公开(公告)号：US11769694B2

公开(公告)日：2023-09-26

申请号：US17869462

申请日：2022-07-20

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chung-Chiang Wu ,  Hsueh Wen Tsau ,  Chia-Ching Lee ,  Cheng-Lung Hung ,  Ching-Hwanq Su

IPC: H01L21/768 ,  H01L29/66 ,  H01L23/532 ,  H01L29/78 ,  H01L23/535

CPC classification number: H01L21/76871 ,  H01L21/7684 ,  H01L21/76805 ,  H01L21/76843 ,  H01L21/76862 ,  H01L21/76889 ,  H01L21/76895 ,  H01L23/535 ,  H01L23/53266 ,  H01L29/66795 ,  H01L29/7851

Abstract: A method includes forming an opening in a dielectric layer, depositing a seed layer in the opening, wherein first portions of the seed layer have a first concentration of impurities, exposing the first portions of the seed layer to a plasma, wherein after exposure to the plasma the first portions have a second concentration of impurities that is less than the first concentration of impurities, and filling the opening with a conductive material to form a conductive feature. In an embodiment, the seed layer includes tungsten, and the conductive material includes tungsten. In an embodiment, the impurities include boron.

公开(公告)号：US20230282725A1

公开(公告)日：2023-09-07

申请号：US18316419

申请日：2023-05-12

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Hsin-Yi Lee ,  Cheng-Lung Hung ,  Chi On Chui

IPC: H01L29/49 ,  H01L29/66 ,  H01L29/06 ,  H01L29/423 ,  H01L29/45 ,  H01L29/786 ,  H01L21/02 ,  H01L21/28 ,  H01L21/285 ,  H01L21/8238 ,  H01L27/092

CPC classification number: H01L29/4908 ,  H01L29/66742 ,  H01L29/0673 ,  H01L29/42392 ,  H01L29/45 ,  H01L29/78696 ,  H01L21/02603 ,  H01L21/28088 ,  H01L21/28518 ,  H01L21/823807 ,  H01L21/823814 ,  H01L21/823842 ,  H01L21/823864 ,  H01L21/823871 ,  H01L29/66545 ,  H01L29/66553 ,  H01L27/092

Abstract: In an embodiment, a device includes: a first channel region; a second channel region; and a gate structure around the first channel region and the second channel region, the gate structure including: a gate dielectric layer; a first p-type work function metal on the gate dielectric layer, the first p-type work function metal including fluorine and aluminum; a second p-type work function metal on the first p-type work function metal, the second p-type work function metal having a lower concentration of fluorine and a lower concentration of aluminum than the first p-type work function metal; and a fill layer on the second p-type work function metal.

公开(公告)号：US11637180B2

公开(公告)日：2023-04-25

申请号：US17224555

申请日：2021-04-07

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Hsin-Yi Lee ,  Cheng-Lung Hung ,  Chi On Chui

IPC: H01L29/06 ,  H01L27/092 ,  H01L29/66 ,  H01L29/78

Abstract: In an embodiment, a device includes: a channel region; a gate dielectric layer on the channel region; a first work function tuning layer on the gate dielectric layer, the first work function tuning layer including a p-type work function metal; a barrier layer on the first work function tuning layer; a second work function tuning layer on the barrier layer, the second work function tuning layer including a n-type work function metal, the n-type work function metal different from the p-type work function metal; and a fill layer on the second work function tuning layer.

公开(公告)号：US20230115763A1

公开(公告)日：2023-04-13

申请号：US18079171

申请日：2022-12-12

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Hsin-Yi Lee ,  Cheng-Lung Hung ,  Chi On Chui

IPC: H01L29/40 ,  H01L21/8238 ,  H01L29/49 ,  H01L29/66 ,  H01L29/78 ,  H01L27/092

Abstract: A method includes depositing a first work function tuning layer over a gate dielectric layer using an atomic layer deposition process. The atomic layer deposition process comprises depositing one or more first nitride monolayers; and depositing one or more carbide monolayers over the one or more first nitride monolayers. The method further includes depositing an adhesion layer of the first work function tuning layer; and depositing a conductive material over the adhesion layer.

公开(公告)号：US20220392998A1

公开(公告)日：2022-12-08

申请号：US17388263

申请日：2021-07-29

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Hsin-Yi Lee ,  Cheng-Lung Hung ,  Chi On Chui

IPC: H01L29/06 ,  H01L29/08 ,  H01L29/10 ,  H01L29/66 ,  H01L29/78 ,  H01L27/088

Abstract: A semiconductor device includes nanosheets between the source/drain regions, and a gate structure over the substrate and between the source/drain regions, the gate structure including a gate dielectric material around each of the nanosheets, a work function material around the gate dielectric material, a first capping material around the work function material, a second capping material around the first capping material, wherein the second capping material is thicker at a first location between the nanosheets than at a second location along a sidewall of the nanosheets, and a gate fill material over the second capping material.

公开(公告)号：US11508826B2

公开(公告)日：2022-11-22

申请号：US16952503

申请日：2020-11-19

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Hsin-Yi Lee ,  Cheng-Lung Hung ,  Chi On Chui

IPC: H01L29/49 ,  H01L21/285 ,  H01L21/8234 ,  H01L29/40 ,  H01L29/78

Abstract: A method includes forming a gate dielectric layer on a semiconductor region, and depositing a first aluminum-containing work function layer using a first aluminum-containing precursor. The first aluminum-containing work function layer is over the gate dielectric layer. A second aluminum-containing work function layer is deposited using a second aluminum-containing precursor, which is different from the first aluminum-containing precursor. The second aluminum-containing work function layer is deposited over the first aluminum-containing work function layer. A conductive region is formed over the second aluminum-containing work function layer.

公开(公告)号：US11502080B2

公开(公告)日：2022-11-15

申请号：US17120921

申请日：2020-12-14

Applicant: Taiwan Semiconductor Manufacturing Co. Ltd.

Inventor： Cheng-Yen Tsai ,  Ming-Chi Huang ,  Zoe Chen ,  Wei-Chin Lee ,  Cheng-Lung Hung ,  Da-Yuan Lee ,  Weng Chang ,  Ching-Hwanq Su

IPC: H01L27/092 ,  H01L29/66 ,  H01L29/51 ,  H01L29/78 ,  H01L29/08 ,  H01L29/10 ,  H01L29/49 ,  H01L21/324 ,  H01L21/768 ,  H01L21/28 ,  H01L21/8238 ,  H01L21/02 ,  H01L21/321 ,  H01L21/027

Abstract: In an embodiment, a method includes: forming a gate dielectric layer on an interface layer; forming a doping layer on the gate dielectric layer, the doping layer including a dipole-inducing element; annealing the doping layer to drive the dipole-inducing element through the gate dielectric layer to a first side of the gate dielectric layer adjacent the interface layer; removing the doping layer; forming a sacrificial layer on the gate dielectric layer, a material of the sacrificial layer reacting with residual dipole-inducing elements at a second side of the gate dielectric layer adjacent the sacrificial layer; removing the sacrificial layer; forming a capping layer on the gate dielectric layer; and forming a gate electrode layer on the capping layer.

公开(公告)号：US20220293731A1

公开(公告)日：2022-09-15

申请号：US17317519

申请日：2021-05-11

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Hsin-Yi Lee ,  Cheng-Lung Hung ,  Chi On Chui

IPC: H01L29/06 ,  H01L27/092

Abstract: An embodiment includes a device having nanostructures on a substrate, the nanostructures including a channel region. The device also includes a gate dielectric layer wrapping around each of the nanostructures. The device also includes a first work function tuning layer on the gate dielectric layer, the first work function tuning layer including a first n-type work function metal, aluminum, and carbon, the first n-type work function metal having a work function value less than titanium. The device also includes a glue layer on the first work function tuning layer. The device also includes and a fill layer on the glue layer.

公开(公告)号：US11437474B2

公开(公告)日：2022-09-06

申请号：US17084357

申请日：2020-10-29

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Hsin-Yi Lee ,  Cheng-Lung Hung ,  Chi On Chui

IPC: H01L29/40 ,  H01L29/51 ,  H01L29/06 ,  H01L29/423 ,  H01L29/49 ,  H01L21/28 ,  H01L29/786 ,  H01L29/66 ,  H01L21/8238 ,  H01L27/092

Abstract: A device includes a first nanostructure; a second nanostructure over the first nanostructure; a first high-k gate dielectric around the first nanostructure; a second high-k gate dielectric around the second nanostructure; and a gate electrode over the first and second high-k gate dielectrics. The gate electrode includes a first work function metal; a second work function metal over the first work function metal; and a first metal residue at an interface between the first work function metal and the second work function metal, wherein the first metal residue has a metal element that is different than a metal element of the first work function metal.

公开(公告)号：US20220238681A1

公开(公告)日：2022-07-28

申请号：US17717382

申请日：2022-04-11

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Hsin-Yi Lee ,  Ji-Cheng Chen ,  Cheng-Lung Hung ,  Chi On Chui

IPC: H01L29/423 ,  H01L29/78 ,  H01L29/66 ,  H01L29/40

Abstract: A device includes a first nanostructure; a second nanostructure over the first nanostructure; a first high-k gate dielectric disposed around the first nanostructure; a second high-k gate dielectric being disposed around the second nanostructure; and a gate electrode over the first high-k gate dielectric and the second high-k gate dielectric. A portion of the gate electrode between the first nanostructure and the second nanostructure comprises a first portion of a p-type work function metal filling an area between the first high-k gate dielectric and the second high-k gate dielectric.