MULTI-COLUMN LARGE FIELD OF VIEW IMAGING PLATFORM

    公开(公告)号:US20250093786A1

    公开(公告)日:2025-03-20

    申请号:US18368795

    申请日:2023-09-15

    Abstract: A measurement system may include an illumination source configured to generate one or more illumination beams and one or more objective lenses. One or more of the objective lenses may be configured as illumination objective lenses to direct illumination from the illumination source to one or more targets on a sample. One or more of the objective lenses may be configured as collection objective lenses, where each of the collection objective lenses is configured to collect a selected diffraction order of the illumination from the sample. The system may further include one or more detectors, each configured to image the sample based on at least one of the selected diffraction orders from at least one of the collection objective lenses and a controller to generate measurements of the one or more targets on the sample based on one or more images from the detectors.

    Systems and methods for correction of impact of wafer tilt on misregistration measurements

    公开(公告)号:US12170215B2

    公开(公告)日:2024-12-17

    申请号:US16762107

    申请日:2020-04-05

    Abstract: A method for correcting misregistration measurements of a semiconductor wafer for errors therein arising from tilt of the wafer including measuring, for at least one location on a wafer, a difference between a Tool Induced Shift (TIS) of a metrology device in a first illumination arrangement with respect to the wafer wherein a surface of the wafer is generally orthogonally illuminated by an illumination source of the metrology device and a TIS of the metrology device in a second illumination arrangement with respect to the wafer, wherein the surface is obliquely illuminated by the illumination source, and correcting a misregistration measurement measured by the metrology device at the at least one location for errors therein arising from tilt of the wafer at the location by subtracting from the misregistration measurement a weighted value of the difference between the TIS in the first and second illumination arrangements.

    Systems and methods for improved metrology for semiconductor device wafers

    公开(公告)号:US12131959B2

    公开(公告)日:2024-10-29

    申请号:US17469280

    申请日:2021-09-08

    CPC classification number: H01L22/12 G05B19/41875 G05B2219/45031

    Abstract: A system and method for generating a quality parameter value of a semiconductor device wafer (SDW), during fabrication thereof, the method including designating a plurality of measurement site sets (MSSs) on the SDW, each of the MSSs including a first measurement-orientation site (FMS) and a second measurement-orientation site (SMS), the FMS and the SMS being different measurement sites on the SDW, generating a first measurement-orientation quality parameter dataset (FMQPD) by measuring features formed within each the FMS of at least one of the MSSs in a first measurement orientation, generating a second measurement-orientation quality parameter dataset (SMQPD) by measuring features formed within each the SMS of the at least one of the MSSs in a second measurement orientation and generating at least one tool-induced-shift (TIS)-ameliorated quality parameter value (TAQPV), at least partially based on the FMQPD and the SMQPD.

    Method of measuring misregistration in the manufacture of topographic semiconductor device wafers

    公开(公告)号:US11880141B2

    公开(公告)日:2024-01-23

    申请号:US17673131

    申请日:2022-02-16

    Abstract: A method of measuring misregistration in the manufacture of semiconductor device wafers including providing a multilayered semiconductor device wafer including at least a first layer and a second layer including at least one misregistration measurement target including a first periodic structure formed together with the first layer having a first pitch and a second periodic structure formed together with the second layer having a second pitch, imaging the first layer and the second layer at a depth of focus and using light having at least one first wavelength that causes images of both the first layer and the second layer to appear in at least one plane within the depth of focus and quantifying offset in the at least one plane between the images of the first layer and the second layer, thereby to calculate misregistration of the first layer and the second layer.

    Multi-directional overlay metrology using multiple illumination parameters and isolated imaging

    公开(公告)号:US11800212B1

    公开(公告)日:2023-10-24

    申请号:US17716757

    申请日:2022-04-08

    Abstract: An optical metrology system may include an overlay metrology tool for characterizing an overlay target on a sample, where the overlay target includes first-direction periodic features in a first set of layers of the sample, and second-direction periodic features in a second set of layers of the sample. The overlay metrology tool may simultaneously illuminate the overlay target with first illumination beams and second illumination beams and may further generate images of the overlay target based on diffraction of the first illumination beams and the second illumination beams by the overlay target, where diffraction orders of the first illumination beams contribute to resolved image formation of only the first-direction periodic features, and where diffraction orders of the second illumination beams contribute to resolved image formation of only the second-direction periodic features. The system may further generate overlay measurements along the first and second measurement directions based on the images.

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