substrate surface by a constant distance by moving means while monitoring a result of measurement by displacement measuring means. Thereafter, the grasping probe is moved to a side of the observing probe while monitoring the result of measurement by the displacement measuring means at the set height and the sample is grasped while detecting a grasping start point.
Abstract:
A nanotweezer (1) according to the present invention includes: a supporting member (25); an observation probe (10) that projects out from the supporting member (25), and is used when observing a surface of a specimen; a movable arm (20) that is arranged next to the observation probe (10) projecting out from the supporting member (25), and makes closed or opened between the observation probe (10) and the movable arm (20) to hold or release the specimen held between the observation probe (10) and the movable arm (20); and a drive mechanism that drives the movable arm (20) so as to make closed or opened between the observation probe (10) and the movable arm (20), and the supporting member (25), the observation probe (10) and the movable arm (20) are each formed by processing a semiconductor wafer (30) through a photolithography process.
Abstract:
An electron beam (area beam) having a fixed area is irradiated onto the surface of a semiconductor sample, and reflected electrons from the sample surface are imaged by the imaging lens, and images of a plurality of regions of the surface of the semiconductor sample are obtained and stored in the image storage unit, and the stored images of the plurality of regions are compared with each other, and the existence of a defect in the regions and the defect position are measured. By doing this, in an apparatus for testing a pattern defect of the same design, foreign substances, and residuals on a wafer in the manufacturing process of a semiconductor apparatus by an electron beam, speeding-up of the test can be realized.