公开(公告)号：US20080290479A1

公开(公告)日：2008-11-27

申请号：US12153705

申请日：2008-05-22

Applicant: Ju Pyo Hong ,  Seog Moon Choi ,  Tae Hoon Kim ,  Job Ha ,  Seung Wook Park

Inventor： Ju Pyo Hong ,  Seog Moon Choi ,  Tae Hoon Kim ,  Job Ha ,  Seung Wook Park

IPC: H01L23/495 ,  H01L21/60

CPC classification number: H01L21/50 ,  B81B2207/093 ,  B81C1/00301 ,  B81C2203/0118 ,  B81C2203/019 ,  H01L23/10 ,  H01L23/3114 ,  H01L2924/0002 ,  H01L2924/16195 ,  H01L2924/16235 ,  H03H9/1057 ,  H03H9/1071 ,  H01L2924/00

Abstract: Provided are wafer level package with a sealing line that seals a device and includes electroconductive patterns as an electrical connection structure for the device, and a method of packaging the same. In the wafer level package, a device substrate includes a device region, where a device is mounted, on the top surface. A sealing line includes a plurality of non-electroconductive patterns and a plurality of electroconductive patterns, and seals the device region. A cap substrate includes a plurality of vias respectively connected to the electroconductive patterns and is attached to the device substrate by the sealing line. Therefore, a simplified wafer level package structure that accomplishes electric connection through electroconductive patterns of a sealing line can be formed without providing an electrode pad for electric connection with a device.

Abstract translation: 提供了具有密封设备并且包括作为设备的电连接结构的导电图案的密封线的晶片级封装以及其封装方法。 在晶片级封装中，器件衬底包括在顶表面上安装器件的器件区域。 密封线包括多个非导电图案和多个导电图案，并且密封该装置区域。 盖基板包括分别连接到导电图案的多个通孔，并通过密封线附接到器件基板。 因此，可以形成通过密封线的导电图案实现电连接的简化的晶片级封装结构，而不需要提供用于与器件电连接的电极焊盘。

公开(公告)号：US20070222056A1

公开(公告)日：2007-09-27

申请号：US11578854

申请日：2005-04-21

Applicant: Christian Bauer ,  Hans Krueger ,  Alois Stelzl

Inventor： Christian Bauer ,  Hans Krueger ,  Alois Stelzl

IPC: H01L23/12 ,  H01L21/00

CPC classification number: H01L21/44 ,  B81C1/0023 ,  H01L2224/16225 ,  H03H3/0072 ,  H03H9/1057

Abstract: A micro-electro-mechanical systems (MEMS) component includes a panel, a chip having an underside containing active component structures, where the chip is mounted on the panel via bumps, a frame structure on the panel and enclosing an installation site of the chip, and a jet-printed structure closing a seam between frame structure and chip. The jet-printed structure has an upper edge that is above a lower edge of the chip.

Abstract translation: 微电子机械系统（MEMS）部件包括面板，具有包含有源部件结构的底部的芯片，其中芯片通过凸块安装在面板上，框架结构在面板上并且包围芯片的安装位置 以及在框架结构和芯片之间封闭接缝的喷墨印刷结构。 喷墨印刷结构具有在芯片的下边缘上方的上边缘。

公开(公告)号：US07144745B2

公开(公告)日：2006-12-05

申请号：US09922770

申请日：2001-08-07

Applicant: Avner Pierre Badehi

Inventor： Avner Pierre Badehi

IPC: H01L21/00 ,  H01L21/44

CPC classification number: B81B7/0077 ,  B81B7/0067 ,  B81B7/007 ,  B81B2207/097 ,  B81C1/00301 ,  B81C2203/0118 ,  B81C2203/032 ,  H01L21/50 ,  H01L23/10 ,  H01L27/14618 ,  H01L27/14683 ,  H01L2224/13 ,  H01L2924/01079 ,  H01L2924/16235 ,  H03H9/105 ,  H03H9/1057 ,  H03H9/1092

Abstract: A method of producing a crystalline substrate based device includes forming a microstructure on a crystalline substrate. At least one packaging layer is sealed over the microstructure by an adhesive and defines therewith at least one gap between the crystalline substrate and the at least one packaging layer.

Abstract translation: 制造基于结晶基板的器件的方法包括在晶体衬底上形成微观结构。 至少一个包装层通过粘合剂密封在微结构上，并且与晶体衬底和至少一个包装层之间限定至少一个间隙。

公开(公告)号：US20060211169A1

公开(公告)日：2006-09-21

申请号：US11322842

申请日：2005-12-30

Applicant: Ijaz Jafri ,  Galen Magendanz

Inventor： Ijaz Jafri ,  Galen Magendanz

IPC: H01L21/00

CPC classification number: B81C1/00333 ,  B81B2201/0271 ,  B81C1/00142 ,  B81C2201/019 ,  B81C2203/036 ,  B81C2203/051 ,  H03H3/0072 ,  H03H9/1057 ,  H03H9/2405 ,  H03H9/2447 ,  H03H9/462 ,  H03H2009/02511

Abstract: A method for forming a vibrating micromechanical structure having a single crystal silicon (SCS) micromechanical resonator formed using a two-wafer process, including either a Silicon-on-insulator (SOI) or insulating base and resonator wafers, wherein resonator anchors, capacitive air gap, isolation trenches, and alignment marks are micromachined in an active layer of the base wafer; the active layer of the resonator wafer is bonded directly to the active layer of the base wafer; the handle and dielectric layers of the resonator wafer are removed; windows are opened in the active layer of the resonator wafer; masking the active layer of the resonator wafer with photoresist; a SCS resonator is machined in the active layer of the resonator wafer using silicon dry etch micromachining technology; and the photoresist is subsequently dry stripped. A patterned SCS cover is bonded to the resonator wafer resulting in hermetically sealed chip scale wafer level vacuum packaged devices.

Abstract translation: 一种用于形成具有使用双晶片工艺形成的单晶硅（SCS）微机械谐振器的振动微机械结构的方法，其包括绝缘体上硅（SOI）或绝缘基底和谐振器晶片，其中谐振器锚，电容空气 间隙，隔离沟槽和对准标记被微加工在基底晶片的有源层中; 谐振器晶片的有源层直接接合到基底晶片的有源层; 去除谐振器晶片的手柄和电介质层; 窗口在谐振器晶片的有源层中打开; 用光致抗蚀剂掩蔽谐振器晶片的有源层; 使用硅干蚀刻微加工技术在谐振器晶片的有源层中加工SCS谐振器; 随后将光致抗蚀剂干燥剥离。 图案化的SCS覆盖层结合到谐振器晶片，从而形成密封的芯片级晶片级真空封装器件。

公开(公告)号：US20050214974A1

公开(公告)日：2005-09-29

申请号：US11089921

申请日：2005-03-24

Applicant: Dean Field ,  Charles Stone ,  Michael Bruner

Inventor： Dean Field ,  Charles Stone ,  Michael Bruner

IPC: H01L21/425 ,  H01L21/50 ,  H03H3/007 ,  H03H3/08 ,  H03H9/00 ,  H03H9/05 ,  H03H9/10 ,  H03H9/64

CPC classification number: H03H9/0547 ,  H03H3/0073 ,  H03H3/08 ,  H03H9/0085 ,  H03H9/1057 ,  H03H9/1064 ,  H03H9/1092 ,  H03H9/14588

Abstract: An integrated circuit is provided which includes one or more device elements formed above a base substrate, a structure forming a sealed cavity above at least a portion of the one or more device elements, and one or more conductive devices formed above the sealed cavity. A method for fabrication of such an integrated circuit is also provided. An exemplary embodiment of the integrated circuit includes a surface acoustic wave device having a plurality of tracks each with a first interdigitated transducer configured to convert a receiving electric field energy into mechanical wave energy and a second interdigitated transducer configured to convert the mechanical wave energy into an output electric field energy. The SAW device also includes a conductor arranged above and spanning across at least two tracks of the plurality of tracks and coupled to the first interdigitated transducers of at least the two tracks.

Abstract translation: 提供一种集成电路，其包括形成在基底基板上方的一个或多个器件元件，在所述一个或多个器件元件的至少一部分上形成密封空腔的结构，以及形成在密封空腔上方的一个或多个导电器件。 还提供了这种集成电路的制造方法。 集成电路的示例性实施例包括具有多个轨道的表面声波装置，每个轨道具有构造成将接收电场能量转换为机械波能的第一交叉换能器，以及配置成将机械波能量转换为 输出电场能量。 SAW器件还包括布置在多个轨道中的至少两个轨道上方并跨越至少两条轨道的第一交叉换能器的导体。

公开(公告)号：US20050082653A1

公开(公告)日：2005-04-21

申请号：US10948976

申请日：2004-09-24

Applicant: Bruce McWilliams ,  Giles Humpston ,  Belgacem Haba ,  David Tuckerman

Inventor： Bruce McWilliams ,  Giles Humpston ,  Belgacem Haba ,  David Tuckerman

IPC: H01L21/60 ,  H01L23/04 ,  H01L23/10 ,  H01L23/485 ,  H01L27/146 ,  H03H3/007 ,  H03H3/08 ,  H03H9/10 ,  H01L23/02

CPC classification number: H01L23/3114 ,  B81B2207/095 ,  B81C1/00293 ,  B81C1/00301 ,  B81C2203/0118 ,  B81C2203/0145 ,  B81C2203/019 ,  H01L21/76898 ,  H01L23/04 ,  H01L24/11 ,  H01L24/13 ,  H01L24/48 ,  H01L27/14618 ,  H01L27/14627 ,  H01L27/14636 ,  H01L33/62 ,  H01L2224/0401 ,  H01L2224/05624 ,  H01L2224/05644 ,  H01L2224/11 ,  H01L2224/11334 ,  H01L2224/13 ,  H01L2224/13099 ,  H01L2224/131 ,  H01L2224/13124 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13169 ,  H01L2224/1401 ,  H01L2224/16 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48228 ,  H01L2224/4824 ,  H01L2224/48247 ,  H01L2224/484 ,  H01L2224/81801 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01018 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01058 ,  H01L2924/01061 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/07811 ,  H01L2924/09701 ,  H01L2924/10253 ,  H01L2924/12042 ,  H01L2924/12044 ,  H01L2924/14 ,  H01L2924/1461 ,  H01L2924/15153 ,  H01L2924/15165 ,  H01L2924/15311 ,  H01L2924/15787 ,  H01L2924/16151 ,  H01L2924/16195 ,  H01L2924/16235 ,  H01L2924/3011 ,  H01L2924/3025 ,  H03H3/007 ,  H03H9/0547 ,  H03H9/0585 ,  H03H9/059 ,  H03H9/1057 ,  H03H9/1064 ,  H03H9/1071 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45099

Abstract: A method of making a plurality of sealed assemblies is provided which includes a) assembling a first element to a second element so that a bottom surface of the first element faces downwardly toward a front surface of the second element and a top surface of the first element faces upwardly away from the second element; and (b) forming ring seals surrounding regions of the front surface of the second element by introducing flowable material between the first element and the second element from the top surface of the first element through openings in the first element. A chip is provided which includes: (a) a body defining a front surface and one or more circuit elements on or within the body; (b) one or more bond pads exposed at the front surface in a bond pad region; and (c) a metallic ring exposed at the front surface, the ring substantially surrounding the bond pad region. Sealed chip assemblies are formed by sealing an array of the chips, e.g., in wafer form, to a cap element.

Abstract translation: 提供了一种制造多个密封组件的方法，其包括：a）将第一元件组装到第二元件，使得第一元件的底表面向下朝向第二元件的前表面并且第一元件的顶表面 面向上远离第二元件; 以及（b）通过从第一元件的顶表面通过第一元件中的开口引入第一元件和第二元件之间的可流动材料，形成围绕第二元件的前表面的区域的环形密封件。 提供了一种芯片，其包括：（a）主体，其在身体上或体内限定前表面和一个或多个电路元件; （b）在接合焊盘区域中的前表面处暴露的一个或多个接合焊盘; 和（c）在前表面露出的金属环，所述环基本上围绕所述接合焊盘区域。 密封的芯片组件通过将芯片的阵列（例如，晶片形式）密封到盖元件来形成。

公开(公告)号：US06808954B2

公开(公告)日：2004-10-26

申请号：US09949368

申请日：2001-09-07

Applicant: Qing Ma ,  Peng Cheng ,  Valluri Rao

Inventor： Qing Ma ,  Peng Cheng ,  Valluri Rao

IPC: H01L2100

CPC classification number: B81B7/0077 ,  H03H3/0072 ,  H03H9/1057 ,  H03H9/2405 ,  H03H9/2431 ,  H03H9/2457 ,  H03H9/2463 ,  H03H2009/02503 ,  H03H2009/02511

Abstract: A microelectromechanical (MEMS) resonator with a vacuum-cavity is fabricated using polysilicon-enabled release methods. A vacuum-cavity surrounding the MEMS beam is formed by removing release material that surrounds the beam and sealing the resulting cavity under vacuum by depositing a layer of nitride over the structure. The vacuum-cavity MEMS resonators have cantilever beams, bridge beams or breathing-bar beams.

Abstract translation: 具有真空腔的微机电（MEMS）谐振器是使用多晶硅启用释放方法制造的。 围绕MEMS光束的真空腔通过去除围绕光束的释放材料并通过在结构上沉积氮化层而在真空下密封所得空腔来形成。 真空腔MEMS谐振器具有悬臂梁，桥梁或呼吸杆梁。

公开(公告)号：US20030048520A1

公开(公告)日：2003-03-13

申请号：US09949368

申请日：2001-09-07

Applicant: Intel Corporation

Inventor： Qing Ma ,  Peng Cheng ,  Valluri Rao

IPC: G02B026/00 ,  H03H009/00

CPC classification number: B81B7/0077 ,  H03H3/0072 ,  H03H9/1057 ,  H03H9/2405 ,  H03H9/2431 ,  H03H9/2457 ,  H03H9/2463 ,  H03H2009/02503 ,  H03H2009/02511

Abstract: A microelectromechanical (MEMS) resonator with a vacuum-cavity is fabricated using polysilicon-enabled release methods. A vacuum-cavity surrounding the MEMS beam is formed by removing release material that surrounds the beam and sealing the resulting cavity under vacuum by depositing a layer of nitride over the structure. The vacuum-cavity MEMS resonators have cantilever beams, bridge beams or breathing-bar beams.

Abstract translation: 具有真空腔的微机电（MEMS）谐振器是使用多晶硅启用释放方法制造的。 围绕MEMS光束的真空腔通过去除围绕光束的释放材料并通过在结构上沉积氮化层而在真空下密封所得空腔来形成。 真空腔MEMS谐振器具有悬臂梁，桥梁或呼吸杆梁。

公开(公告)号：US6436853B2

公开(公告)日：2002-08-20

申请号：US79445501

申请日：2001-02-27

Applicant: UNIV MICHIGAN

Inventor： LIN LIWEI ,  CHENG YU-TING ,  NAJAFI KHALIL ,  WISE KENSALL D

IPC: B81B7/00 ,  B81C1/00 ,  H03H3/007 ,  H03H9/10 ,  H01L21/00 ,  H01L23/20

CPC classification number: H03H9/1057 ,  B81C1/00269 ,  B81C2203/0181 ,  G01P2015/0828 ,  H01L2924/16235 ,  H03H3/0072

Abstract: A method for making a microstructure assembly, the method including the steps of providing a first substrate and a second substrate; depositing an electrically conductive material on the second substrate; contacting the second substrate carrying the electrically conductive material with the first substrate; and then supplying current to the electrically conductive material to locally elevate the temperature of said electrically conductive material and cause formation of a bond between the first substrate and the second substrate.

Abstract translation: 一种制造微结构组件的方法，所述方法包括提供第一基板和第二基板的步骤; 在第二基板上沉积导电材料; 使承载导电材料的第二基板与第一基板接触; 然后向导电材料提供电流以局部地升高所述导电材料的温度，并引起在第一衬底和第二衬底之间形成结合。

公开(公告)号：US06297072B1

公开(公告)日：2001-10-02

申请号：US09293750

申请日：1999-04-16

Applicant: Hendrikus A. C. Tilmans ,  Eric Beyne ,  Myriam Van de Peer

Inventor： Hendrikus A. C. Tilmans ,  Eric Beyne ,  Myriam Van de Peer

IPC: H01L2144

CPC classification number: B81C1/00293 ,  B81B7/0077 ,  G01J5/045 ,  G01L9/0042 ,  G01L9/0073 ,  G01P15/0802 ,  G01P15/125 ,  H01H1/0036 ,  H01H35/14 ,  H01L21/50 ,  H01L23/10 ,  H01L2224/16 ,  H01L2924/01025 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01322 ,  H01L2924/01327 ,  H03H9/1057 ,  H01L2924/00

Abstract: A method of fabricating a microstructure having an inside cavity. The method includes depositing a first layer or a first stack of layers in a substantially closed geometric configuration on a first substrate. Then, performing an indent on the first layer or on the top layer of said first stack of layers. Then, depositing a second layer or a second stack of layers substantially with said substantially closed geometric configuration on a second substrate. Then, aligning and bonding said first substrate on said second substrate such that a microstructure having a cavity is formed according to said closed geometry configuration.

Abstract translation: 一种制造具有内腔的微结构的方法。 该方法包括在第一基底上沉积基本封闭的几何构型的第一层或第一层叠层。 然后，在所述第一层叠层的第一层或顶层上执行缩进。 然后，将基本上具有所述基本上封闭的几何构型的第二层或第二层叠层沉积在第二衬底上。 然后，将所述第一基板对准并粘结在所述第二基板上，使得根据所述封闭几何结构形成具有空腔的微结构。